DE69926341D1 - Magnetoelektrischer Vorrichtung - Google Patents
Magnetoelektrischer VorrichtungInfo
- Publication number
- DE69926341D1 DE69926341D1 DE69926341T DE69926341T DE69926341D1 DE 69926341 D1 DE69926341 D1 DE 69926341D1 DE 69926341 T DE69926341 T DE 69926341T DE 69926341 T DE69926341 T DE 69926341T DE 69926341 D1 DE69926341 D1 DE 69926341D1
- Authority
- DE
- Germany
- Prior art keywords
- magnetoelectric device
- magnetoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
- H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
- H01F1/0072—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity one dimensional, i.e. linear or dendritic nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Theoretical Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
- Measuring Magnetic Variables (AREA)
- Magnetic Heads (AREA)
- Thin Magnetic Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99303615A EP1052520B1 (de) | 1999-05-10 | 1999-05-10 | Magnetoelektrischer Vorrichtung |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69926341D1 true DE69926341D1 (de) | 2005-09-01 |
DE69926341T2 DE69926341T2 (de) | 2006-01-12 |
Family
ID=8241372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69926341T Expired - Lifetime DE69926341T2 (de) | 1999-05-10 | 1999-05-10 | Magnetoelektrischer Vorrichtung |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1052520B1 (de) |
JP (1) | JP2000323767A (de) |
DE (1) | DE69926341T2 (de) |
ES (1) | ES2245498T3 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002063693A1 (fr) * | 2001-02-08 | 2002-08-15 | Hitachi, Ltd. | Dispositif electronique et source d'electronsavec nanotube de carbone |
DE10133373A1 (de) | 2001-07-10 | 2003-01-30 | Infineon Technologies Ag | Magnetische Speichereinheit und magnetisches Speicherarray |
US6574130B2 (en) | 2001-07-25 | 2003-06-03 | Nantero, Inc. | Hybrid circuit having nanotube electromechanical memory |
US6643165B2 (en) | 2001-07-25 | 2003-11-04 | Nantero, Inc. | Electromechanical memory having cell selection circuitry constructed with nanotube technology |
US6835591B2 (en) | 2001-07-25 | 2004-12-28 | Nantero, Inc. | Methods of nanotube films and articles |
US6706402B2 (en) | 2001-07-25 | 2004-03-16 | Nantero, Inc. | Nanotube films and articles |
US6781801B2 (en) * | 2001-08-10 | 2004-08-24 | Seagate Technology Llc | Tunneling magnetoresistive sensor with spin polarized current injection |
JP2003142755A (ja) | 2001-11-05 | 2003-05-16 | Fujitsu Ltd | 磁気抵抗センサ及びその製造方法 |
US6784028B2 (en) | 2001-12-28 | 2004-08-31 | Nantero, Inc. | Methods of making electromechanical three-trace junction devices |
JP2004146821A (ja) * | 2002-10-03 | 2004-05-20 | Sony Corp | メモリ素子およびメモリ装置 |
JP4966483B2 (ja) * | 2003-06-25 | 2012-07-04 | パナソニック株式会社 | 磁気抵抗効果素子、および磁気抵抗効果素子を用いた磁気ヘッド、記録再生装置、メモリ素子、メモリアレイ、および磁気抵抗効果素子の製造方法 |
WO2005085890A2 (en) * | 2004-03-01 | 2005-09-15 | Cambridge University Technical Services Limited | Magnetoresistive magnetic field sensor |
JP2007531278A (ja) * | 2004-03-22 | 2007-11-01 | ジ・オハイオ・ステート・ユニバーシティ | カーボンナノチューブアレイをベースとするスペーサー層を有するスピントロニックデバイス及び該デバイスの製造方法 |
ITTO20050758A1 (it) * | 2005-10-26 | 2007-04-27 | Fiat Ricerche | Dispositivo di rilevazione di grandezze fisiche in particolare un campo magnetico a film sottile e relativo procedimento di rilevazione |
EP1830410A1 (de) | 2006-02-24 | 2007-09-05 | Hitachi, Ltd. | Ein-Electron Tunnelbauelement |
JP5119436B2 (ja) * | 2006-12-28 | 2013-01-16 | 国立大学法人大阪大学 | 不揮発性メモリセルおよびその製造方法、抵抗可変型不揮発性メモリ装置、並びに不揮発性メモリセルの設計方法 |
JP5251281B2 (ja) | 2008-06-11 | 2013-07-31 | Tdk株式会社 | 磁気センサー |
JP5157676B2 (ja) | 2008-06-25 | 2013-03-06 | Tdk株式会社 | 磁気センサー |
US7902616B2 (en) | 2008-06-30 | 2011-03-08 | Qimonda Ag | Integrated circuit having a magnetic tunnel junction device and method |
US7863700B2 (en) | 2008-06-30 | 2011-01-04 | Qimonda Ag | Magnetoresistive sensor with tunnel barrier and method |
JP2010020826A (ja) | 2008-07-09 | 2010-01-28 | Tdk Corp | 磁気センサー |
US8000065B2 (en) | 2009-01-28 | 2011-08-16 | Tdk Corporation | Magnetoresistive element and thin-film magnetic head |
JP5144569B2 (ja) * | 2009-03-24 | 2013-02-13 | 株式会社東芝 | スピントランジスタ及び論理回路装置 |
JP2011018415A (ja) * | 2009-07-10 | 2011-01-27 | Tdk Corp | 磁気センサ |
WO2019141677A1 (en) * | 2018-01-19 | 2019-07-25 | Weidlich Helmut | Device for guiding charge carriers and use thereof |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5390061A (en) * | 1990-06-08 | 1995-02-14 | Hitachi, Ltd. | Multilayer magnetoresistance effect-type magnetic head |
JP3217703B2 (ja) * | 1995-09-01 | 2001-10-15 | 株式会社東芝 | 磁性体デバイス及びそれを用いた磁気センサ |
WO1998025263A1 (en) * | 1996-12-02 | 1998-06-11 | Koninklijke Philips Electronics N.V. | Lateral magneto-electronic device exploiting a quasi-two-dimensional electron gas |
-
1999
- 1999-05-10 EP EP99303615A patent/EP1052520B1/de not_active Expired - Lifetime
- 1999-05-10 ES ES99303615T patent/ES2245498T3/es not_active Expired - Lifetime
- 1999-05-10 DE DE69926341T patent/DE69926341T2/de not_active Expired - Lifetime
-
2000
- 2000-03-07 JP JP2000062425A patent/JP2000323767A/ja not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP1052520B1 (de) | 2005-07-27 |
JP2000323767A (ja) | 2000-11-24 |
DE69926341T2 (de) | 2006-01-12 |
ES2245498T3 (es) | 2006-01-01 |
EP1052520A1 (de) | 2000-11-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: HITACHI, LTD., TOKYO, JP |