KR930013220A - 수소화물-형성 금속 기재상에서의 cvd 다이아몬드 성장 - Google Patents

수소화물-형성 금속 기재상에서의 cvd 다이아몬드 성장 Download PDF

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KR930013220A
KR930013220A KR1019920023936A KR920023936A KR930013220A KR 930013220 A KR930013220 A KR 930013220A KR 1019920023936 A KR1019920023936 A KR 1019920023936A KR 920023936 A KR920023936 A KR 920023936A KR 930013220 A KR930013220 A KR 930013220A
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South Korea
Prior art keywords
substrate
diamond
hydride
forming metal
cvd diamond
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KR1019920023936A
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English (en)
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죠지 코스키 필립
리챠드 안토니 토마스
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아더 엠. 킹
제네랄 일렉트릭 캄파니
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Publication of KR930013220A publication Critical patent/KR930013220A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/271—Diamond only using hot filaments
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer

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  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Chemically Coating (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

본 발명은 수소화물-형성 금속을 포함하는 기재상에서 CVD 다이아몬드 막을 제조하는 방법에 관한 것이다. 이 기재는 수소압에 노출시 기재상에 형성된 CVD 다이아몬드 코팅물을 쉽게 이형시킨다. 큰 크기의 자립 CVD 다이아몬드 막을 기재를 용해시키지 않고도 쉽게 수득된다. 기재는 통상의 CVD반응기에 사용할 수 있다.

Description

수소화물-형성금속 기재상에서의 CVD다이아몬드 성장
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (10)

  1. 수소화물-형성 금속 잔사가 혼입된, 균열이 없는 자립(self-supporting)CVD다이아몬드 막.
  2. 니오브, 티탄, 지르코늄, 하프늄, 바나듐, 탄탈ㅁ 치 팔라듐으로 이루어진 그룹중에서 선택된 수소화물-형성 금속 미량이 혼입되어 있고 10μ를 초과하는 두께 및 1㎟를 초과하는 표면적을 갖는 균열이 없는 자립 CVD 다이아몬드 막.
  3. 수소화물-형성 금속 또는 그의 합금으로 이루어진 가열된 기재를, 이 기재상에서 다이아몬드 코팅물이 성장하는 것을 촉진하는 압력, 온도 및 기체 농도의 조건하에 여기된 탄화수소-수소 기체 혼합물과 접촉시키고, 다이아몬드 코팅 기재를 냉각시키며, 냉각된 다이아몬드 코팅 기재를 수소에 노출시키고, 상기 기재로부터 CVD다이아몬드 막을 제거함을 포함하는 CVD다이아몬드 막의 형성 방법.
  4. 제3항에 있어서, 수소화물-형성 금속이 니오브, 티단, 지르코늄, 하프늄, 바나듐, 탄탈 및 팔라듐으로 이루어진 그룹중에서 선택되는 방법.
  5. 제3항에 있어서, 상기 기재가, 냉각시 다이아몬드 코팅물과 기재사이의 수축차이가 최소화되도록 배합한 수소화물-형성 금속의 합금 또는 복합물을 포함하는 방법.
  6. 제3항에 있어서, 다이아몬드 코팅 기재를 냉각시키고, 냉각후 수소압을 다이아몬드 코팅물을 성장시키는데 사용된 수소압보다 증가시키는 방법.
  7. 제3항에 있어서, 냉각된 다이아몬드 코팅 기재를 다이아몬드/기재 계면을 따라 확산되기에 충분한 시간동안 1 내지 760토르의 수소압에 노출시키는 방법.
  8. 제3항에 있어서, 냉각된 다이아몬드 코팅 기재를 다이아몬드 코팅물이 기재로부터 스스로 이형될때까지 수소에 노출시키는 방법.
  9. 제3항에 있어서, 기재를 다이아몬드 코팅물이 성장하기 전에 다이아몬드 분진으로 처리하는 방법.
  10. 밀폐된 반응실, 이 반응실내에 위치한 기재, 상기 기재의 가열수단, 상기 기재에 탄화수소/수소 기체 혼합물을 충돌시키는 수단, 및 다이아몬드 핵 형성 및 성장을 위해 기재에 충돌시키는 기체를 여기시키는 수단을 포함하는 CVD다이아몬드 합성장치에서, 상기 기재가 니오브, 티탄, 지르코늄, 하프늄, 바나듐, 탄탈, 팔라듐, 그의 합금 또는 비-수소화물-형성 금속을 포함하는 CVD다이아몬드 합성장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920023936A 1991-12-13 1992-12-11 수소화물-형성 금속 기재상에서의 cvd 다이아몬드 성장 KR930013220A (ko)

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US80638891A 1991-12-13 1991-12-13
US806,388 1991-12-13

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US (1) US5478513A (ko)
EP (1) EP0546752B1 (ko)
JP (1) JPH05270983A (ko)
KR (1) KR930013220A (ko)
AT (1) ATE135751T1 (ko)
CA (1) CA2082711A1 (ko)
DE (1) DE69209247T2 (ko)
ZA (1) ZA929238B (ko)

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Also Published As

Publication number Publication date
EP0546752A1 (en) 1993-06-16
DE69209247T2 (de) 1996-10-02
ATE135751T1 (de) 1996-04-15
US5478513A (en) 1995-12-26
DE69209247D1 (de) 1996-04-25
CA2082711A1 (en) 1993-06-14
JPH05270983A (ja) 1993-10-19
ZA929238B (en) 1993-08-11
EP0546752B1 (en) 1996-03-20

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