DE60201369D1 - Nitrid-Halbleiterlaservorrichtung und deren Herstellungsverfahren - Google Patents

Nitrid-Halbleiterlaservorrichtung und deren Herstellungsverfahren

Info

Publication number
DE60201369D1
DE60201369D1 DE60201369T DE60201369T DE60201369D1 DE 60201369 D1 DE60201369 D1 DE 60201369D1 DE 60201369 T DE60201369 T DE 60201369T DE 60201369 T DE60201369 T DE 60201369T DE 60201369 D1 DE60201369 D1 DE 60201369D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor laser
nitride semiconductor
laser device
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60201369T
Other languages
English (en)
Other versions
DE60201369T2 (de
Inventor
Mamoru Miyachi
Hiroyuki Ota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pioneer Corp
Original Assignee
Pioneer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pioneer Corp filed Critical Pioneer Corp
Application granted granted Critical
Publication of DE60201369D1 publication Critical patent/DE60201369D1/de
Publication of DE60201369T2 publication Critical patent/DE60201369T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0215—Bonding to the substrate
    • H01S5/0216—Bonding to the substrate using an intermediate compound, e.g. a glue or solder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0218—Substrates comprising semiconducting materials from different groups of the periodic system than the active layer

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE60201369T 2001-04-02 2002-03-28 Nitrid-Halbleiterlaservorrichtung und deren Herstellungsverfahren Expired - Lifetime DE60201369T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001103068A JP2002299739A (ja) 2001-04-02 2001-04-02 窒化物半導体レーザ素子及びその製造方法
JP2001103068 2001-04-02

Publications (2)

Publication Number Publication Date
DE60201369D1 true DE60201369D1 (de) 2004-11-04
DE60201369T2 DE60201369T2 (de) 2005-06-30

Family

ID=18956180

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60201369T Expired - Lifetime DE60201369T2 (de) 2001-04-02 2002-03-28 Nitrid-Halbleiterlaservorrichtung und deren Herstellungsverfahren

Country Status (7)

Country Link
US (2) US6647042B2 (de)
EP (1) EP1248335B1 (de)
JP (1) JP2002299739A (de)
KR (1) KR100473349B1 (de)
CN (1) CN1204663C (de)
DE (1) DE60201369T2 (de)
TW (1) TW584889B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4166471B2 (ja) * 2001-12-28 2008-10-15 三菱電機株式会社 光モジュール
JP2004022760A (ja) * 2002-06-14 2004-01-22 Oki Electric Ind Co Ltd レーザダイオード
EP1677397A4 (de) * 2003-10-24 2008-03-19 Pioneer Corp Halbleiterlaser und herstellungsverfahren
JP4539077B2 (ja) * 2003-10-29 2010-09-08 日本電気株式会社 半導体素子の製造方法
JPWO2005055383A1 (ja) * 2003-12-05 2007-12-06 パイオニア株式会社 半導体レーザ装置の製造方法
US7512167B2 (en) * 2004-09-24 2009-03-31 Sanyo Electric Co., Ltd. Integrated semiconductor laser device and method of fabricating the same
JP5638198B2 (ja) * 2005-07-11 2014-12-10 クリー インコーポレイテッドＣｒｅｅ Ｉｎｃ． ミスカット基板上のレーザダイオード配向
JP4845790B2 (ja) * 2007-03-30 2011-12-28 三洋電機株式会社 半導体レーザ素子およびその製造方法
JP2009123939A (ja) * 2007-11-15 2009-06-04 Sanyo Electric Co Ltd 窒化物系半導体素子およびその製造方法
DE102013223115A1 (de) * 2013-11-13 2015-05-28 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zu seiner Herstellung
CN106207753B (zh) * 2016-09-06 2019-09-03 青岛海信宽带多媒体技术有限公司 半导体激光芯片及其制造方法、半导体激光装置
US10193301B2 (en) 2017-03-31 2019-01-29 Nichia Corporation Method of manufacturing light emitting device and light emitting device
JP7048875B2 (ja) 2017-08-30 2022-04-06 日亜化学工業株式会社 発光装置の製造方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5957487A (ja) * 1982-09-27 1984-04-03 Mitsubishi Electric Corp 半導体レ−ザ装置
DE3330392A1 (de) * 1983-08-23 1985-03-07 Siemens AG, 1000 Berlin und 8000 München Laserdiode mit vereinfachter justierung
JPS60105289A (ja) * 1983-11-14 1985-06-10 Toshiba Corp 半導体レ−ザ装置
JPS63208293A (ja) * 1987-02-25 1988-08-29 Hitachi Ltd 半導体レ−ザ装置
JPH0235788A (ja) * 1988-07-26 1990-02-06 Mitsumi Electric Co Ltd 光半導体装置
US5181216A (en) * 1990-08-27 1993-01-19 At&T Bell Laboratories Photonics module apparatus
US5294815A (en) * 1991-07-29 1994-03-15 Ricoh Company, Ltd. Semiconductor light emitting device with terraced structure
KR940010433A (ko) * 1992-10-09 1994-05-26 김광호 반도체 레이저의 제조방법
KR100266839B1 (ko) * 1992-10-14 2000-09-15 이데이 노부유끼 반도체레이저와 그 제법
JPH06196813A (ja) * 1992-10-14 1994-07-15 Sony Corp 半導体レーザとその製法
JP3230638B2 (ja) * 1993-02-10 2001-11-19 シャープ株式会社 発光ダイオードの製造方法
JP3727106B2 (ja) * 1996-04-17 2005-12-14 豊田合成株式会社 ３族窒化物半導体レーザダイオードの製造方法
JP2000244068A (ja) * 1998-12-22 2000-09-08 Pioneer Electronic Corp 窒化物半導体レーザ及びその製造方法
JP3659621B2 (ja) * 1999-02-08 2005-06-15 株式会社東芝 窒化物系半導体レーザ装置の製造方法
JP2000323797A (ja) * 1999-05-10 2000-11-24 Pioneer Electronic Corp 窒化物半導体レーザ及びその製造方法
JP3914670B2 (ja) * 1999-11-18 2007-05-16 パイオニア株式会社 半導体モジュール及び半導体モジュールの半導体レーザ素子の取り付け方法
JP3921940B2 (ja) * 2000-12-07 2007-05-30 住友電気工業株式会社 光送受信モジュール

Also Published As

Publication number Publication date
KR100473349B1 (ko) 2005-03-08
EP1248335B1 (de) 2004-09-29
DE60201369T2 (de) 2005-06-30
US6647042B2 (en) 2003-11-11
US7011982B2 (en) 2006-03-14
US20020142503A1 (en) 2002-10-03
EP1248335A1 (de) 2002-10-09
TW584889B (en) 2004-04-21
JP2002299739A (ja) 2002-10-11
US20040121499A1 (en) 2004-06-24
KR20020077827A (ko) 2002-10-14
CN1204663C (zh) 2005-06-01
CN1379517A (zh) 2002-11-13

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8364 No opposition during term of opposition