KR20010090525A - 구리 배선 집적 회로의 와이어 본딩 프로세스 - Google Patents

구리 배선 집적 회로의 와이어 본딩 프로세스 Download PDF

Info

Publication number
KR20010090525A
KR20010090525A KR1020010015120A KR20010015120A KR20010090525A KR 20010090525 A KR20010090525 A KR 20010090525A KR 1020010015120 A KR1020010015120 A KR 1020010015120A KR 20010015120 A KR20010015120 A KR 20010015120A KR 20010090525 A KR20010090525 A KR 20010090525A
Authority
KR
South Korea
Prior art keywords
metal
copper
layer
bondable
diffusion
Prior art date
Application number
KR1020010015120A
Other languages
English (en)
Other versions
KR100741592B1 (ko
Inventor
테스트호워드알.
아마도곤잘로
스비도윌리마이.
Original Assignee
윌리엄 비. 켐플러
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 비. 켐플러, 텍사스 인스트루먼츠 인코포레이티드 filed Critical 윌리엄 비. 켐플러
Publication of KR20010090525A publication Critical patent/KR20010090525A/ko
Application granted granted Critical
Publication of KR100741592B1 publication Critical patent/KR100741592B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53233—Copper alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05075—Plural internal layers
    • H01L2224/0508—Plural internal layers being stacked
    • H01L2224/05082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/05111—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05155—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05157—Cobalt [Co] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05164—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05166—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05171—Chromium [Cr] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/0518—Molybdenum [Mo] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05099—Material
    • H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05184—Tungsten [W] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05639—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05647—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05655—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05664—Palladium [Pd] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05669—Platinum [Pt] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/0568—Molybdenum [Mo] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45014—Ribbon connectors, e.g. rectangular cross-section
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4845—Details of ball bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48639—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48647—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48655—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48663—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48664—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48663—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48669—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48663—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/4868—Molybdenum (Mo) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48724—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48739—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48747—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48755—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48763—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48764—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48763—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48769—Platinum (Pt) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48763—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/4878—Molybdenum (Mo) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48839—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48844—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48847—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48838—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48855—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48863—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/48864—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48799—Principal constituent of the connecting portion of the wire connector being Copper (Cu)
    • H01L2224/488—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48863—Principal constituent of the connecting portion of the wire connector being Copper (Cu) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/4888—Molybdenum (Mo) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78252—Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the capillary or wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/78253—Means for applying energy, e.g. heating means adapted for localised heating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
    • H01L2224/85013—Plasma cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01073—Tantalum [Ta]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01076—Osmium [Os]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0494—4th Group
    • H01L2924/04941—TiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0495—5th Group
    • H01L2924/04953—TaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0504—14th Group
    • H01L2924/05042—Si3N4
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20751—Diameter ranges larger or equal to 10 microns less than 20 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

집적회로의 상호접속 구리 배선에 전기적 와이어/리본 접속을 가능하게 해주는 튼튼하고 신뢰성 있으며 저비용인 금속 구조물과 그 프로세스에 관한 것이다. 구조물은 배리어 층이 250℃에서 구리의 확산을 배리어 금속이 존재하지 않을 때와 비교하여 80% 이상 감소시키도록 조정된 두께로 비산화 구리 표면에 침착되어 구리 확산을 저지하는 배리어 금속층을 포함한다. 구조물은 또한 250℃에서 배리어 금속의 확산을 본딩가능한 금속이 존재하지 않을 때와 비교하여 80% 이상 감소시키는 본딩가능한 최외부 층을 더 포함한다. 마지막으로 금속 와이어를 금속 접속을 위해 최외부 층에 본딩한다.
배리어 금속은 니켈, 코발트, 크롬, 몰리브덴, 티타늄, 텅스텐 및 이들의 합금으로 구성되는 그룹에서 선택한다. 본딩가능한 최외부 금속층은 금, 백금 및 은으로 구성되는 그룹에서 선택한다.

Description

구리 배선 집적 회로의 와이어 본딩 프로세스{WIRE BONDING PROCESS FOR COPPER-METALLIZED INTEGRATED CIRCUITS}
본 발명은 일반적으로 반도체 디바이스와 그 프로세스 분야에 관한 것으로서, 특히 구리 배선 집적회로의 본드 패드에 대한 와이어링 본딩에 관한 것이다.
집적회로(IC) 기술에 있어서, 상호접속과 본드 패드를 위한 배선 선택으로서 순수한 또는 도핑된 알루미늄이 40년 이상 사용되어 왔다. 알루미늄의 주요장점은 침착과 패터닝이 용이하다는 점이다. 또한 알루미늄 본드 패드에 대한 금, 구리 또는 알루미늄으로 된 본딩 와이어 기술은 높은 수준의 자동화, 소형화 및 신뢰성으로 개발되어 왔다. 알루미늄에 대한 와이어 본딩의 높은 기술 표준은 발명의 명칭이 "집적회로 전도성 본드에서 금속학적 안정성을 얻기 위한 방법"인 Ramsey 등의 1995년 10월 3일자 미국 특허 제 5,455,195호와, 발명의 명칭이 "125 ㎑ 이상의 초음파 본딩 프로세스"인 Ramsey 등의 1993년 9월 14일자 미국 특허 제 5,244,140호와, 발명의 명칭이 "집적회로 상호접속부에서 향상된 금속간 성장을 위한 프로세스"인 Alfaro 등의 1993년 4월 13일자 미국 특허 제 5,201,454호와, 그리고 발명의 명칭이 "구리 와이어 볼 본딩을 갖는 반도체 디바이스"인 Tsumura의 1991년 6월 11일자 미국 특허 제 5,023,697호를 예로 들 수 있다.
IC를 최소화시키는 연속되는 경향에 있어서, 능동 회로 소자간의 상호접속부의 RC 시간 상수는 얻을 수 있는 IC 스피드-파워 제품을 꾸준히 좌우한다. 따라서비교적 높은 상호접속 알루미늄의 저항율은 이제 구리와 같은 낮은 저항율의 금속에 비해 열등하게 나타난다. 또한 전자이동에 대한 알루미늄의 뚜렷한 감도는 심각한 장애로 되고 있다. 그 결과로서, 높은 전기전도성과 낮은 전자이동 감도에 기초하여 바람직한 상호접속 금속으로서 구리를 사용하는 것이 이제 반도체 업계에서 강한 구동력이 되고 있다. 그러나 성숙한 알루미늄 상호접속 기술의 관점에서 보면, 구리로의 변환은 상당한 기술적 도전이다.
구리는 IC의 실리콘 기본 재료로의 확산을 방지하여 회로를 실리콘 격자에 위치한 구리 원자의 특성을 해치는 캐리어 존재로부터 방지해야 한다. 구리로 된 본드 패드에 있어서, 제조공정 중에 얇은 산화구리 막의 형성은 이 막이 본딩 와이어의 신뢰성 있는 부착을 심각하게 억제하기 때문에 특히 통상의 금-와이어 볼 본딩에 대해서는 방지되어야 한다. 금속 알루미늄을 덮는 산화알루미늄 막에 비하여, 금속 구리를 덮는 산화구리 막은 본딩 프로세스에서 적용된 열압축과 초음파 에너지에 조합에 의해 용이하게 깨어지지 않는다. 다른 난점으로서, 노출된 구리 본드 패드는 부식에 민감하다는 점이 있다.
상기한 문제점을 극복하기 위하여, 깨끗한 구리 본드 패드를 알루미늄 층으로 씌우는 프로세스, 즉 통상의 금-와이어 볼 본딩에 의해 본딩될 알루미늄 패드의 전통적 상태를 재구성하는 프로세스가 발표되었다. 이에 대한 적합한 본딩 프로세스로는 발명의 명칭이 "기존의 IC 와이어 본딩 기술과 호환성이 있는 진보된 구리 상호접속 시스템"인 Cheung 등의 1998년 7월 28일자 미국 특허 제 5,785,236호가 있다. 그러나 상기 제안한 방안은 다수의 결점이 있다.
첫째, 알루미늄 캡의 제조단가는 그 프로세스가 금속 침착, 패터닝, 에칭 및 세정을 위한 부가적인 단계를 필요로 하기 때문에 원하는 것보다 높다. 둘째, 캡은 구리가 캡 금속을 통해 확산되는 것을 방지하기에 충분히 두꺼워야 하며, 이것은 IC 트랜지스터에 해로울 수 있다. 셋째, 캡에 사용된 알루미늄은 연하고, 이에 따라서 전기 테스트에서 멀티프로브 접점의 마킹에 의해 심각하게 손상받을 수 있다. 이 손상은 다시 본드 패드의 여전히 축소하는 사이즈를 좌우하여 결과적인 볼 본드 부착이 더 이상 신뢰성 있게 되지 않는다.
구리 배선 IC의 구리 본드 패드를 캡핑하기 위한 저비용의 구조물과 그 방법은 2000년 2월 18일자 출원된 미국 특허원 제 60/183,405호에 기재되어 있다. 상기 발명은 그 용도에 관련되어 있다. 연속 와이어 본딩을 잠재적으로 저해할 수 있는 금속의 최대 업(up)-확산 제어와 최소 제조단가를 조합하는 긴급한 요건이 캡핑된 본드 패드를 와이어 본딩하기 위한 신뢰성 있는 방법에 대두되었다. 본딩 방법은 이종의 IC 제품 가족과 광범위한 디자인 및 프로세스 변경에 적용하기에 충분한 융통성을 지녀야 한다. 이러한 혁신은 제조 사이클 타임을 단축하고, 생산성을 증대하며, 반면에 고가의 부가적인 제조장비를 필요로 하지 않으면서 달성될 수 있는 것이 바람직하다.
본 발명은 튼튼하고 신뢰성 있으며 저비용인 금속 구조물과, 집적회로(IC)의 상호접속 구리 배선에 전기적 와이어 접속을 가능하게 해주는 프로세스를 기술한 것이다. 구조물은 배리어 층이 250℃에서 배리어 금속이 존재하지 않을 때와 비교하여 80% 이상 구리의 확산을 감소시키는 두께로 비산화 구리 표면에 침착되어 구리 확산을 방지하는 배리어 금속층을 포함한다. 구조물은 또한 250℃에서 배리어 금속의 확산을 본딩가능한 금속이 존재하지 않을 때와 비교하여 80% 이상 감소시키는 최외부 층을 포함한다. 마지막으로 금속 와이어가 금속 접속을 위해 최외부 층에 본딩된다.
배리어 금속은 니켈, 코발트, 크롬, 몰리브덴, 티타늄, 텅스텐 및 이들의 합금으로 구성되는 그룹에서 선택한다. 최외부 층은 금, 백금 및 은으로 구성되는 그룹에서 선택한다.
본 발명은 구리 상호접속 배선을 가지며, 특히 많은 수의 배선 입력/출력(input/output) 또는 "본드 패드"를 갖는 고밀도 및 고속 IC에 관련된다. 이러한 회로는 프로세서, 디지털 및 아날로그 디바이스, 논리 디바이스, 고주파 및 고전력 디바이스, 그리고 큰 영역 및 작은 영역 칩 카테고리 양자와 같은 많은 디바이스 가족에서 발견될 수 있다.
본 발명의 한 태양은 본드 패드 영역 감소에 적용가능하여 IC 칩의 축소를 지지하는 것이다. 그 결과로서, 본 발명은 셀 통신, 호출기, 하드 디스크 드라이브, 랩톱 컴퓨터 및 의료장비와 같이 연속적으로 축소하는 용도의 스페이스 압박을 완화하는데 일조하게 된다.
본 발명의 다른 태양은 본드 패드 금속 캡을 무전해 침착의 자기정의(self-defining) 프로세스로 제조하여 비용이 드는 포토리소그래픽 및 얼라인먼트 기법을 면제하는 것이다.
본 발명의 다른 태양은 알맞은 금속 쌍에 조정된 층 두께를 선택하기 위해 금속 확산계수를 유도하여 상승 본딩 온도에서의 업-확산과 결과적인 본드 억제 화학반응을 최소로 하는 것이다.
본 발명의 다른 태양은 프로브 마크를 삭제하고, 그 결과 본딩 난점을 극복하여 웨이퍼 레벨 멀티 프로빙의 프로세스와 신뢰성을 진보시키는 것이다.
본 발명의 다른 태양은 많은 반도체 제품 가족에 적용할 수 있고 또한 다수 세대의 제품에 적용할 수 있도록 융통성 있는 디자인과 프로세스 개념을 제공하는 것이다.
본 발명의 다른 태양은 IC 디바이스의 제조에 가장 일반적으로 사용되고 허용된 디자인과 프로세스만을 사용하여 신규 투자자금의 비용을 없애고, 기존 설치된 제조장비 베이스를 사용하는 것이다.
상기 목적은 대량 생산에 적합한 선택 기준과 프로세스 흐름에 관련한 본 발명의 기술사상에 의해 달성되었다. 본드 패드의 구리의 비산화 표면은 팔라듐과 같은 금속에 의해 시딩(seeding)되고, 니켈과 같은 배리어 금속으로 피복된다. 배리어 층의 두께는 본딩 작업의 상승 온도에서 과도한 구리 업-확산을 방지할 수 있는 정도로 한다. 최외부 층은 팔라듐 또는 금과 같은 본딩가능한 금속이다. 층 두께는 와이어 본딩을 산화시키고 저해하는 장소에서 니켈이 그 표면에 업-확산되는 것을 방지할 수 있는 정도로 한다. 대량 생산에 있어서, 각종 금속층은 무전해 도금에 의해 침착되어 고가의 포토리소그래픽 규정 단계의 요건을 회피할 수 있다.
본 발명 뿐 아니라 그 태양에 의해서 나타난 기술적 진보는 첨부된 도면을참조로 한 바람직한 실시예의 설명으로부터 분명해질 것이며, 신규한 특징은 첨부된 특허청구범위에 기술되어 있다.
도 1a는 본 발명의 바람직한 실시예의 개략적인 단면도로서, 구리 배선을 갖는 집적회로의 본드 패드 상의 적층된 층의 본딩가능한 캡의 단면도.
도 1b는 볼-본드 와이어를 포함하는 도 1a의 본드 패드의 단면도.
도 2는 본 발명의 바람직한 실시예의 더욱 상세한 개략적인 단면도.
도 3은 본 발명의 바람직한 실시예의 더욱 상세한 개략적인 단면도.
도 4는 본 발명에 따라 본드 패드 캡을 제조하기 위한 공정도.
부록 : 표 1는 하부 금속의 업-확산을 배리어 금속이 존재하지 않을 때와 비교하여 80% 이상 감소시키는데 필요한 배리어 금속층의 계산된 두께의 리스트.
〈도면의 주요부분에 대한 부호의 설명〉
100 : 제 1 실시예
101 : 보호 오버코팅 층
102 : 윈도우
103 : 구리 배선
104 : IC 부분
105 : 금속층
106 : 최외부 금속층
110 : 와이어
111 : 와이어 본드
201 : 보호 오버코팅 층
201a : 감소된 두께
203 : 구리
203a : 비산화 구리 표면
205 : 배리어 층
205a : 캡
206 : 본딩가능한 층
206a : 캡
208 : 금속 시드 층
211 : 와이어 볼
301 : 보호 오버코팅 층
302 : 금속 쉴드
303 : 구리 배선
303a : 비산화 구리 표면
304 : 유전체
304a : 보강재
305,306 : 금속층
308 : 얇은 층
도 1a는 도면부호 100으로 표시한 본 발명의 바람직한 실시예의 개략적인 단면도이다. 집적회로(IC)는 구리 상호접속 배선을 가지며, 습기 불가입성 보호 오버코팅(101)에 의해 피복되어 있다. 이 오버코팅은 통상적으로 두께가 0.5-1.0㎛이며, 일반적으로 실리콘 질화물로 되어 있다. 윈도우(102)는 오버코팅에서 개방되어 구리 배선(103)의 부분을 노출시키게 되어 있다. 도 1a에 도시되지 않은 것은 구리를 매립하고 IC의 부분 내로 확산되는 것을 방지하는 하부 층(일반적으로 탄탈룸 질화물, 탄탈룸 실리콘 질화물, 텅스텐 질화물, 텅스텐 실리콘 질화물, 티타늄, 티타늄 질화물 또는 티타늄 텅스텐으로 구성됨. 도 3 참조)이다.
도 1a에서 유전체 IC 부분(104)은 개략적으로만 나타나 있다. 이 전기절연 부분은 이산화실리콘과 같이 통상적인 플라즈마 증강 화학증착된 유전체를 포함할 뿐 아니라 실리콘 함유 수소 실세스키옥산(silsesquioxane), 유기 폴리이미드, 에어로겔 및 파릴렌(parylene), 또는 플라즈마 발생되거나 오존 테트라에틸오르소실리케이트 산화물을 포함하는 유전체 층의 적층을 포함할 수 있다. 이러한 재료는 밀도가 낮고, 또 기존의 표준 절연체보다 기계적으로 약하기 때문에, 구리 하부의 유전체는 종종 강화된다. 이에 대한 예는 발명의 명칭이 "반도체에서 본드 패드를 강화하기 위한 미세 피치 시스템 및 그 방법"인 Saran 등의 1998년 5월 18일자 미국 특허원 제 60/085,876호와 발명의 명칭이 "능동 집적회로 상에 본딩을 위한 시스템 및 방법"인 Saran의 1998년 7월 14일자 미국 특허원 제 60/092,961호에서 찾을 수 있다.
구리는 부식에 민감하고, 또 얇은 구리(Ⅰ) 산화물 막은 본딩하기 어렵기 때문에, 본 발명은 도 1, 2 및 3에 도시된 바와 같이 노출된 구리 상에 형성된 캡 구조물과 그 프로세스를 제공한다. 본 발명에 따르면, 캡은 적층이 다음과 같은 3가지 요건을 만족시키도록 조정된 두께를 갖는 금속 적층으로 구성된다.
*캡은 구리가 후속 와이어 본딩 작업을 저해하는 장소에서 캡의 표면에 구리의 업-확산을 방지하는 배리어로서 작용한다. 특히 캡 금속 선택과 두께는 캡이 250℃에서 구리의 업-확산이 배리어 금속이 존재하지 않을 때와 비교하여 80% 이상 감소시키도록 조정된다.
*캡은 고가의 포토리소그래픽 단계를 회피하는 기법으로 제조한다. 특히 무전해 도금을 사용하여 캡 금속층을 침착한다.
*캡은 본딩가능한 최외부 금속 표면을 갖는다. 특히 통상의 볼 및 웨지(ball and wedge) 본딩 기법을 사용하여 금속 와이어와 다른 결합 부재를 본드 패드에 금속학적으로 접속시킨다.
도 1b 및 2에 나타난 바와 같이, 와이어 볼 본딩은 전기접속을 형성하기 위해 결합 부재를 사용하는 바람직한 방법이다. 다른 방법은 웨지 본더를 사용하는 리본 본딩이다. 웨지 본딩과 비교하여 볼 본딩은 본 발명의 재료와 프로세스가 조화되기에 필요한 상승 온도에서 작업한다.
와이어 본딩 프로세스는 IC 칩을 본드 패드와, 그 온도를 170℃와 300℃ 사이로 올리기 위하여 가열된 받침대 상에서 칩이 본딩되는 대상물 양자를 위치시키는 것으로 개시된다. 두께가 전형적으로 18-33㎛이며, 전형적으로 금, 금-베릴륨 합금, 기타 금 합금, 구리, 알루미늄 또는 이들의 합금으로 구성된 와이어(110, 도 1b)는 온도가 통상 200-500℃로 가열된 캐필러리(capillary)를 통해 배열된다. 와이어의 선단에는 개방(free air) 볼이 플레임 또는 스파크 기법에 의해 형성된다. 볼은 와이어 직경에 약 1.2-1.6의 전형적인 직경을 갖는다. 캐필러리는 칩 본딩 패드(102, 도 1a)를 향하여 이동하고, 볼은 본딩 패드 캡의 배선(도 1a와 1b에서 층(106))에 대해 프레싱된다. 압축력과 초음파 에너지의 조합은 금속간확산에 의해 강한 금속 본드의 형성체를 만든다. 본딩시에 온도는 통상적으로 150-270℃이다. 도 1b에서 개략적인 형태(111)는 와이어 볼 본딩에서 부착된 "볼"의 최종 형상을 예시한 것이다.
와이어 본딩에서 최근의 기술적 진보는 이제 작고 게다가 신뢰성 있는 볼 접점과 와이어 루프의 완전하게 제어된 형상의 형성체를 가능하게 해주는 것이 본 발명에 중요하다. 볼 피치는 40-75㎛ 사이만큼 작게 얻을 수 있다. 이와 같은 진보의 예는 미국 펜실베니아주 윌로우 그로브 소재의 Kulicke & Soffa에 의한 컴퓨터화 본더 8020 또는 미국 텍사스주 달라스 소재의 Texas Instrument에 의한 ABACUSSA에서 찾을 수 있다. 캐필러리를 공기를 통해 예정된 방식 및 검퓨터 제어 방식으로 이동시키면, 정확하게 규정된 형상의 와이어 루프가 형성된다. 마지막으로 캐필러리를 원하는 목적지에 도달시키고 하향하여 대상물의 접점 패드와 접촉시킨다. 캐필러리를 임프린트(imprint)하여 금속학적 스티치 본드(stitch bond)를 형성하고,와이어를 열절단하여 캐필러리를 해제한다. 스티치 접점은 작지만 신뢰성이 있는데, 스티치 임프린트의 횡방향 치수는 와이어 직경의 약 1.5-3배이다(그 정확한 형상은 사용된 캐필러리의 형상, 즉 캐필러리 벽 두께와 캐필러리 풋프린트에 따른다).
전기 멀티 프로빙에 사용된 미세 선단 니들이 프로브 마크를 형성하지 않기에 충분히 단단한 본드 패드의 금속 캡 표면을 제공하는 것은 본 발명의 한 장점이다. 니들 임프린트에 의해 찢어진 연한 금속 표면은 본드 패드의 영역이 작아서-현재 본드 패드 축소 경향-임프린트가 이용가능한 본딩 영역의 대부분을 방해할 때 특히 본딩하기 어렵다.
본 발명에 따라서 구리(103) 상의 금속 캡은 2개 층에 의해 제공된다.
층(105)은 구리(203) 상에 위치하는데, 가끔 시드 금속층 상에 침착된다(도 2 및 3 참조). 층(105)을 위한 예는 니켈, 코발트, 크롬, 몰리브덴, 티타늄, 텅스텐 및 이들의 합금이다. 이들 금속은 비싸지 않으며, 무전해 도금에 의해 침착될 수 있지만, 본딩성이 좋지 않다. 상기 금속에서 구리는 250℃에서 1×10E-23㎠/s보다 작은 확산계수를 갖는다. 따라서 상기 금속은 우수한 구리 확산 배리어이다. 구리 확산을 층이 존재하지 않을 때와 비교하여 80% 이상 감소시키는데 필요한 층 두께는 확산 계산으로 얻는다. 예로서 부록의 표는 구리를 250℃ 또는 160℃에서 확산할 때 변수로서 확산 시간(분)과 니켈의 층 두께를 리스트로 묶은 것이다. 일반적으로 0.5-1.5㎛의 배리어 두께는 구리 감소 기준을 안전하게 만족시킬 것이다.
층(106)은 캡의 최외부 층으로서 층(105) 상에 위치하는데, 이것은 본딩가능하여 와이어 본드(111)를 허용할 수 있다. 층(106)의 예로는 금, 백금, 팔라듐 및 은이 있다. 부가적으로 이들 금속은 250℃에서 1×10E-14㎠/s 이하의 배리어(105, 예로서 니켈)에 사용된 금속을 위한 확산계수를 갖는다. 따라서 이들 금속은 층(105)의 재료에 대해 우수한 확산 배리어이다. 층(105)에 사용된 금속의 업-확산을 층(106)이 존재하지 않을 때와 비교하여 80% 이상 감소시키는데 필요한 층 두께는 확산 계산으로부터 구한다. 예로서 부록의 표는 니켈이 250℃ 또는 160℃에서 업-확산될 때 금의 층 두께(㎛)와 변수로서 확산 시간(분)을 리스트로 묶은 것이다. 일반적으로 1.5㎛ 또는 이보다 다소 작은 최외부 층 두께는 층(105)으로부터 확산되는 금속을 위한 감소 기준을 안전하게 만족시킬 것이다.
다른 예로서, 부록의 표는 니켈이 250℃ 또는 160℃에서 업-확산될 때 팔라듐의 층 두께(㎛)와 변수로서 확산 시간(분)을 리스트로 묶은 것이다. 일반적으로 약 0.4-1.5㎛인 최외부 층(106) 두께는 층(105)으로부터 확산되는 금속을 위한 감소 기준을 안전하게 만족시킬 것이다.
무전해 도금 공정을 도 4를 참조하여 설명한다. 도금된 층은 보통 본드 패드 개구부(102, 도 1a)의 사이즈 내에 일치한다. 그러나 감소된 층의 보호 오버코팅을 갖는 본드 패드에 대해서는 하나 또는 그 이상의 도금 층이 개구부의 원주를 넘어 무전해 성장할 수 있다. 도 2는 이러한 층 성장의 일례를 개략적으로 도시한 것이다. 보호 오버코팅 층(201)은 감소된 층(201a)(예로서 통상의 1.0㎛ 대신에 0.5㎛)을 갖는다. 구리 배선(203)의 비산화 표면(203a) 상에 직접 도금된 금속 시드 층(208)은 오버코팅 개구부 내에 용이하게 일치하지만, 배리어 층(205)과 본딩가능한 층(206)은 개구부 원주를 넘어 성장한다. 이러한 캡 구역은 도 2에서 도면부호 205a와 206a로 표시되어 있는데, 이것은 와이어 "볼(211)"의 금속학적 부착에 영향을 미치지 않지만, 인접한 본드 패드에 대한 최소 거리에 영향을 미칠 수 있다.
도 3은 본 발명의 바람직한 실시예를 더 상세히 도시한 것으로서, 대부분의 치수 범위는 도 1a 및 1b에서 인용한 것이며, 무전해 도금과 그 밖의 제조 프로세스 단계는 도 4에서 검토한다. 보호 오버코팅(301)은 본드 패드의 사이즈를 규정하는 개구부를 가지며, 그 두께는 본드 패드 IC 구리 배선(303)을 씌우는 모든 적층을 수용하기에 충분하게 되어 있다. 구리 트레이스(303, trace)는 유전체(304)와 금속 보강재(304a)에 의해 둘러싸인 내화 금속 쉴드(302, shield)(예로서 탄탈룸 질화물)에 몰입된다.
세정되고 산화되지 않은 구리 표면(303a)에 직접 면하는 것은 캡의 제 1 층, 즉 시드 금속의 얇은 층(308)(예로서 두께가 약 5-10㎚인 팔라듐, 다른 선택은 주석)이다. 시드 금속층 바로 다음은 구리 업-확산에 대한 배리어로서 금속층(305)(예로서 니켈)이다. 배리어 층의 정상에는 배리어 금속(예로서 니켈)의 업-확산에 대한 배리어로서 또 동시에 금속학적으로 본딩가능한 캡의 최외부 층으로서 금속층(306)(예로서 금 또는 팔라듐)이 위치한다.
도 3의 본드 패드 캡의 제조에 사용된 무전해 도금은 도 4에서 설명한다. 본드 패드를 보호 오버코팅에서 개방시킨 후에 본드 패드 영역에서 구리 IC 배선을 노출시키면, 캡 침착 프로세스는 단계(401)에서 개시하여 다음과 같은 프로세스 단계 순서를 밟는다.
＊단계(402) : 실리콘 IC 웨이퍼의 뒷면에 스핀-온(spin-on) 기법을 사용하여 레지스트를 코팅한다. 이 코팅은 웨이퍼 뒷면 상에 우발적인 금속 침착을 방지한다.
＊단계(403) : 전형적으로 약 30-60분 동안 110℃에서 레지스트를 베이킹한다.
＊단계(404) : 플라즈마 애싱(ashing) 프로세스를 사용하여 노출된 본드 패드 구리 표면을 약 2분 동안 세정한다.
＊단계(405) : 본드 패드의 노출된 구리를 갖는 웨이퍼를 황산, 질산 또는 기타 산의 용액에 약 50-60초 동안 침지하여 세정한다.
＊단계(406) : 오버플로우 린서(overflow rinser)에서 약 100-180초 동안 세척한다.
＊단계(407) : 웨이퍼를 팔라듐 염화물과 같은 촉매 금속 염화물 용액에 약 40-80초 동안 침지하여 구리 표면을 "활성화"시킨다. 즉 시드 금속(예로서 팔라듐)의 얇은 층을 세정된 비산화 구리 표면 상에 침착한다.
＊단계(408) : 덤프 린서(dump rinser)에서 약 100-180초 동안 세척한다.
＊단계(409) : 구리의 업-확산에 대해 배리어 금속을 무전해 도금한다. 니켈을 선택할 경우, 150-180초 동안 도금하면 약 0.4-0.6㎛ 두께의 니켈이 침착된다.
＊단계(410) : 덤프 린서에서 약 100-180초 동안 세척한다.
＊단계(411) : 본딩가능하며, 동시에 하부 배리어 금속의 업-확산에 대한 배리어를 제공하는 최외부 층을 무전해 도금한다. 금이나 팔라듐을 선택할 경우,150-180초 동안 도금하면 약 0.4-0.6㎛ 두께의 금 또는 팔라듐이 각각 침착된다. 바람직한 프로세스는 먼저 표면 금속 교체를 자기제한하는 침지 단계를 사용하는 것이다. 금을 선택할 경우, 400-450초 동안 도금하면 약 30㎚ 두께의 금이 침착된다. 두꺼운 금속층(0.5-1.5㎛의 두께)을 위한 제 2 단계로서 침지 프로세스는 자동촉매 프로세스 단계로 이어진다.
＊단계(412) : 덤프 린서에서 약 100-180초 동안 세척한다.
＊단계(413) : 약 8-12분 동안 웨이퍼 뒷면의 보호 레지스트를 박리한다.
＊단계(414) : 약 6-8분 동안 스핀 세척하고 건조한다.
본드 패드 캡 제조 프로세스는 단계(415)에서 종료한다.
볼 또는 웨지 본딩 프로세스에 의한 금속 와이어 또는 리본의 후속 금속 접속은 상기와 같다.
이상 본 발명을 도시된 실시예를 참조로 하여 상세히 설명했지만, 상세한 설명은 제한하는 의미로 해석해서는 안된다. 당업자는 상세한 설명의 참조로부터 본 발명의 도시된 실시예 뿐 아니라 다른 실시예의 각종 변형 및 조합이 가능함을 분명히 알 수 있을 것이다. 일례로서, 본 발명은 구리보다는 통상의 볼 또는 웨지 본딩 기법에 의해 본딩하기 어렵거나 불가능한, 예로서 내화금속 및 귀금속의 합금의 IC 본드 패드 배선에 적용할 수 있다. 다른 예로서, 본 발명은 와이어/리본 본딩 및 땜납 상호접속의 히브리드 기술에 사용할 수 있다. 따라서 첨부된 특허청구범위는 그와 같은 어떠한 변형예나 실시예를 포함하고자 하는 것이다.
본 발명에 따라서 제조 사이클 타임을 단축하고, 생산성을 증대시키며, 반면에 고가의 부가적인 제조장비를 필요로 하지 않으면서 많은 반도체 제품 가족과 다수 세대의 제품에 적용할 수 있도록 융통성 있는 디자인과 프로세스 개념을 제공함으로써 서두에서 언급한 종래 기술의 문제점을 극복한다.

Claims (15)

  1. 구리 상호접속 배선을 갖는 집적회로 상에 위치한 금속 와이어와 본드 패드 사이의 금속 접속을 위한 구조물에 있어서,
    비산화 구리의 본드 패드 표면과,
    상기 구리 표면 상에 침착된 구리의 확산을 저지하는 배리어 금속층 - 상기 배리어 금속과 그 두께는 상기 배리어 금속층이 상기 배리어 금속이 존재하지 않을 때와 비교하여 구리의 확산을 250℃에서 80% 이상 감소시키도록 조정함 - 과,
    본딩가능한 금속의 최외부 층 - 상기 최외부 층은 그 두께가 상기 본딩가능한 금속이 존재하지 않을 때와 비교하여 배리어 금속의 확산을 250℃에서 80% 이상 감소시키도록 조정함-과,
    상기 본딩가능한 금속의 최외부 층에 본딩된 상기 금속 와이어 중 한 와이어를 포함하는 구조물.
  2. 제1항에 있어서, 상기 배리어 금속층은 니켈, 코발트, 크롬, 몰리브덴, 티타늄, 텅스텐 및 이들의 합금으로 구성되는 그룹에서 선택되는 구조물.
  3. 제1항에 있어서, 상기 본딩가능한 금속층은 금, 백금, 팔라듐 및 은으로 구성되는 그룹에서 선택되는 구조물.
  4. 제1항에 있어서, 상기 비산화 구리와 상기 배리어 금속층 사이의 얇은 시드 금속층을 더 포함하는 구조물.
  5. 제4항에 있어서, 상기 시드 금속은 팔라듐 또는 주석인 구조물.
  6. 제1항에 있어서, 상기 금속 와이어는 금, 구리, 알루미늄 및 이들의 합금으로 구성되는 그룹에서 선택되는 구조물.
  7. 구리 상호접속 배선을 갖는 집적회로 상에 위치한 금속 와이어와 본드 패드 사이에 금속 접속부를 형성하기 위한 방법에 있어서,
    상기 본드 패드의 상기 구리 배선의 표면을 활성화하여 시드 금속을 침착하는 단계와,
    구리의 확산을 저지하는 배리어 금속층을 무전해 침착으로 도금하는 단계 - 상기 배리어 금속과 그 두께는 상기 배리어 금속층이 상기 배리어 금속이 존재하지 않을 때와 비교하여 구리의 확산을 250℃에서 80%이상 감소시키도록 조정함 - 와,
    본딩가능한 금속층을 무전해 침착으로 도금하는 단계 - 상기 본딩가능한 금속과 그 두께는 본딩가능한 상기 금속층이 상기 본딩가능한 금속이 존재하지 않을 때와 비교하여 구리의 확산을 250℃에서 80% 이상 감소시키도록 조정하여 상기 본드 패드의 본딩가능한 최외부 금속층을 형성함 - 와,
    상기 금속 와이어 중 한 와이어를 상기 최외부 금속 상에 본딩하는 단계를포함하는 방법.
  8. 제7항에 있어서, 상기 와이어 본딩 단계는 볼 본딩 또는 웨지 본딩을 포함하는 방법.
  9. 제7항에 있어서,
    구리 배선을 갖는 표면부분을 포함하는 상기 집적회로의 표면 상에 보호 오버코팅을 침착하는 단계와,
    상기 오버코팅의 선택된 영역을 상기 구리 배선의 표면을 노출시키는 포토리소그래픽 기법으로 개방하는 단계
    를 포함하는 프로세스로 상기 본드 패드를 형성하는 방법.
  10. 제9항에 있어서, 상기 개방 단계 후에, 상기 노출된 구리 표면을 황산, 질산 또는 기타 산의 용액에 침지하는 세정 단계를 더 포함하는 방법.
  11. 제7항에 있어서, 상기 활성화 단계는 본드 패드를 촉매 금속 염화물 용액에 침지하는 단계를 포함하는 방법.
  12. 제11항에 있어서, 상기 금속 염화물은 팔라듐 시드를 침착하는 팔라듐 염화물인 방법.
  13. 제7항에 있어서, 상기 본딩가능한 금속층의 무전해 도금은 침지 도금인 방법.
  14. 제7항에 있어서, 상기 본딩가능한 금속층의 무전해 도금은 침지 도금이고 자동촉매 도금으로 이어지는 방법.
  15. 제7항에 있어서, 상기 본딩 단계 전에 상기 본드 패드의 상기 최외부 금속을 전기적으로 프로빙하여 실질적으로 프로브 마크를 남기지 않는 단계를 더 포함하는 방법.
KR1020010015120A 2000-03-24 2001-03-23 구리 배선 집적 회로의 와이어 본딩 프로세스 KR100741592B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19210800P 2000-03-24 2000-03-24
US60/192,108 2000-03-24

Publications (2)

Publication Number Publication Date
KR20010090525A true KR20010090525A (ko) 2001-10-18
KR100741592B1 KR100741592B1 (ko) 2007-07-20

Family

ID=22708278

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010015120A KR100741592B1 (ko) 2000-03-24 2001-03-23 구리 배선 집적 회로의 와이어 본딩 프로세스

Country Status (6)

Country Link
US (2) US6800555B2 (ko)
EP (1) EP1139413B1 (ko)
JP (1) JP2001319946A (ko)
KR (1) KR100741592B1 (ko)
CN (1) CN1245272C (ko)
DE (1) DE60109339T2 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100833187B1 (ko) * 2006-11-02 2008-05-28 삼성전자주식회사 반도체 패키지의 와이어 본딩방법
KR101339517B1 (ko) * 2006-02-23 2013-12-10 프리스케일 세미컨덕터, 인크. 알루미늄 구리 본드 패드를 위한 캡 층

Families Citing this family (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6495442B1 (en) 2000-10-18 2002-12-17 Magic Corporation Post passivation interconnection schemes on top of the IC chips
US6965165B2 (en) * 1998-12-21 2005-11-15 Mou-Shiung Lin Top layers of metal for high performance IC's
US8021976B2 (en) 2002-10-15 2011-09-20 Megica Corporation Method of wire bonding over active area of a semiconductor circuit
US6936531B2 (en) * 1998-12-21 2005-08-30 Megic Corporation Process of fabricating a chip structure
US7381642B2 (en) * 2004-09-23 2008-06-03 Megica Corporation Top layers of metal for integrated circuits
US7405149B1 (en) 1998-12-21 2008-07-29 Megica Corporation Post passivation method for semiconductor chip or wafer
US6898849B2 (en) 2000-09-27 2005-05-31 Texas Instruments Incorporated Method for controlling wire balls in electronic bonding
US7372161B2 (en) * 2000-10-18 2008-05-13 Megica Corporation Post passivation interconnection schemes on top of the IC chips
US7271489B2 (en) 2003-10-15 2007-09-18 Megica Corporation Post passivation interconnection schemes on top of the IC chips
US6683383B2 (en) 2001-10-18 2004-01-27 Intel Corporation Wirebond structure and method to connect to a microelectronic die
US7932603B2 (en) 2001-12-13 2011-04-26 Megica Corporation Chip structure and process for forming the same
EP2273544A3 (en) * 2001-12-14 2011-10-26 STMicroelectronics S.r.l. Semiconductor electronic device and method of manufacturing thereof
US20030127716A1 (en) * 2002-01-09 2003-07-10 Taiwan Semiconductor Manufacturing Co., Ltd. Single layer wiring bond pad with optimum AL film thickness in Cu/FSG process for devices under pads
US6616967B1 (en) * 2002-04-15 2003-09-09 Texas Instruments Incorporated Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process
US6619538B1 (en) * 2002-05-02 2003-09-16 Texas Instruments Incorporated Nickel plating process having controlled hydrogen concentration
JP4457587B2 (ja) * 2002-09-05 2010-04-28 セイコーエプソン株式会社 電子デバイス用基体の製造方法及び電子デバイスの製造方法
US7288845B2 (en) * 2002-10-15 2007-10-30 Marvell Semiconductor, Inc. Fabrication of wire bond pads over underlying active devices, passive devices and/or dielectric layers in integrated circuits
TWI221026B (en) * 2002-12-06 2004-09-11 Nat Univ Chung Cheng Method of thermosonic wire bonding process for copper connection in a chip
TWI238513B (en) 2003-03-04 2005-08-21 Rohm & Haas Elect Mat Coaxial waveguide microstructures and methods of formation thereof
US7319277B2 (en) * 2003-05-08 2008-01-15 Megica Corporation Chip structure with redistribution traces
US6969638B2 (en) * 2003-06-27 2005-11-29 Texas Instruments Incorporated Low cost substrate for an integrated circuit device with bondpads free of plated gold
US20050067382A1 (en) * 2003-09-26 2005-03-31 Gary Gillotti Fine pitch electronic flame-off wand electrode
US7459790B2 (en) * 2003-10-15 2008-12-02 Megica Corporation Post passivation interconnection schemes on top of the IC chips
US7394161B2 (en) 2003-12-08 2008-07-01 Megica Corporation Chip structure with pads having bumps or wirebonded wires formed thereover or used to be tested thereto
US20050215048A1 (en) * 2004-03-23 2005-09-29 Lei Li Structure and method for contact pads having an overcoat-protected bondable metal plug over copper-metallized integrated circuits
TWI283443B (en) 2004-07-16 2007-07-01 Megica Corp Post-passivation process and process of forming a polymer layer on the chip
GB2417127A (en) * 2004-08-12 2006-02-15 Vetco Gray Controls Ltd Surface metallization of contact pads
US7833896B2 (en) * 2004-09-23 2010-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Aluminum cap for reducing scratch and wire-bond bridging of bond pads
DE102004047522B3 (de) 2004-09-28 2006-04-06 Infineon Technologies Ag Halbleiterchip mit einer Metallbeschichtungsstruktur und Verfahren zur Herstellung desselben
US7521805B2 (en) * 2004-10-12 2009-04-21 Megica Corp. Post passivation interconnection schemes on top of the IC chips
TWI269420B (en) 2005-05-03 2006-12-21 Megica Corp Stacked chip package and process thereof
US7216794B2 (en) 2005-06-09 2007-05-15 Texas Instruments Incorporated Bond capillary design for ribbon wire bonding
US7326640B2 (en) * 2005-07-13 2008-02-05 National Chung Cheng University Method of realizing thermosonic wire bonding between metal wires and copper pads by depositing a thin film to surface of semiconductor chip with copper pads
US7413974B2 (en) * 2005-08-04 2008-08-19 Texas Instruments Incorporated Copper-metallized integrated circuits having electroless thick copper bond pads
US7947978B2 (en) * 2005-12-05 2011-05-24 Megica Corporation Semiconductor chip with bond area
JP4793006B2 (ja) * 2006-02-09 2011-10-12 ソニー株式会社 半導体装置及びその製造方法
US8344524B2 (en) * 2006-03-07 2013-01-01 Megica Corporation Wire bonding method for preventing polymer cracking
US7800228B2 (en) * 2006-05-17 2010-09-21 International Business Machines Corporation Reliable via contact interconnect structure
US8420520B2 (en) * 2006-05-18 2013-04-16 Megica Corporation Non-cyanide gold electroplating for fine-line gold traces and gold pads
US8421227B2 (en) * 2006-06-28 2013-04-16 Megica Corporation Semiconductor chip structure
US7960825B2 (en) * 2006-09-06 2011-06-14 Megica Corporation Chip package and method for fabricating the same
DE102006044691B4 (de) * 2006-09-22 2012-06-21 Infineon Technologies Ag Verfahren zum Herstellen einer Anschlussleitstruktur eines Bauelements
KR100843705B1 (ko) * 2006-11-17 2008-07-04 삼성전자주식회사 금속 범프를 갖는 반도체 칩 패키지 및 그 제조방법
US20080116077A1 (en) * 2006-11-21 2008-05-22 M/A-Com, Inc. System and method for solder bump plating
CN101274734A (zh) 2006-12-30 2008-10-01 罗门哈斯电子材料有限公司 三维微结构及其形成方法
US8193636B2 (en) 2007-03-13 2012-06-05 Megica Corporation Chip assembly with interconnection by metal bump
EP1973189B1 (en) 2007-03-20 2012-12-05 Nuvotronics, LLC Coaxial transmission line microstructures and methods of formation thereof
US7755174B2 (en) 2007-03-20 2010-07-13 Nuvotonics, LLC Integrated electronic components and methods of formation thereof
TWI347643B (en) 2007-06-13 2011-08-21 Advanced Semiconductor Eng Under bump metallurgy structure and die structure using the same and method of manufacturing die structure
US7911061B2 (en) * 2007-06-25 2011-03-22 Infineon Technologies Ag Semiconductor device
TWI368286B (en) 2007-08-27 2012-07-11 Megica Corp Chip assembly
DE102007046556A1 (de) * 2007-09-28 2009-04-02 Infineon Technologies Austria Ag Halbleiterbauelement mit Kupfermetallisierungen
US8357998B2 (en) * 2009-02-09 2013-01-22 Advanced Semiconductor Engineering, Inc. Wirebonded semiconductor package
US20110123783A1 (en) 2009-11-23 2011-05-26 David Sherrer Multilayer build processses and devices thereof
JP5639194B2 (ja) * 2010-01-22 2014-12-10 ヌボトロニクス，エルエルシー 熱制御
US8917150B2 (en) * 2010-01-22 2014-12-23 Nuvotronics, Llc Waveguide balun having waveguide structures disposed over a ground plane and having probes located in channels
US8394713B2 (en) * 2010-02-12 2013-03-12 Freescale Semiconductor, Inc. Method of improving adhesion of bond pad over pad metallization with a neighboring passivation layer by depositing a palladium layer
JP2011216771A (ja) 2010-04-01 2011-10-27 Rohm Co Ltd 半導体装置およびその製造方法
US8610274B2 (en) * 2010-09-14 2013-12-17 Infineon Technologies Ag Die structure, die arrangement and method of processing a die
KR101184796B1 (ko) * 2010-12-29 2012-09-20 와이엠티 주식회사 기판 구조물 및 그 제조 방법
CN102605359A (zh) * 2011-01-25 2012-07-25 台湾上村股份有限公司 化学钯金镀膜结构及其制作方法、铜线或钯铜线接合的钯金镀膜封装结构及其封装工艺
JP2012160554A (ja) * 2011-01-31 2012-08-23 Toshiba Corp ボンディングワイヤの接合構造及び接合方法
US8866300B1 (en) 2011-06-05 2014-10-21 Nuvotronics, Llc Devices and methods for solder flow control in three-dimensional microstructures
US8814601B1 (en) 2011-06-06 2014-08-26 Nuvotronics, Llc Batch fabricated microconnectors
FR2977383A1 (fr) * 2011-06-30 2013-01-04 St Microelectronics Grenoble 2 Plot de reception d'un fil de cuivre
WO2013010108A1 (en) 2011-07-13 2013-01-17 Nuvotronics, Llc Methods of fabricating electronic and mechanical structures
US8618677B2 (en) 2012-04-06 2013-12-31 Advanced Semiconductor Engineering, Inc. Wirebonded semiconductor package
US9325044B2 (en) 2013-01-26 2016-04-26 Nuvotronics, Inc. Multi-layer digital elliptic filter and method
JP2013128145A (ja) * 2013-03-11 2013-06-27 Rohm Co Ltd 半導体装置
US9306255B1 (en) 2013-03-15 2016-04-05 Nuvotronics, Inc. Microstructure including microstructural waveguide elements and/or IC chips that are mechanically interconnected to each other
US9306254B1 (en) 2013-03-15 2016-04-05 Nuvotronics, Inc. Substrate-free mechanical interconnection of electronic sub-systems using a spring configuration
US9627344B2 (en) 2013-04-04 2017-04-18 Rohm Co., Ltd. Semiconductor device
EP3095159A4 (en) 2014-01-17 2017-09-27 Nuvotronics, Inc. Wafer scale test interface unit: low loss and high isolation devices and methods for high speed and high density mixed signal interconnects and contactors
MY171264A (en) 2014-03-28 2019-10-07 Nxp Usa Inc Wire bonding method employing two scrub settings
KR102284123B1 (ko) 2014-05-26 2021-07-30 삼성전기주식회사 회로기판, 전자부품 및 회로기판 제조방법
US9368340B2 (en) * 2014-06-02 2016-06-14 Lam Research Corporation Metallization of the wafer edge for optimized electroplating performance on resistive substrates
KR102207274B1 (ko) 2014-06-11 2021-01-25 삼성전기주식회사 회로기판 및 회로기판 제조방법
US9613843B2 (en) 2014-10-13 2017-04-04 General Electric Company Power overlay structure having wirebonds and method of manufacturing same
US10847469B2 (en) 2016-04-26 2020-11-24 Cubic Corporation CTE compensation for wafer-level and chip-scale packages and assemblies
US10511073B2 (en) 2014-12-03 2019-12-17 Cubic Corporation Systems and methods for manufacturing stacked circuits and transmission lines
US9960130B2 (en) 2015-02-06 2018-05-01 UTAC Headquarters Pte. Ltd. Reliable interconnect
JP6931869B2 (ja) * 2016-10-21 2021-09-08 国立研究開発法人産業技術総合研究所 半導体装置
JP6872991B2 (ja) * 2017-06-29 2021-05-19 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US10424552B2 (en) * 2017-09-20 2019-09-24 Texas Instruments Incorporated Alloy diffusion barrier layer
US10319654B1 (en) 2017-12-01 2019-06-11 Cubic Corporation Integrated chip scale packages
JP6937283B2 (ja) * 2018-09-19 2021-09-22 株式会社東芝 半導体装置の製造方法
US11270963B2 (en) 2020-01-14 2022-03-08 Sandisk Technologies Llc Bonding pads including interfacial electromigration barrier layers and methods of making the same
CN112216675A (zh) * 2020-09-11 2021-01-12 中国电子科技集团公司第十三研究所 微组装基板结构及芯片微组装方法
US11676920B2 (en) * 2021-01-26 2023-06-13 United Microelectronics Corp. Semiconductor device and method for fabricating the same

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2184288A (en) * 1985-12-16 1987-06-17 Nat Semiconductor Corp Oxidation inhibition of copper bonding pads using palladium
DE3785720T2 (de) * 1986-09-25 1993-08-12 Toshiba Kawasaki Kk Verfahren zum herstellen eines filmtraegers.
US4970571A (en) * 1987-09-24 1990-11-13 Kabushiki Kaisha Toshiba Bump and method of manufacturing the same
US4985076A (en) * 1989-11-03 1991-01-15 General Electric Company Autocatalytic electroless gold plating composition
US5291374A (en) * 1990-12-17 1994-03-01 Kabushiki Kaisha Toshiba Semiconductor device having an opening and method of manufacturing the same
US6094058A (en) * 1991-06-04 2000-07-25 Micron Technology, Inc. Temporary semiconductor package having dense array external contacts
US5212138A (en) * 1991-09-23 1993-05-18 Applied Electroless Concepts Inc. Low corrosivity catalyst for activation of copper for electroless nickel plating
EP0567937A3 (en) * 1992-04-30 1993-12-08 Texas Instruments Incorporated High reliability die processing
US5380560A (en) * 1992-07-28 1995-01-10 International Business Machines Corporation Palladium sulfate solution for the selective seeding of the metal interconnections on polyimide dielectrics for electroless metal deposition
US5436412A (en) * 1992-10-30 1995-07-25 International Business Machines Corporation Interconnect structure having improved metallization
US5821627A (en) * 1993-03-11 1998-10-13 Kabushiki Kaisha Toshiba Electronic circuit device
US5656858A (en) * 1994-10-19 1997-08-12 Nippondenso Co., Ltd. Semiconductor device with bump structure
DE4442960C1 (de) * 1994-12-02 1995-12-21 Fraunhofer Ges Forschung Lothöcker für die Flip-Chip-Montage und Verfahren zu dessen Herstellung
JP3296400B2 (ja) * 1995-02-01 2002-06-24 東芝マイクロエレクトロニクス株式会社 半導体装置、その製造方法およびＣｕ製リード
JP3362545B2 (ja) * 1995-03-09 2003-01-07 ソニー株式会社 半導体装置の製造方法
US5922517A (en) * 1996-06-12 1999-07-13 International Business Machines Corporation Method of preparing a substrate surface for conformal plating
US5801452A (en) * 1996-10-25 1998-09-01 Micron Technology, Inc. Multi chip module including semiconductor wafer or dice, interconnect substrate, and alignment member
US5766979A (en) * 1996-11-08 1998-06-16 W. L. Gore & Associates, Inc. Wafer level contact sheet and method of assembly
US6016060A (en) * 1997-03-25 2000-01-18 Micron Technology, Inc. Method, apparatus and system for testing bumped semiconductor components
US5910644A (en) * 1997-06-11 1999-06-08 International Business Machines Corporation Universal surface finish for DCA, SMT and pad on pad interconnections
US6040239A (en) * 1997-08-22 2000-03-21 Micron Technology, Inc. Non-oxidizing touch contact interconnect for semiconductor test systems and method of fabrication
US6097087A (en) * 1997-10-31 2000-08-01 Micron Technology, Inc. Semiconductor package including flex circuit, interconnects and dense array external contacts
JPH11140658A (ja) 1997-11-05 1999-05-25 Hitachi Chem Co Ltd 半導体搭載用基板とその製造方法
US6107180A (en) * 1998-01-30 2000-08-22 Motorola, Inc. Method for forming interconnect bumps on a semiconductor die
KR19990083024A (ko) * 1998-04-08 1999-11-25 윌리엄 비. 켐플러 구리 메탈리제이션를 위한 ｐｏ 플로우
US5937320A (en) * 1998-04-08 1999-08-10 International Business Machines Corporation Barrier layers for electroplated SnPb eutectic solder joints
US6320263B1 (en) * 1999-02-18 2001-11-20 Advanced Micro Devices, Inc. Semiconductor metalization barrier and manufacturing method therefor
US6362089B1 (en) * 1999-04-19 2002-03-26 Motorola, Inc. Method for processing a semiconductor substrate having a copper surface disposed thereon and structure formed
GB9914936D0 (en) * 1999-06-26 1999-08-25 Cerestar Holding Bv Directly compressible starch as enhancer of properties of excipients when used as binder and disintegrant for compression tablets
US6306751B1 (en) * 1999-09-27 2001-10-23 Lsi Logic Corporation Apparatus and method for improving ball joints in semiconductor packages
US6310263B1 (en) * 1999-11-08 2001-10-30 Dotolo Research Ltd. Heavy oil remover
US20010033020A1 (en) * 2000-03-24 2001-10-25 Stierman Roger J. Structure and method for bond pads of copper-metallized integrated circuits
US6445069B1 (en) * 2001-01-22 2002-09-03 Flip Chip Technologies, L.L.C. Electroless Ni/Pd/Au metallization structure for copper interconnect substrate and method therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101339517B1 (ko) * 2006-02-23 2013-12-10 프리스케일 세미컨덕터, 인크. 알루미늄 구리 본드 패드를 위한 캡 층
KR100833187B1 (ko) * 2006-11-02 2008-05-28 삼성전자주식회사 반도체 패키지의 와이어 본딩방법

Also Published As

Publication number Publication date
EP1139413B1 (en) 2005-03-16
US6800555B2 (en) 2004-10-05
KR100741592B1 (ko) 2007-07-20
JP2001319946A (ja) 2001-11-16
EP1139413A3 (en) 2002-06-12
CN1245272C (zh) 2006-03-15
US20010035452A1 (en) 2001-11-01
EP1139413A2 (en) 2001-10-04
US20050106851A1 (en) 2005-05-19
CN1317389A (zh) 2001-10-17
DE60109339D1 (de) 2005-04-21
DE60109339T2 (de) 2006-01-12

Similar Documents

Publication Publication Date Title
KR100741592B1 (ko) 구리 배선 집적 회로의 와이어 본딩 프로세스
US20010033020A1 (en) Structure and method for bond pads of copper-metallized integrated circuits
EP1126519A2 (en) Structure and method for bond pads of copper-metallized intergrated circuits
US6384486B2 (en) Bonding over integrated circuits
US7045903B2 (en) Integrated power circuits with distributed bonding and current flow
US7514292B2 (en) Individualized low parasitic power distribution lines deposited over active integrated circuits
US7060607B2 (en) Circuit method integrating the power distribution functions of the circuits and leadframes into the chip surface
US20040084511A1 (en) Method to achieve continuous hydrogen saturation in sparingly used electroless nickel plating process
JP2012169663A (ja) 能動集積回路上のボンディングのためのシステム及び方法
KR20040018248A (ko) 집적 회로 구조체와 그 마련 공정
US7413974B2 (en) Copper-metallized integrated circuits having electroless thick copper bond pads
CN1957455A (zh) 在铜金属化集成电路之上具有保护性防护层可焊金属接头的接触点的结构和方法
US6435398B2 (en) Method for chemically reworking metal layers on integrated circuit bond pads
US6619538B1 (en) Nickel plating process having controlled hydrogen concentration
JPS6322464B2 (ko)
WO2005062367A1 (en) I/o sites for probe test and wire bond
JPS61272941A (ja) 半導体基板の結合方法
CN103681595B (zh) 半导体集成电路器件

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20130628

Year of fee payment: 7

FPAY Annual fee payment

Payment date: 20140627

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20160629

Year of fee payment: 10

FPAY Annual fee payment

Payment date: 20180628

Year of fee payment: 12