JP4466723B2 - 有機金属気相成長装置 - Google Patents
有機金属気相成長装置 Download PDFInfo
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- JP4466723B2 JP4466723B2 JP2007301882A JP2007301882A JP4466723B2 JP 4466723 B2 JP4466723 B2 JP 4466723B2 JP 2007301882 A JP2007301882 A JP 2007301882A JP 2007301882 A JP2007301882 A JP 2007301882A JP 4466723 B2 JP4466723 B2 JP 4466723B2
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- 238000000927 vapour-phase epitaxy Methods 0.000 title claims description 4
- 239000000758 substrate Substances 0.000 claims description 95
- 239000012495 reaction gas Substances 0.000 claims description 60
- 238000011144 upstream manufacturing Methods 0.000 claims description 55
- 238000010438 heat treatment Methods 0.000 claims description 16
- 230000007423 decrease Effects 0.000 claims description 15
- 230000003247 decreasing effect Effects 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 125000002524 organometallic group Chemical group 0.000 claims description 7
- 238000001947 vapour-phase growth Methods 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 49
- 238000009826 distribution Methods 0.000 description 39
- 230000000052 comparative effect Effects 0.000 description 35
- 239000004065 semiconductor Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 6
- 239000000376 reactant Substances 0.000 description 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000036632 reaction speed Effects 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45585—Compression of gas before it reaches the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C23C16/45504—Laminar flow
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
Landscapes
- Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
また通路の高さは第3の位置から下流側に向かって第4の位置まで単調減少しており、第4の位置は基板の載置位置の下流側端部、または基板の下流側端部よりも下流側にある。これにより、反応ガスの流れ方向に沿った基板の載置位置と膜の成長速度との関係を線形にすることができる。
(実施の形態1)
図1は、本発明の実施の形態1におけるMOCVD装置の構成を示す断面図である。図2は、図1のサセプタ付近の上面図である。図1および図2を参照して、本実施の形態におけるMOCVD装置1は、チャンバ3と、加熱部材としてのサセプタ5と、ヒータ9と、通路11とを備えている。チャンバ3内にはサセプタ5とヒータ9と通路11とが配置されている。通路11は図1中横方向に延びており、通路11の内部にはサセプタ5の載置面(図1では上面)が面している。
図5は、比較例1および2におけるMOCVD装置の構成を示す断面図である。図5を参照して、始めに本願発明者らは、一点鎖線で示すような通路W1を有するMOCVD装置(比較例1)を準備した。通路W1の上部には傾斜部S101が形成されており、反応ガスGの流れ方向に沿った通路W1の高さは、位置P101から下流側に向かって位置P102まで単調減少(線形に減少)しており、その後、位置P102よりも下流側の領域では一定の高さt6を有している。なお、これ以外のMOCVD装置の構成は、図1に示すMOCVD装置の構成と同様である。
図12は、本発明の実施の形態2におけるMOCVD装置の構成を示す断面図である。図13は、本発明の実施の形態2における反応ガスの流れ方向に沿った位置と通路の高さとの関係を示す図である。図12および図13を参照して、本実施の形態におけるMOCVD装置1aは、通路11の形状が図1に示すMOCVD装置とは異なっている。具体的には、傾斜部S1が、位置A1よりも上流側の位置P0と、位置P2との間に形成されている。このため、反応ガスGの流れ方向に沿った通路11の高さは、位置A2から下流側に向かって位置P2まで単調減少(線形に減少)している。この場合、位置P1および位置A2は同一位置となる。また、位置P2が位置A4よりも下流側にあり、位置P4が位置A5よりも下流側にある。位置P2は位置A4と同一位置にあってもよい。
Claims (5)
- 反応ガスを用いて基板に成膜するための有機金属気相成長装置であって、
前記基板を加熱し、かつ前記基板を載置するための載置面を有する加熱部材と、
前記基板に前記反応ガスを導入するための通路とを備え、
前記通路の内部に前記載置面が面した状態で前記加熱部材は回転可能であり、
前記通路は第1通路と第2通路とを有し、かつ前記第1通路と前記第2通路とは前記載置面の上流側端部よりも上流側において合流しており、
前記反応ガスの流れ方向に沿った前記通路の高さは、第1の位置から下流側に向かって第2の位置まで単調減少しており、かつ前記第2の位置から第3の位置まで一定であり、かつ前記第3の位置から下流側に向かって第4の位置まで単調減少しており、
前記第1の位置は前記載置面における前記基板の載置位置の上流側端部よりも上流側にあり、かつ前記第3の位置は前記加熱部材上にあり、かつ前記第4の位置は前記載置位置の下流側端部、または前記下流側端部よりも下流側にある、有機金属気相成長装置。 - 前記第2の位置は前記載置位置の上流側端部よりも上流側にある、請求項1に記載の有機金属気相成長装置。
- 前記第2の位置は前記載置面の上流側端部よりも上流側にある、請求項2に記載の有機金属気相成長装置。
- 前記第1の位置は前記第1通路と前記第2通路とが合流する位置よりも下流側にある、請求項1〜3のいずれかに記載の有機金属気相成長装置。
- 前記通路は、前記第1の位置と前記第2の位置との間に形成された第1傾斜部と、前記第3の位置から下流側に向かって形成された第2傾斜部とを有し、前記第1傾斜部および前記第2傾斜部は、前記反応ガスの流れ方向に対して傾斜している、請求項1〜4のいずれかに記載の有機金属気相成長装置。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007301882A JP4466723B2 (ja) | 2007-11-21 | 2007-11-21 | 有機金属気相成長装置 |
KR1020080101149A KR101026446B1 (ko) | 2007-11-21 | 2008-10-15 | 유기 금속 기상 성장 장치 |
TW097143236A TWI378526B (en) | 2007-11-21 | 2008-11-07 | Metalorganic chemical vapor deposition reactor |
EP08019531A EP2062996A3 (en) | 2007-11-21 | 2008-11-07 | Metalorganic chemical vapor deposition reactor |
US12/270,867 US8920565B2 (en) | 2007-11-21 | 2008-11-14 | Metalorganic chemical vapor deposition reactor |
CN2008101779224A CN101440479B (zh) | 2007-11-21 | 2008-11-21 | 有机金属化学气相沉积反应器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007301882A JP4466723B2 (ja) | 2007-11-21 | 2007-11-21 | 有機金属気相成長装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009130043A JP2009130043A (ja) | 2009-06-11 |
JP4466723B2 true JP4466723B2 (ja) | 2010-05-26 |
Family
ID=40490996
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007301882A Active JP4466723B2 (ja) | 2007-11-21 | 2007-11-21 | 有機金属気相成長装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8920565B2 (ja) |
EP (1) | EP2062996A3 (ja) |
JP (1) | JP4466723B2 (ja) |
KR (1) | KR101026446B1 (ja) |
CN (1) | CN101440479B (ja) |
TW (1) | TWI378526B (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011138896A (ja) * | 2009-12-28 | 2011-07-14 | Sumitomo Electric Ind Ltd | エピタキシャル膜および発光素子 |
CN102242353A (zh) * | 2010-05-14 | 2011-11-16 | 佛山市奇明光电有限公司 | 有机金属化学气相沉积机台 |
CN102242352A (zh) * | 2010-05-14 | 2011-11-16 | 佛山市奇明光电有限公司 | 有机金属化学气相沉积机台 |
JP5954202B2 (ja) * | 2013-01-29 | 2016-07-20 | 東京エレクトロン株式会社 | 成膜装置 |
US11032945B2 (en) * | 2019-07-12 | 2021-06-08 | Applied Materials, Inc. | Heat shield assembly for an epitaxy chamber |
JP7432465B2 (ja) | 2020-07-31 | 2024-02-16 | 大陽日酸株式会社 | 気相成長装置 |
KR102564228B1 (ko) * | 2021-04-29 | 2023-08-09 | 주식회사 테스 | 유기금속화학기상증착장치 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3816166A (en) * | 1970-03-11 | 1974-06-11 | Philips Corp | Vapor depositing method |
NL7003431A (ja) * | 1970-03-11 | 1971-09-14 | ||
DE3721636A1 (de) * | 1987-06-30 | 1989-01-12 | Aixtron Gmbh | Quarzglasreaktor fuer mocvd-anlagen |
JP2818776B2 (ja) | 1989-04-29 | 1998-10-30 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体の気相成長装置 |
JP2733518B2 (ja) | 1989-04-29 | 1998-03-30 | 豊田合成株式会社 | 化合物半導体膜の気相成長装置 |
JP3131005B2 (ja) * | 1992-03-06 | 2001-01-31 | パイオニア株式会社 | 化合物半導体気相成長装置 |
US6214116B1 (en) * | 1998-01-17 | 2001-04-10 | Hanvac Corporation | Horizontal reactor for compound semiconductor growth |
JP3607664B2 (ja) * | 2000-12-12 | 2005-01-05 | 日本碍子株式会社 | Iii−v族窒化物膜の製造装置 |
JP2002261021A (ja) | 2001-02-28 | 2002-09-13 | Japan Pionics Co Ltd | 気相成長装置及び気相成長方法 |
JP2004063555A (ja) * | 2002-07-25 | 2004-02-26 | Matsushita Electric Ind Co Ltd | 半導体の製造装置及びその製造方法 |
JP4410009B2 (ja) | 2004-03-26 | 2010-02-03 | 高千穂商事株式会社 | Cvd反応炉 |
JP4341647B2 (ja) * | 2006-06-16 | 2009-10-07 | ソニー株式会社 | 化学気相成長装置 |
-
2007
- 2007-11-21 JP JP2007301882A patent/JP4466723B2/ja active Active
-
2008
- 2008-10-15 KR KR1020080101149A patent/KR101026446B1/ko not_active IP Right Cessation
- 2008-11-07 EP EP08019531A patent/EP2062996A3/en not_active Withdrawn
- 2008-11-07 TW TW097143236A patent/TWI378526B/zh not_active IP Right Cessation
- 2008-11-14 US US12/270,867 patent/US8920565B2/en active Active
- 2008-11-21 CN CN2008101779224A patent/CN101440479B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR20090052798A (ko) | 2009-05-26 |
EP2062996A3 (en) | 2010-08-11 |
JP2009130043A (ja) | 2009-06-11 |
CN101440479B (zh) | 2012-01-18 |
TWI378526B (en) | 2012-12-01 |
US20090126635A1 (en) | 2009-05-21 |
KR101026446B1 (ko) | 2011-04-07 |
US8920565B2 (en) | 2014-12-30 |
TW200931571A (en) | 2009-07-16 |
EP2062996A2 (en) | 2009-05-27 |
CN101440479A (zh) | 2009-05-27 |
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