DE60144271D1 - Photovoltaische Vorrichtung - Google Patents
Photovoltaische VorrichtungInfo
- Publication number
- DE60144271D1 DE60144271D1 DE60144271T DE60144271T DE60144271D1 DE 60144271 D1 DE60144271 D1 DE 60144271D1 DE 60144271 T DE60144271 T DE 60144271T DE 60144271 T DE60144271 T DE 60144271T DE 60144271 D1 DE60144271 D1 DE 60144271D1
- Authority
- DE
- Germany
- Prior art keywords
- photovoltaic device
- photovoltaic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000268199A JP3490964B2 (ja) | 2000-09-05 | 2000-09-05 | 光起電力装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60144271D1 true DE60144271D1 (de) | 2011-05-05 |
Family
ID=18755007
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60144271T Expired - Lifetime DE60144271D1 (de) | 2000-09-05 | 2001-09-04 | Photovoltaische Vorrichtung |
Country Status (4)
Country | Link |
---|---|
US (1) | US7030413B2 (de) |
EP (1) | EP1187223B1 (de) |
JP (1) | JP3490964B2 (de) |
DE (1) | DE60144271D1 (de) |
Families Citing this family (88)
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EP1643564B1 (de) * | 2004-09-29 | 2019-01-16 | Panasonic Intellectual Property Management Co., Ltd. | Photovoltaisches Bauelement |
US7755157B2 (en) * | 2005-03-29 | 2010-07-13 | Sanyo Electric Co., Ltd. | Photovoltaic device and manufacturing method of photovoltaic device |
DE102005019225B4 (de) * | 2005-04-20 | 2009-12-31 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Heterokontaktsolarzelle mit invertierter Schichtstrukturgeometrie |
US7375378B2 (en) * | 2005-05-12 | 2008-05-20 | General Electric Company | Surface passivated photovoltaic devices |
US20070023081A1 (en) * | 2005-07-28 | 2007-02-01 | General Electric Company | Compositionally-graded photovoltaic device and fabrication method, and related articles |
US20070023082A1 (en) * | 2005-07-28 | 2007-02-01 | Venkatesan Manivannan | Compositionally-graded back contact photovoltaic devices and methods of fabricating such devices |
US7906723B2 (en) | 2008-04-30 | 2011-03-15 | General Electric Company | Compositionally-graded and structurally-graded photovoltaic devices and methods of fabricating such devices |
US20070137699A1 (en) * | 2005-12-16 | 2007-06-21 | General Electric Company | Solar cell and method for fabricating solar cell |
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US7737357B2 (en) * | 2006-05-04 | 2010-06-15 | Sunpower Corporation | Solar cell having doped semiconductor heterojunction contacts |
US20080000522A1 (en) * | 2006-06-30 | 2008-01-03 | General Electric Company | Photovoltaic device which includes all-back-contact configuration; and related processes |
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JP2614561B2 (ja) | 1991-10-08 | 1997-05-28 | 三洋電機株式会社 | 光起電力素子 |
US5204272A (en) | 1991-12-13 | 1993-04-20 | United Solar Systems Corporation | Semiconductor device and microwave process for its manufacture |
US5419783A (en) * | 1992-03-26 | 1995-05-30 | Sanyo Electric Co., Ltd. | Photovoltaic device and manufacturing method therefor |
JP3203078B2 (ja) | 1992-12-09 | 2001-08-27 | 三洋電機株式会社 | 光起電力素子 |
US5395457A (en) * | 1992-12-16 | 1995-03-07 | Sanyo Electric Co., Ltd. | Photovoltaic device and method of manufacturing the same |
JP3197673B2 (ja) | 1993-04-06 | 2001-08-13 | 三洋電機株式会社 | 光起電力装置 |
JP3197674B2 (ja) | 1993-04-06 | 2001-08-13 | 三洋電機株式会社 | 光起電力装置 |
JP3244369B2 (ja) | 1993-11-19 | 2002-01-07 | 三洋電機株式会社 | ヘテロ接合を有する光起電力装置 |
JPH0864851A (ja) * | 1994-06-14 | 1996-03-08 | Sanyo Electric Co Ltd | 光起電力素子及びその製造方法 |
JP2675754B2 (ja) | 1994-07-08 | 1997-11-12 | 株式会社日立製作所 | 太陽電池 |
US5716480A (en) | 1995-07-13 | 1998-02-10 | Canon Kabushiki Kaisha | Photovoltaic device and method of manufacturing the same |
JP3349308B2 (ja) * | 1995-10-26 | 2002-11-25 | 三洋電機株式会社 | 光起電力素子 |
US6121541A (en) * | 1997-07-28 | 2000-09-19 | Bp Solarex | Monolithic multi-junction solar cells with amorphous silicon and CIS and their alloys |
US6077722A (en) * | 1998-07-14 | 2000-06-20 | Bp Solarex | Producing thin film photovoltaic modules with high integrity interconnects and dual layer contacts |
JP4187328B2 (ja) | 1998-11-16 | 2008-11-26 | 三洋電機株式会社 | 光起電力素子の製造方法 |
-
2000
- 2000-09-05 JP JP2000268199A patent/JP3490964B2/ja not_active Expired - Lifetime
-
2001
- 2001-09-04 DE DE60144271T patent/DE60144271D1/de not_active Expired - Lifetime
- 2001-09-04 EP EP01121182A patent/EP1187223B1/de not_active Expired - Lifetime
- 2001-09-05 US US09/947,317 patent/US7030413B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2002076409A (ja) | 2002-03-15 |
EP1187223A2 (de) | 2002-03-13 |
JP3490964B2 (ja) | 2004-01-26 |
US20020069911A1 (en) | 2002-06-13 |
EP1187223B1 (de) | 2011-03-23 |
US7030413B2 (en) | 2006-04-18 |
EP1187223A3 (de) | 2006-09-06 |
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