DE60235738D1 - Rutheniumkomplex, Verfahren zu dessen Herstellung und Verfahren zur Herstellung einer Dünnschicht - Google Patents

Rutheniumkomplex, Verfahren zu dessen Herstellung und Verfahren zur Herstellung einer Dünnschicht

Info

Publication number
DE60235738D1
DE60235738D1 DE60235738T DE60235738T DE60235738D1 DE 60235738 D1 DE60235738 D1 DE 60235738D1 DE 60235738 T DE60235738 T DE 60235738T DE 60235738 T DE60235738 T DE 60235738T DE 60235738 D1 DE60235738 D1 DE 60235738D1
Authority
DE
Germany
Prior art keywords
producing
preparation
thin film
ruthenium complex
ruthenium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60235738T
Other languages
English (en)
Inventor
Kazuhisa Kawano
Kenichi Sekimoto
Noriaki Oshima
Tetsuo Shibutami
Shuji Kumagai
Taishi Furukawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Corp
Original Assignee
Tosoh Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Corp filed Critical Tosoh Corp
Application granted granted Critical
Publication of DE60235738D1 publication Critical patent/DE60235738D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07FACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00Metallocenes
    • C07F17/02Metallocenes of metals of Groups 8, 9 or 10 of the Periodic Table
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
DE60235738T 2001-09-12 2002-09-10 Rutheniumkomplex, Verfahren zu dessen Herstellung und Verfahren zur Herstellung einer Dünnschicht Expired - Lifetime DE60235738D1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2001276481 2001-09-12
JP2001276479 2001-09-12
JP2001276478 2001-09-12
JP2001276480 2001-09-12
JP2001359769 2001-11-26
JP2002078970 2002-03-20

Publications (1)

Publication Number Publication Date
DE60235738D1 true DE60235738D1 (de) 2010-05-06

Family

ID=27554998

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60235738T Expired - Lifetime DE60235738D1 (de) 2001-09-12 2002-09-10 Rutheniumkomplex, Verfahren zu dessen Herstellung und Verfahren zur Herstellung einer Dünnschicht

Country Status (6)

Country Link
US (1) US6605735B2 (de)
EP (1) EP1293509B1 (de)
JP (2) JP5104499B2 (de)
KR (1) KR100727372B1 (de)
CN (1) CN1255417C (de)
DE (1) DE60235738D1 (de)

Families Citing this family (98)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7494927B2 (en) 2000-05-15 2009-02-24 Asm International N.V. Method of growing electrical conductors
US6576538B2 (en) * 2001-08-30 2003-06-10 Micron Technology, Inc. Technique for high efficiency metalorganic chemical vapor deposition
KR100727372B1 (ko) * 2001-09-12 2007-06-12 토소가부시키가이샤 루테늄착체, 그 제조방법 및 박막의 제조방법
KR100476556B1 (ko) * 2002-04-11 2005-03-18 삼성전기주식회사 압전트랜스 장치, 압전트랜스 하우징 및 그 제조방법
US7404985B2 (en) 2002-06-04 2008-07-29 Applied Materials, Inc. Noble metal layer formation for copper film deposition
US7264846B2 (en) * 2002-06-04 2007-09-04 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
US7910165B2 (en) * 2002-06-04 2011-03-22 Applied Materials, Inc. Ruthenium layer formation for copper film deposition
DE10240255A1 (de) * 2002-08-31 2004-03-11 Degussa Ag Verfahren zur Herstellung von cis-Alkenen und neue Katalysatoren hierfür
US6936086B2 (en) * 2002-09-11 2005-08-30 Planar Systems, Inc. High conductivity particle filter
US7927658B2 (en) * 2002-10-31 2011-04-19 Praxair Technology, Inc. Deposition processes using group 8 (VIII) metallocene precursors
WO2005103318A1 (en) * 2004-02-04 2005-11-03 Praxair Technology, Inc. High nucleation density organometallic compounds
JP3624196B1 (ja) * 2004-02-20 2005-03-02 株式会社フルヤ金属 粒子分散複合物及びそれを用いた固体電解質型センサー
CN1938444B (zh) * 2004-04-06 2010-06-16 Lg电子株式会社 涂覆超亲水性和抗菌性薄膜的金属产品及其生产方法
US7041596B1 (en) 2004-04-08 2006-05-09 Novellus Systems, Inc. Surface treatment using iodine plasma to improve metal deposition
US7619093B2 (en) * 2004-10-15 2009-11-17 Praxair Technology, Inc. Organometallic compounds and mixtures thereof
US7270848B2 (en) * 2004-11-23 2007-09-18 Tokyo Electron Limited Method for increasing deposition rates of metal layers from metal-carbonyl precursors
US7279421B2 (en) * 2004-11-23 2007-10-09 Tokyo Electron Limited Method and deposition system for increasing deposition rates of metal layers from metal-carbonyl precursors
US7442267B1 (en) 2004-11-29 2008-10-28 Novellus Systems, Inc. Anneal of ruthenium seed layer to improve copper plating
US7429402B2 (en) 2004-12-10 2008-09-30 Applied Materials, Inc. Ruthenium as an underlayer for tungsten film deposition
DE102004061094A1 (de) * 2004-12-18 2006-06-22 Aixtron Ag Verfahren zum selbstlimitierenden Abscheiden ein oder mehrerer Monolagen sowie dazu geeignete Ausgangsstoffe
US7265048B2 (en) * 2005-03-01 2007-09-04 Applied Materials, Inc. Reduction of copper dewetting by transition metal deposition
US8025922B2 (en) 2005-03-15 2011-09-27 Asm International N.V. Enhanced deposition of noble metals
US7666773B2 (en) 2005-03-15 2010-02-23 Asm International N.V. Selective deposition of noble metal thin films
US7273814B2 (en) * 2005-03-16 2007-09-25 Tokyo Electron Limited Method for forming a ruthenium metal layer on a patterned substrate
US8197898B2 (en) * 2005-03-29 2012-06-12 Tokyo Electron Limited Method and system for depositing a layer from light-induced vaporization of a solid precursor
US7351285B2 (en) * 2005-03-29 2008-04-01 Tokyo Electron Limited Method and system for forming a variable thickness seed layer
US7288479B2 (en) * 2005-03-31 2007-10-30 Tokyo Electron Limited Method for forming a barrier/seed layer for copper metallization
US7485338B2 (en) * 2005-03-31 2009-02-03 Tokyo Electron Limited Method for precursor delivery
US7345184B2 (en) * 2005-03-31 2008-03-18 Tokyo Electron Limited Method and system for refurbishing a metal carbonyl precursor
US7396766B2 (en) * 2005-03-31 2008-07-08 Tokyo Electron Limited Low-temperature chemical vapor deposition of low-resistivity ruthenium layers
JP2006290889A (ja) * 2005-04-12 2006-10-26 Rohm & Haas Electronic Materials Llc 金属含有化合物精製
KR100624514B1 (ko) * 2005-06-08 2006-09-26 (주)디엔에프 루테늄 박막 증착용 전구체 및 이를 이용한 박막 증착 방법
KR100628000B1 (ko) 2005-06-11 2006-09-26 주식회사 아이피에스 Ru 박막증착방법
US20070014919A1 (en) * 2005-07-15 2007-01-18 Jani Hamalainen Atomic layer deposition of noble metal oxides
EP1940738A2 (de) * 2005-09-23 2008-07-09 MECS, Inc. Rutheniumoxidkatalysatoren zur umwandlung von schwefeldioxid in schwefeltrioxid
US7459395B2 (en) * 2005-09-28 2008-12-02 Tokyo Electron Limited Method for purifying a metal carbonyl precursor
US7482269B2 (en) * 2005-09-28 2009-01-27 Tokyo Electron Limited Method for controlling the step coverage of a ruthenium layer on a patterned substrate
US7547796B2 (en) * 2005-09-29 2009-06-16 Praxair Technology, Inc. Organometallic compounds, processes for the preparation thereof and methods of use thereof
US20070119371A1 (en) 2005-11-04 2007-05-31 Paul Ma Apparatus and process for plasma-enhanced atomic layer deposition
WO2007061980A1 (en) * 2005-11-23 2007-05-31 Pilkington North America, Inc. Deposition of ruthenium oxide coatings on a substrate
WO2007064376A2 (en) * 2005-11-28 2007-06-07 Honeywell International Inc. Organometallic precursors and related intermediates for deposition processes, their production and methods of use
WO2007102333A1 (ja) * 2006-02-28 2007-09-13 Tokyo Electron Limited ルテニウム膜の成膜方法およびコンピュータ読取可能な記憶媒体
US7858522B2 (en) * 2006-03-29 2010-12-28 Tokyo Electron Limited Method for reducing carbon monoxide poisoning in a thin film deposition system
US7297719B2 (en) * 2006-03-29 2007-11-20 Tokyo Electron Limited Method and integrated system for purifying and delivering a metal carbonyl precursor
US7892358B2 (en) * 2006-03-29 2011-02-22 Tokyo Electron Limited System for introducing a precursor gas to a vapor deposition system
US20070231489A1 (en) * 2006-03-29 2007-10-04 Tokyo Electron Limited Method for introducing a precursor gas to a vapor deposition system
US7833358B2 (en) * 2006-04-07 2010-11-16 Applied Materials, Inc. Method of recovering valuable material from exhaust gas stream of a reaction chamber
US7557047B2 (en) * 2006-06-09 2009-07-07 Micron Technology, Inc. Method of forming a layer of material using an atomic layer deposition process
DE102006027932A1 (de) * 2006-06-14 2007-12-20 Aixtron Ag Verfahren zum selbstlimitierenden Abscheiden ein oder mehrerer Monolagen
US8304567B2 (en) * 2006-07-27 2012-11-06 Ube Industries, Ltd Organoruthenium complex, and method for production of ruthenium thin film using the ruthenium complex
US7667065B2 (en) * 2006-08-02 2010-02-23 Praxair Technology, Inc. High nucleation density organometallic compounds
EP1887102B1 (de) * 2006-08-08 2020-04-08 L'AIR LIQUIDE, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Prekursors zur bildung von rhutenium -haltigen schichten
US7959986B2 (en) * 2006-08-09 2011-06-14 Praxair Technology, Inc. Organometallic compounds, processes for the preparation thereof and methods of use thereof
US7605078B2 (en) * 2006-09-29 2009-10-20 Tokyo Electron Limited Integration of a variable thickness copper seed layer in copper metallization
JP5032085B2 (ja) * 2006-10-06 2012-09-26 田中貴金属工業株式会社 化学蒸着用の有機ルテニウム化合物及び該有機ルテニウム化合物を用いた化学蒸着方法
JP5313171B2 (ja) * 2007-02-21 2013-10-09 レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード ルテニウムベースの膜を基板上に形成するための方法
JP5293930B2 (ja) * 2007-03-22 2013-09-18 Jsr株式会社 化学気相成長材料及び化学気相成長方法
US20080237860A1 (en) * 2007-03-27 2008-10-02 Tokyo Electron Limited Interconnect structures containing a ruthenium barrier film and method of forming
US20080242088A1 (en) * 2007-03-29 2008-10-02 Tokyo Electron Limited Method of forming low resistivity copper film structures
US20080248648A1 (en) * 2007-04-06 2008-10-09 Thompson David M Deposition precursors for semiconductor applications
US7829454B2 (en) * 2007-09-11 2010-11-09 Tokyo Electron Limited Method for integrating selective ruthenium deposition into manufacturing of a semiconductior device
US7704879B2 (en) * 2007-09-27 2010-04-27 Tokyo Electron Limited Method of forming low-resistivity recessed features in copper metallization
US20090087339A1 (en) * 2007-09-28 2009-04-02 Asm Japan K.K. METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR
US7737028B2 (en) * 2007-09-28 2010-06-15 Applied Materials, Inc. Selective ruthenium deposition on copper materials
US7884012B2 (en) * 2007-09-28 2011-02-08 Tokyo Electron Limited Void-free copper filling of recessed features for semiconductor devices
US7776740B2 (en) * 2008-01-22 2010-08-17 Tokyo Electron Limited Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device
US20090203928A1 (en) * 2008-01-24 2009-08-13 Thompson David M Organometallic compounds, processes for the preparation thereof and methods of use thereof
US20090205538A1 (en) * 2008-01-24 2009-08-20 Thompson David M Organometallic compounds, processes for the preparation thereof and methods of use thereof
US20090205968A1 (en) * 2008-01-24 2009-08-20 Thompson David M Organometallic compounds, processes for the preparation thereof and methods of use thereof
US20090202740A1 (en) * 2008-01-24 2009-08-13 Thompson David M Organometallic compounds, processes for the preparation thereof and methods of use thereof
US8247030B2 (en) * 2008-03-07 2012-08-21 Tokyo Electron Limited Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer
US8636845B2 (en) 2008-06-25 2014-01-28 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Metal heterocyclic compounds for deposition of thin films
US7799681B2 (en) * 2008-07-15 2010-09-21 Tokyo Electron Limited Method for forming a ruthenium metal cap layer
US7776743B2 (en) * 2008-07-30 2010-08-17 Tel Epion Inc. Method of forming semiconductor devices containing metal cap layers
US7871929B2 (en) * 2008-07-30 2011-01-18 Tel Epion Inc. Method of forming semiconductor devices containing metal cap layers
US8084104B2 (en) * 2008-08-29 2011-12-27 Asm Japan K.K. Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition
US20100081274A1 (en) * 2008-09-29 2010-04-01 Tokyo Electron Limited Method for forming ruthenium metal cap layers
US9379011B2 (en) 2008-12-19 2016-06-28 Asm International N.V. Methods for depositing nickel films and for making nickel silicide and nickel germanide
JP5549848B2 (ja) 2008-12-25 2014-07-16 東ソー株式会社 ルテニウム化合物、その製法及びそれを用いた成膜法
US7977235B2 (en) * 2009-02-02 2011-07-12 Tokyo Electron Limited Method for manufacturing a semiconductor device with metal-containing cap layers
US8716132B2 (en) * 2009-02-13 2014-05-06 Tokyo Electron Limited Radiation-assisted selective deposition of metal-containing cap layers
US20110020546A1 (en) * 2009-05-15 2011-01-27 Asm International N.V. Low Temperature ALD of Noble Metals
EP2339048B1 (de) * 2009-09-14 2016-12-07 Rohm and Haas Electronic Materials, L.L.C. Verfahren zum Abscheiden von organometallischen Verbindungen
JP5754377B2 (ja) * 2009-10-29 2015-07-29 Jsr株式会社 ルテニウム膜形成方法
JP5732772B2 (ja) * 2009-12-28 2015-06-10 東ソー株式会社 ルテニウム錯体混合物、その製造方法、成膜用組成物、ルテニウム含有膜及びその製造方法
US8859047B2 (en) 2010-02-23 2014-10-14 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Use of ruthenium tetroxide as a precursor and reactant for thin film depositions
JP5628613B2 (ja) 2010-09-21 2014-11-19 高砂香料工業株式会社 アミド化合物からアルコール及び/又はアミンを製造する方法
US8871617B2 (en) 2011-04-22 2014-10-28 Asm Ip Holding B.V. Deposition and reduction of mixed metal oxide thin films
WO2013046157A1 (en) 2011-09-27 2013-04-04 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Nickel bis diazabutadiene precursors, their synthesis, and their use for nickel containing film depositions
JP6114525B2 (ja) * 2011-11-04 2017-04-12 東京エレクトロン株式会社 酸化ルテニウム膜の成膜方法
US9416443B2 (en) 2012-02-07 2016-08-16 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Method for the deposition of a ruthenium containing film using arene diazadiene ruthenium(0) precursors
TWI610932B (zh) 2012-12-07 2018-01-11 東曹股份有限公司 釕錯合物及其製造方法、陽離子性三腈錯合物及其製造方法、以及含釕薄膜的製造方法
JP6118149B2 (ja) * 2013-03-21 2017-04-19 東京エレクトロン株式会社 ルテニウム膜の形成方法および記憶媒体
DE102014200947A1 (de) * 2014-01-20 2015-08-06 Wobben Properties Gmbh Synchrongenerator einer getriebelosen Windenergieanlage
KR101703871B1 (ko) 2014-05-30 2017-02-08 주식회사 유피케미칼 신규 루테늄 화합물, 이의 제조 방법, 이를 포함하는 막 증착용 전구체 조성물, 및 이를 이용하는 막의 증착 방법
US9607842B1 (en) 2015-10-02 2017-03-28 Asm Ip Holding B.V. Methods of forming metal silicides
DE102016108712A1 (de) 2016-05-11 2017-11-16 Wobben Properties Gmbh Synchrongenerator einer getriebelosen Windenergieanlage sowie Verfahren zum Herstellen eines Synchrongenerators und Verwendung von Formspulen
CN118271372A (zh) * 2022-12-30 2024-07-02 华为技术有限公司 前驱体材料、前体组合物以及沉积形成膜层的方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4927670A (en) 1988-06-22 1990-05-22 Georgia Tech Research Corporation Chemical vapor deposition of mixed metal oxide coatings
US4992305A (en) 1988-06-22 1991-02-12 Georgia Tech Research Corporation Chemical vapor deposition of transistion metals
US5130172A (en) 1988-10-21 1992-07-14 The Regents Of The University Of California Low temperature organometallic deposition of metals
JP3488252B2 (ja) 1991-10-02 2004-01-19 日本酸素株式会社 化学気相析出用有機金属錯体溶液
US5403620A (en) 1992-10-13 1995-04-04 Regents Of The University Of California Catalysis in organometallic CVD of thin metal films
JP3224450B2 (ja) 1993-03-26 2001-10-29 日本酸素株式会社 酸化ルテニウムの成膜方法
US5352488A (en) 1993-05-14 1994-10-04 Syracuse University Chemical vapor deposition process employing metal pentadienyl complexes
JP3371328B2 (ja) 1997-07-17 2003-01-27 株式会社高純度化学研究所 ビス(アルキルシクロペンタジエニル)ルテニウム錯 体の製造方法およびそれを用いたルテニウム含有薄膜 の製造方法
US6002036A (en) 1997-07-17 1999-12-14 Kabushikikaisha Kojundokagaku Kenkyusho Process for producing bis(alkyl-cyclopentadienyl)ruthenium complexes and process for producing ruthenium-containing films by using the same
US5962716A (en) 1998-08-27 1999-10-05 Micron Technology, Inc. Methods for preparing ruthenium and osmium compounds
US6063705A (en) 1998-08-27 2000-05-16 Micron Technology, Inc. Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide
JP4152028B2 (ja) 1999-01-25 2008-09-17 株式会社Adeka ルテニウム系薄膜の製造方法
JP2000281694A (ja) 1999-03-29 2000-10-10 Tanaka Kikinzoku Kogyo Kk 有機金属気相エピタキシー用の有機金属化合物
JP3620642B2 (ja) 1999-12-14 2005-02-16 田中貴金属工業株式会社 (アルキルシクロペンタジエニル)シクロペンタジエニルルテニウムの製造方法及びその方法により製造される(アルキルシクロペンタジエニル)シクロペンタジエニルルテニウム、並びにその(アルキルシクロペンタジエニル)シクロペンタジエニルルテニウムを原料とする薄膜の製造方法
US6380080B2 (en) 2000-03-08 2002-04-30 Micron Technology, Inc. Methods for preparing ruthenium metal films
KR100727372B1 (ko) * 2001-09-12 2007-06-12 토소가부시키가이샤 루테늄착체, 그 제조방법 및 박막의 제조방법

Also Published As

Publication number Publication date
JP2010163441A (ja) 2010-07-29
JP5136576B2 (ja) 2013-02-06
US20030088116A1 (en) 2003-05-08
JP2008266329A (ja) 2008-11-06
KR100727372B1 (ko) 2007-06-12
EP1293509A2 (de) 2003-03-19
JP5104499B2 (ja) 2012-12-19
EP1293509B1 (de) 2010-03-24
KR20030023484A (ko) 2003-03-19
CN1255417C (zh) 2006-05-10
US6605735B2 (en) 2003-08-12
CN1408717A (zh) 2003-04-09
EP1293509A3 (de) 2004-05-19

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