DE60142386D1 - Verfahren und Vorrichtung zur Herstellung eines III-V-Nitridfilms - Google Patents

Verfahren und Vorrichtung zur Herstellung eines III-V-Nitridfilms

Info

Publication number
DE60142386D1
DE60142386D1 DE60142386T DE60142386T DE60142386D1 DE 60142386 D1 DE60142386 D1 DE 60142386D1 DE 60142386 T DE60142386 T DE 60142386T DE 60142386 T DE60142386 T DE 60142386T DE 60142386 D1 DE60142386 D1 DE 60142386D1
Authority
DE
Germany
Prior art keywords
iii
nitride film
reactor
producing
developed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60142386T
Other languages
English (en)
Inventor
Tomohiko Shibata
Yukinori Nakamura
Mitsuhiro Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Application granted granted Critical
Publication of DE60142386D1 publication Critical patent/DE60142386D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60142386T 2000-12-12 2001-12-11 Verfahren und Vorrichtung zur Herstellung eines III-V-Nitridfilms Expired - Lifetime DE60142386D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000377547 2000-12-12
JP2001340945A JP3607664B2 (ja) 2000-12-12 2001-11-06 Ｉｉｉ−ｖ族窒化物膜の製造装置

Publications (1)

Publication Number Publication Date
DE60142386D1 true DE60142386D1 (de) 2010-07-29

Family

ID=26605675

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60142386T Expired - Lifetime DE60142386D1 (de) 2000-12-12 2001-12-11 Verfahren und Vorrichtung zur Herstellung eines III-V-Nitridfilms

Country Status (7)

Country Link
US (2) US6709703B2 (de)
EP (1) EP1215308B1 (de)
JP (1) JP3607664B2 (de)
KR (1) KR100449787B1 (de)
AT (1) ATE471397T1 (de)
DE (1) DE60142386D1 (de)
TW (1) TW518670B (de)

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JP3607664B2 (ja) * 2000-12-12 2005-01-05 日本碍子株式会社 Ｉｉｉ−ｖ族窒化物膜の製造装置
JP2004363456A (ja) 2003-06-06 2004-12-24 Toshiba Corp 半導体装置の製造方法および製造装置
CN100510167C (zh) * 2004-12-30 2009-07-08 中国科学院半导体研究所 金属有机物化学气相沉积设备反应室中的反烘烤沉积结构
CN100344532C (zh) * 2005-03-25 2007-10-24 清华大学 一种碳纳米管阵列的生长装置
JP4554469B2 (ja) * 2005-08-18 2010-09-29 日本碍子株式会社 Ｉｉｉ族窒化物結晶の形成方法、積層体、およびエピタキシャル基板
WO2007023722A1 (ja) * 2005-08-25 2007-03-01 Sumitomo Electric Industries, Ltd. ＧａxＩｎ1-xＮ（０≦ｘ≦１）結晶の製造方法、ＧａxＩｎ1-xＮ（０≦ｘ≦１）結晶基板、ＧａＮ結晶の製造方法、ＧａＮ結晶基板および製品
JP5244814B2 (ja) 2006-11-22 2013-07-24 ソイテック 化学気相成長チャンバ用の温度制御されたパージゲート弁を使用した方法、アセンブリ及びシステム
EP2066496B1 (de) * 2006-11-22 2013-04-10 Soitec Anlage zur massenherstellung von gruppe-iii-v-halbleitermaterialien
US20090320746A1 (en) * 2007-01-31 2009-12-31 Sumitomo Chemical Company, Limited Method for producing group iii-v compound semiconductor
DE102007009145A1 (de) * 2007-02-24 2008-08-28 Aixtron Ag Vorrichtung zum Abscheiden kristalliner Schichten wahlweise mittels MOCVD oder HVPE
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US20090197424A1 (en) * 2008-01-31 2009-08-06 Hitachi Kokusai Electric Inc. Substrate processing apparatus and method for manufacturing semiconductor device
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JP5409413B2 (ja) 2010-01-26 2014-02-05 日本パイオニクス株式会社 Ｉｉｉ族窒化物半導体の気相成長装置
JP2013115313A (ja) * 2011-11-30 2013-06-10 Stanley Electric Co Ltd 結晶成長装置
US8603898B2 (en) 2012-03-30 2013-12-10 Applied Materials, Inc. Method for forming group III/V conformal layers on silicon substrates
JP5940375B2 (ja) * 2012-06-01 2016-06-29 シャープ株式会社 気相成長装置および窒化物半導体発光素子の製造方法
TWI565825B (zh) * 2012-06-07 2017-01-11 索泰克公司 沉積系統之氣體注入組件及相關使用方法
US9941295B2 (en) 2015-06-08 2018-04-10 Sandisk Technologies Llc Method of making a three-dimensional memory device having a heterostructure quantum well channel
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US9721963B1 (en) 2016-04-08 2017-08-01 Sandisk Technologies Llc Three-dimensional memory device having a transition metal dichalcogenide channel
US9818801B1 (en) 2016-10-14 2017-11-14 Sandisk Technologies Llc Resistive three-dimensional memory device with heterostructure semiconductor local bit line and method of making thereof
JP7368845B2 (ja) 2020-03-10 2023-10-25 国立大学法人広島大学 酸化ナトリウムの分解方法

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Also Published As

Publication number Publication date
US20040132298A1 (en) 2004-07-08
JP3607664B2 (ja) 2005-01-05
JP2002246323A (ja) 2002-08-30
EP1215308B1 (de) 2010-06-16
KR100449787B1 (ko) 2004-09-22
ATE471397T1 (de) 2010-07-15
US7955437B2 (en) 2011-06-07
EP1215308A2 (de) 2002-06-19
TW518670B (en) 2003-01-21
KR20020046951A (ko) 2002-06-21
EP1215308A3 (de) 2008-01-23
US6709703B2 (en) 2004-03-23
US20020124965A1 (en) 2002-09-12

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