DE60109339T2 - Verfahren zum Drahtbonden - Google Patents

Verfahren zum Drahtbonden Download PDF

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Publication number
DE60109339T2
DE60109339T2 DE60109339T DE60109339T DE60109339T2 DE 60109339 T2 DE60109339 T2 DE 60109339T2 DE 60109339 T DE60109339 T DE 60109339T DE 60109339 T DE60109339 T DE 60109339T DE 60109339 T2 DE60109339 T2 DE 60109339T2
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Prior art keywords
metal
copper
layer
bondable
demarcation
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Expired - Lifetime
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DE60109339T
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German (de)
English (en)
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DE60109339D1 (de
Inventor
Howard R. Test
Gonzalo Amador
Willmar E. Subido
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Texas Instruments Inc
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Texas Instruments Inc
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Publication of DE60109339D1 publication Critical patent/DE60109339D1/de
Publication of DE60109339T2 publication Critical patent/DE60109339T2/de
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    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Die Bonding (AREA)
DE60109339T 2000-03-24 2001-03-09 Verfahren zum Drahtbonden Expired - Lifetime DE60109339T2 (de)

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Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6936531B2 (en) * 1998-12-21 2005-08-30 Megic Corporation Process of fabricating a chip structure
US7405149B1 (en) 1998-12-21 2008-07-29 Megica Corporation Post passivation method for semiconductor chip or wafer
US6495442B1 (en) 2000-10-18 2002-12-17 Magic Corporation Post passivation interconnection schemes on top of the IC chips
US6965165B2 (en) 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
US7381642B2 (en) 2004-09-23 2008-06-03 Megica Corporation Top layers of metal for integrated circuits
US8021976B2 (en) 2002-10-15 2011-09-20 Megica Corporation Method of wire bonding over active area of a semiconductor circuit
US6898849B2 (en) 2000-09-27 2005-05-31 Texas Instruments Incorporated Method for controlling wire balls in electronic bonding
US7271489B2 (en) 2003-10-15 2007-09-18 Megica Corporation Post passivation interconnection schemes on top of the IC chips
US7372161B2 (en) * 2000-10-18 2008-05-13 Megica Corporation Post passivation interconnection schemes on top of the IC chips
US6683383B2 (en) 2001-10-18 2004-01-27 Intel Corporation Wirebond structure and method to connect to a microelectronic die
US7932603B2 (en) 2001-12-13 2011-04-26 Megica Corporation Chip structure and process for forming the same
EP2293325B1 (en) * 2001-12-14 2013-06-12 STMicroelectronics Srl Semiconductor electronic device and method of manufacturing thereof
US20030127716A1 (en) * 2002-01-09 2003-07-10 Taiwan Semiconductor Manufacturing Co., Ltd. Single layer wiring bond pad with optimum AL film thickness in Cu/FSG process for devices under pads
US6616967B1 (en) * 2002-04-15 2003-09-09 Texas Instruments Incorporated Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process
US6619538B1 (en) * 2002-05-02 2003-09-16 Texas Instruments Incorporated Nickel plating process having controlled hydrogen concentration
JP4457587B2 (ja) * 2002-09-05 2010-04-28 セイコーエプソン株式会社 電子デバイス用基体の製造方法及び電子デバイスの製造方法
US7288845B2 (en) * 2002-10-15 2007-10-30 Marvell Semiconductor, Inc. Fabrication of wire bond pads over underlying active devices, passive devices and/or dielectric layers in integrated circuits
TWI221026B (en) * 2002-12-06 2004-09-11 Nat Univ Chung Cheng Method of thermosonic wire bonding process for copper connection in a chip
WO2004079795A2 (en) 2003-03-04 2004-09-16 Rohm And Haas Electronic Materials, L.L.C. Coaxial waveguide microstructures and methods of formation thereof
US7319277B2 (en) * 2003-05-08 2008-01-15 Megica Corporation Chip structure with redistribution traces
US6969638B2 (en) * 2003-06-27 2005-11-29 Texas Instruments Incorporated Low cost substrate for an integrated circuit device with bondpads free of plated gold
US20050067382A1 (en) * 2003-09-26 2005-03-31 Gary Gillotti Fine pitch electronic flame-off wand electrode
US7459790B2 (en) * 2003-10-15 2008-12-02 Megica Corporation Post passivation interconnection schemes on top of the IC chips
US7394161B2 (en) 2003-12-08 2008-07-01 Megica Corporation Chip structure with pads having bumps or wirebonded wires formed thereover or used to be tested thereto
US20050215048A1 (en) * 2004-03-23 2005-09-29 Lei Li Structure and method for contact pads having an overcoat-protected bondable metal plug over copper-metallized integrated circuits
TWI283443B (en) 2004-07-16 2007-07-01 Megica Corp Post-passivation process and process of forming a polymer layer on the chip
GB2417127A (en) * 2004-08-12 2006-02-15 Vetco Gray Controls Ltd Surface metallization of contact pads
US7833896B2 (en) * 2004-09-23 2010-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Aluminum cap for reducing scratch and wire-bond bridging of bond pads
DE102004047522B3 (de) * 2004-09-28 2006-04-06 Infineon Technologies Ag Halbleiterchip mit einer Metallbeschichtungsstruktur und Verfahren zur Herstellung desselben
US7521805B2 (en) * 2004-10-12 2009-04-21 Megica Corp. Post passivation interconnection schemes on top of the IC chips
TWI269420B (en) 2005-05-03 2006-12-21 Megica Corp Stacked chip package and process thereof
US7216794B2 (en) 2005-06-09 2007-05-15 Texas Instruments Incorporated Bond capillary design for ribbon wire bonding
US7326640B2 (en) * 2005-07-13 2008-02-05 National Chung Cheng University Method of realizing thermosonic wire bonding between metal wires and copper pads by depositing a thin film to surface of semiconductor chip with copper pads
US7413974B2 (en) * 2005-08-04 2008-08-19 Texas Instruments Incorporated Copper-metallized integrated circuits having electroless thick copper bond pads
US7947978B2 (en) * 2005-12-05 2011-05-24 Megica Corporation Semiconductor chip with bond area
JP4793006B2 (ja) * 2006-02-09 2011-10-12 ソニー株式会社 半導体装置及びその製造方法
US7656045B2 (en) * 2006-02-23 2010-02-02 Freescale Semiconductor, Inc. Cap layer for an aluminum copper bond pad
US8344524B2 (en) * 2006-03-07 2013-01-01 Megica Corporation Wire bonding method for preventing polymer cracking
US7800228B2 (en) * 2006-05-17 2010-09-21 International Business Machines Corporation Reliable via contact interconnect structure
US8420520B2 (en) * 2006-05-18 2013-04-16 Megica Corporation Non-cyanide gold electroplating for fine-line gold traces and gold pads
US8421227B2 (en) * 2006-06-28 2013-04-16 Megica Corporation Semiconductor chip structure
US7960825B2 (en) * 2006-09-06 2011-06-14 Megica Corporation Chip package and method for fabricating the same
DE102006044691B4 (de) * 2006-09-22 2012-06-21 Infineon Technologies Ag Verfahren zum Herstellen einer Anschlussleitstruktur eines Bauelements
KR100833187B1 (ko) * 2006-11-02 2008-05-28 삼성전자주식회사 반도체 패키지의 와이어 본딩방법
KR100843705B1 (ko) * 2006-11-17 2008-07-04 삼성전자주식회사 금속 범프를 갖는 반도체 칩 패키지 및 그 제조방법
US20080116077A1 (en) * 2006-11-21 2008-05-22 M/A-Com, Inc. System and method for solder bump plating
CN101274734A (zh) 2006-12-30 2008-10-01 罗门哈斯电子材料有限公司 三维微结构及其形成方法
US8193636B2 (en) 2007-03-13 2012-06-05 Megica Corporation Chip assembly with interconnection by metal bump
US7898356B2 (en) 2007-03-20 2011-03-01 Nuvotronics, Llc Coaxial transmission line microstructures and methods of formation thereof
KR101593686B1 (ko) 2007-03-20 2016-02-12 누보트로닉스, 엘.엘.씨 일체화된 전자 요소들 및 이들의 형성 방법
TWI347643B (en) 2007-06-13 2011-08-21 Advanced Semiconductor Eng Under bump metallurgy structure and die structure using the same and method of manufacturing die structure
US7911061B2 (en) * 2007-06-25 2011-03-22 Infineon Technologies Ag Semiconductor device
US8030775B2 (en) 2007-08-27 2011-10-04 Megica Corporation Wirebond over post passivation thick metal
DE102007046556A1 (de) * 2007-09-28 2009-04-02 Infineon Technologies Austria Ag Halbleiterbauelement mit Kupfermetallisierungen
US8357998B2 (en) * 2009-02-09 2013-01-22 Advanced Semiconductor Engineering, Inc. Wirebonded semiconductor package
US20110123783A1 (en) 2009-11-23 2011-05-26 David Sherrer Multilayer build processses and devices thereof
US8917150B2 (en) * 2010-01-22 2014-12-23 Nuvotronics, Llc Waveguide balun having waveguide structures disposed over a ground plane and having probes located in channels
US8717124B2 (en) * 2010-01-22 2014-05-06 Nuvotronics, Llc Thermal management
US8394713B2 (en) * 2010-02-12 2013-03-12 Freescale Semiconductor, Inc. Method of improving adhesion of bond pad over pad metallization with a neighboring passivation layer by depositing a palladium layer
JP2011216771A (ja) 2010-04-01 2011-10-27 Rohm Co Ltd 半導体装置およびその製造方法
US8610274B2 (en) 2010-09-14 2013-12-17 Infineon Technologies Ag Die structure, die arrangement and method of processing a die
KR101184796B1 (ko) * 2010-12-29 2012-09-20 와이엠티 주식회사 기판 구조물 및 그 제조 방법
CN102605359A (zh) * 2011-01-25 2012-07-25 台湾上村股份有限公司 化学钯金镀膜结构及其制作方法、铜线或钯铜线接合的钯金镀膜封装结构及其封装工艺
JP2012160554A (ja) * 2011-01-31 2012-08-23 Toshiba Corp ボンディングワイヤの接合構造及び接合方法
US8866300B1 (en) 2011-06-05 2014-10-21 Nuvotronics, Llc Devices and methods for solder flow control in three-dimensional microstructures
US8814601B1 (en) 2011-06-06 2014-08-26 Nuvotronics, Llc Batch fabricated microconnectors
FR2977383A1 (fr) * 2011-06-30 2013-01-04 St Microelectronics Grenoble 2 Plot de reception d'un fil de cuivre
WO2013010108A1 (en) 2011-07-13 2013-01-17 Nuvotronics, Llc Methods of fabricating electronic and mechanical structures
US8618677B2 (en) 2012-04-06 2013-12-31 Advanced Semiconductor Engineering, Inc. Wirebonded semiconductor package
US9325044B2 (en) 2013-01-26 2016-04-26 Nuvotronics, Inc. Multi-layer digital elliptic filter and method
JP2013128145A (ja) * 2013-03-11 2013-06-27 Rohm Co Ltd 半導体装置
US9306254B1 (en) 2013-03-15 2016-04-05 Nuvotronics, Inc. Substrate-free mechanical interconnection of electronic sub-systems using a spring configuration
US9306255B1 (en) 2013-03-15 2016-04-05 Nuvotronics, Inc. Microstructure including microstructural waveguide elements and/or IC chips that are mechanically interconnected to each other
US9627344B2 (en) 2013-04-04 2017-04-18 Rohm Co., Ltd. Semiconductor device
US10310009B2 (en) 2014-01-17 2019-06-04 Nuvotronics, Inc Wafer scale test interface unit and contactors
MY171264A (en) 2014-03-28 2019-10-07 Nxp Usa Inc Wire bonding method employing two scrub settings
KR102284123B1 (ko) 2014-05-26 2021-07-30 삼성전기주식회사 회로기판, 전자부품 및 회로기판 제조방법
US9368340B2 (en) * 2014-06-02 2016-06-14 Lam Research Corporation Metallization of the wafer edge for optimized electroplating performance on resistive substrates
KR102207274B1 (ko) 2014-06-11 2021-01-25 삼성전기주식회사 회로기판 및 회로기판 제조방법
US9613843B2 (en) 2014-10-13 2017-04-04 General Electric Company Power overlay structure having wirebonds and method of manufacturing same
US10847469B2 (en) 2016-04-26 2020-11-24 Cubic Corporation CTE compensation for wafer-level and chip-scale packages and assemblies
US10511073B2 (en) 2014-12-03 2019-12-17 Cubic Corporation Systems and methods for manufacturing stacked circuits and transmission lines
US9960130B2 (en) 2015-02-06 2018-05-01 UTAC Headquarters Pte. Ltd. Reliable interconnect
JP6931869B2 (ja) * 2016-10-21 2021-09-08 国立研究開発法人産業技術総合研究所 半導体装置
JP6872991B2 (ja) * 2017-06-29 2021-05-19 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10424552B2 (en) * 2017-09-20 2019-09-24 Texas Instruments Incorporated Alloy diffusion barrier layer
US10319654B1 (en) 2017-12-01 2019-06-11 Cubic Corporation Integrated chip scale packages
JP6937283B2 (ja) * 2018-09-19 2021-09-22 株式会社東芝 半導体装置の製造方法
US11270963B2 (en) 2020-01-14 2022-03-08 Sandisk Technologies Llc Bonding pads including interfacial electromigration barrier layers and methods of making the same
CN112216675A (zh) * 2020-09-11 2021-01-12 中国电子科技集团公司第十三研究所 微组装基板结构及芯片微组装方法
US11676920B2 (en) * 2021-01-26 2023-06-13 United Microelectronics Corp. Semiconductor device and method for fabricating the same

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2184288A (en) * 1985-12-16 1987-06-17 Nat Semiconductor Corp Oxidation inhibition of copper bonding pads using palladium
EP0264648B1 (en) * 1986-09-25 1993-05-05 Kabushiki Kaisha Toshiba Method of producing a film carrier
US4970571A (en) * 1987-09-24 1990-11-13 Kabushiki Kaisha Toshiba Bump and method of manufacturing the same
US4985076A (en) * 1989-11-03 1991-01-15 General Electric Company Autocatalytic electroless gold plating composition
US5291374A (en) * 1990-12-17 1994-03-01 Kabushiki Kaisha Toshiba Semiconductor device having an opening and method of manufacturing the same
US6094058A (en) * 1991-06-04 2000-07-25 Micron Technology, Inc. Temporary semiconductor package having dense array external contacts
US5212138A (en) * 1991-09-23 1993-05-18 Applied Electroless Concepts Inc. Low corrosivity catalyst for activation of copper for electroless nickel plating
EP0567937A3 (en) * 1992-04-30 1993-12-08 Texas Instruments Incorporated High reliability die processing
US5380560A (en) * 1992-07-28 1995-01-10 International Business Machines Corporation Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition
US5436412A (en) * 1992-10-30 1995-07-25 International Business Machines Corporation Interconnect structure having improved metallization
US5821627A (en) * 1993-03-11 1998-10-13 Kabushiki Kaisha Toshiba Electronic circuit device
US5656858A (en) * 1994-10-19 1997-08-12 Nippondenso Co., Ltd. Semiconductor device with bump structure
DE4442960C1 (de) * 1994-12-02 1995-12-21 Fraunhofer Ges Forschung Lothöcker für die Flip-Chip-Montage und Verfahren zu dessen Herstellung
JP3296400B2 (ja) * 1995-02-01 2002-06-24 東芝マイクロエレクトロニクス株式会社 半導体装置、その製造方法およびＣｕ製リード
JP3362545B2 (ja) * 1995-03-09 2003-01-07 ソニー株式会社 半導体装置の製造方法
US5922517A (en) * 1996-06-12 1999-07-13 International Business Machines Corporation Method of preparing a substrate surface for conformal plating
US5801452A (en) * 1996-10-25 1998-09-01 Micron Technology, Inc. Multi chip module including semiconductor wafer or dice, interconnect substrate, and alignment member
US5766979A (en) * 1996-11-08 1998-06-16 W. L. Gore & Associates, Inc. Wafer level contact sheet and method of assembly
US6016060A (en) * 1997-03-25 2000-01-18 Micron Technology, Inc. Method, apparatus and system for testing bumped semiconductor components
US5910644A (en) * 1997-06-11 1999-06-08 International Business Machines Corporation Universal surface finish for DCA, SMT and pad on pad interconnections
US6040239A (en) * 1997-08-22 2000-03-21 Micron Technology, Inc. Non-oxidizing touch contact interconnect for semiconductor test systems and method of fabrication
US6097087A (en) * 1997-10-31 2000-08-01 Micron Technology, Inc. Semiconductor package including flex circuit, interconnects and dense array external contacts
JPH11140658A (ja) 1997-11-05 1999-05-25 Hitachi Chem Co Ltd 半導体搭載用基板とその製造方法
US6107180A (en) * 1998-01-30 2000-08-22 Motorola, Inc. Method for forming interconnect bumps on a semiconductor die
KR19990083024A (ko) * 1998-04-08 1999-11-25 윌리엄 비. 켐플러 구리 메탈리제이션를 위한 ｐｏ 플로우
US5937320A (en) * 1998-04-08 1999-08-10 International Business Machines Corporation Barrier layers for electroplated SnPb eutectic solder joints
US6320263B1 (en) * 1999-02-18 2001-11-20 Advanced Micro Devices, Inc. Semiconductor metalization barrier and manufacturing method therefor
US6362089B1 (en) * 1999-04-19 2002-03-26 Motorola, Inc. Method for processing a semiconductor substrate having a copper surface disposed thereon and structure formed
GB9914936D0 (en) * 1999-06-26 1999-08-25 Cerestar Holding Bv Directly compressible starch as enhancer of properties of excipients when used as binder and disintegrant for compression tablets
US6306751B1 (en) * 1999-09-27 2001-10-23 Lsi Logic Corporation Apparatus and method for improving ball joints in semiconductor packages
US6310263B1 (en) * 1999-11-08 2001-10-30 Dotolo Research Ltd. Heavy oil remover
US20010033020A1 (en) * 2000-03-24 2001-10-25 Stierman Roger J. Structure and method for bond pads of copper-metallized integrated circuits
US6445069B1 (en) * 2001-01-22 2002-09-03 Flip Chip Technologies, L.L.C. Electroless Ni/Pd/Au metallization structure for copper interconnect substrate and method therefor

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CN1317389A (zh) 2001-10-17
US20010035452A1 (en) 2001-11-01
CN1245272C (zh) 2006-03-15
US20050106851A1 (en) 2005-05-19
JP2001319946A (ja) 2001-11-16
DE60109339D1 (de) 2005-04-21
EP1139413A3 (en) 2002-06-12
US6800555B2 (en) 2004-10-05
EP1139413A2 (en) 2001-10-04
KR20010090525A (ko) 2001-10-18
KR100741592B1 (ko) 2007-07-20

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