DE602005010804D1 - Herstellung von Metallverbindungen der 12. und 13. Gruppe, die niedrige Mengen an Sauerstoff-enthaltenden Verunreinigungen aufweisen - Google Patents
Herstellung von Metallverbindungen der 12. und 13. Gruppe, die niedrige Mengen an Sauerstoff-enthaltenden Verunreinigungen aufweisenInfo
- Publication number
- DE602005010804D1 DE602005010804D1 DE602005010804T DE602005010804T DE602005010804D1 DE 602005010804 D1 DE602005010804 D1 DE 602005010804D1 DE 602005010804 T DE602005010804 T DE 602005010804T DE 602005010804 T DE602005010804 T DE 602005010804T DE 602005010804 D1 DE602005010804 D1 DE 602005010804D1
- Authority
- DE
- Germany
- Prior art keywords
- oxygen
- preparation
- low levels
- metal compounds
- group metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title 1
- 239000012535 impurity Substances 0.000 title 1
- 150000002736 metal compounds Chemical class 0.000 title 1
- 229910052760 oxygen Inorganic materials 0.000 title 1
- 239000001301 oxygen Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G15/00—Compounds of gallium, indium or thallium
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
- C07F5/061—Aluminium compounds with C-aluminium linkage
- C07F5/064—Aluminium compounds with C-aluminium linkage compounds with an Al-Halogen linkage
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G13/00—Compounds of mercury
- C01G13/04—Halides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/04—Halides
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic Table
- C07F3/06—Zinc compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
- C07F5/061—Aluminium compounds with C-aluminium linkage
- C07F5/062—Al linked exclusively to C
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US60679504P | 2004-09-02 | 2004-09-02 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005010804D1 true DE602005010804D1 (de) | 2008-12-18 |
Family
ID=35601836
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005010804T Active DE602005010804D1 (de) | 2004-09-02 | 2005-09-02 | Herstellung von Metallverbindungen der 12. und 13. Gruppe, die niedrige Mengen an Sauerstoff-enthaltenden Verunreinigungen aufweisen |
Country Status (7)
Country | Link |
---|---|
US (1) | US7166734B2 (de) |
EP (1) | EP1643547B1 (de) |
JP (1) | JP5052774B2 (de) |
KR (1) | KR101117139B1 (de) |
CN (1) | CN100358903C (de) |
DE (1) | DE602005010804D1 (de) |
TW (1) | TW200619222A (de) |
Families Citing this family (67)
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US9481943B2 (en) * | 2006-11-22 | 2016-11-01 | Soitec | Gallium trichloride injection scheme |
US9481944B2 (en) | 2006-11-22 | 2016-11-01 | Soitec | Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same |
JP5168919B2 (ja) * | 2007-01-30 | 2013-03-27 | 宇部興産株式会社 | 高純度トリアルキルインジウム及びその製法 |
JP2008263023A (ja) * | 2007-04-11 | 2008-10-30 | Sumitomo Electric Ind Ltd | Iii−v族化合物半導体の製造方法、ショットキーバリアダイオード、発光ダイオード、レーザダイオード、およびそれらの製造方法 |
US20100139554A1 (en) * | 2008-12-08 | 2010-06-10 | Applied Materials, Inc. | Methods and apparatus for making gallium nitride and gallium aluminum nitride thin films |
JP5423039B2 (ja) * | 2009-02-23 | 2014-02-19 | 宇部興産株式会社 | 高純度トリアルキルガリウム及びその製造方法 |
JP2011054935A (ja) * | 2009-06-19 | 2011-03-17 | Rohm & Haas Electronic Materials Llc | ドーピング方法 |
TWI529808B (zh) | 2010-06-10 | 2016-04-11 | Asm國際股份有限公司 | 使膜選擇性沈積於基板上的方法 |
EP2545972A1 (de) | 2011-07-13 | 2013-01-16 | Dow Global Technologies LLC | Reinigung organometallischer Verbindungen durch zweistufige Destillation |
JP6054659B2 (ja) | 2011-07-13 | 2016-12-27 | ダウ グローバル テクノロジーズ エルエルシー | 有機金属化合物精製および装置 |
EP2559682B1 (de) | 2011-08-15 | 2016-08-03 | Rohm and Haas Electronic Materials LLC | Organometallische Verbindungszubereitung |
EP2559681B1 (de) | 2011-08-15 | 2016-06-22 | Dow Global Technologies LLC | Organometallische Verbindungszubereitung |
DE102012013941A1 (de) | 2012-07-16 | 2014-01-16 | Umicore Ag & Co. Kg | Verfahren zur Herstellung von Galliumtrialkylverbindungen |
TWI632149B (zh) | 2011-11-28 | 2018-08-11 | 烏明克股份有限兩合公司 | 第iii a族金屬的三烷基化合物之製法 |
US9112003B2 (en) | 2011-12-09 | 2015-08-18 | Asm International N.V. | Selective formation of metallic films on metallic surfaces |
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US10047912B2 (en) | 2013-10-15 | 2018-08-14 | LIFI Labs, Inc. | Lighting assembly |
JP2015082573A (ja) * | 2013-10-22 | 2015-04-27 | 住友電気工業株式会社 | エピタキシャルウエハおよびその製造方法 |
WO2015073890A1 (en) | 2013-11-14 | 2015-05-21 | LIFI Labs, Inc. | Resettable lighting system and method |
US11455884B2 (en) | 2014-09-02 | 2022-09-27 | LIFI Labs, Inc. | Lighting system |
US9895715B2 (en) | 2014-02-04 | 2018-02-20 | Asm Ip Holding B.V. | Selective deposition of metals, metal oxides, and dielectrics |
JP6413801B2 (ja) * | 2014-02-07 | 2018-10-31 | 宇部興産株式会社 | トリアルキルガリウムの製造方法 |
JP2016029026A (ja) * | 2014-02-07 | 2016-03-03 | 宇部興産株式会社 | トリアルキルガリウムの製造方法 |
US10047435B2 (en) | 2014-04-16 | 2018-08-14 | Asm Ip Holding B.V. | Dual selective deposition |
CN106465499B (zh) | 2014-05-22 | 2018-11-30 | 莱弗实验室公司 | 定向照明系统和方法 |
US9816180B2 (en) | 2015-02-03 | 2017-11-14 | Asm Ip Holding B.V. | Selective deposition |
EP3056499B1 (de) * | 2015-02-13 | 2018-04-18 | Umicore AG & Co. KG | Verfahren zur Herstellung von Alkylindium-Verbindungen und deren Verwendung |
CN107406465A (zh) * | 2015-02-17 | 2017-11-28 | Up化学株式会社 | 铝化合物以及利用其形成含铝膜的方法 |
US9490145B2 (en) | 2015-02-23 | 2016-11-08 | Asm Ip Holding B.V. | Removal of surface passivation |
CN104774214B (zh) * | 2015-04-28 | 2016-08-24 | 河南承明光电新材料股份有限公司 | 一种二甲基锌的制备方法 |
US10428421B2 (en) | 2015-08-03 | 2019-10-01 | Asm Ip Holding B.V. | Selective deposition on metal or metallic surfaces relative to dielectric surfaces |
US10566185B2 (en) * | 2015-08-05 | 2020-02-18 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
US10121699B2 (en) | 2015-08-05 | 2018-11-06 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
US10695794B2 (en) | 2015-10-09 | 2020-06-30 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
US10814349B2 (en) | 2015-10-09 | 2020-10-27 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
US10343186B2 (en) | 2015-10-09 | 2019-07-09 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
JP2017110268A (ja) * | 2015-12-17 | 2017-06-22 | 宇部興産株式会社 | 酸化アルミニウム膜の製造原料及び酸化アルミニウム膜の製造方法 |
US9981286B2 (en) | 2016-03-08 | 2018-05-29 | Asm Ip Holding B.V. | Selective formation of metal silicides |
US10204782B2 (en) | 2016-04-18 | 2019-02-12 | Imec Vzw | Combined anneal and selective deposition process |
WO2017184357A1 (en) | 2016-04-18 | 2017-10-26 | Asm Ip Holding B.V. | Method of forming a directed self-assembled layer on a substrate |
US11081342B2 (en) | 2016-05-05 | 2021-08-03 | Asm Ip Holding B.V. | Selective deposition using hydrophobic precursors |
US10453701B2 (en) | 2016-06-01 | 2019-10-22 | Asm Ip Holding B.V. | Deposition of organic films |
US10373820B2 (en) | 2016-06-01 | 2019-08-06 | Asm Ip Holding B.V. | Deposition of organic films |
US9803277B1 (en) | 2016-06-08 | 2017-10-31 | Asm Ip Holding B.V. | Reaction chamber passivation and selective deposition of metallic films |
US10014212B2 (en) | 2016-06-08 | 2018-07-03 | Asm Ip Holding B.V. | Selective deposition of metallic films |
US10440794B2 (en) | 2016-11-02 | 2019-10-08 | LIFI Labs, Inc. | Lighting system and method |
US11430656B2 (en) | 2016-11-29 | 2022-08-30 | Asm Ip Holding B.V. | Deposition of oxide thin films |
JP7169072B2 (ja) | 2017-02-14 | 2022-11-10 | エーエスエム アイピー ホールディング ビー.ブイ. | 選択的パッシベーションおよび選択的堆積 |
US11501965B2 (en) | 2017-05-05 | 2022-11-15 | Asm Ip Holding B.V. | Plasma enhanced deposition processes for controlled formation of metal oxide thin films |
WO2018213018A1 (en) | 2017-05-16 | 2018-11-22 | Asm Ip Holding B.V. | Selective peald of oxide on dielectric |
EP3409676B1 (de) * | 2017-05-29 | 2020-10-14 | Umicore Ag & Co. Kg | Herstellung von trialkylindiumverbindungen in gegenwart von carboxylaten |
US10900120B2 (en) | 2017-07-14 | 2021-01-26 | Asm Ip Holding B.V. | Passivation against vapor deposition |
WO2019086336A1 (en) * | 2017-10-31 | 2019-05-09 | Akzo Nobel Chemicals International B.V. | Method for storing and/or transporting gallium chloride |
WO2019115377A1 (en) | 2017-12-13 | 2019-06-20 | Akzo Nobel Chemicals International B.V. | Process for purification of dimethyl aluminium chloride |
JP7146690B2 (ja) | 2018-05-02 | 2022-10-04 | エーエスエム アイピー ホールディング ビー.ブイ. | 堆積および除去を使用した選択的層形成 |
JP2020056104A (ja) | 2018-10-02 | 2020-04-09 | エーエスエム アイピー ホールディング ビー.ブイ. | 選択的パッシベーションおよび選択的堆積 |
US11965238B2 (en) | 2019-04-12 | 2024-04-23 | Asm Ip Holding B.V. | Selective deposition of metal oxides on metal surfaces |
US11139163B2 (en) | 2019-10-31 | 2021-10-05 | Asm Ip Holding B.V. | Selective deposition of SiOC thin films |
TW202204658A (zh) | 2020-03-30 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 在兩不同表面上同時選擇性沉積兩不同材料 |
TW202140832A (zh) | 2020-03-30 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽在金屬表面上之選擇性沉積 |
TW202140833A (zh) | 2020-03-30 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 相對於金屬表面在介電表面上之氧化矽的選擇性沉積 |
KR20220097266A (ko) * | 2020-12-30 | 2022-07-07 | 에이에스엠 아이피 홀딩 비.브이. | 재료 증착을 위한 조성물, 합성 방법 및 용도 |
CN112778348A (zh) * | 2021-02-04 | 2021-05-11 | 盘锦研峰科技有限公司 | 一种烷基卤化铝的合成方法 |
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DE3567871D1 (en) * | 1984-03-26 | 1989-03-02 | Secr Defence Brit | The preparation of metal alkyls |
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IT1273701B (it) * | 1994-07-29 | 1997-07-09 | Enichem Elastomers | Derivati metallorganici del grupo iiia e procedimento per la loro preparazione |
MY112590A (en) * | 1994-09-02 | 2001-07-31 | Sec Dep For Defence Acting Through His Defence Evaluation And Research Agency United Kingdom | Semi-conductor devices and their production |
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TR199900388T2 (xx) * | 1996-08-26 | 1999-04-21 | Basf Aktiengesellschaft | Yıldız polimerleri ve elde edilmelerine yönelik usul. |
US5663390A (en) * | 1996-08-29 | 1997-09-02 | Libbey-Owens-Ford Co. | Method of producing organo indium chlorides |
WO1998058932A1 (fr) * | 1997-06-24 | 1998-12-30 | Meiji Seika Kaisha, Ltd. | Procede pour l'elaboration selective de z-isomeres de 3-(vinyl substitue en 2) cephalosporines |
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JP2003252878A (ja) * | 2002-01-17 | 2003-09-10 | Shipley Co Llc | 有機インジウム化合物 |
US6770769B2 (en) * | 2002-04-06 | 2004-08-03 | Shipley Company, L.L.C. | Trialkylindium preparation |
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JP4689969B2 (ja) * | 2003-04-05 | 2011-06-01 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | Iva族およびvia族化合物の調製 |
JP4054997B2 (ja) * | 2003-06-19 | 2008-03-05 | 信越化学工業株式会社 | 高純度アルキルガリウムの製造方法 |
-
2005
- 2005-08-30 TW TW94129631A patent/TW200619222A/zh unknown
- 2005-08-31 JP JP2005250826A patent/JP5052774B2/ja not_active Expired - Fee Related
- 2005-09-02 KR KR20050081620A patent/KR101117139B1/ko active IP Right Grant
- 2005-09-02 CN CNB2005100998358A patent/CN100358903C/zh not_active Expired - Fee Related
- 2005-09-02 EP EP05255413A patent/EP1643547B1/de not_active Not-in-force
- 2005-09-02 DE DE602005010804T patent/DE602005010804D1/de active Active
- 2005-09-02 US US11/219,227 patent/US7166734B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TW200619222A (en) | 2006-06-16 |
EP1643547B1 (de) | 2008-11-05 |
KR101117139B1 (ko) | 2012-03-07 |
CN100358903C (zh) | 2008-01-02 |
KR20060050962A (ko) | 2006-05-19 |
JP5052774B2 (ja) | 2012-10-17 |
JP2006104189A (ja) | 2006-04-20 |
CN1746173A (zh) | 2006-03-15 |
EP1643547A1 (de) | 2006-04-05 |
US20060047132A1 (en) | 2006-03-02 |
US7166734B2 (en) | 2007-01-23 |
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