DE60201354D1 - Verfahren zur herstellung von polykristallinem silizium - Google Patents

Verfahren zur herstellung von polykristallinem silizium

Info

Publication number
DE60201354D1
DE60201354D1 DE60201354T DE60201354T DE60201354D1 DE 60201354 D1 DE60201354 D1 DE 60201354D1 DE 60201354 T DE60201354 T DE 60201354T DE 60201354 T DE60201354 T DE 60201354T DE 60201354 D1 DE60201354 D1 DE 60201354D1
Authority
DE
Germany
Prior art keywords
polycrystalline silicon
producing polycrystalline
tetrachlorosilane
hydrogen
disilane
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60201354T
Other languages
English (en)
Other versions
DE60201354T2 (de
Inventor
Edward Kendig
Russell Landis
Michael Mcquiston
Matthew Zalar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hemlock Semiconductor Operations LLC
Original Assignee
Hemlock Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hemlock Semiconductor Corp filed Critical Hemlock Semiconductor Corp
Application granted granted Critical
Publication of DE60201354D1 publication Critical patent/DE60201354D1/de
Publication of DE60201354T2 publication Critical patent/DE60201354T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C01B33/043—Monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
DE60201354T 2001-06-08 2002-05-23 Verfahren zur herstellung von polykristallinem silizium Expired - Lifetime DE60201354T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US877674 2001-06-08
US09/877,674 US20020187096A1 (en) 2001-06-08 2001-06-08 Process for preparation of polycrystalline silicon
PCT/US2002/016754 WO2002100776A1 (en) 2001-06-08 2002-05-23 Process for preparation of polycrystalline silicon

Publications (2)

Publication Number Publication Date
DE60201354D1 true DE60201354D1 (de) 2004-10-28
DE60201354T2 DE60201354T2 (de) 2006-02-16

Family

ID=25370477

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60201354T Expired - Lifetime DE60201354T2 (de) 2001-06-08 2002-05-23 Verfahren zur herstellung von polykristallinem silizium

Country Status (6)

Country Link
US (1) US20020187096A1 (de)
EP (1) EP1392601B1 (de)
JP (2) JP4532105B2 (de)
AT (1) ATE276969T1 (de)
DE (1) DE60201354T2 (de)
WO (1) WO2002100776A1 (de)

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DE102006009953A1 (de) * 2006-03-03 2007-09-06 Wacker Chemie Ag Verfahren zur Wiederverwertung von hochsiedenden Verbindungen innerhalb eines Chlorsilanverbundes
DE102006009954A1 (de) * 2006-03-03 2007-09-06 Wacker Chemie Ag Wiederverwertung von hochsiedenden Verbindungen innerhalb eines Chlorsilanverbundes
KR101341360B1 (ko) * 2006-03-07 2013-12-13 도아고세이가부시키가이샤 Ｈｃｄ 가스의 제해방법과 제해장치
WO2007120871A2 (en) * 2006-04-13 2007-10-25 Cabot Corporation Production of silicon through a closed-loop process
DE102006034061A1 (de) * 2006-07-20 2008-01-24 REV Renewable Energy Ventures, Inc., Aloha Polysilanverarbeitung und Verwendung
US7935327B2 (en) * 2006-08-30 2011-05-03 Hemlock Semiconductor Corporation Silicon production with a fluidized bed reactor integrated into a siemens-type process
DE102006043929B4 (de) * 2006-09-14 2016-10-06 Spawnt Private S.À.R.L. Verfahren zur Herstellung von festen Polysilanmischungen
DE102006050329B3 (de) * 2006-10-25 2007-12-13 Wacker Chemie Ag Verfahren zur Herstellung von Trichlorsilan
JP5435188B2 (ja) * 2006-11-14 2014-03-05 三菱マテリアル株式会社 多結晶シリコンの製造方法および多結晶シリコン製造設備
CN101372336B (zh) * 2007-08-20 2011-04-13 中国恩菲工程技术有限公司 一种多晶硅生产方法
DE102007041803A1 (de) 2007-08-30 2009-03-05 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung von polykristallinen Siliziumstäben und polykristalliner Siliziumstab
JP4714197B2 (ja) * 2007-09-05 2011-06-29 信越化学工業株式会社 トリクロロシランの製造方法および多結晶シリコンの製造方法
JP4714196B2 (ja) * 2007-09-05 2011-06-29 信越化学工業株式会社 トリクロロシランの製造方法および多結晶シリコンの製造方法
JP4659798B2 (ja) 2007-09-05 2011-03-30 信越化学工業株式会社 トリクロロシランの製造方法
JP4659797B2 (ja) 2007-09-05 2011-03-30 信越化学工業株式会社 多結晶シリコンの製造方法
DE102008000052A1 (de) 2008-01-14 2009-07-16 Wacker Chemie Ag Verfahren zur Abscheidung von polykristallinem Silicium
KR101573933B1 (ko) * 2008-02-29 2015-12-02 미쓰비시 마테리알 가부시키가이샤 트리클로로실란의 제조 방법 및 제조 장치
JP5444839B2 (ja) * 2008-05-28 2014-03-19 三菱マテリアル株式会社 トリクロロシラン製造装置及び製造方法
JP5316291B2 (ja) * 2008-08-05 2013-10-16 三菱マテリアル株式会社 トリクロロシラン製造装置及び製造方法
JP5316290B2 (ja) * 2008-08-05 2013-10-16 三菱マテリアル株式会社 トリクロロシラン製造装置及び製造方法
EP2381017B1 (de) * 2008-12-26 2019-11-20 Mitsubishi Materials Corporation Verfahren zum waschen von polykristallinem silicium, waschvorrichtung und verfahren zur herstellung von polykristallinem silicium
US8168123B2 (en) * 2009-02-26 2012-05-01 Siliken Chemicals, S.L. Fluidized bed reactor for production of high purity silicon
EP2415712B1 (de) * 2009-03-30 2017-05-03 Denka Company Limited Verfahren zum auffangen von hexachlordisilan
TWI454309B (zh) 2009-04-20 2014-10-01 Jiangsu Zhongneng Polysilicon Technology Dev Co Ltd 用於將反應排出氣體冷卻之方法及系統
US8425855B2 (en) 2009-04-20 2013-04-23 Robert Froehlich Reactor with silicide-coated metal surfaces
CN101538044B (zh) * 2009-04-21 2011-04-06 天津大学 多晶硅生产过程中的三氯氢硅分离提纯系统及操作方法
WO2011020028A2 (en) * 2009-08-14 2011-02-17 L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude Silane blend for thin film vapor deposition
DE102009043946A1 (de) * 2009-09-04 2011-03-17 G+R Technology Group Ag Anlage und Verfahren zur Steuerung der Anlage für die Herstellung von polykristallinem Silizium
KR101857480B1 (ko) * 2010-12-17 2018-05-14 다우 실리콘즈 코포레이션 트라이할로실란의 제조 방법
US8875728B2 (en) 2012-07-12 2014-11-04 Siliken Chemicals, S.L. Cooled gas distribution plate, thermal bridge breaking system, and related methods
DE102013207441A1 (de) 2013-04-24 2014-10-30 Evonik Degussa Gmbh Verfahren zur Herstellung von Hexachlordisilan durch Spaltung von höheren Polychlorsilanen wie Octachlortrisilan
JP6131218B2 (ja) 2014-06-17 2017-05-17 信越化学工業株式会社 多結晶シリコン棒の表面温度の算出方法および制御方法、多結晶シリコン棒の製造方法、多結晶シリコン棒、ならびに、多結晶シリコン塊
JP6486049B2 (ja) 2014-09-25 2019-03-20 デンカ株式会社 ペンタクロロジシランの製造方法並びに該方法により製造されるペンタクロロジシラン
TWI791547B (zh) 2017-07-31 2023-02-11 中國大陸商南大光電半導體材料有限公司 製備五氯二矽烷之方法及包含五氯二矽烷之經純化的反應產物
CN113371717B (zh) * 2021-06-10 2022-12-27 青海亚洲硅业半导体有限公司 一种分段控制的多晶硅制备方法

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US3933985A (en) * 1971-09-24 1976-01-20 Motorola, Inc. Process for production of polycrystalline silicon
US3809571A (en) * 1972-04-04 1974-05-07 Union Carbide Corp Process for making silicon metal
JPS5673617A (en) * 1979-11-17 1981-06-18 Osaka Titanium Seizo Kk Manufacture of trichlorosilane
FR2523113A1 (fr) * 1982-03-10 1983-09-16 G Pi Procede de regeneration des chlorosilanes et de l'hydrogene non entres en reaction lors de l'obtention de silicium semi-conducteur polycristallin; chlorosilanes et hydrogene regeneres par ledit procede
US4526769A (en) * 1983-07-18 1985-07-02 Motorola, Inc. Trichlorosilane production process
NO881270L (no) * 1987-05-14 1988-11-15 Dow Corning Framgangsmaate for aa redusere carboninnholdet i halvledere.
JPH0791049B2 (ja) * 1988-01-21 1995-10-04 大阪チタニウム製造株式会社 多結晶シリコンの製造におけるポリマーのトリクロロシラン転化方法
US5118485A (en) * 1988-03-25 1992-06-02 Hemlock Semiconductor Corporation Recovery of lower-boiling silanes in a cvd process
US5118486A (en) * 1991-04-26 1992-06-02 Hemlock Semiconductor Corporation Separation by atomization of by-product stream into particulate silicon and silanes
JP3853894B2 (ja) * 1996-01-23 2006-12-06 株式会社トクヤマ 塩化水素の減少した混合物の製造方法

Also Published As

Publication number Publication date
JP5374091B2 (ja) 2013-12-25
EP1392601A1 (de) 2004-03-03
DE60201354T2 (de) 2006-02-16
JP2004532786A (ja) 2004-10-28
WO2002100776A1 (en) 2002-12-19
JP2008303142A (ja) 2008-12-18
JP4532105B2 (ja) 2010-08-25
US20020187096A1 (en) 2002-12-12
ATE276969T1 (de) 2004-10-15
EP1392601B1 (de) 2004-09-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8381 Inventor (new situation)

Inventor name: KENDIG, EDWARD, JAMES, MIDLAND, US

Inventor name: LANDIS, RUSSELL, DAVID, MIDLAND, US

Inventor name: MCQUISTON, MICHAEL, TODD, MIDLAND, US

Inventor name: ZALAR, MATTHEW, MICHAEL, MIDLAND, US

Inventor name: HARDER, PATRICK JAMES, MIDLAND, MICH., US