NL7003431A - - Google Patents

Info

Publication number
NL7003431A
NL7003431A NL7003431A NL7003431A NL7003431A NL 7003431 A NL7003431 A NL 7003431A NL 7003431 A NL7003431 A NL 7003431A NL 7003431 A NL7003431 A NL 7003431A NL 7003431 A NL7003431 A NL 7003431A
Authority
NL
Netherlands
Application number
NL7003431A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL7003431A priority Critical patent/NL7003431A/xx
Priority to DE2110289A priority patent/DE2110289C3/de
Priority to US00120983A priority patent/US3750620A/en
Priority to SE02926/71A priority patent/SE368724B/xx
Priority to CH336071A priority patent/CH532960A/de
Priority to AT195971A priority patent/AT321994B/de
Priority to CA107073A priority patent/CA923635A/en
Priority to BE764013A priority patent/BE764013A/xx
Priority to JP1223771A priority patent/JPS5317862B1/ja
Priority to FR7108288A priority patent/FR2084428A5/fr
Priority to GB2337671*A priority patent/GB1346938A/en
Publication of NL7003431A publication Critical patent/NL7003431A/xx
Priority to US00360670A priority patent/US3816166A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45585—Compression of gas before it reaches the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
NL7003431A 1970-03-11 1970-03-11 NL7003431A (ja)

Priority Applications (12)

Application Number Priority Date Filing Date Title
NL7003431A NL7003431A (ja) 1970-03-11 1970-03-11
DE2110289A DE2110289C3 (de) 1970-03-11 1971-03-04 Verfahren zum Niederschlagen von Halbleitermaterial und Vorrichtung zu seiner Durchführung
US00120983A US3750620A (en) 1970-03-11 1971-03-04 Vapor deposition reactor
AT195971A AT321994B (de) 1970-03-11 1971-03-08 Reaktor und verfahren zur herstellung einer halbleiteranordnung in diesem reaktor
CH336071A CH532960A (de) 1970-03-11 1971-03-08 Reaktor zum Durchführen eines Vorganges, bei dem ein Gasstrom und mindestens ein Substrat verwendet werden, und Verfahren zum Betrieb dieses Reaktors
SE02926/71A SE368724B (ja) 1970-03-11 1971-03-08
CA107073A CA923635A (en) 1970-03-11 1971-03-08 Reactor and method of manufacturing a semiconductor device with the aid of said reactor
BE764013A BE764013A (fr) 1970-03-11 1971-03-09 Reacteur et procede de fabrication d'un dispositif semiconducteur a l'aide de ce reacteur
JP1223771A JPS5317862B1 (ja) 1970-03-11 1971-03-09
FR7108288A FR2084428A5 (ja) 1970-03-11 1971-03-10
GB2337671*A GB1346938A (en) 1970-03-11 1971-04-19 Reactors and method of manufacture of semiconductor devices using such a reactor
US00360670A US3816166A (en) 1970-03-11 1973-05-16 Vapor depositing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7003431A NL7003431A (ja) 1970-03-11 1970-03-11

Publications (1)

Publication Number Publication Date
NL7003431A true NL7003431A (ja) 1971-09-14

Family

ID=19809548

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7003431A NL7003431A (ja) 1970-03-11 1970-03-11

Country Status (11)

Country Link
US (1) US3750620A (ja)
JP (1) JPS5317862B1 (ja)
AT (1) AT321994B (ja)
BE (1) BE764013A (ja)
CA (1) CA923635A (ja)
CH (1) CH532960A (ja)
DE (1) DE2110289C3 (ja)
FR (1) FR2084428A5 (ja)
GB (1) GB1346938A (ja)
NL (1) NL7003431A (ja)
SE (1) SE368724B (ja)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5242075A (en) * 1975-09-29 1977-04-01 Nippon Denso Co Ltd Device for controlling gas atmosphere in semiconductor producing equip ment
GB1524326A (en) * 1976-04-13 1978-09-13 Bfg Glassgroup Coating of glass
JPS5944771B2 (ja) * 1979-03-29 1984-11-01 テルサ−ムコ株式会社 半導体熱処理炉
JPS5942970B2 (ja) * 1979-03-29 1984-10-18 テルサ−ムコ株式会社 半導体熱処理用反応管
JPS5923464B2 (ja) * 1979-04-18 1984-06-02 テルサ−ムコ株式会社 半導体熱処理装置
US4325319A (en) * 1980-01-18 1982-04-20 Caterpillar Tractor Co. Air flow system for the charging conductor in an electrostatic painting system
US4834022A (en) * 1985-11-08 1989-05-30 Focus Semiconductor Systems, Inc. CVD reactor and gas injection system
US4976996A (en) * 1987-02-17 1990-12-11 Lam Research Corporation Chemical vapor deposition reactor and method of use thereof
FR2612946B1 (fr) * 1987-03-27 1993-02-19 Chimie Metal Procede et installation pour le depot chimique de revetements ultradurs a temperature moderee
US5221556A (en) * 1987-06-24 1993-06-22 Epsilon Technology, Inc. Gas injectors for reaction chambers in CVD systems
DE3721636A1 (de) * 1987-06-30 1989-01-12 Aixtron Gmbh Quarzglasreaktor fuer mocvd-anlagen
DE3884810T2 (de) * 1988-06-22 1994-05-05 Advanced Semiconductor Mat Gaseinspritzvorrichtung für reaktoren für den chemischen dampfniederschlag.
US4993358A (en) * 1989-07-28 1991-02-19 Watkins-Johnson Company Chemical vapor deposition reactor and method of operation
US6090211A (en) * 1996-03-27 2000-07-18 Matsushita Electric Industrial Co., Ltd. Apparatus and method for forming semiconductor thin layer
US6214116B1 (en) * 1998-01-17 2001-04-10 Hanvac Corporation Horizontal reactor for compound semiconductor growth
SE9801190D0 (sv) * 1998-04-06 1998-04-06 Abb Research Ltd A method and a device for epitaxial growth of objects by Chemical Vapour Deposition
TW544775B (en) * 2001-02-28 2003-08-01 Japan Pionics Chemical vapor deposition apparatus and chemical vapor deposition method
US6626997B2 (en) 2001-05-17 2003-09-30 Nathan P. Shapiro Continuous processing chamber
JP4192148B2 (ja) * 2002-06-10 2008-12-03 東京エレクトロン株式会社 原子層堆積法処理装置
US8124170B1 (en) * 2004-01-23 2012-02-28 Metal Oxide Technologies, Inc Method for forming superconductor material on a tape substrate
WO2005124859A2 (en) * 2004-06-10 2005-12-29 Avansys, Inc. Methods and apparatuses for depositing uniform layers
US7396415B2 (en) * 2005-06-02 2008-07-08 Asm America, Inc. Apparatus and methods for isolating chemical vapor reactions at a substrate surface
JP4466723B2 (ja) * 2007-11-21 2010-05-26 住友電気工業株式会社 有機金属気相成長装置
US8628616B2 (en) 2007-12-11 2014-01-14 Sumitomo Electric Industries, Ltd. Vapor-phase process apparatus, vapor-phase process method, and substrate
JP5954202B2 (ja) * 2013-01-29 2016-07-20 東京エレクトロン株式会社 成膜装置
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3484311A (en) * 1966-06-21 1969-12-16 Union Carbide Corp Silicon deposition process
US3367304A (en) * 1967-03-13 1968-02-06 Dow Corning Deposition chamber for manufacture of refractory coated filaments
US3511727A (en) * 1967-05-08 1970-05-12 Motorola Inc Vapor phase etching and polishing of semiconductors

Also Published As

Publication number Publication date
CA923635A (en) 1973-03-27
BE764013A (fr) 1971-09-09
SE368724B (ja) 1974-07-15
CH532960A (de) 1973-01-31
AT321994B (de) 1975-04-25
GB1346938A (en) 1974-02-13
DE2110289C3 (de) 1980-10-30
FR2084428A5 (ja) 1971-12-17
DE2110289A1 (de) 1971-09-23
DE2110289B2 (de) 1980-03-13
US3750620A (en) 1973-08-07
JPS5317862B1 (ja) 1978-06-12

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