DE60200630T2 - Wärmeleitende Siliconzusammensetzung und Halbleiteranordnung - Google Patents

Wärmeleitende Siliconzusammensetzung und Halbleiteranordnung Download PDF

Info

Publication number
DE60200630T2
DE60200630T2 DE2002600630 DE60200630T DE60200630T2 DE 60200630 T2 DE60200630 T2 DE 60200630T2 DE 2002600630 DE2002600630 DE 2002600630 DE 60200630 T DE60200630 T DE 60200630T DE 60200630 T2 DE60200630 T2 DE 60200630T2
Authority
DE
Germany
Prior art keywords
composition
groups
component
carbon atoms
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE2002600630
Other languages
German (de)
English (en)
Other versions
DE60200630D1 (de
Inventor
Kunihiro Usui-gun Yamada
Kenichi Usui-gun Isobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Publication of DE60200630D1 publication Critical patent/DE60200630D1/de
Application granted granted Critical
Publication of DE60200630T2 publication Critical patent/DE60200630T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3737—Organic materials with or without a thermoconductive filler
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/12—Polysiloxanes containing silicon bound to hydrogen
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/20—Polysiloxanes containing silicon bound to unsaturated aliphatic groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C08K2003/0812—Aluminium
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C08K2003/2296—Oxides; Hydroxides of metals of zinc
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
DE2002600630 2001-05-01 2002-04-29 Wärmeleitende Siliconzusammensetzung und Halbleiteranordnung Expired - Lifetime DE60200630T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001133895A JP3580366B2 (ja) 2001-05-01 2001-05-01 熱伝導性シリコーン組成物及び半導体装置
JP2001133895 2001-05-01

Publications (2)

Publication Number Publication Date
DE60200630D1 DE60200630D1 (de) 2004-07-22
DE60200630T2 true DE60200630T2 (de) 2005-06-30

Family

ID=18981678

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2002600630 Expired - Lifetime DE60200630T2 (de) 2001-05-01 2002-04-29 Wärmeleitende Siliconzusammensetzung und Halbleiteranordnung

Country Status (5)

Country Link
US (1) US6649258B2 (enExample)
EP (1) EP1254924B1 (enExample)
JP (1) JP3580366B2 (enExample)
DE (1) DE60200630T2 (enExample)
TW (1) TWI303261B (enExample)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7060747B2 (en) 2001-03-30 2006-06-13 Intel Corporation Chain extension for thermal materials
JP3803058B2 (ja) * 2001-12-11 2006-08-02 信越化学工業株式会社 熱伝導性シリコーン組成物、その硬化物及び敷設方法並びにそれを用いた半導体装置の放熱構造体
JP2004176016A (ja) * 2002-11-29 2004-06-24 Shin Etsu Chem Co Ltd 熱伝導性シリコーン組成物及びその成形体
US6992893B2 (en) * 2003-01-10 2006-01-31 Hewlett-Packard Development Company, L.P. Heat sink attachment
US7645422B2 (en) 2003-04-11 2010-01-12 Therm-O-Disc, Incorporated Vapor sensor and materials therefor
JP3932125B2 (ja) 2003-08-14 2007-06-20 信越化学工業株式会社 熱軟化性熱伝導性部材
JP2005064291A (ja) * 2003-08-14 2005-03-10 Nissan Motor Co Ltd 絶縁シートおよびこの絶縁シートを用いた半導体装置組立体
JP4154605B2 (ja) * 2004-01-23 2008-09-24 信越化学工業株式会社 熱伝導性シリコーン放熱用組成物及び放熱構造の製造方法
US7119143B2 (en) * 2004-03-04 2006-10-10 Laird Technologies, Inc. Silicone pads for electronics thermal management
TWI385246B (zh) 2004-05-21 2013-02-11 信越化學工業股份有限公司 聚矽氧烷潤滑油組成物
US7211637B2 (en) * 2004-06-03 2007-05-01 Therm-O-Disc, Incorporated Sterically hindered reagents for use in single component siloxane cure systems
JP4687887B2 (ja) * 2004-10-14 2011-05-25 信越化学工業株式会社 熱伝導性シリコーングリース組成物
JP2006143978A (ja) * 2004-11-25 2006-06-08 Ge Toshiba Silicones Co Ltd 熱伝導性シリコーン組成物
US7708947B2 (en) 2005-11-01 2010-05-04 Therm-O-Disc, Incorporated Methods of minimizing temperature cross-sensitivity in vapor sensors and compositions therefor
TWI285675B (en) * 2005-12-16 2007-08-21 Foxconn Tech Co Ltd Heat conductive grease and semiconductor device
US20070219312A1 (en) * 2006-03-17 2007-09-20 Jennifer Lynn David Silicone adhesive composition and method for preparing the same
EP1878767A1 (en) * 2006-07-12 2008-01-16 Shin-Etsu Chemical Co., Ltd. Heat conductive silicone grease composition and cured product thereof
US8012420B2 (en) 2006-07-18 2011-09-06 Therm-O-Disc, Incorporated Robust low resistance vapor sensor materials
JP2008106185A (ja) * 2006-10-27 2008-05-08 Shin Etsu Chem Co Ltd 熱伝導性シリコーン組成物の接着方法、熱伝導性シリコーン組成物接着用プライマー及び熱伝導性シリコーン組成物の接着複合体の製造方法
JP2007150349A (ja) * 2007-02-09 2007-06-14 Shin Etsu Chem Co Ltd 熱軟化性熱伝導性部材
US8691390B2 (en) 2007-11-20 2014-04-08 Therm-O-Disc, Incorporated Single-use flammable vapor sensor films
US20090143522A1 (en) * 2007-12-04 2009-06-04 Sea-Fue Wang Thermally Conductive Silicone Composition
US8106119B2 (en) * 2007-12-04 2012-01-31 Sea-Fue Wang Thermally conductive silicone composition
JP2008160126A (ja) * 2007-12-21 2008-07-10 Shin Etsu Chem Co Ltd 電子部品の冷却構造
JP5372388B2 (ja) 2008-01-30 2013-12-18 東レ・ダウコーニング株式会社 熱伝導性シリコーングリース組成物
JP4656340B2 (ja) * 2008-03-03 2011-03-23 信越化学工業株式会社 熱伝導性シリコーングリース組成物
JP6014299B2 (ja) * 2008-09-01 2016-10-25 東レ・ダウコーニング株式会社 熱伝導性シリコーン組成物及び半導体装置
JP5182515B2 (ja) * 2008-12-25 2013-04-17 信越化学工業株式会社 熱伝導性シリコーングリース組成物
JP5111451B2 (ja) * 2009-07-01 2013-01-09 信越化学工業株式会社 熱伝導性シリコーン組成物の接着方法、熱伝導性シリコーン組成物接着用プライマー及び熱伝導性シリコーン組成物の接着複合体の製造方法
JP5365572B2 (ja) 2010-04-13 2013-12-11 信越化学工業株式会社 室温湿気増粘型熱伝導性シリコーングリース組成物
CN102234427B (zh) * 2010-04-29 2013-01-30 比亚迪股份有限公司 一种硅橡胶组合物及硅橡胶的制备方法
JP2012077256A (ja) 2010-10-06 2012-04-19 Shin-Etsu Chemical Co Ltd 室温湿気増粘型熱伝導性シリコーングリース組成物
CN103298887A (zh) 2011-01-26 2013-09-11 道康宁公司 高温稳定的导热材料
JP5733087B2 (ja) 2011-07-29 2015-06-10 信越化学工業株式会社 室温湿気増粘型熱伝導性シリコーングリース組成物
US20150008361A1 (en) * 2012-03-02 2015-01-08 Fuji Polymer Industries Co., Ltd. Putty-like heat transfer material and method for producing the same
JP5783128B2 (ja) 2012-04-24 2015-09-24 信越化学工業株式会社 加熱硬化型熱伝導性シリコーングリース組成物
JP2014003141A (ja) * 2012-06-18 2014-01-09 Shin Etsu Chem Co Ltd 熱伝導性シート及び電子機器
JP5832983B2 (ja) * 2012-10-18 2015-12-16 信越化学工業株式会社 シリコーン組成物
US9698077B2 (en) 2013-01-22 2017-07-04 Shin-Etsu Chemical Co., Ltd. Heat conductive silicone composition based on combination of components, heat conductive layer, and semiconductor device
JP5843368B2 (ja) * 2013-05-07 2016-01-13 信越化学工業株式会社 熱伝導性シリコーン組成物及びその硬化物
JP5898139B2 (ja) 2013-05-24 2016-04-06 信越化学工業株式会社 熱伝導性シリコーン組成物
JP5947267B2 (ja) 2013-09-20 2016-07-06 信越化学工業株式会社 シリコーン組成物及び熱伝導性シリコーン組成物の製造方法
US20150259584A1 (en) * 2014-03-11 2015-09-17 Randall D. Lowe, JR. Integrated heat spreader sealants for microelectronic packaging
JP6023737B2 (ja) * 2014-03-18 2016-11-09 信越化学工業株式会社 ウエハ加工体、ウエハ加工用仮接着材、及び薄型ウエハの製造方法
JP6149831B2 (ja) 2014-09-04 2017-06-21 信越化学工業株式会社 シリコーン組成物
CN106715592A (zh) 2014-09-25 2017-05-24 信越化学工业株式会社 紫外线增稠型导热性硅润滑脂组合物
JP6260519B2 (ja) 2014-11-25 2018-01-17 信越化学工業株式会社 一液付加硬化型シリコーン組成物の保存方法及び硬化方法
JP6510315B2 (ja) * 2015-05-14 2019-05-08 デンカ株式会社 熱伝導性グリース用組成物、熱伝導性グリースおよび放熱部材
EP3299419B1 (en) * 2015-05-22 2021-07-07 Momentive Performance Materials Japan LLC Thermally conductive composition
JP6524879B2 (ja) 2015-10-13 2019-06-05 信越化学工業株式会社 付加一液硬化型熱伝導性シリコーングリース組成物
JP6465037B2 (ja) 2016-01-07 2019-02-06 信越化学工業株式会社 縮合硬化反応と有機過酸化物硬化反応を併用したシリコーン組成物
CN109072051B (zh) * 2016-03-08 2023-12-26 霍尼韦尔国际公司 相变材料
JP6642145B2 (ja) 2016-03-14 2020-02-05 信越化学工業株式会社 付加一液加熱硬化型熱伝導性シリコーングリース組成物の硬化物の製造方法
JP6531238B2 (ja) 2016-10-31 2019-06-19 ダウ・東レ株式会社 １液硬化型熱伝導性シリコーングリース組成物及び電子・電装部品
JP6874366B2 (ja) * 2016-12-28 2021-05-19 信越化学工業株式会社 シリコーン組成物およびその硬化物
CN110234711B (zh) 2017-01-27 2022-02-11 迈图高新材料日本合同公司 导热性聚硅氧烷组合物
JP6383885B2 (ja) 2017-01-27 2018-08-29 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 熱伝導性ポリオルガノシロキサン組成物
US10501597B2 (en) 2017-02-08 2019-12-10 Elkem Silicones USA Corp. Secondary battery pack with improved thermal management
CN111051433B (zh) * 2017-07-24 2022-12-30 陶氏东丽株式会社 导热性硅酮凝胶组合物、导热性部件及散热构造体
WO2019138991A1 (ja) 2018-01-15 2019-07-18 信越化学工業株式会社 シリコーン組成物
CN111918929B (zh) 2018-03-23 2022-11-29 信越化学工业株式会社 有机硅组合物
JP7476793B2 (ja) 2018-10-12 2024-05-01 信越化学工業株式会社 付加硬化型シリコーン組成物及びその製造方法
JP6959950B2 (ja) 2019-03-04 2021-11-05 信越化学工業株式会社 非硬化型熱伝導性シリコーン組成物
CN113519051A (zh) 2019-03-29 2021-10-19 陶氏东丽株式会社 多组分导热硅酮凝胶组合物、导热部件以及散热结构体
JP7027368B2 (ja) 2019-04-01 2022-03-01 信越化学工業株式会社 熱伝導性シリコーン組成物、その製造方法及び半導体装置
WO2021059936A1 (ja) 2019-09-27 2021-04-01 信越化学工業株式会社 熱伝導性シリコーン組成物及びその製造方法、並びに半導体装置
JP7276493B2 (ja) * 2019-10-24 2023-05-18 信越化学工業株式会社 熱伝導性シリコーン組成物及びその製造方法
JP7325324B2 (ja) 2019-12-23 2023-08-14 信越化学工業株式会社 熱伝導性シリコーン組成物
CN115210321A (zh) * 2020-03-16 2022-10-18 美国陶氏有机硅公司 导热有机硅组合物
EP4211182A4 (en) * 2020-09-07 2023-10-18 Wacker Chemie AG HYDROGEN POLYORGANOSILOXANE AND THERMALLY CONDUCTIVE SILICONE COMPOSITION THEREOF
CN116368195A (zh) * 2020-09-23 2023-06-30 陶氏环球技术有限责任公司 具有低分配粘度、分配后具有低竖向流动且固化后具有低热阻抗的热界面材料
KR102873150B1 (ko) * 2020-09-29 2025-10-17 주식회사 엘지에너지솔루션 경화성 조성물 및 2액형 수지 조성물
KR102873146B1 (ko) * 2020-09-29 2025-10-17 주식회사 엘지에너지솔루션 경화성 조성물 및 2액형 수지 조성물
EP4469519B1 (de) 2022-01-28 2025-08-27 Wacker Chemie AG Aluminiumhaltige wärmeleitpasten
JP7644726B2 (ja) 2022-01-31 2025-03-12 信越化学工業株式会社 熱伝導性付加硬化型シリコーン組成物、及びその硬化物
EP4488335A1 (en) 2022-02-28 2025-01-08 Shin-Etsu Chemical Co., Ltd. Thermally conductive silicone composition
KR20240157075A (ko) 2022-03-08 2024-10-31 신에쓰 가가꾸 고교 가부시끼가이샤 2액형 열전도성 부가 경화형 실리콘 조성물 및 그 실리콘 경화물
US20250188225A1 (en) 2022-03-08 2025-06-12 Shin-Etsu Chemical Co., Ltd. Thermally-conductive addition-curable silicone composition and cured product thereof
JP7630895B2 (ja) * 2022-05-25 2025-02-18 信越化学工業株式会社 絶縁性熱伝導シート
WO2025118170A1 (en) * 2023-12-06 2025-06-12 Henkel Ag & Co. Kgaa Thermally conductive silicone adhesive composition

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61157569A (ja) 1984-12-28 1986-07-17 Shin Etsu Polymer Co Ltd 熱伝導性接着組成物
US4845164A (en) 1986-03-03 1989-07-04 Dow Corning Corporation Liquid curable polyorganosiloxane compositions
JPH0297559A (ja) * 1988-10-03 1990-04-10 Toshiba Silicone Co Ltd 熱伝導性シリコーン組成物
CA2035964A1 (en) * 1990-03-06 1991-09-07 Carl R. Kessel Solventless silicon release coating
JP3592809B2 (ja) * 1995-09-13 2004-11-24 東レ・ダウコーニング・シリコーン株式会社 フッ素樹脂被覆定着ロール用シリコーンゴム組成物およびフッ素樹脂被覆定着ロール
JPH08208993A (ja) 1995-11-27 1996-08-13 Toshiba Silicone Co Ltd 熱伝導性シリコーン組成物
US6069201A (en) 1997-09-12 2000-05-30 Shin-Etsu Chemical Co., Ltd. Zinc oxide-filled addition-curable silicone rubber compositions
JP3948642B2 (ja) * 1998-08-21 2007-07-25 信越化学工業株式会社 熱伝導性グリース組成物及びそれを使用した半導体装置
JP4639361B2 (ja) * 2000-05-26 2011-02-23 東レ・ダウコーニング株式会社 剥離性硬化皮膜形成用シリコーン組成物
JP3580358B2 (ja) * 2000-06-23 2004-10-20 信越化学工業株式会社 熱伝導性シリコーン組成物及び半導体装置

Also Published As

Publication number Publication date
US20030049466A1 (en) 2003-03-13
DE60200630D1 (de) 2004-07-22
TWI303261B (enExample) 2008-11-21
EP1254924A1 (en) 2002-11-06
EP1254924B1 (en) 2004-06-16
JP2002327116A (ja) 2002-11-15
JP3580366B2 (ja) 2004-10-20
US6649258B2 (en) 2003-11-18

Similar Documents

Publication Publication Date Title
DE60200630T2 (de) Wärmeleitende Siliconzusammensetzung und Halbleiteranordnung
DE60104944T2 (de) Wärmeleitende Siliconzusammensetzung und Halbleiteranordnung
DE60215105T2 (de) Wärmeleitfähige vernetzbare Silikonzusammensetzung sowie eine wärmeableitende Halbleiterstruktur
TWI351432B (enExample)
JP4656340B2 (ja) 熱伝導性シリコーングリース組成物
US7141273B2 (en) Curable organopolysiloxane composition and semiconductor device
CA2896300C (en) Heat conductive silicone composition, heat conductive layer, and semiconductor device
KR101244566B1 (ko) 열전도성 실리콘 그리스 조성물 및 그의 경화물
US20030207064A1 (en) Conformal thermal interface material for electronic components
CN107406678B (zh) 热传导性硅酮组合物
EP1878767A1 (en) Heat conductive silicone grease composition and cured product thereof
JP2008038137A (ja) 熱伝導性シリコーングリース組成物およびその硬化物
KR20130039305A (ko) 경화성 오르가노폴리실록산 조성물 및 반도체 장치
EP3951862A1 (en) Multicomponent type thermally conductive silicone gel composition, thermally conductive member and heat dissipation structure
JP2010150399A (ja) 熱伝導性シリコーングリース組成物
JP5047505B2 (ja) 放熱性に優れる電子装置およびその製造方法
US20250115799A1 (en) Thermal Interface Materials with Soft Filler Dispersions
TW202242026A (zh) 固化性有機聚矽氧烷組合物、熱傳導矽酮潤滑脂組合物、固化物、固化物的用途、半導體裝置及其製造方法

Legal Events

Date Code Title Description
8364 No opposition during term of opposition