ATE178102T1 - Durchsichtige diamantschichten und verfahren zu ihrer herstellung - Google Patents

Durchsichtige diamantschichten und verfahren zu ihrer herstellung

Info

Publication number
ATE178102T1
ATE178102T1 AT95201231T AT95201231T ATE178102T1 AT E178102 T1 ATE178102 T1 AT E178102T1 AT 95201231 T AT95201231 T AT 95201231T AT 95201231 T AT95201231 T AT 95201231T AT E178102 T1 ATE178102 T1 AT E178102T1
Authority
AT
Austria
Prior art keywords
production
diamond layers
substantially transparent
transparent diamond
diamond film
Prior art date
Application number
AT95201231T
Other languages
English (en)
Inventor
Thomas Richard Anthony
James Fleischer
Original Assignee
Gen Electric
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23610962&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE178102(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Gen Electric filed Critical Gen Electric
Application granted granted Critical
Publication of ATE178102T1 publication Critical patent/ATE178102T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/25—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/271—Diamond only using hot filaments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/279—Diamond only control of diamond crystallography
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/938—Vapor deposition or gas diffusion

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geology (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
AT95201231T 1989-09-14 1990-08-22 Durchsichtige diamantschichten und verfahren zu ihrer herstellung ATE178102T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/407,179 US5110579A (en) 1989-09-14 1989-09-14 Transparent diamond films and method for making

Publications (1)

Publication Number Publication Date
ATE178102T1 true ATE178102T1 (de) 1999-04-15

Family

ID=23610962

Family Applications (2)

Application Number Title Priority Date Filing Date
AT95201231T ATE178102T1 (de) 1989-09-14 1990-08-22 Durchsichtige diamantschichten und verfahren zu ihrer herstellung
AT90116058T ATE130876T1 (de) 1989-09-14 1990-08-22 Durchsichtige diamantschichten und verfahren zu ihrer herstellung.

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT90116058T ATE130876T1 (de) 1989-09-14 1990-08-22 Durchsichtige diamantschichten und verfahren zu ihrer herstellung.

Country Status (8)

Country Link
US (1) US5110579A (de)
EP (2) EP0676484B1 (de)
JP (2) JP3176614B2 (de)
KR (2) KR970005187B1 (de)
AT (2) ATE178102T1 (de)
CA (1) CA2021113A1 (de)
DE (2) DE69033022T2 (de)
IE (1) IE73671B1 (de)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6413589B1 (en) 1988-11-29 2002-07-02 Chou H. Li Ceramic coating method
US5273731A (en) * 1989-09-14 1993-12-28 General Electric Company Substantially transparent free standing diamond films
KR930011413B1 (ko) 1990-09-25 1993-12-06 가부시키가이샤 한도오따이 에네루기 겐큐쇼 펄스형 전자파를 사용한 플라즈마 cvd 법
US5902640A (en) * 1991-11-25 1999-05-11 The University Of Chicago Method of improving field emission characteristics of diamond thin films
US5286524A (en) * 1991-12-13 1994-02-15 General Electric Company Method for producing CVD diamond film substantially free of thermal stress-induced cracks
US5443032A (en) * 1992-06-08 1995-08-22 Air Products And Chemicals, Inc. Method for the manufacture of large single crystals
GB9214479D0 (en) * 1992-07-08 1992-08-19 Atomic Energy Authority Uk Pressure transducers
US5361621A (en) * 1993-10-27 1994-11-08 General Electric Company Multiple grained diamond wire die
US5377522A (en) * 1993-10-27 1995-01-03 General Electric Company Diamond wire die with positioned opening
US5465603A (en) * 1993-11-05 1995-11-14 General Electric Company Optically improved diamond wire die
US5514242A (en) * 1993-12-30 1996-05-07 Saint Gobain/Norton Industrial Ceramics Corporation Method of forming a heat-sinked electronic component
EP0668372A1 (de) * 1994-02-16 1995-08-23 General Electric Company Halbtransparenter Diamantfilm
EP0668371A1 (de) * 1994-02-16 1995-08-23 General Electric Company Halbtransparanter Diamantfilm
EP0678592A1 (de) * 1994-04-20 1995-10-25 General Electric Company Verbesserter CVD-Diamant
US5507987A (en) * 1994-04-28 1996-04-16 Saint Gobain/Norton Industrial Ceramics Corp. Method of making a free-standing diamond film with reduced bowing
US5811631A (en) * 1994-04-29 1998-09-22 Motorola, Inc. Apparatus and method for decomposition of chemical compounds using a self-supporting member
US5451430A (en) * 1994-05-05 1995-09-19 General Electric Company Method for enhancing the toughness of CVD diamond
US5672395A (en) * 1994-05-05 1997-09-30 General Electric Company Method for enhancing the toughness of CVD diamond
US5551277A (en) * 1994-09-23 1996-09-03 General Electric Company Annular diamond bodies
US5634370A (en) * 1995-07-07 1997-06-03 General Electric Company Composite diamond wire die
US5634369A (en) * 1995-07-07 1997-06-03 General Electric Company Composite diamond wire die
US5636545A (en) * 1995-07-07 1997-06-10 General Electric Company Composite diamond wire die
US5620745A (en) * 1995-12-19 1997-04-15 Saint Gobain/Norton Industrial Ceramics Corp. Method for coating a substrate with diamond film
US6143412A (en) * 1997-02-10 2000-11-07 President And Fellows Of Harvard College Fabrication of carbon microstructures
US5937514A (en) 1997-02-25 1999-08-17 Li; Chou H. Method of making a heat-resistant system
US6286206B1 (en) 1997-02-25 2001-09-11 Chou H. Li Heat-resistant electronic systems and circuit boards
EP1017874B1 (de) * 1997-07-01 2002-02-20 E.I. Du Pont De Nemours And Company Farblose diamantähnliche kohlenstoffbeschichtungen
US6858080B2 (en) * 1998-05-15 2005-02-22 Apollo Diamond, Inc. Tunable CVD diamond structures
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
US8591856B2 (en) * 1998-05-15 2013-11-26 SCIO Diamond Technology Corporation Single crystal diamond electrochemical electrode
US6676492B2 (en) 1998-12-15 2004-01-13 Chou H. Li Chemical mechanical polishing
US6976904B2 (en) * 1998-07-09 2005-12-20 Li Family Holdings, Ltd. Chemical mechanical polishing slurry
US6458017B1 (en) 1998-12-15 2002-10-01 Chou H. Li Planarizing method
AU2001281404B2 (en) 2001-08-08 2008-07-03 Apollo Diamond, Inc. System and method for producing synthetic diamond
DE10259174B4 (de) 2002-12-18 2006-10-12 Robert Bosch Gmbh Verwendung eines tribologisch beanspruchten Bauelements
US8114505B2 (en) 2003-12-05 2012-02-14 Morgan Advanced Ceramics, Inc. Free-standing silicon carbide articles formed by chemical vapor deposition and methods for their manufacture
US20050123713A1 (en) 2003-12-05 2005-06-09 Forrest David T. Articles formed by chemical vapor deposition and methods for their manufacture
WO2005058519A1 (en) * 2003-12-10 2005-06-30 Diamond Innovations, Inc. Wire drawing die
WO2005080645A2 (en) * 2004-02-13 2005-09-01 Apollo Diamond, Inc. Diamond structure separation
JP6133647B2 (ja) * 2013-03-25 2017-05-24 シチズン時計株式会社 方位計測機能付き電子機器
CN117202064B (zh) * 2023-09-22 2024-05-10 郑州大学 基于金刚石微悬臂梁的光学传声器及传声系统

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US3030187A (en) * 1958-07-23 1962-04-17 Union Carbide Corp Synthesis of diamond
US3630679A (en) * 1968-06-26 1971-12-28 Univ Case Western Reserve Diamond growth process
JPS5927754B2 (ja) * 1981-12-17 1984-07-07 科学技術庁無機材質研究所長 ダイヤモンドの合成法
JPS58135117A (ja) * 1982-01-29 1983-08-11 Natl Inst For Res In Inorg Mater ダイヤモンドの製造法
JPS5918197A (ja) * 1982-07-19 1984-01-30 Sumitomo Electric Ind Ltd ダイヤモンドの気相合成法
JPS60112699A (ja) * 1983-11-24 1985-06-19 Nec Corp ダイヤモンドの製造方法
JPS60118694A (ja) * 1983-11-29 1985-06-26 Mitsubishi Metal Corp ダイヤモンドの低圧合成法
JPS60127292A (ja) * 1983-12-15 1985-07-06 Asahi Chem Ind Co Ltd ダイヤモンドの製造法
JPS60141697A (ja) * 1983-12-27 1985-07-26 Pioneer Electronic Corp ダイヤモンド振動板の製造方法
JPS60186500A (ja) * 1984-03-06 1985-09-21 Nec Corp 気相からのダイヤモンド合成法
US4816286A (en) * 1985-11-25 1989-03-28 Showa Denko Kabushiki Kaisha Process for synthesis of diamond by CVD
US4900628A (en) * 1986-07-23 1990-02-13 Sumitomo Electric Industries, Ltd. Gaseous phase synthesized diamond and method for synthesizing same
JPS63107898A (ja) * 1986-10-23 1988-05-12 Natl Inst For Res In Inorg Mater プラズマを用いるダイヤモンドの合成法
JPS63153815A (ja) * 1986-12-17 1988-06-27 Fujitsu Ltd ダイヤモンドの気相合成方法
JPS63201601A (ja) * 1987-02-18 1988-08-19 Res Dev Corp Of Japan 光学用窓材及びその製造方法
EP0286306B1 (de) * 1987-04-03 1993-10-06 Fujitsu Limited Verfahren und Vorrichtung zur Gasphasenabscheidung von Diamant
JP2603257B2 (ja) * 1987-06-05 1997-04-23 株式会社神戸製鋼所 ダイヤモンド多層薄膜
US4830702A (en) * 1987-07-02 1989-05-16 General Electric Company Hollow cathode plasma assisted apparatus and method of diamond synthesis
US4925701A (en) * 1988-05-27 1990-05-15 Xerox Corporation Processes for the preparation of polycrystalline diamond films
US4958592A (en) * 1988-08-22 1990-09-25 General Electric Company Resistance heater for diamond production by CVD
US4970986A (en) * 1989-08-03 1990-11-20 General Electric Company Apparatus for synthetic diamond deposition including spring-tensioned filaments

Also Published As

Publication number Publication date
KR970005187B1 (ko) 1997-04-14
DE69033022D1 (de) 1999-04-29
US5110579A (en) 1992-05-05
CA2021113A1 (en) 1991-03-15
KR0134248B1 (en) 1998-04-21
EP0676484A2 (de) 1995-10-11
JPH1067596A (ja) 1998-03-10
DE69023847D1 (de) 1996-01-11
IE902561A1 (en) 1991-03-27
JP3176614B2 (ja) 2001-06-18
KR910006143A (ko) 1991-04-27
IE73671B1 (en) 1997-07-02
JPH03150297A (ja) 1991-06-26
DE69023847T2 (de) 1996-05-30
ATE130876T1 (de) 1995-12-15
EP0417512A1 (de) 1991-03-20
EP0676484B1 (de) 1999-03-24
EP0676484A3 (de) 1995-12-06
EP0417512B1 (de) 1995-11-29
DE69033022T2 (de) 1999-09-16

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UEP Publication of translation of european patent specification