US7494927B2
(en)
|
2000-05-15 |
2009-02-24 |
Asm International N.V. |
Method of growing electrical conductors
|
US6576538B2
(en)
*
|
2001-08-30 |
2003-06-10 |
Micron Technology, Inc. |
Technique for high efficiency metalorganic chemical vapor deposition
|
KR100727372B1
(ko)
*
|
2001-09-12 |
2007-06-12 |
토소가부시키가이샤 |
루테늄착체, 그 제조방법 및 박막의 제조방법
|
KR100476556B1
(ko)
*
|
2002-04-11 |
2005-03-18 |
삼성전기주식회사 |
압전트랜스 장치, 압전트랜스 하우징 및 그 제조방법
|
US7404985B2
(en)
|
2002-06-04 |
2008-07-29 |
Applied Materials, Inc. |
Noble metal layer formation for copper film deposition
|
US7264846B2
(en)
*
|
2002-06-04 |
2007-09-04 |
Applied Materials, Inc. |
Ruthenium layer formation for copper film deposition
|
US7910165B2
(en)
*
|
2002-06-04 |
2011-03-22 |
Applied Materials, Inc. |
Ruthenium layer formation for copper film deposition
|
DE10240255A1
(de)
*
|
2002-08-31 |
2004-03-11 |
Degussa Ag |
Verfahren zur Herstellung von cis-Alkenen und neue Katalysatoren hierfür
|
US6936086B2
(en)
*
|
2002-09-11 |
2005-08-30 |
Planar Systems, Inc. |
High conductivity particle filter
|
US7927658B2
(en)
*
|
2002-10-31 |
2011-04-19 |
Praxair Technology, Inc. |
Deposition processes using group 8 (VIII) metallocene precursors
|
WO2005103318A1
(en)
*
|
2004-02-04 |
2005-11-03 |
Praxair Technology, Inc. |
High nucleation density organometallic compounds
|
JP3624196B1
(ja)
*
|
2004-02-20 |
2005-03-02 |
株式会社フルヤ金属 |
粒子分散複合物及びそれを用いた固体電解質型センサー
|
CN1938444B
(zh)
*
|
2004-04-06 |
2010-06-16 |
Lg电子株式会社 |
涂覆超亲水性和抗菌性薄膜的金属产品及其生产方法
|
US7041596B1
(en)
|
2004-04-08 |
2006-05-09 |
Novellus Systems, Inc. |
Surface treatment using iodine plasma to improve metal deposition
|
US7619093B2
(en)
*
|
2004-10-15 |
2009-11-17 |
Praxair Technology, Inc. |
Organometallic compounds and mixtures thereof
|
US7270848B2
(en)
*
|
2004-11-23 |
2007-09-18 |
Tokyo Electron Limited |
Method for increasing deposition rates of metal layers from metal-carbonyl precursors
|
US7279421B2
(en)
*
|
2004-11-23 |
2007-10-09 |
Tokyo Electron Limited |
Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors
|
US7442267B1
(en)
|
2004-11-29 |
2008-10-28 |
Novellus Systems, Inc. |
Anneal of ruthenium seed layer to improve copper plating
|
US7429402B2
(en)
|
2004-12-10 |
2008-09-30 |
Applied Materials, Inc. |
Ruthenium as an underlayer for tungsten film deposition
|
DE102004061094A1
(de)
*
|
2004-12-18 |
2006-06-22 |
Aixtron Ag |
Verfahren zum selbstlimitierenden Abscheiden ein oder mehrerer Monolagen sowie dazu geeignete Ausgangsstoffe
|
US7265048B2
(en)
*
|
2005-03-01 |
2007-09-04 |
Applied Materials, Inc. |
Reduction of copper dewetting by transition metal deposition
|
US8025922B2
(en)
|
2005-03-15 |
2011-09-27 |
Asm International N.V. |
Enhanced deposition of noble metals
|
US7666773B2
(en)
|
2005-03-15 |
2010-02-23 |
Asm International N.V. |
Selective deposition of noble metal thin films
|
US7273814B2
(en)
*
|
2005-03-16 |
2007-09-25 |
Tokyo Electron Limited |
Method for forming a ruthenium metal layer on a patterned substrate
|
US8197898B2
(en)
*
|
2005-03-29 |
2012-06-12 |
Tokyo Electron Limited |
Method and system for depositing a layer from light-induced vaporization of a solid precursor
|
US7351285B2
(en)
*
|
2005-03-29 |
2008-04-01 |
Tokyo Electron Limited |
Method and system for forming a variable thickness seed layer
|
US7288479B2
(en)
*
|
2005-03-31 |
2007-10-30 |
Tokyo Electron Limited |
Method for forming a barrier/seed layer for copper metallization
|
US7485338B2
(en)
*
|
2005-03-31 |
2009-02-03 |
Tokyo Electron Limited |
Method for precursor delivery
|
US7345184B2
(en)
*
|
2005-03-31 |
2008-03-18 |
Tokyo Electron Limited |
Method and system for refurbishing a metal carbonyl precursor
|
US7396766B2
(en)
*
|
2005-03-31 |
2008-07-08 |
Tokyo Electron Limited |
Low-temperature chemical vapor deposition of low-resistivity ruthenium layers
|
JP2006290889A
(ja)
*
|
2005-04-12 |
2006-10-26 |
Rohm & Haas Electronic Materials Llc |
金属含有化合物精製
|
KR100624514B1
(ko)
*
|
2005-06-08 |
2006-09-26 |
(주)디엔에프 |
루테늄 박막 증착용 전구체 및 이를 이용한 박막 증착 방법
|
KR100628000B1
(ko)
|
2005-06-11 |
2006-09-26 |
주식회사 아이피에스 |
Ru 박막증착방법
|
US20070014919A1
(en)
*
|
2005-07-15 |
2007-01-18 |
Jani Hamalainen |
Atomic layer deposition of noble metal oxides
|
EP1940738A2
(de)
*
|
2005-09-23 |
2008-07-09 |
MECS, Inc. |
Rutheniumoxidkatalysatoren zur umwandlung von schwefeldioxid in schwefeltrioxid
|
US7459395B2
(en)
*
|
2005-09-28 |
2008-12-02 |
Tokyo Electron Limited |
Method for purifying a metal carbonyl precursor
|
US7482269B2
(en)
*
|
2005-09-28 |
2009-01-27 |
Tokyo Electron Limited |
Method for controlling the step coverage of a ruthenium layer on a patterned substrate
|
US7547796B2
(en)
*
|
2005-09-29 |
2009-06-16 |
Praxair Technology, Inc. |
Organometallic compounds, processes for the preparation thereof and methods of use thereof
|
US20070119371A1
(en)
|
2005-11-04 |
2007-05-31 |
Paul Ma |
Apparatus and process for plasma-enhanced atomic layer deposition
|
WO2007061980A1
(en)
*
|
2005-11-23 |
2007-05-31 |
Pilkington North America, Inc. |
Deposition of ruthenium oxide coatings on a substrate
|
WO2007064376A2
(en)
*
|
2005-11-28 |
2007-06-07 |
Honeywell International Inc. |
Organometallic precursors and related intermediates for deposition processes, their production and methods of use
|
WO2007102333A1
(ja)
*
|
2006-02-28 |
2007-09-13 |
Tokyo Electron Limited |
ルテニウム膜の成膜方法およびコンピュータ読取可能な記憶媒体
|
US7858522B2
(en)
*
|
2006-03-29 |
2010-12-28 |
Tokyo Electron Limited |
Method for reducing carbon monoxide poisoning in a thin film deposition system
|
US7297719B2
(en)
*
|
2006-03-29 |
2007-11-20 |
Tokyo Electron Limited |
Method and integrated system for purifying and delivering a metal carbonyl precursor
|
US7892358B2
(en)
*
|
2006-03-29 |
2011-02-22 |
Tokyo Electron Limited |
System for introducing a precursor gas to a vapor deposition system
|
US20070231489A1
(en)
*
|
2006-03-29 |
2007-10-04 |
Tokyo Electron Limited |
Method for introducing a precursor gas to a vapor deposition system
|
US7833358B2
(en)
*
|
2006-04-07 |
2010-11-16 |
Applied Materials, Inc. |
Method of recovering valuable material from exhaust gas stream of a reaction chamber
|
US7557047B2
(en)
*
|
2006-06-09 |
2009-07-07 |
Micron Technology, Inc. |
Method of forming a layer of material using an atomic layer deposition process
|
DE102006027932A1
(de)
*
|
2006-06-14 |
2007-12-20 |
Aixtron Ag |
Verfahren zum selbstlimitierenden Abscheiden ein oder mehrerer Monolagen
|
US8304567B2
(en)
*
|
2006-07-27 |
2012-11-06 |
Ube Industries, Ltd |
Organoruthenium complex, and method for production of ruthenium thin film using the ruthenium complex
|
US7667065B2
(en)
*
|
2006-08-02 |
2010-02-23 |
Praxair Technology, Inc. |
High nucleation density organometallic compounds
|
EP1887102B1
(de)
*
|
2006-08-08 |
2020-04-08 |
L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Prekursors zur bildung von rhutenium -haltigen schichten
|
US7959986B2
(en)
*
|
2006-08-09 |
2011-06-14 |
Praxair Technology, Inc. |
Organometallic compounds, processes for the preparation thereof and methods of use thereof
|
US7605078B2
(en)
*
|
2006-09-29 |
2009-10-20 |
Tokyo Electron Limited |
Integration of a variable thickness copper seed layer in copper metallization
|
JP5032085B2
(ja)
*
|
2006-10-06 |
2012-09-26 |
田中貴金属工業株式会社 |
化学蒸着用の有機ルテニウム化合物及び該有機ルテニウム化合物を用いた化学蒸着方法
|
JP5313171B2
(ja)
*
|
2007-02-21 |
2013-10-09 |
レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード |
ルテニウムベースの膜を基板上に形成するための方法
|
JP5293930B2
(ja)
*
|
2007-03-22 |
2013-09-18 |
Jsr株式会社 |
化学気相成長材料及び化学気相成長方法
|
US20080237860A1
(en)
*
|
2007-03-27 |
2008-10-02 |
Tokyo Electron Limited |
Interconnect structures containing a ruthenium barrier film and method of forming
|
US20080242088A1
(en)
*
|
2007-03-29 |
2008-10-02 |
Tokyo Electron Limited |
Method of forming low resistivity copper film structures
|
US20080248648A1
(en)
*
|
2007-04-06 |
2008-10-09 |
Thompson David M |
Deposition precursors for semiconductor applications
|
US7829454B2
(en)
*
|
2007-09-11 |
2010-11-09 |
Tokyo Electron Limited |
Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device
|
US7704879B2
(en)
*
|
2007-09-27 |
2010-04-27 |
Tokyo Electron Limited |
Method of forming low-resistivity recessed features in copper metallization
|
US20090087339A1
(en)
*
|
2007-09-28 |
2009-04-02 |
Asm Japan K.K. |
METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR
|
US7737028B2
(en)
*
|
2007-09-28 |
2010-06-15 |
Applied Materials, Inc. |
Selective ruthenium deposition on copper materials
|
US7884012B2
(en)
*
|
2007-09-28 |
2011-02-08 |
Tokyo Electron Limited |
Void-free copper filling of recessed features for semiconductor devices
|
US7776740B2
(en)
*
|
2008-01-22 |
2010-08-17 |
Tokyo Electron Limited |
Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
|
US20090203928A1
(en)
*
|
2008-01-24 |
2009-08-13 |
Thompson David M |
Organometallic compounds, processes for the preparation thereof and methods of use thereof
|
US20090205538A1
(en)
*
|
2008-01-24 |
2009-08-20 |
Thompson David M |
Organometallic compounds, processes for the preparation thereof and methods of use thereof
|
US20090205968A1
(en)
*
|
2008-01-24 |
2009-08-20 |
Thompson David M |
Organometallic compounds, processes for the preparation thereof and methods of use thereof
|
US20090202740A1
(en)
*
|
2008-01-24 |
2009-08-13 |
Thompson David M |
Organometallic compounds, processes for the preparation thereof and methods of use thereof
|
US8247030B2
(en)
*
|
2008-03-07 |
2012-08-21 |
Tokyo Electron Limited |
Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
|
US8636845B2
(en)
|
2008-06-25 |
2014-01-28 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Metal heterocyclic compounds for deposition of thin films
|
US7799681B2
(en)
*
|
2008-07-15 |
2010-09-21 |
Tokyo Electron Limited |
Method for forming a ruthenium metal cap layer
|
US7776743B2
(en)
*
|
2008-07-30 |
2010-08-17 |
Tel Epion Inc. |
Method of forming semiconductor devices containing metal cap layers
|
US7871929B2
(en)
*
|
2008-07-30 |
2011-01-18 |
Tel Epion Inc. |
Method of forming semiconductor devices containing metal cap layers
|
US8084104B2
(en)
*
|
2008-08-29 |
2011-12-27 |
Asm Japan K.K. |
Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
|
US20100081274A1
(en)
*
|
2008-09-29 |
2010-04-01 |
Tokyo Electron Limited |
Method for forming ruthenium metal cap layers
|
US9379011B2
(en)
|
2008-12-19 |
2016-06-28 |
Asm International N.V. |
Methods for depositing nickel films and for making nickel silicide and nickel germanide
|
JP5549848B2
(ja)
|
2008-12-25 |
2014-07-16 |
東ソー株式会社 |
ルテニウム化合物、その製法及びそれを用いた成膜法
|
US7977235B2
(en)
*
|
2009-02-02 |
2011-07-12 |
Tokyo Electron Limited |
Method for manufacturing a semiconductor device with metal-containing cap layers
|
US8716132B2
(en)
*
|
2009-02-13 |
2014-05-06 |
Tokyo Electron Limited |
Radiation-assisted selective deposition of metal-containing cap layers
|
US20110020546A1
(en)
*
|
2009-05-15 |
2011-01-27 |
Asm International N.V. |
Low Temperature ALD of Noble Metals
|
EP2339048B1
(de)
*
|
2009-09-14 |
2016-12-07 |
Rohm and Haas Electronic Materials, L.L.C. |
Verfahren zum Abscheiden von organometallischen Verbindungen
|
JP5754377B2
(ja)
*
|
2009-10-29 |
2015-07-29 |
Jsr株式会社 |
ルテニウム膜形成方法
|
JP5732772B2
(ja)
*
|
2009-12-28 |
2015-06-10 |
東ソー株式会社 |
ルテニウム錯体混合物、その製造方法、成膜用組成物、ルテニウム含有膜及びその製造方法
|
US8859047B2
(en)
|
2010-02-23 |
2014-10-14 |
L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude |
Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
|
JP5628613B2
(ja)
|
2010-09-21 |
2014-11-19 |
高砂香料工業株式会社 |
アミド化合物からアルコール及び/又はアミンを製造する方法
|
US8871617B2
(en)
|
2011-04-22 |
2014-10-28 |
Asm Ip Holding B.V. |
Deposition and reduction of mixed metal oxide thin films
|
WO2013046157A1
(en)
|
2011-09-27 |
2013-04-04 |
L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude |
Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing film depositions
|
JP6114525B2
(ja)
*
|
2011-11-04 |
2017-04-12 |
東京エレクトロン株式会社 |
酸化ルテニウム膜の成膜方法
|
US9416443B2
(en)
|
2012-02-07 |
2016-08-16 |
L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude |
Method for the deposition of a ruthenium containing film using arene diazadiene ruthenium(0) precursors
|
TWI610932B
(zh)
|
2012-12-07 |
2018-01-11 |
東曹股份有限公司 |
釕錯合物及其製造方法、陽離子性三腈錯合物及其製造方法、以及含釕薄膜的製造方法
|
JP6118149B2
(ja)
*
|
2013-03-21 |
2017-04-19 |
東京エレクトロン株式会社 |
ルテニウム膜の形成方法および記憶媒体
|
DE102014200947A1
(de)
*
|
2014-01-20 |
2015-08-06 |
Wobben Properties Gmbh |
Synchrongenerator einer getriebelosen Windenergieanlage
|
KR101703871B1
(ko)
|
2014-05-30 |
2017-02-08 |
주식회사 유피케미칼 |
신규 루테늄 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법
|
US9607842B1
(en)
|
2015-10-02 |
2017-03-28 |
Asm Ip Holding B.V. |
Methods of forming metal silicides
|
DE102016108712A1
(de)
|
2016-05-11 |
2017-11-16 |
Wobben Properties Gmbh |
Synchrongenerator einer getriebelosen Windenergieanlage sowie Verfahren zum Herstellen eines Synchrongenerators und Verwendung von Formspulen
|
CN118271372A
(zh)
*
|
2022-12-30 |
2024-07-02 |
华为技术有限公司 |
前驱体材料、前体组合物以及沉积形成膜层的方法
|