KR100624514B1 - 루테늄 박막 증착용 전구체 및 이를 이용한 박막 증착 방법 - Google Patents
루테늄 박막 증착용 전구체 및 이를 이용한 박막 증착 방법 Download PDFInfo
- Publication number
- KR100624514B1 KR100624514B1 KR1020050048753A KR20050048753A KR100624514B1 KR 100624514 B1 KR100624514 B1 KR 100624514B1 KR 1020050048753 A KR1020050048753 A KR 1020050048753A KR 20050048753 A KR20050048753 A KR 20050048753A KR 100624514 B1 KR100624514 B1 KR 100624514B1
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- KR
- South Korea
- Prior art keywords
- thin film
- formula
- ruthenium
- ruthenium thin
- chamber
- Prior art date
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (6)
- 제 1항에 있어서,R1 및 R2 은 독립적으로 메틸기 또는 에틸기에서 선택되며, R3, R4, R5, R6 및 R7 은 독립적으로 수소, 메틸기 또는 에틸기에서 선택되는 루테늄 박막 증착용 전구체 화합물.
- (a)챔버 내에 반응 기판을 도입하는 단계;(b)상기 챔버 내로 제 1항 내지 제 3항에서 선택되는 어느 한 항의 루테늄 박막 증착용 전구체 화합물을 주입하여 기판상에 흡착시키는 단계;(c)상기 챔버 내에 잔류하는 상기 루테늄 박막 증착용 전구체 화합물 및 부산물을 퍼지하는 단계;(d)상기 챔버에 활성화 수소를 공급하여 루테늄 박막을 형성하는 단계;(e)상기 챔버를 진공 퍼지하는 단계;를 포함하는 루테늄 박막의 제조 방법.
- 제 4항에 있어서,상기 (e)단계 후, (b)~(e) 단계를 1회 이상 반복하여 복층의 루테늄 막을 형성하는 것을 특징으로 하는 루테늄 박막의 제조 방법.
- 제 4항 또는 제 5항에 있어서,상기 활성화 수소는 수소 플라즈마 또는 암모니아 플라즈마에 의해서 공급되는 것을 특징으로 하는 루테늄 박막 증착 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050048753A KR100624514B1 (ko) | 2005-06-08 | 2005-06-08 | 루테늄 박막 증착용 전구체 및 이를 이용한 박막 증착 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020050048753A KR100624514B1 (ko) | 2005-06-08 | 2005-06-08 | 루테늄 박막 증착용 전구체 및 이를 이용한 박막 증착 방법 |
Publications (1)
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KR100624514B1 true KR100624514B1 (ko) | 2006-09-26 |
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KR1020050048753A KR100624514B1 (ko) | 2005-06-08 | 2005-06-08 | 루테늄 박막 증착용 전구체 및 이를 이용한 박막 증착 방법 |
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KR (1) | KR100624514B1 (ko) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001122887A (ja) * | 1999-10-25 | 2001-05-08 | Tanaka Kikinzoku Kogyo Kk | 化学気相蒸着用の有機金属化合物及びその有機金属化合物の製造方法並びにその有機金属化合物を用いた薄膜の製造方法 |
JP2002212112A (ja) * | 2001-01-22 | 2002-07-31 | Tanaka Kikinzoku Kogyo Kk | 化学気相蒸着用のルテニウム化合物並びにルテニウム薄膜及びルテニウム化合物薄膜の化学気相蒸着方法。 |
JP2002308894A (ja) * | 2001-04-13 | 2002-10-23 | Tanaka Kikinzoku Kogyo Kk | ビス(シクロペンタジエニル)ルテニウム誘導体の製造方法及びその方法により製造されるビス(シクロペンタジエニル)ルテニウム誘導体並びにルテニウム薄膜又はルテニウム化合物薄膜の化学気相蒸着方法 |
US6605735B2 (en) * | 2001-09-12 | 2003-08-12 | Tosoh Corporation | Ruthenium complex, process for producing the same and process for producing thin film |
-
2005
- 2005-06-08 KR KR1020050048753A patent/KR100624514B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001122887A (ja) * | 1999-10-25 | 2001-05-08 | Tanaka Kikinzoku Kogyo Kk | 化学気相蒸着用の有機金属化合物及びその有機金属化合物の製造方法並びにその有機金属化合物を用いた薄膜の製造方法 |
JP2002212112A (ja) * | 2001-01-22 | 2002-07-31 | Tanaka Kikinzoku Kogyo Kk | 化学気相蒸着用のルテニウム化合物並びにルテニウム薄膜及びルテニウム化合物薄膜の化学気相蒸着方法。 |
JP2002308894A (ja) * | 2001-04-13 | 2002-10-23 | Tanaka Kikinzoku Kogyo Kk | ビス(シクロペンタジエニル)ルテニウム誘導体の製造方法及びその方法により製造されるビス(シクロペンタジエニル)ルテニウム誘導体並びにルテニウム薄膜又はルテニウム化合物薄膜の化学気相蒸着方法 |
US6605735B2 (en) * | 2001-09-12 | 2003-08-12 | Tosoh Corporation | Ruthenium complex, process for producing the same and process for producing thin film |
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