ES2078999T3 - Peliculas de diamante monocristalino epitaxial isotopicamente puro y su preparacion. - Google Patents

Peliculas de diamante monocristalino epitaxial isotopicamente puro y su preparacion.

Info

Publication number
ES2078999T3
ES2078999T3 ES91110503T ES91110503T ES2078999T3 ES 2078999 T3 ES2078999 T3 ES 2078999T3 ES 91110503 T ES91110503 T ES 91110503T ES 91110503 T ES91110503 T ES 91110503T ES 2078999 T3 ES2078999 T3 ES 2078999T3
Authority
ES
Spain
Prior art keywords
isotopically
pure
diamond
single crystal
carbon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91110503T
Other languages
English (en)
Inventor
William Frank Banholzer
Thomas Richard Anthony
Dennis Mark Williams
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Application granted granted Critical
Publication of ES2078999T3 publication Critical patent/ES2078999T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
    • C03B29/04—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

ESTA INVENCION ESTA DIRIGIDA A LA PRODUCCION DE UN DIAMANTE DE UN SOLO CRISTAL COMPUESTO DE CARBONO-12 O CARBONO-13 ISOTOPICAMENTE PURO. SE CREE QUE EL PRODUCTO ES IGUAL QUE UN DIAMANTE EN LA SERIE DE APLICACION 448.469 PERO ESTA HECHO POR UN METODO DIFERENTE. EN ESTA INVENCION, SE HACE CRECER UN CRISTAL UNICO ISOTOPICAMENTE PURO DE DIAMANTE EN UN SUSTRATO DE CRISTAL UNICO DIRECTAMENTE DEL CARBONO-12 O CARBONO-14 ISOTOPICAMENTE PURO. UN METODO PARA FORMAR DIAMANTE ISOTOPICAMENTE PURO DE UN SOLO CRISTAL COMPRENDE LAS FASES DE EMPLAZAR EN UNA CAMARA DE REACCION UN SUSTRATO CRISTALINO CALENTANDOLO A UNA TEMPERATURA ELEVADA DE FORMACION DE DIAMANTE CVD. SE INTRODUCE EN LA CAMARA UNA MEZCLA GASEOSA DE HIDROGENO E HIDROCARBURO DE CARBONO-12 Y CARBONO-13 ISOTOPICAMENTE PURO. LA MEZCLA GASEOSA ES PARCIALMENTE DESCOMPUESTA EN LA CAMARA PARA FORMAR UNA CAPA DE DIAMANTE DE UN SOLO CRISTAL ISOTOPICAMENTE PURO SOBRE EL SUSTRATO DEPOSITADO ANTERIORMENTE. LA CAPA DE SUSTRATO CRISTALINO DE DIAMANTE ISOTOPICAMENTE PURO ASI FORMADO PUEDE SER EXTRAIDO DEL SUSTRATO CRISTALINO. OTRO METODO PARA FORMAR DIAMANTE DE CRISTAL UNICO ISOTOPICAMENTE PURO COMPRENDE LA DIFUSION DE CARBONO-12 O CARBONO-13 ISOTOPICAMENTE PURO A TRAVES DE UN CATALIZADOR/SOLVENTE METALICO BAJO ALTA PRESION A UNA REGION QUE CONTIENE UN SUSTRATO DE CRISTAL UNICO PARA FORMAR DIAMANTE DE CRISTAL UNICO ISOTOPICAMENTE PURO SOBRE DICHO SUSTRATO . EL SUSTRATO DE CRISTAL UNICO ES ESTABLE BAJO ALTA PRESION Y TEMPERATURA UTILIZADO DURANTE EL PROCESO DE DIFUSION. EL SUSTRATO DE CRISTAL UNICO PUEDE OPCIONALMENTE SER DE DIAMANTE, INCLUYENDO EL FILM DE DIAMANTE DE CRISTAL UNICO ISOTOPICAMENTE PURO FORMADO POR EL METODO DE ESTA INVENCION, FORMANDOSE, DE ESTA MANERA, ESTRUCTURAS MULTICAPAS DE DIAMANTE .
ES91110503T 1990-07-02 1991-06-25 Peliculas de diamante monocristalino epitaxial isotopicamente puro y su preparacion. Expired - Lifetime ES2078999T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/547,651 US5360479A (en) 1990-07-02 1990-07-02 Isotopically pure single crystal epitaxial diamond films and their preparation

Publications (1)

Publication Number Publication Date
ES2078999T3 true ES2078999T3 (es) 1996-01-01

Family

ID=24185551

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91110503T Expired - Lifetime ES2078999T3 (es) 1990-07-02 1991-06-25 Peliculas de diamante monocristalino epitaxial isotopicamente puro y su preparacion.

Country Status (13)

Country Link
US (1) US5360479A (es)
EP (1) EP0464611B1 (es)
JP (1) JPH04270193A (es)
KR (1) KR920002479A (es)
CN (1) CN1057869A (es)
AT (1) ATE128493T1 (es)
AU (1) AU642744B2 (es)
BR (1) BR9102763A (es)
CA (1) CA2042268A1 (es)
DE (1) DE69113335T2 (es)
ES (1) ES2078999T3 (es)
IE (1) IE912296A1 (es)
ZA (1) ZA914629B (es)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4027580A1 (de) * 1990-08-31 1992-03-05 Lux Benno Verbundkoerper, verfahren zu dessen herstellung und dessen verwendung
CA2076087A1 (en) * 1991-09-03 1993-03-04 Jerome J. Tiemann Isotopic diamond coated products and their production
JPH05270987A (ja) * 1992-03-27 1993-10-19 Kanagawa Pref Gov 炭素１３同位体ダイヤモンド基板とその製造法
US5503104A (en) * 1995-03-27 1996-04-02 General Electric Company Synthetic diamond product
US5634370A (en) * 1995-07-07 1997-06-03 General Electric Company Composite diamond wire die
US5636545A (en) * 1995-07-07 1997-06-10 General Electric Company Composite diamond wire die
US5634369A (en) * 1995-07-07 1997-06-03 General Electric Company Composite diamond wire die
EP0867536A1 (en) * 1997-03-24 1998-09-30 General Electric Company Low-cost isotopically engineered diamond amvils
EP0867537A1 (en) * 1997-03-24 1998-09-30 General Electric Company Method for the production of low-cost isotopically engineered diamond anvils
US8591856B2 (en) * 1998-05-15 2013-11-26 SCIO Diamond Technology Corporation Single crystal diamond electrochemical electrode
US6582513B1 (en) 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
US6858080B2 (en) * 1998-05-15 2005-02-22 Apollo Diamond, Inc. Tunable CVD diamond structures
EP1632590B1 (en) * 2000-06-15 2017-01-11 Element Six Technologies Limited Thick single crystal diamond layer, method for making it, and gemstones produced from the layer
AU2001281404B2 (en) 2001-08-08 2008-07-03 Apollo Diamond, Inc. System and method for producing synthetic diamond
GB0221949D0 (en) 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
WO2005080645A2 (en) * 2004-02-13 2005-09-01 Apollo Diamond, Inc. Diamond structure separation
US20060163584A1 (en) * 2005-01-26 2006-07-27 Robert Linares Boron-doped diamond semiconductor
JP5263893B2 (ja) * 2007-10-03 2013-08-14 独立行政法人産業技術総合研究所 同位体ダイヤモンド積層体
US7972444B2 (en) * 2007-11-07 2011-07-05 Mattson Technology, Inc. Workpiece support with fluid zones for temperature control
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
GB0813490D0 (en) * 2008-07-23 2008-08-27 Element Six Ltd Solid state material
WO2014081654A1 (en) * 2012-11-21 2014-05-30 National Oilwell DHT, L.P. Fixed cutter drill bit cutter elements including hard cutting tables made from cvd synthetic diamonds
CN104911702B (zh) * 2015-04-29 2017-07-28 西安交通大学 基于自组装工艺的高质量单晶金刚石生长方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3895313A (en) * 1973-09-17 1975-07-15 Entropy Conversion Laser systems with diamond optical elements
US4434188A (en) * 1981-12-17 1984-02-28 National Institute For Researches In Inorganic Materials Method for synthesizing diamond
JPS60118694A (ja) * 1983-11-29 1985-06-26 Mitsubishi Metal Corp ダイヤモンドの低圧合成法
CH664768A5 (de) * 1985-06-20 1988-03-31 Balzers Hochvakuum Verfahren zur beschichtung von substraten in einer vakuumkammer.
EP0206820A3 (en) * 1985-06-27 1987-10-28 De Beers Industrial Diamond Division (Proprietary) Limited Diamond synthesis
US4816286A (en) * 1985-11-25 1989-03-28 Showa Denko Kabushiki Kaisha Process for synthesis of diamond by CVD
GB8903793D0 (en) * 1989-02-20 1989-04-05 Plessey Co Plc Diamond synthesis
AU634601B2 (en) * 1989-12-11 1993-02-25 General Electric Company Single-crystal diamond of very high thermal conductivity

Also Published As

Publication number Publication date
ZA914629B (en) 1992-06-24
BR9102763A (pt) 1992-02-04
EP0464611A1 (en) 1992-01-08
AU642744B2 (en) 1993-10-28
JPH04270193A (ja) 1992-09-25
KR920002479A (ko) 1992-02-28
CN1057869A (zh) 1992-01-15
ATE128493T1 (de) 1995-10-15
EP0464611B1 (en) 1995-09-27
IE912296A1 (en) 1992-01-15
DE69113335D1 (de) 1995-11-02
CA2042268A1 (en) 1992-01-03
AU7917991A (en) 1992-01-02
DE69113335T2 (de) 1996-04-18
US5360479A (en) 1994-11-01

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