ATE128493T1 - Mit nur einem isotop versehene epitaktische einkristalldiamantfilme und ihre herstellung. - Google Patents

Mit nur einem isotop versehene epitaktische einkristalldiamantfilme und ihre herstellung.

Info

Publication number
ATE128493T1
ATE128493T1 AT91110503T AT91110503T ATE128493T1 AT E128493 T1 ATE128493 T1 AT E128493T1 AT 91110503 T AT91110503 T AT 91110503T AT 91110503 T AT91110503 T AT 91110503T AT E128493 T1 ATE128493 T1 AT E128493T1
Authority
AT
Austria
Prior art keywords
isotopically
pure
single crystal
diamond
carbon
Prior art date
Application number
AT91110503T
Other languages
English (en)
Inventor
William Frank Banholzer
Thomas Richard Anthony
Dennis Mark Williams
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gen Electric filed Critical Gen Electric
Application granted granted Critical
Publication of ATE128493T1 publication Critical patent/ATE128493T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
    • C03B29/04—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a continuous way
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2203/00—Processes utilising sub- or super atmospheric pressure
    • B01J2203/06—High pressure synthesis
    • B01J2203/065—Composition of the material produced
    • B01J2203/0655—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
AT91110503T 1990-07-02 1991-06-25 Mit nur einem isotop versehene epitaktische einkristalldiamantfilme und ihre herstellung. ATE128493T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/547,651 US5360479A (en) 1990-07-02 1990-07-02 Isotopically pure single crystal epitaxial diamond films and their preparation

Publications (1)

Publication Number Publication Date
ATE128493T1 true ATE128493T1 (de) 1995-10-15

Family

ID=24185551

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91110503T ATE128493T1 (de) 1990-07-02 1991-06-25 Mit nur einem isotop versehene epitaktische einkristalldiamantfilme und ihre herstellung.

Country Status (13)

Country Link
US (1) US5360479A (de)
EP (1) EP0464611B1 (de)
JP (1) JPH04270193A (de)
KR (1) KR920002479A (de)
CN (1) CN1057869A (de)
AT (1) ATE128493T1 (de)
AU (1) AU642744B2 (de)
BR (1) BR9102763A (de)
CA (1) CA2042268A1 (de)
DE (1) DE69113335T2 (de)
ES (1) ES2078999T3 (de)
IE (1) IE912296A1 (de)
ZA (1) ZA914629B (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4027580A1 (de) * 1990-08-31 1992-03-05 Lux Benno Verbundkoerper, verfahren zu dessen herstellung und dessen verwendung
CA2076087A1 (en) * 1991-09-03 1993-03-04 Jerome J. Tiemann Isotopic diamond coated products and their production
JPH05270987A (ja) * 1992-03-27 1993-10-19 Kanagawa Pref Gov 炭素１３同位体ダイヤモンド基板とその製造法
US5503104A (en) * 1995-03-27 1996-04-02 General Electric Company Synthetic diamond product
US5636545A (en) * 1995-07-07 1997-06-10 General Electric Company Composite diamond wire die
US5634370A (en) * 1995-07-07 1997-06-03 General Electric Company Composite diamond wire die
US5634369A (en) * 1995-07-07 1997-06-03 General Electric Company Composite diamond wire die
EP0867536A1 (de) * 1997-03-24 1998-09-30 General Electric Company Preiswert Isotop hergestellte Diamantambosse
EP0867537A1 (de) * 1997-03-24 1998-09-30 General Electric Company Verfahren zum Herstellen preiswerter isotop hergestellter Diamantambossen
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
US8591856B2 (en) * 1998-05-15 2013-11-26 SCIO Diamond Technology Corporation Single crystal diamond electrochemical electrode
US6858080B2 (en) * 1998-05-15 2005-02-22 Apollo Diamond, Inc. Tunable CVD diamond structures
CA2412855C (en) * 2000-06-15 2009-10-20 Element Six (Pty) Ltd. Thick single crystal diamond layer method for making it and gemstones produced from the layer
EP1415022A1 (de) * 2001-08-08 2004-05-06 Apollo Diamond, Inc. Verfahren und anlage zur herstellung von synthetischen diamant
GB0221949D0 (en) * 2002-09-20 2002-10-30 Diamanx Products Ltd Single crystal diamond
WO2005080645A2 (en) * 2004-02-13 2005-09-01 Apollo Diamond, Inc. Diamond structure separation
US20060163584A1 (en) * 2005-01-26 2006-07-27 Robert Linares Boron-doped diamond semiconductor
WO2009044882A1 (ja) * 2007-10-03 2009-04-09 National Institute Of Advanced Industrial Science And Technology 同位体ダイヤモンド積層体
US7972444B2 (en) * 2007-11-07 2011-07-05 Mattson Technology, Inc. Workpiece support with fluid zones for temperature control
GB0813491D0 (en) 2008-07-23 2008-08-27 Element Six Ltd Diamond Material
GB0813490D0 (en) * 2008-07-23 2008-08-27 Element Six Ltd Solid state material
GB2526940A (en) * 2012-11-21 2015-12-09 Nat Oilwell Dht Lp Fixed cutter drill bit cutter elements including hard cutting tables made from CVD synthetic diamonds
CN104911702B (zh) * 2015-04-29 2017-07-28 西安交通大学 基于自组装工艺的高质量单晶金刚石生长方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3895313A (en) * 1973-09-17 1975-07-15 Entropy Conversion Laser systems with diamond optical elements
US4434188A (en) * 1981-12-17 1984-02-28 National Institute For Researches In Inorganic Materials Method for synthesizing diamond
JPS60118694A (ja) * 1983-11-29 1985-06-26 Mitsubishi Metal Corp ダイヤモンドの低圧合成法
CH664768A5 (de) * 1985-06-20 1988-03-31 Balzers Hochvakuum Verfahren zur beschichtung von substraten in einer vakuumkammer.
EP0206820A3 (de) * 1985-06-27 1987-10-28 De Beers Industrial Diamond Division (Proprietary) Limited Diamantsyntheseverfahren
US4816286A (en) * 1985-11-25 1989-03-28 Showa Denko Kabushiki Kaisha Process for synthesis of diamond by CVD
GB8903793D0 (en) * 1989-02-20 1989-04-05 Plessey Co Plc Diamond synthesis
AU634601B2 (en) * 1989-12-11 1993-02-25 General Electric Company Single-crystal diamond of very high thermal conductivity

Also Published As

Publication number Publication date
AU642744B2 (en) 1993-10-28
AU7917991A (en) 1992-01-02
EP0464611A1 (de) 1992-01-08
CN1057869A (zh) 1992-01-15
CA2042268A1 (en) 1992-01-03
DE69113335D1 (de) 1995-11-02
IE912296A1 (en) 1992-01-15
JPH04270193A (ja) 1992-09-25
ES2078999T3 (es) 1996-01-01
EP0464611B1 (de) 1995-09-27
ZA914629B (en) 1992-06-24
KR920002479A (ko) 1992-02-28
DE69113335T2 (de) 1996-04-18
US5360479A (en) 1994-11-01
BR9102763A (pt) 1992-02-04

Similar Documents

Publication Publication Date Title
ATE128493T1 (de) Mit nur einem isotop versehene epitaktische einkristalldiamantfilme und ihre herstellung.
Akkerman et al. Thermal stability of diamondlike carbon films
ES457596A1 (es) Aparato para la formacion de recubrimientos metalicos o de compuesto metalico sobre una cara de un sustrato de vidrio.
ATE130876T1 (de) Durchsichtige diamantschichten und verfahren zu ihrer herstellung.
ATE224228T1 (de) Sinterverfahren für diamanten und diamant- züchtung
ATE115334T1 (de) Polykristallines cvd-diamantsubstrat für epitaktisches aufwachsen von einkristallhalbleitern.
DE60142386D1 (de) Verfahren und Vorrichtung zur Herstellung eines III-V-Nitridfilms
KR930013220A (ko) 수소화물-형성 금속 기재상에서의 cvd 다이아몬드 성장
DE3784541T2 (de) Verfahren zur Herstellung einer niedergeschlagenen Schicht.
ATE50758T1 (de) Verfahren zur herstellung von glas- oder keramischen koerpern.
FI854624A0 (fi) Framstaellningsfoerfarande foer reaktionsprodukter av cyanvaete.
DE69506279D1 (de) Verfahren und vorrichtung zur herstellung von keramischen gegenständen
PT95436A (pt) Processo de producao de uma pelicula depositada e de producao de um dispositivo semicondutor
JPH0388324A (ja) 化合物半導体薄膜の形成方法
JPS61132595A (ja) 有機金属熱分解気相結晶成長装置
RU96109312A (ru) Способ получения пленки диоксида кремния на подложке
JPH01259524A (ja) 化合物半導体の気相成長方法
JPH01246196A (ja) ダイヤモンド膜の製造方法
JPS60221393A (ja) ＧａＡｓ単結晶の製造方法
KR920012536A (ko) 대칭적인 cvd 다이아몬드 제품 및 그의 제조방법
JPS60167317A (ja) 光励起化学的気相成長装置
DE3761089D1 (de) Verfahren zur herstellung von methan in gegenwart eines schwefelbestaendigen katalysators und bei diesem verfahren zu verwendender katalysator.
JPS62139319A (ja) 化合物半導体結晶成長方法
JPS6481314A (en) Formation of doping silicon thin film
JPS60112693A (ja) 気相成長装置