KR920012536A - 대칭적인 cvd 다이아몬드 제품 및 그의 제조방법 - Google Patents

대칭적인 cvd 다이아몬드 제품 및 그의 제조방법 Download PDF

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Publication number
KR920012536A
KR920012536A KR1019910023483A KR910023483A KR920012536A KR 920012536 A KR920012536 A KR 920012536A KR 1019910023483 A KR1019910023483 A KR 1019910023483A KR 910023483 A KR910023483 A KR 910023483A KR 920012536 A KR920012536 A KR 920012536A
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South Korea
Prior art keywords
substrate
cvd diamond
layer
cvd
ratio
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KR1019910023483A
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English (en)
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리챠드 안토니 토마스
풀톤 플레이셔 제임스
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아더 엠. 킹
제네랄 일렉트릭 캄파니
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Publication of KR920012536A publication Critical patent/KR920012536A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)

Abstract

내용 없음

Description

대칭적인 CVD 다이아몬드 제품 및 그의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 전체 거리 2C로 분리되는 2개의 필라멘트사이에 기재가 놓인 2개가 필라멘트 공정의 개략도이다, 제2도는 제1도에서 나타난 두개의 필라멘트의 개략도로부터 제조된 증착 이방성의 개략도이다.

Claims (10)

  1. 탄화수소 기체 혼합물을 최소한 부분적으로 분해하기 위하여 고온의 길다란 필라멘트위로 상기 혼합물을 통과시켜 상승된 CVD 다이아몬드-성형 온도로 유지된 기재상에 CVD 다이아몬드층을 형성하는, 상기 기재상에 다이아몬드층을 화학 증착(CVD)시키는 방법에 있어서, 최대 반경 R을 가지며, 상기 필라멘트에 평행하게 배열되어 있는 상기 기재를 고온의 길다란 필라멘트에서 거리 C만큼 떨어져 고정적으로 배치하고, 상기 CVD 다이아몬드층의 두께가 더욱 일정해지도록 R/C의 비율을 감소시키는 것을 포함하는, 고정된 상기 기재상에 실질적으로 일정한 두께의 CVD 다이아몬드층을 형성시킴을 특징으로 하는 방법.
  2. 제1항에 있어서, 단일 고온의 길다란 필라멘트를 사용하는 방법.
  3. 제1항에 있어서, 한쌍의 고온 필라멘트를 거리 2C만큼 이격시키는 방법.
  4. 제2항에 있어서, 상기 R/C의 비율이 약0.02이하인 방법.
  5. 제3항에 있어서, 상기 R/C의 비율이 약0.05이하인 방법.
  6. 제1항에 있어서, 상기 기재가 길다란 와이어를 포함하는 방법.
  7. 제1항에 있어서, 상기 다이아몬드층을 부착시킨 뒤에, 그 층으로부터 상기 기재를 제거하는 방법.
  8. 제1항에 있어서, 상기 기재가 하나 이상의 금속, 합금, 세라믹 또는 탄소인 방법.
  9. 제8항에 있어서, 상기 기재가 Mo를 포함하는 방법.
  10. 제6항에 있어서, 레이저를 사용하여 수득된 환상 다이아몬드 피복 와이어를 단편으로 절단하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910023483A 1990-12-20 1991-12-19 대칭적인 cvd 다이아몬드 제품 및 그의 제조방법 KR920012536A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US63070190A 1990-12-20 1990-12-20
US630,701 1990-12-20

Publications (1)

Publication Number Publication Date
KR920012536A true KR920012536A (ko) 1992-07-27

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ID=24528245

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KR1019910023483A KR920012536A (ko) 1990-12-20 1991-12-19 대칭적인 cvd 다이아몬드 제품 및 그의 제조방법

Country Status (6)

Country Link
EP (1) EP0492160A1 (ko)
JP (1) JPH04305095A (ko)
KR (1) KR920012536A (ko)
CA (1) CA2056239A1 (ko)
IE (1) IE914439A1 (ko)
ZA (1) ZA919623B (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5424096A (en) * 1994-02-14 1995-06-13 General Electric Company HF-CVD method for forming diamond
WO2019039533A1 (ja) * 2017-08-25 2019-02-28 セントラル硝子株式会社 ダイヤモンド基板の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ZA901817B (en) * 1989-06-15 1991-04-24 Gen Electric Tools employing a large or irregularly shaped diamond abrasive
US4970986A (en) * 1989-08-03 1990-11-20 General Electric Company Apparatus for synthetic diamond deposition including spring-tensioned filaments

Also Published As

Publication number Publication date
IE914439A1 (en) 1992-07-01
CA2056239A1 (en) 1992-06-21
JPH04305095A (ja) 1992-10-28
EP0492160A1 (en) 1992-07-01
ZA919623B (en) 1992-11-25

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