JP6937283B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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JP6937283B2
JP6937283B2 JP2018175444A JP2018175444A JP6937283B2 JP 6937283 B2 JP6937283 B2 JP 6937283B2 JP 2018175444 A JP2018175444 A JP 2018175444A JP 2018175444 A JP2018175444 A JP 2018175444A JP 6937283 B2 JP6937283 B2 JP 6937283B2
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metal layer
manufacturing
semiconductor device
gold
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JP2020047794A (ja
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浩明 高橋
浩明 高橋
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Priority to US16/286,334 priority patent/US10658272B2/en
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Description

本発明の実施形態は、半導体装置の製造方法に関する。
半導体チップ上の電極パッドとリードフレームなどの外部電極とを接続するために、ボンディングワイヤが用いられる。ボンディングワイヤの一端が電極パッドに接続され、他端が外部電極に接続される。ボンディングワイヤの信頼性を向上させるために、例えば、電極パッドの表面に耐酸化性が高く安定した金を含む金属層を用いる。しかし、金の下地となる金属層と金を含む金属層の密着性が低下することにより、ボンディング歩留りが低下する場合がある。
特開２００６−２７９０３４号公報
本発明が解決しようとする課題は、密着性の高い金属積層構造を有する半導体装置の製造方法を提供することにある。
本発明の一態様の半導体装置の製造方法は、第１の金属層の上に、ニッケルを含む第２の金属層を形成し、前記第２の金属層に対し１重量％未満の濃度の希釈塩酸で第１の洗浄処理を行い、前記第２の金属層の上に金を含む第３の金属層を形成する。
実施形態の半導体装置の製造方法で製造される半導体装置の模式断面図。 実施形態の半導体装置の製造方法で製造される半導体装置の拡大模式断面図。 実施形態の半導体装置の製造方法の模式断面図。 実施形態の半導体装置の製造方法の模式断面図。 実施形態の半導体装置の製造方法の模式断面図。 実施形態の半導体装置の製造方法の模式断面図。 実施形態の半導体装置の製造方法の模式断面図。 実施形態の半導体装置の製造方法の模式断面図。 実施形態の半導体装置の製造方法の模式断面図。
本明細書中、同一又は類似する部材については、同一の符号を付し、重複する説明を省略する場合がある。
本明細書中、部品等の位置関係を示すために、図面の上方向を「上」、図面の下方向を「下」と記述する場合がある。本明細書中、「上」、「下」の概念は、必ずしも重力の向きとの関係を示す用語ではない。
実施形態の半導体装置の製造方法は、第１の金属層の上に、めっき法によりニッケルを含む第２の金属層を形成し、第２の金属層に対し１重量％未満の濃度の希釈塩酸で第１の洗浄処理を行い、第２の金属層の上に金を含む第３の金属層を形成する。
図１は、実施形態の半導体装置の製造方法で製造される半導体装置の模式断面図である。実施形態の半導体装置の製造方法で製造される半導体装置１００は、半導体チップ１０、リードフレーム１１、ボンディングワイヤ１２、はんだ層１３を含む。
半導体チップ１０は、はんだ層１３によって、リードフレーム１１に固定される。また、半導体チップ１０は、ボンディングワイヤ１２によって、リードフレーム１１に電気的に接続される。
ボンディングワイヤ１２の一端が半導体チップ１０の表面に設けられる図示しない電極パッドに接続される。ボンディングワイヤ１２の他端がリードフレーム１１に接続される。
ボンディングワイヤ１２は、例えば、銅ワイヤ、金ワイヤ、アルミワイヤ、又は、パラジウムで被覆された銅ワイヤである。
図２は、実施形態の半導体装置の製造方法で製造される半導体装置の拡大模式断面図である。図２は、図１の点線枠で囲まれる部分の拡大図である。図２は、半導体チップ１０のボンディングワイヤ１２が接続される電極パッドを含む図である。
半導体チップ１０は、シリコン基板２０、層間絶縁層２２、保護絶縁層２４、コンタクト電極２６、銅を含む金属層３０（第１の金属層）、ニッケルを含む金属層３２（第２の金属層）、パラジウムを含む金属層３４（第４の金属層）、金を含む金属層３６（第３の金属層）を備える。
シリコン基板２０は、単結晶のシリコン基板である。シリコン基板２０には、例えば、図示しないトランジスタやダイオードなどの半導体素子が形成されている。
層間絶縁層２２は、シリコン基板２０の上に設けられる。層間絶縁層２２は、例えば、酸化シリコンを含む。
保護絶縁層２４は、層間絶縁層２２の上に設けられる。保護絶縁層２４は、例えば、酸化シリコン層と窒化シリコン層との積層構造を有する。
銅を含む金属層３０、ニッケルを含む金属層３２、パラジウムを含む金属層３４、金を含む金属層３６は、半導体チップ１０の電極パッドを構成する。銅を含む金属層３０、ニッケルを含む金属層３２、パラジウムを含む金属層３４、金を含む金属層３６は、例えば、半導体チップ１０の保護絶縁層２４の上に形成された再配線（Ｒｅ Ｄｉｓｔｒｉｂｕｔｉｏｎ． Ｌａｙｅｒ）である。
銅を含む金属層３０は、保護絶縁層２４の上に設けられる。銅を含む金属層３０は、コンタクト電極２６に接する。
銅を含む金属層３０は、コンタクト電極２６を介してシリコン基板２０に電気的に接続される。銅を含む金属層３０は、例えば、銅を主成分とする。銅を主成分とするとは、銅を含む金属層３０を構成する元素のうち、最も原子割合の高い元素であることを意味する。銅を含む金属層３０の厚さは、例えば、５μｍ以上２０μｍ以下である。
ニッケルを含む金属層３２は、銅を含む金属層３０の上に設けられる。ニッケルを含む金属層３２は、銅を含む金属層３０に接する。
ニッケルを含む金属層３２は、例えば、銅の拡散を抑制する機能を有する。ニッケルを含む金属層３２は、例えば、ニッケルを主成分とする。ニッケルを含む金属層３２の厚さは、例えば、１μｍ以上２μｍ以下である。
パラジウムを含む金属層３４は、ニッケルを含む金属層３２の上に設けられる。パラジウムを含む金属層３４は、ニッケルを含む金属層３２に接する。
パラジウムを含む金属層３４は、例えば、ニッケルの拡散を抑制する機能を有する。パラジウムを含む金属層３４は、例えば、パラジウムを主成分とする。パラジウムを含む金属層３４厚さは、例えば、０．１μｍ以上０．３μｍ以下である。
金を含む金属層３６は、パラジウムを含む金属層３４の上に設けられる。金を含む金属層３６は、パラジウムを含む金属層３４に接する。
金を含む金属層３６は、例えば、ボンディングワイヤ１２の密着性を向上させる機能を有する。金を含む金属層３６の厚さは、例えば、０．５μｍ以上２μｍ以下である。
ボンディングワイヤ１２は、金を含む金属層３６の表面に接続される。
次に、実施形態の半導体装置の製造方法について説明する。図３、図４、図５、図６、図７、図８、及び、図９は、実施形態の半導体装置の製造方法の模式断面図である。
まず、公知のプロセス技術を用いて、シリコン基板２０の上に層間絶縁層２２を形成する。次に、公知のプロセス技術を用いて、層間絶縁層２２にシリコン基板２０に達するコンタクトホールを形成し、コンタクトホールにコンタクト電極２６を形成する。
次に、公知のプロセス技術を用いて、層間絶縁層２２上、及び、コンタクト電極２６の上に保護絶縁層２４を形成する。次に、公知のプロセス技術を用いて、保護絶縁層２４に開口部を開口する（図３）。
次に、図示しないめっき用のシード層を保護絶縁層２４上及びコンタクト電極２６上に形成する。シード層は、例えば、公知のスパッタ法で形成されるチタンと銅を含む膜である。次に、公知のリソグラフィ法を用いて、レジスト４０をパターニングする（図４）。
次に、例えば、公知の電解めっき法により、レジスト４０の開口部に、銅を含む金属層３０を形成する（図５）。
次に、例えば、公知の電解めっき法により、レジスト４０の開口部の、銅を含む金属層３０の上にニッケルを含む金属層３２を形成する（図６）。
次に、例えば、ニッケルを含む金属層３２に対し、純水による洗浄処理を行う。純水による洗浄処理により、残存するめっき液を除去する。
次に、ニッケルを含む金属層３２に対し、１重量％未満の濃度の希釈塩酸で第１の洗浄処理を行う。第１の洗浄処理により、ニッケルを含む金属層３２の表面に形成された自然酸化膜を除去する。
第１の洗浄処理の希釈塩酸の塩酸濃度は、例えば、０．０１重量％以上１重量％未満である。第１の洗浄処理の時間は、例えば、２０秒以上１２０秒以下である。
次に、例えば、公知の電解めっき法により、レジスト４０の開口部の、ニッケルを含む金属層３２の上にパラジウムを含む金属層３４を形成する（図７）。
次に、例えば、パラジウムを含む金属層３４に対し、純水による洗浄処理を行う。純水による洗浄処理により、残存するめっき液を除去する。
次に、パラジウムを含む金属層３４に対し、１重量％未満の濃度の希釈塩酸で第２の洗浄処理を行う。第２の洗浄処理により、パラジウムを含む金属層３４の表面に形成された自然酸化膜を除去する。
第２の洗浄処理の希釈塩酸の塩酸濃度は、例えば、０．０１重量％以上１重量％未満である。第２の洗浄処理の時間は、例えば、２０秒以上１２０秒以下である。
次に、例えば、公知の電解めっき法により、レジスト４０の開口部の、パラジウムを含む金属層３４の上に金を含む金属層３６を形成する（図８）。
次に、例えば、金を含む金属層３６に対し、純水による洗浄処理を行う。純水による洗浄処理により、残存するめっき液を除去する。
次に、レジスト４０を剥離し、保護絶縁層２４の上に残存するシード層を公知のエッチングにより除去する（図９）。
次に、半導体チップ１０を、リードフレーム１１の上にはんだ層１３を用いて固定する。
次に、金を含む金属層３６の表面に、公知のワイヤボンダーを用いて、ボンディングワイヤ１２を接続する。
以上の製造方法により、図１及び図２に示す半導体装置１００が製造される。
次に、実施形態の半導体装置の製造方法の作用及び効果について説明する。
ボンディングワイヤの信頼性を向上させるために、電極パッドの表面に耐酸化性が高く安定した金を含む金属層を用いる場合がある。しかし、金を含む金属層の下地となる金属層と金を含む金属層の密着性が低下することにより、ボンディング歩留りが低下する場合がある。
金を含む金属層の下地となる金属層と金の密着性が低下すると、例えば、電極パッドの表面にボンディングワイヤを接続する際、電極パッドの膜剥がれが生じ、ボンディング不良となる。
発明者の検討により、金を含む金属層の下地となるニッケルを含む金属層の表面に自然酸化膜が存在することにより、金を含む金属層の密着性が低下することが明らかになった。
実施形態の半導体装置の製造方法は、ニッケルを含む金属層３２の形成後に、ニッケルを含む金属層３２に対し、１重量％未満の濃度の希釈塩酸で第１の洗浄処理を行う。第１の洗浄処理により、ニッケルを含む金属層３２の表面に形成された自然酸化膜を除去する。
したがって、ニッケルを含む金属層３２とパラジウムを含む金属層３４との間の密着性が向上する。結果的に金を含む金属層３６の密着性が向上する。
第１の洗浄処理の希釈塩酸の塩酸濃度は、０．０１重量％以上１重量％未満であることが好ましく、０．０１重量％以上０．８重量％以下であることがより好ましく、０．１重量％以上０．５重量％以下であることが更に好ましく、０．１重量％以上０．３重量％以下であることが最も好ましい。上記範囲を充足することにより、自然酸化膜の除去効率が向上する。
第１の洗浄処理の希釈塩酸の塩酸濃度が１重量％を超えると、希釈塩酸の中の活性酸素量が増大し、第１の洗浄処理中に、ニッケルを含む金属層３２の表面の酸化が進行する。したがって、第１の洗浄処理の希釈塩酸の塩酸濃度が１重量％を超えることは好ましくない。
第１の洗浄処理の時間は、２０秒以上１２０秒以下であることが好ましい。上記範囲を充足することにより、自然酸化膜の除去効率が向上する。
以上、実施形態の半導体装置の製造方法によれば、電極パッドの金を含む金属層の密着性が向上する。したがって、密着性の高い金属積層構造を有する半導体装置の製造方法が実現される。よって、ボンディング歩留りの高い半導体装置が実現できる。
実施形態では、第１の金属層が銅を含む金属層３０である場合を例に説明したが、第１の金属層は、その他の金属を含む金属層、例えば、アルミニウムを含む金属層であっても構わない。
実施形態では、第４の金属層がパラジウムを含む金属層３４である場合を例に説明したが、第４の金属層は、その他の金属を含む金属層、例えば、白金を含む金属層であっても構わない。
実施形態では、金を含む金属層３６の上にボンディングワイヤを接続する場合を例に説明したが、例えば、金を含む金属層３６の上に、その他の接続用部材、例えば、はんだボールなどが接続される場合にも、本発明を適用することが可能である。
実施形態では、第１乃至第４の金属層の形成を電界めっき法でおこなう場合を例に説明したが、無電界めっき法でおこなっても構わない。また、めっき法以外の方法、例えばスパッタリング法、蒸着法等でおこなうことも考えられる。
本発明のいくつかの実施形態を説明したが、これらの実施形態は、例として提示したものであり、発明の範囲を限定することは意図していない。これら新規な実施形態は、その他の様々な形態で実施されることが可能であり、発明の要旨を逸脱しない範囲で、種々の省略、置き換え、変更を行うことができる。例えば、一実施形態の構成要素を他の実施形態の構成要素と置き換え又は変更してもよい。これら実施形態やその変形は、発明の範囲や要旨に含まれるとともに、特許請求の範囲に記載された発明とその均等の範囲に含まれる。
１２ ボンディングワイヤ
３０ 銅を含む金属層（第１の金属層）
３２ ニッケルを含む金属層（第２の金属層）
３４ パラジウムを含む金属層（第４の金属層）
３６ 金を含む金属層（第３の金属層）

Claims (7)

  1. 第１の金属層の上に、ニッケルを含む第２の金属層を形成し、
    前記第２の金属層に対し１重量％未満の濃度の希釈塩酸で第１の洗浄処理を行い、
    前記第２の金属層の上に金を含む第３の金属層を形成する半導体装置の製造方法。
  2. 前記第１の金属層は銅を含む請求項１記載の半導体装置の製造方法。
  3. 前記第２の金属層と前記第３の金属層との間に、パラジウム又は白金を含む第４の金属層を形成する請求項１又は請求項２記載の半導体装置の製造方法。
  4. 前記第４の金属層に対し１重量％未満の希釈塩酸で第２の洗浄処理を行う請求項３記載の半導体装置の製造方法。
  5. 前記第３の金属層にボンディングワイヤを接続する請求項１ないし請求項４記載の半導体装置の製造方法。
  6. 前記第１の洗浄処理の時間は２０秒以上１２０秒以下である請求項１ないし請求項５いずれか一項記載の半導体装置の製造方法。
  7. 前記第１の洗浄処理は０．５重量％以下の濃度の希釈塩酸で行う請求項１ないし請求項６いずれか一項記載の半導体装置の製造方法。


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