DE60300477T2 - Nichtflüchtige Speichervorrichtung mit vertikalen Nanoröhren - Google Patents

Nichtflüchtige Speichervorrichtung mit vertikalen Nanoröhren Download PDF

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Publication number
DE60300477T2
DE60300477T2 DE60300477T DE60300477T DE60300477T2 DE 60300477 T2 DE60300477 T2 DE 60300477T2 DE 60300477 T DE60300477 T DE 60300477T DE 60300477 T DE60300477 T DE 60300477T DE 60300477 T2 DE60300477 T2 DE 60300477T2
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DE
Germany
Prior art keywords
layer
memory device
nanotube
silicon
electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60300477T
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German (de)
English (en)
Other versions
DE60300477D1 (de
Inventor
Won-bong Suwon-city Choi
Jo-won Suwon-city Lee
Ho-kyu Yongin-city Kang
Chung-woo Seongnam-city Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE60300477D1 publication Critical patent/DE60300477D1/de
Publication of DE60300477T2 publication Critical patent/DE60300477T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/691—IGFETs having charge trapping gate insulators, e.g. MNOS transistors having more than two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/693—Vertical IGFETs having charge trapping gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/16—Memory cell being a nanotube, e.g. suspended nanotube
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/17—Memory cell being a nanowire transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE60300477T 2002-11-15 2003-11-11 Nichtflüchtige Speichervorrichtung mit vertikalen Nanoröhren Expired - Lifetime DE60300477T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR2002071041 2002-11-15
KR1020020071041A KR100790859B1 (ko) 2002-11-15 2002-11-15 수직 나노튜브를 이용한 비휘발성 메모리 소자

Publications (2)

Publication Number Publication Date
DE60300477D1 DE60300477D1 (de) 2005-05-12
DE60300477T2 true DE60300477T2 (de) 2006-02-23

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE60300477T Expired - Lifetime DE60300477T2 (de) 2002-11-15 2003-11-11 Nichtflüchtige Speichervorrichtung mit vertikalen Nanoröhren

Country Status (6)

Country Link
US (1) US6930343B2 (enExample)
EP (1) EP1420414B1 (enExample)
JP (2) JP4047797B2 (enExample)
KR (1) KR100790859B1 (enExample)
CN (1) CN1317768C (enExample)
DE (1) DE60300477T2 (enExample)

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US7829883B2 (en) 2004-02-12 2010-11-09 International Business Machines Corporation Vertical carbon nanotube field effect transistors and arrays
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US8362525B2 (en) * 2005-01-14 2013-01-29 Nantero Inc. Field effect device having a channel of nanofabric and methods of making same
US7598544B2 (en) * 2005-01-14 2009-10-06 Nanotero, Inc. Hybrid carbon nanotude FET(CNFET)-FET static RAM (SRAM) and method of making same
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KR100688542B1 (ko) * 2005-03-28 2007-03-02 삼성전자주식회사 수직형 나노튜브 반도체소자 및 그 제조방법
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KR100723412B1 (ko) * 2005-11-10 2007-05-30 삼성전자주식회사 나노튜브를 이용하는 비휘발성 메모리 소자
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Also Published As

Publication number Publication date
JP5307993B2 (ja) 2013-10-02
KR100790859B1 (ko) 2008-01-03
EP1420414A1 (en) 2004-05-19
JP4047797B2 (ja) 2008-02-13
CN1317768C (zh) 2007-05-23
CN1501503A (zh) 2004-06-02
JP2007329500A (ja) 2007-12-20
US20040095837A1 (en) 2004-05-20
EP1420414B1 (en) 2005-04-06
JP2004172616A (ja) 2004-06-17
DE60300477D1 (de) 2005-05-12
US6930343B2 (en) 2005-08-16
KR20040043043A (ko) 2004-05-22

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