DE60201354T2 - Verfahren zur herstellung von polykristallinem silizium - Google Patents
Verfahren zur herstellung von polykristallinem silizium Download PDFInfo
- Publication number
- DE60201354T2 DE60201354T2 DE60201354T DE60201354T DE60201354T2 DE 60201354 T2 DE60201354 T2 DE 60201354T2 DE 60201354 T DE60201354 T DE 60201354T DE 60201354 T DE60201354 T DE 60201354T DE 60201354 T2 DE60201354 T2 DE 60201354T2
- Authority
- DE
- Germany
- Prior art keywords
- tetrachlorosilane
- disilane
- trichlorosilane
- mixture
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 title abstract description 9
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims abstract description 45
- 239000005052 trichlorosilane Substances 0.000 claims abstract description 45
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 38
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 claims abstract description 38
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 239000000203 mixture Substances 0.000 claims abstract description 36
- 238000005984 hydrogenation reaction Methods 0.000 claims abstract description 34
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 31
- 238000006243 chemical reaction Methods 0.000 claims abstract description 31
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 28
- 239000001257 hydrogen Substances 0.000 claims abstract description 26
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical class [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 59
- 238000009835 boiling Methods 0.000 claims description 16
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 16
- 230000000694 effects Effects 0.000 claims description 6
- 239000005046 Chlorosilane Substances 0.000 claims description 5
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 3
- LXEXBJXDGVGRAR-UHFFFAOYSA-N trichloro(trichlorosilyl)silane Chemical compound Cl[Si](Cl)(Cl)[Si](Cl)(Cl)Cl LXEXBJXDGVGRAR-UHFFFAOYSA-N 0.000 claims description 3
- VEYJKODKHGEDMC-UHFFFAOYSA-N dichloro(trichlorosilyl)silicon Chemical compound Cl[Si](Cl)[Si](Cl)(Cl)Cl VEYJKODKHGEDMC-UHFFFAOYSA-N 0.000 claims description 2
- VYFXMIAQVGXIIN-UHFFFAOYSA-N trichloro(chlorosilyl)silane Chemical compound Cl[SiH2][Si](Cl)(Cl)Cl VYFXMIAQVGXIIN-UHFFFAOYSA-N 0.000 claims description 2
- 238000002360 preparation method Methods 0.000 claims 1
- 238000004064 recycling Methods 0.000 claims 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 29
- 239000005049 silicon tetrachloride Substances 0.000 description 29
- 238000005229 chemical vapour deposition Methods 0.000 description 22
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 12
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 12
- 239000000047 product Substances 0.000 description 10
- 238000003776 cleavage reaction Methods 0.000 description 9
- 238000004821 distillation Methods 0.000 description 8
- 230000007017 scission Effects 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 239000003054 catalyst Substances 0.000 description 5
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 229910003902 SiCl 4 Inorganic materials 0.000 description 4
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 4
- 239000011856 silicon-based particle Substances 0.000 description 4
- FXMNVBZEWMANSQ-UHFFFAOYSA-N chloro(silyl)silane Chemical class [SiH3][SiH2]Cl FXMNVBZEWMANSQ-UHFFFAOYSA-N 0.000 description 3
- 238000010960 commercial process Methods 0.000 description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000004817 gas chromatography Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 150000004756 silanes Chemical class 0.000 description 2
- 238000001694 spray drying Methods 0.000 description 2
- 101001094044 Mus musculus Solute carrier family 26 member 6 Proteins 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000001367 organochlorosilanes Chemical class 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000013618 particulate matter Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- QHAHOIWVGZZELU-UHFFFAOYSA-N trichloro(trichlorosilyloxy)silane Chemical compound Cl[Si](Cl)(Cl)O[Si](Cl)(Cl)Cl QHAHOIWVGZZELU-UHFFFAOYSA-N 0.000 description 1
- PPDADIYYMSXQJK-UHFFFAOYSA-N trichlorosilicon Chemical compound Cl[Si](Cl)Cl PPDADIYYMSXQJK-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
- C01B33/043—Monosilane
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/877,674 US20020187096A1 (en) | 2001-06-08 | 2001-06-08 | Process for preparation of polycrystalline silicon |
| US877674 | 2001-06-08 | ||
| PCT/US2002/016754 WO2002100776A1 (en) | 2001-06-08 | 2002-05-23 | Process for preparation of polycrystalline silicon |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60201354D1 DE60201354D1 (de) | 2004-10-28 |
| DE60201354T2 true DE60201354T2 (de) | 2006-02-16 |
Family
ID=25370477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60201354T Expired - Lifetime DE60201354T2 (de) | 2001-06-08 | 2002-05-23 | Verfahren zur herstellung von polykristallinem silizium |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20020187096A1 (https=) |
| EP (1) | EP1392601B1 (https=) |
| JP (2) | JP4532105B2 (https=) |
| AT (1) | ATE276969T1 (https=) |
| DE (1) | DE60201354T2 (https=) |
| WO (1) | WO2002100776A1 (https=) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100731558B1 (ko) * | 2000-08-02 | 2007-06-22 | 미쯔비시 마테리알 폴리실리콘 가부시끼가이샤 | 육염화이규소의 제조 방법 |
| DE102006009954A1 (de) * | 2006-03-03 | 2007-09-06 | Wacker Chemie Ag | Wiederverwertung von hochsiedenden Verbindungen innerhalb eines Chlorsilanverbundes |
| DE102006009953A1 (de) * | 2006-03-03 | 2007-09-06 | Wacker Chemie Ag | Verfahren zur Wiederverwertung von hochsiedenden Verbindungen innerhalb eines Chlorsilanverbundes |
| EP2000195B1 (en) * | 2006-03-07 | 2013-10-23 | Kanken Techno Co. Ltd. | Method of making hcd gas harmless and apparatus therefor |
| CN101460398B (zh) * | 2006-04-13 | 2012-08-29 | 卡伯特公司 | 通过闭合环路方法生产硅 |
| DE102006034061A1 (de) * | 2006-07-20 | 2008-01-24 | REV Renewable Energy Ventures, Inc., Aloha | Polysilanverarbeitung und Verwendung |
| US7935327B2 (en) * | 2006-08-30 | 2011-05-03 | Hemlock Semiconductor Corporation | Silicon production with a fluidized bed reactor integrated into a siemens-type process |
| DE102006043929B4 (de) * | 2006-09-14 | 2016-10-06 | Spawnt Private S.À.R.L. | Verfahren zur Herstellung von festen Polysilanmischungen |
| DE102006050329B3 (de) * | 2006-10-25 | 2007-12-13 | Wacker Chemie Ag | Verfahren zur Herstellung von Trichlorsilan |
| JP5435188B2 (ja) * | 2006-11-14 | 2014-03-05 | 三菱マテリアル株式会社 | 多結晶シリコンの製造方法および多結晶シリコン製造設備 |
| CN101372336B (zh) * | 2007-08-20 | 2011-04-13 | 中国恩菲工程技术有限公司 | 一种多晶硅生产方法 |
| DE102007041803A1 (de) * | 2007-08-30 | 2009-03-05 | Pv Silicon Forschungs Und Produktions Gmbh | Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab |
| JP4714196B2 (ja) * | 2007-09-05 | 2011-06-29 | 信越化学工業株式会社 | トリクロロシランの製造方法および多結晶シリコンの製造方法 |
| JP4659797B2 (ja) | 2007-09-05 | 2011-03-30 | 信越化学工業株式会社 | 多結晶シリコンの製造方法 |
| JP4714197B2 (ja) | 2007-09-05 | 2011-06-29 | 信越化学工業株式会社 | トリクロロシランの製造方法および多結晶シリコンの製造方法 |
| JP4659798B2 (ja) | 2007-09-05 | 2011-03-30 | 信越化学工業株式会社 | トリクロロシランの製造方法 |
| DE102008000052A1 (de) | 2008-01-14 | 2009-07-16 | Wacker Chemie Ag | Verfahren zur Abscheidung von polykristallinem Silicium |
| KR101573933B1 (ko) * | 2008-02-29 | 2015-12-02 | 미쓰비시 마테리알 가부시키가이샤 | 트리클로로실란의 제조 방법 및 제조 장치 |
| JP5444839B2 (ja) * | 2008-05-28 | 2014-03-19 | 三菱マテリアル株式会社 | トリクロロシラン製造装置及び製造方法 |
| JP5316291B2 (ja) * | 2008-08-05 | 2013-10-16 | 三菱マテリアル株式会社 | トリクロロシラン製造装置及び製造方法 |
| JP5316290B2 (ja) * | 2008-08-05 | 2013-10-16 | 三菱マテリアル株式会社 | トリクロロシラン製造装置及び製造方法 |
| KR101332922B1 (ko) * | 2008-12-26 | 2013-11-26 | 미쓰비시 마테리알 가부시키가이샤 | 다결정 실리콘의 세정 방법 및 세정 장치 그리고 다결정 실리콘의 제조 방법 |
| US8168123B2 (en) * | 2009-02-26 | 2012-05-01 | Siliken Chemicals, S.L. | Fluidized bed reactor for production of high purity silicon |
| EP2415712B1 (en) * | 2009-03-30 | 2017-05-03 | Denka Company Limited | Method for collection of hexachlorodisilane |
| US8425855B2 (en) | 2009-04-20 | 2013-04-23 | Robert Froehlich | Reactor with silicide-coated metal surfaces |
| TWI454309B (zh) | 2009-04-20 | 2014-10-01 | Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd | 用於將反應排出氣體冷卻之方法及系統 |
| CN101538044B (zh) * | 2009-04-21 | 2011-04-06 | 天津大学 | 多晶硅生产过程中的三氯氢硅分离提纯系统及操作方法 |
| US20130022745A1 (en) * | 2009-08-14 | 2013-01-24 | American Air Liquide, Inc. | Silane blend for thin film vapor deposition |
| DE102009043946A1 (de) * | 2009-09-04 | 2011-03-17 | G+R Technology Group Ag | Anlage und Verfahren zur Steuerung der Anlage für die Herstellung von polykristallinem Silizium |
| USRE46657E1 (en) * | 2010-12-17 | 2018-01-02 | Dow Corning Corporation | Method of making a trihalosilane |
| US8875728B2 (en) | 2012-07-12 | 2014-11-04 | Siliken Chemicals, S.L. | Cooled gas distribution plate, thermal bridge breaking system, and related methods |
| DE102013207441A1 (de) | 2013-04-24 | 2014-10-30 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Hexachlordisilan durch Spaltung von höheren Polychlorsilanen wie Octachlortrisilan |
| JP6131218B2 (ja) | 2014-06-17 | 2017-05-17 | 信越化学工業株式会社 | 多結晶シリコン棒の表面温度の算出方法および制御方法、多結晶シリコン棒の製造方法、多結晶シリコン棒、ならびに、多結晶シリコン塊 |
| JP6486049B2 (ja) * | 2014-09-25 | 2019-03-20 | デンカ株式会社 | ペンタクロロジシランの製造方法並びに該方法により製造されるペンタクロロジシラン |
| TWI791547B (zh) | 2017-07-31 | 2023-02-11 | 中國大陸商南大光電半導體材料有限公司 | 製備五氯二矽烷之方法及包含五氯二矽烷之經純化的反應產物 |
| CN113371717B (zh) * | 2021-06-10 | 2022-12-27 | 青海亚洲硅业半导体有限公司 | 一种分段控制的多晶硅制备方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3933985A (en) * | 1971-09-24 | 1976-01-20 | Motorola, Inc. | Process for production of polycrystalline silicon |
| US3809571A (en) * | 1972-04-04 | 1974-05-07 | Union Carbide Corp | Process for making silicon metal |
| JPS5673617A (en) * | 1979-11-17 | 1981-06-18 | Osaka Titanium Seizo Kk | Manufacture of trichlorosilane |
| FR2523113A1 (fr) * | 1982-03-10 | 1983-09-16 | G Pi | Procede de regeneration des chlorosilanes et de l'hydrogene non entres en reaction lors de l'obtention de silicium semi-conducteur polycristallin; chlorosilanes et hydrogene regeneres par ledit procede |
| US4526769A (en) * | 1983-07-18 | 1985-07-02 | Motorola, Inc. | Trichlorosilane production process |
| NO881270L (no) * | 1987-05-14 | 1988-11-15 | Dow Corning | Framgangsmaate for aa redusere carboninnholdet i halvledere. |
| JPH0791049B2 (ja) * | 1988-01-21 | 1995-10-04 | 大阪チタニウム製造株式会社 | 多結晶シリコンの製造におけるポリマーのトリクロロシラン転化方法 |
| US5118485A (en) * | 1988-03-25 | 1992-06-02 | Hemlock Semiconductor Corporation | Recovery of lower-boiling silanes in a cvd process |
| US5118486A (en) * | 1991-04-26 | 1992-06-02 | Hemlock Semiconductor Corporation | Separation by atomization of by-product stream into particulate silicon and silanes |
| JP3853894B2 (ja) * | 1996-01-23 | 2006-12-06 | 株式会社トクヤマ | 塩化水素の減少した混合物の製造方法 |
-
2001
- 2001-06-08 US US09/877,674 patent/US20020187096A1/en not_active Abandoned
-
2002
- 2002-05-23 EP EP02737219A patent/EP1392601B1/en not_active Expired - Lifetime
- 2002-05-23 WO PCT/US2002/016754 patent/WO2002100776A1/en not_active Ceased
- 2002-05-23 DE DE60201354T patent/DE60201354T2/de not_active Expired - Lifetime
- 2002-05-23 JP JP2003503550A patent/JP4532105B2/ja not_active Expired - Fee Related
- 2002-05-23 AT AT02737219T patent/ATE276969T1/de not_active IP Right Cessation
-
2008
- 2008-08-19 JP JP2008210876A patent/JP5374091B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP5374091B2 (ja) | 2013-12-25 |
| EP1392601B1 (en) | 2004-09-22 |
| EP1392601A1 (en) | 2004-03-03 |
| DE60201354D1 (de) | 2004-10-28 |
| JP4532105B2 (ja) | 2010-08-25 |
| JP2008303142A (ja) | 2008-12-18 |
| JP2004532786A (ja) | 2004-10-28 |
| ATE276969T1 (de) | 2004-10-15 |
| US20020187096A1 (en) | 2002-12-12 |
| WO2002100776A1 (en) | 2002-12-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8381 | Inventor (new situation) |
Inventor name: KENDIG, EDWARD, JAMES, MIDLAND, US Inventor name: LANDIS, RUSSELL, DAVID, MIDLAND, US Inventor name: MCQUISTON, MICHAEL, TODD, MIDLAND, US Inventor name: ZALAR, MATTHEW, MICHAEL, MIDLAND, US Inventor name: HARDER, PATRICK JAMES, MIDLAND, MICH., US |