DE60211414T2 - Halbleiterlasermodul, optisches räumliches Übertragungssystem und elektronisches Gerät - Google Patents

Halbleiterlasermodul, optisches räumliches Übertragungssystem und elektronisches Gerät Download PDF

Info

Publication number
DE60211414T2
DE60211414T2 DE60211414T DE60211414T DE60211414T2 DE 60211414 T2 DE60211414 T2 DE 60211414T2 DE 60211414 T DE60211414 T DE 60211414T DE 60211414 T DE60211414 T DE 60211414T DE 60211414 T2 DE60211414 T2 DE 60211414T2
Authority
DE
Germany
Prior art keywords
light
semiconductor laser
receiving element
wavelength
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60211414T
Other languages
German (de)
English (en)
Other versions
DE60211414D1 (de
Inventor
Atsushi Nara-shi Shimonaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Application granted granted Critical
Publication of DE60211414D1 publication Critical patent/DE60211414D1/de
Publication of DE60211414T2 publication Critical patent/DE60211414T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/11—Arrangements specific to free-space transmission, i.e. transmission through air or vacuum
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02253—Out-coupling of light using lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/20—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers
    • H10F55/25—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the electric light source controls the radiation-sensitive semiconductor devices, e.g. optocouplers wherein the radiation-sensitive devices and the electric light source are all semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02218—Material of the housings; Filling of the housings
    • H01S5/02234—Resin-filled housings; the housings being made of resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1082—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with a special facet structure, e.g. structured, non planar, oblique
    • H01S5/1085—Oblique facets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/015—Manufacture or treatment of bond wires
    • H10W72/01515—Forming coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Signal Processing (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Light Receiving Elements (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
DE60211414T 2001-04-20 2002-04-18 Halbleiterlasermodul, optisches räumliches Übertragungssystem und elektronisches Gerät Expired - Lifetime DE60211414T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001122399 2001-04-20
JP2001122399 2001-04-20
JP2002026725A JP4097949B2 (ja) 2001-04-20 2002-02-04 空間光伝送システム
JP2002026725 2002-02-04

Publications (2)

Publication Number Publication Date
DE60211414D1 DE60211414D1 (de) 2006-06-22
DE60211414T2 true DE60211414T2 (de) 2007-04-26

Family

ID=26613908

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60211414T Expired - Lifetime DE60211414T2 (de) 2001-04-20 2002-04-18 Halbleiterlasermodul, optisches räumliches Übertragungssystem und elektronisches Gerät

Country Status (4)

Country Link
US (2) US6970489B2 (https=)
EP (2) EP1251607B1 (https=)
JP (1) JP4097949B2 (https=)
DE (1) DE60211414T2 (https=)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6712529B2 (en) * 2000-12-11 2004-03-30 Rohm Co., Ltd. Infrared data communication module and method of making the same
US7061025B2 (en) * 2003-03-10 2006-06-13 Mccolloch Lawrence R Optoelectronic device packaging assemblies and methods of making the same
US7508854B2 (en) * 2003-11-14 2009-03-24 Sanyo Electric Co., Ltd. Semiconductor laser device
JP3857694B2 (ja) * 2004-02-05 2006-12-13 ローム株式会社 光通信モジュール
KR100945621B1 (ko) * 2005-03-07 2010-03-04 로무 가부시키가이샤 광 통신 모듈 및 그 제조 방법
JP4969055B2 (ja) * 2005-04-28 2012-07-04 ローム株式会社 光通信モジュール
US7482666B2 (en) * 2006-01-12 2009-01-27 Silicon Laboratories Inc. Apparatus and method for optical isolation
JP2007258667A (ja) * 2006-02-21 2007-10-04 Seiko Epson Corp 光電気複合基板及び電子機器
JP5114773B2 (ja) * 2007-08-10 2013-01-09 スタンレー電気株式会社 表面実装型発光装置
EP2249201A4 (en) 2008-03-03 2011-08-10 Sharp Kk DISPLAY DEVICE WITH LIGHT SENSOR
US20130223846A1 (en) 2009-02-17 2013-08-29 Trilumina Corporation High speed free-space optical communications
US9620934B2 (en) * 2010-08-31 2017-04-11 Avago Technologies General Ip (Singapore) Pte. Ltd. Flip-chip assembly comprising an array of vertical cavity surface emitting lasers (VCSELs)
US9188751B2 (en) 2010-08-31 2015-11-17 Avago Technologies General Ip (Singapore) Pte. Ltd. Flip-chip assembly comprising an array of vertical cavity surface emitting lasers (VCSELSs), and an optical transmitter assembly that incorporates the flip-chip assembly
WO2012115246A1 (ja) * 2011-02-25 2012-08-30 ローム株式会社 通信モジュールおよび携帯型電子機器
US11095365B2 (en) * 2011-08-26 2021-08-17 Lumentum Operations Llc Wide-angle illuminator module
US20150270900A1 (en) * 2014-03-19 2015-09-24 Apple Inc. Optical data transfer utilizing lens isolation
KR102378761B1 (ko) * 2015-07-21 2022-03-25 엘지이노텍 주식회사 일체형 발광 패키지 및 이를 이용한 차량용 램프
US10539661B2 (en) * 2015-11-25 2020-01-21 Velodyne Lidar, Inc. Three dimensional LIDAR system with targeted field of view
JP6940749B2 (ja) * 2016-04-28 2021-09-29 日亜化学工業株式会社 発光装置
US10148365B2 (en) * 2017-01-05 2018-12-04 Intel Corporation Hybrid free air and electrical interconnect
CN114069378B (zh) * 2020-07-30 2025-07-22 核工业理化工程研究院 一种高功率激光长距离传输装置及其长距离传输方法
DE102022201340A1 (de) * 2022-02-09 2023-08-24 Osram Opto Semiconductors Gmbh Halbleiterlaser mit Strahlungsführungselement

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2737345C2 (de) * 1976-08-20 1991-07-25 Canon K.K., Tokio/Tokyo Halbleiterlaser-Vorrichtung mit einem Peltier-Element
JPS5848443A (ja) * 1981-09-17 1983-03-22 Toshiba Corp 樹脂封止型半導体装置
JPS6063977A (ja) * 1983-09-17 1985-04-12 Mitsubishi Electric Corp 半導体レ−ザ装置
JPS60154689A (ja) * 1984-01-25 1985-08-14 Hitachi Ltd 発光素子およびこれを用いた光通信装置
KR910004265B1 (ko) * 1987-03-26 1991-06-25 가부시기가이샤 히다찌세이사꾸쇼 반도체 레이저 장치와 그 제조 방법 및 그것을 사용한 광 헤드
US5130563A (en) * 1989-11-30 1992-07-14 Washington Research Foundation Optoelectronic sensory neural network
JPH03274781A (ja) * 1990-03-23 1991-12-05 Rohm Co Ltd レーザダイオード
US5140384A (en) * 1990-06-14 1992-08-18 Rohm Co., Ltd. Semiconductor laser device mounted on a stem
JPH0448674A (ja) * 1990-06-14 1992-02-18 Rohm Co Ltd 半導体レーザ
JPH04144396A (ja) * 1990-10-04 1992-05-18 Sony Corp 双方向リモートコントロール装置
US5590144A (en) * 1990-11-07 1996-12-31 Fuji Electric Co., Ltd. Semiconductor laser device
JPH04216682A (ja) * 1990-12-18 1992-08-06 Sumitomo Electric Ind Ltd 受光素子
JPH06252856A (ja) * 1992-12-30 1994-09-09 Canon Inc 近赤外光空間通信装置
US5680241A (en) * 1992-12-30 1997-10-21 Canon Kabushiki Kaisha Optical space communication
JP3110586B2 (ja) * 1993-06-04 2000-11-20 松下電子工業株式会社 半導体レーザ装置
EP0632511A3 (en) * 1993-06-29 1996-11-27 Mitsubishi Cable Ind Ltd Light emitting diode assembly and manufacturing method.
IL114176A (en) * 1995-06-15 2000-02-29 Jolt Ltd Wireless communication system
JPH09252285A (ja) * 1996-03-15 1997-09-22 Toshiba Corp 近赤外線通信装置
JPH10190584A (ja) 1996-10-25 1998-07-21 Seiko Epson Corp 光無線データ通信システムと、それに用いる送信装置、受信装置
US6310707B1 (en) * 1996-10-25 2001-10-30 Seiko Epson Corporation Optical wireless data communication system, and transmitter and receiver used therefor
JP3425310B2 (ja) * 1996-11-25 2003-07-14 シャープ株式会社 発光／受光装置
JP3087676B2 (ja) * 1997-02-13 2000-09-11 日本電気株式会社 ゲル状樹脂を用いた光結合系及び実装構造
US5844257A (en) * 1997-06-12 1998-12-01 Quarton, Inc. Multi-directional light emitting semiconductor device
JP3948789B2 (ja) * 1997-07-02 2007-07-25 シチズン電子株式会社 赤外線データ通信モジュール
US6020590A (en) * 1998-01-22 2000-02-01 Ois Optical Imaging Systems, Inc. Large area imager with UV blocking layer
US6081020A (en) * 1998-02-20 2000-06-27 Lucent Technologies Inc. Linear PIN photodiode
EP1079550B1 (en) * 1998-04-24 2007-10-31 Sharp Kabushiki Kaisha Space-division multiplex full-duplex local area network
US6452669B1 (en) * 1998-08-31 2002-09-17 Digital Optics Corp. Transmission detection for vertical cavity surface emitting laser power monitor and system
US6198800B1 (en) * 1998-09-16 2001-03-06 Canon Kabushiki Kaisha Exposure control for digital radiography systems using charge build-up in sensor array pixels
EP1163711A1 (en) * 1999-03-24 2001-12-19 Cielo Communications, Inc. Encapsulated optoelectronic devices with controlled properties
JP4902044B2 (ja) * 1999-09-24 2012-03-21 シャープ株式会社 半導体レーザ装置、光伝送装置、光伝送システム、電子機器、制御装置、接続コネクタ、通信装置、ならびに光伝送方法、データ送受信方法

Also Published As

Publication number Publication date
JP4097949B2 (ja) 2008-06-11
US20060062269A1 (en) 2006-03-23
JP2003008131A (ja) 2003-01-10
EP1681751A1 (en) 2006-07-19
EP1251607B1 (en) 2006-05-17
EP1251607A2 (en) 2002-10-23
US6970489B2 (en) 2005-11-29
DE60211414D1 (de) 2006-06-22
US20020154667A1 (en) 2002-10-24
EP1251607A3 (en) 2003-05-07

Similar Documents

Publication Publication Date Title
DE60211414T2 (de) Halbleiterlasermodul, optisches räumliches Übertragungssystem und elektronisches Gerät
DE69927447T2 (de) Vorrichtung mit einer optischen Funktion und speziellen Verbindungselektroden
DE19942470B4 (de) Optisches Halbeitermodul und Verfahren zum Herstellen eines optischen Halbleitermoduls
DE69700230T2 (de) Laserlichtquelle
DE69701537T2 (de) Integrierte Laserlichtquelle
DE69827898T2 (de) Optischer Modul
US6683326B2 (en) Semiconductor photodiode and an optical receiver
DE19717562C2 (de) Optische Halbleitervorrichtung und Verfahren zu iherer Herstellung
DE69802028T2 (de) Halbleiterlasergehäuse mit System zur Leistungsüberwachung
DE19640423C1 (de) Optoelektronisches Modul zur bidirektionalen optischen Datenübertragung
EP1203414B1 (de) Optoelektronisches bauelement und verfahren zur herstellung
JPH05198829A (ja) 総合光学ガイドと、光検出器とを備えたオプトエレクトロニックデバイス
US6828541B2 (en) Light receiving element array having isolated pin photodiodes
WO2002084358A1 (de) Sendemodul für eine optische signalübertragung
US6483161B1 (en) Submount with filter layers for mounting a bottom-incidence type photodiode
DE19640421A1 (de) Optoelektronisches Modul zur bidirektionalen optischen Datenübertragung
DE10038671A1 (de) Halbleiterchip für die Optoelektronik
DE4137693C2 (de) Verbund-Halbleitervorrichtung
JP2710070B2 (ja) 半導体受光素子及びこの半導体受光素子を用いた光半導体装置
WO2020244964A1 (de) Halbleiterlaservorrichtung und optoelektronisches strahlumlenkelement für eine halbleiterlaservorrichtung
DE4411380A1 (de) Sende- und Empfangsmodul für optoelektronischen Ping-Pong-Betrieb
WO1998050810A1 (de) Elektrooptisches modul
DE10236376A1 (de) Träger für optoelektronische Bauelemente sowie optische Sendeeinrichtung und optische Empfangseinrichtung
EP0839400B1 (de) Halbleiterlaserchip und infrarot-emitter-bauelement
DE19807782A1 (de) Bauelement mit einem Lichtsender und einem Lichtempfänger

Legal Events

Date Code Title Description
8364 No opposition during term of opposition