JPS55148420A - Manufacturing of carbonized silicon crystal layer - Google Patents

Manufacturing of carbonized silicon crystal layer

Info

Publication number
JPS55148420A
JPS55148420A JP5612079A JP5612079A JPS55148420A JP S55148420 A JPS55148420 A JP S55148420A JP 5612079 A JP5612079 A JP 5612079A JP 5612079 A JP5612079 A JP 5612079A JP S55148420 A JPS55148420 A JP S55148420A
Authority
JP
Japan
Prior art keywords
sic
layer
substrate
seed crystal
crystal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5612079A
Other languages
Japanese (ja)
Other versions
JPS626644B2 (en
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5612079A priority Critical patent/JPS55148420A/en
Priority to DE3002671A priority patent/DE3002671C2/en
Publication of JPS55148420A publication Critical patent/JPS55148420A/en
Priority to US06/369,911 priority patent/US4582561A/en
Publication of JPS626644B2 publication Critical patent/JPS626644B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain an SiC crystallized layer of a high degree of completeness by providing an Si substrate, having an SiC seed crystal formed surface, on a carbonized material layer, by fusing the above crystal, depositing an SiC secondary layer, and forming an SiC tertiary layer on the above secondary layer. CONSTITUTION:After forming a seed crystal layer 4, consisted of a mixture of an Si and SiC, on an Si substrate 2, an Si substrate is provided on a graphite base 26, the Si substrate is fused in an H2 atmosphere, and from this Si solution an SiC 14 is liquid-grown on the rear side of seed crystal layer 4. Then the Si is etched, removed from the graphite base 26, it is turned inside out and installed on another sample base 26'. After that, a CVD is performed in the mixed gas of SiH2Cl2, C3H3 and H2, and an SiC layer 15 is grown. Hence, a uniform SiC layer with slight distortion, resulted during crystallization, and a high degree of completeness can be obtained on the seed crystal layer 4.
JP5612079A 1979-01-25 1979-05-07 Manufacturing of carbonized silicon crystal layer Granted JPS55148420A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5612079A JPS55148420A (en) 1979-05-07 1979-05-07 Manufacturing of carbonized silicon crystal layer
DE3002671A DE3002671C2 (en) 1979-01-25 1980-01-25 Process for making a silicon carbide substrate
US06/369,911 US4582561A (en) 1979-01-25 1982-04-19 Method for making a silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5612079A JPS55148420A (en) 1979-05-07 1979-05-07 Manufacturing of carbonized silicon crystal layer

Publications (2)

Publication Number Publication Date
JPS55148420A true JPS55148420A (en) 1980-11-19
JPS626644B2 JPS626644B2 (en) 1987-02-12

Family

ID=13018202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5612079A Granted JPS55148420A (en) 1979-01-25 1979-05-07 Manufacturing of carbonized silicon crystal layer

Country Status (1)

Country Link
JP (1) JPS55148420A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05322008A (en) * 1992-05-22 1993-12-07 Kawasaki Heavy Ind Ltd Lubricating method for transmission

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05322008A (en) * 1992-05-22 1993-12-07 Kawasaki Heavy Ind Ltd Lubricating method for transmission

Also Published As

Publication number Publication date
JPS626644B2 (en) 1987-02-12

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