ATE373861T1 - Nichtflüchtige speicherarrayarchitektur mit kontaktloser separater p-mulde mit gleichförmiger tunnelung (cusp), herstellung und betrieb - Google Patents

Nichtflüchtige speicherarrayarchitektur mit kontaktloser separater p-mulde mit gleichförmiger tunnelung (cusp), herstellung und betrieb

Info

Publication number
ATE373861T1
ATE373861T1 AT03791971T AT03791971T ATE373861T1 AT E373861 T1 ATE373861 T1 AT E373861T1 AT 03791971 T AT03791971 T AT 03791971T AT 03791971 T AT03791971 T AT 03791971T AT E373861 T1 ATE373861 T1 AT E373861T1
Authority
AT
Austria
Prior art keywords
volatile memory
cusp
contactless
separate
manufacturing
Prior art date
Application number
AT03791971T
Other languages
English (en)
Inventor
Chun Chen
Andrei Mihnea
Kirk Prall
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of ATE373861T1 publication Critical patent/ATE373861T1/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B41/00Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/10Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B41/00Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B69/00Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/04Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Devices For Executing Special Programs (AREA)
AT03791971T 2002-08-29 2003-08-29 Nichtflüchtige speicherarrayarchitektur mit kontaktloser separater p-mulde mit gleichförmiger tunnelung (cusp), herstellung und betrieb ATE373861T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/230,597 US6649453B1 (en) 2002-08-29 2002-08-29 Contactless uniform-tunneling separate p-well (CUSP) non-volatile memory array architecture, fabrication and operation

Publications (1)

Publication Number Publication Date
ATE373861T1 true ATE373861T1 (de) 2007-10-15

Family

ID=29420086

Family Applications (1)

Application Number Title Priority Date Filing Date
AT03791971T ATE373861T1 (de) 2002-08-29 2003-08-29 Nichtflüchtige speicherarrayarchitektur mit kontaktloser separater p-mulde mit gleichförmiger tunnelung (cusp), herstellung und betrieb

Country Status (9)

Country Link
US (5) US6649453B1 (de)
EP (1) EP1535286B1 (de)
JP (1) JP2005537649A (de)
KR (1) KR100713741B1 (de)
CN (1) CN1685442A (de)
AT (1) ATE373861T1 (de)
AU (1) AU2003265846A1 (de)
DE (1) DE60316449T2 (de)
WO (1) WO2004021362A1 (de)

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CN104362095B (zh) * 2014-11-05 2017-12-01 北京大学 一种隧穿场效应晶体管的制备方法

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Also Published As

Publication number Publication date
WO2004021362A1 (en) 2004-03-11
CN1685442A (zh) 2005-10-19
AU2003265846A1 (en) 2004-03-19
US6649453B1 (en) 2003-11-18
US20040072391A1 (en) 2004-04-15
US7199422B2 (en) 2007-04-03
EP1535286A1 (de) 2005-06-01
DE60316449T2 (de) 2008-06-26
EP1535286B1 (de) 2007-09-19
US6930350B2 (en) 2005-08-16
US6984547B2 (en) 2006-01-10
US20050099846A1 (en) 2005-05-12
US20040071008A1 (en) 2004-04-15
US7696557B2 (en) 2010-04-13
US20070164348A1 (en) 2007-07-19
DE60316449D1 (de) 2007-10-31
KR20050057073A (ko) 2005-06-16
JP2005537649A (ja) 2005-12-08
KR100713741B1 (ko) 2007-05-02

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