JP2001319946A - 銅電極集積回路のためのワイヤ・ボンデイング構造及びその方法 - Google Patents

銅電極集積回路のためのワイヤ・ボンデイング構造及びその方法

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Publication number
JP2001319946A
JP2001319946A JP2001085103A JP2001085103A JP2001319946A JP 2001319946 A JP2001319946 A JP 2001319946A JP 2001085103 A JP2001085103 A JP 2001085103A JP 2001085103 A JP2001085103 A JP 2001085103A JP 2001319946 A JP2001319946 A JP 2001319946A
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Japan
Prior art keywords
metal
copper
layer
diffusion
barrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
JP2001085103A
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English (en)
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JP2001319946A5 (ja
Inventor
Howard R Test
アール テスト ホワード
Gonzalo Amador
アマンドー ゴンザロ
Willmar E Subido
イー スビド ウィリアム
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Texas Instruments Inc
Original Assignee
Texas Instruments Inc
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Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JP2001319946A publication Critical patent/JP2001319946A/ja
Publication of JP2001319946A5 publication Critical patent/JP2001319946A5/ja
Abandoned legal-status Critical Current

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    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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Abstract

(57)【要約】 （修正有） 【課題】 集積回路の銅相互接続電極に電気的なワイヤ
／リボン接着を可能にする頑健で、信頼性の高い、そし
て低コストの金属構造及び方法を提供する。 【解決手段】 本発明の構造は、無酸化銅１０３表面上
に堆積された銅拡散に抵抗する障壁金属の層１０５で、
その厚さが障壁金属が存在しない場合に比較して２５０
℃において８０パーセント以上の銅の拡散を減少する障
壁層１０５を有する。この構造はさらに最外の接着可能
金属層１０６を有し、この接着可能金属層が存在しない
場合に比較して２５０℃において８０パーセント以上の
障壁金属の拡散を減少する。最後に、金属ワイヤ１１０
が最外層に接着されて、金属的接着を行なう。障壁金属
は、ニッケル、コバルト、クロム、モリブデン、チタ
ン、タングステン、及びこれらの合金から成るグループ
から選択される。最外層の接着可能金属は、金、白金、
及び銀から成るグループから選択される。

Description

【発明の詳細な説明】
【０００１】
【発明の属する技術分野】本発明は、一般に、半導体装
置及び方法の分野に関し、詳細には、銅電極（メタライ
ゼーション）集積回路のボンド・パッドへのワイヤ・ボ
ンデイングの構造及び方法に関する。
【０００２】
【従来の技術】集積回路（ＩＣ）技術において、４０年
以上の間、純粋又はドープされたアルミニウムがボンド
・パッド及び相互接続のための金属として選ばれてい
る。アルミニウムの主な長所は、堆積及びパターン化の
容易さを有することである。さらに、金、銅、又はアル
ミニウムから作られたワイヤをアルミニウムのボンド・
パッドにボンデイングする技術は、自動化、微小化、信
頼性の点で高いレベルに達している。ワイヤをアルミニ
ウムにボンデイングする高い技術的水準は１９９５年１
０月３日に発行された米国特許第５，４５５，１９５号
（ラムゼイ等、「集積回路導電性ボンドに金属安定性を
得る方法」）、１９９３年９月１４日に発行された米国
特許第５，２４４，１４０号（ラムゼイ等、「１２５Ｋ
Ｈｚを超えた超音波ボンデイング方法」）、１９９３年
４月１３日に発行された米国特許第５，２０１，４５４
号（アルフアロ等、「ＩＣ相互接続内の増強された金属
間成長方法」）、及び１９９１年６月１１日に発行され
た米国特許第５，０２３，６９７号（ツムラ、「銅ワイ
ヤ・ボールボンデイングを有する半導体装置」）にみる
ことができる。
【０００３】ＩＣの微小化への継続する傾向において、
能動回路要素間の相互接続のＲＣ時定数が、達成される
ＩＣ速度−電力積を増加的に支配する。この結果、相対
的に高抵抗のアルミニウムの相互接続は、銅などのより
低い抵抗性の金属に対して劣ることが今や明らかであ
る。さらに、アルミニウムのエレクトロマイグレーショ
ン（電気移動）についてきわだった感受性が重大な障害
となっている。この結果、半導体業界において、銅をそ
のより高い電気伝導性とより低いエレクトロマイグレー
ション感受性に基づいて好適な相互接続金属として使用
する強い動機が存在する。しかし、アルミニウム相互接
続技術の成熟性の観点からは、銅への変化は重大な技術
的挑戦である。
【０００４】
【発明が解決しようとする課題】シリコン格子内に置か
れた銅原子のキャリア寿命消滅特性から回路を保護する
ために、銅がＩＣのシリコンに基づいた材料中に拡散す
ることをシールドしなければならない。銅で作られたボ
ンド・パッドについては、製造工程フロー中で薄い酸化
銅（Ｉ）膜が形成されることを防止しなければならな
い。何故ならば、この膜はボンデイング・ワイヤの接
続、特に、通常の金ワイヤ・ボールボンデイング、につ
いて、信頼性のある接着を重大に妨げるからである。金
属アルミニウム上を覆う酸化アルミニウム膜とは対照的
に、金属銅上を覆う酸化銅膜は、ボンデイング工程中に
加えられる超音波エネルギーと熱圧着の組合せにより容
易に破壊できない。さらに困難なことに、裸の銅ボンド
・バッドは腐食を受け易い。
【０００５】これらの問題を解決するために、アルミニ
ウム層のキャップできれいな銅パッドを覆い、そして通
常の金ワイヤ・ボールボンデイングによる従来状態のア
ルミニウム・パッドへのボンデイングが再構成されると
いう方法が開示されている。適当なボンデイング工程が
１９９８年７月２８日に発行された米国特許第５，７８
５，２３６号（チャング等、「既存のＩＣワイヤ・ボン
デイング技術と互換性のある銅相互接続システム」）に
記載されている。しかし、この記載された手法はいくつ
かの欠点を有する。
【０００６】第１に、アルミニウムのキャップの製造コ
ストは高い。何故ならば、この方法は、金属の堆積、パ
ターン化、エッチング、及び清浄化の追加の工程を要す
るからである。第２に、キャップは、銅がキャップ金属
を通って拡散し、そしてＩＣトランジスタを損傷するの
を防ぐために十分に厚くなければならない。第３にキャ
ップに使用されるアルミニウムは柔らかく、従って、電
気的試験の際のマルチプローブ接触のマーキングによっ
て重大な損傷を受ける。そしてこの損傷は、ボンド・パ
ッドの大きさが減少し続けているので、その後のボール
・ボンド接着がもはや信頼性を持たなくなるほど、重大
となる。
【０００７】銅電極ＩＣの銅ボンド・パッドのキャップ
を設ける低コストの構造と方法が、２０００年２月１８
日に出願された米国特許出願番号６０／１８３，４０５
に開示されている。本発明はこの出願に関係する。最小
の製造コストでもってその後のワイヤ・ボンデイングを
妨げる潜在的可能性のある金属の上方拡散を最大に制御
できるキャプ付きボンド・パッドへのワイヤの信頼性の
有るボンデイング方法が早急に必要となっている。この
方法は、異なるＩＣ製品フアミリイ及び設計及び工程の
変化の広い範囲に応用できるように十分にフレキシブル
でなければならない。好ましくは、これらの革新は、製
造サイクル・タイムを減少し、スループットを増大し、
そして項かな追加の製造装置を必要とせずに、達成され
なければならない。
【０００８】
【課題を解決するための手段】本発明は、頑健で信頼性
の有る低コストの金属構造及び集積回路（ＩＣ）の銅電
極の相互接続への電気的ワイヤ接続を可能にする方法を
開示する。構造は、酸化されていない銅表面上に堆積さ
れた銅の拡散を妨げる障壁金属層を有する。障壁層の厚
さは、障壁層が存在しない場合と比較して障壁層が２５
０℃において８０パーセント以上の銅の拡散を減少する
ようなものである。構造はさらに、接着可能金属が存在
しない場合と比較して２５０℃において８０パーセント
以上の銅の拡散を減少する最外層を含む。最後に、金属
ワイヤは金属接続のために最外層に接着される。
【０００９】障壁層金属は、ニッケル、コバルト、クロ
ム、モリブデン、チタン、タングステン、及びこれらの
合金から成るグループから選択される。最外金属層は、
金、白金、及び銀から成るグループから選択される。
【００１０】本発明は、銅相互接続電極を有する高密度
及び高速度ＩＣに関する。特に、多数の電極入力／出
力、又は「ボンド・パッド」を有するこれらのＩＣに関
する。これらの回路は、プロセッサ、デジタル及びアナ
ログ装置、論理装置、高周波数及び高出力装置、及び大
面積と小面積チップの両範疇に入るような多くの装置フ
アミリイにおいて見られる。
【００１１】本発明の１つの観点は、ボンド・パッド面
積を減少することに応用でき、そしてＩＣチップの縮小
を支援する。従って、本発明は、セルラー通信、ペイジ
ャー（呼出し機）、ハードディスク・ドライブ、ラップ
トップ・コンピュータ及び医療器具のような連続的に縮
小する応用において空間的制約を緩和することを助け
る。
【００１２】本発明の別の観点は、ボンド・パッド金属
キャップを無電解堆積の自己画定方法により製造し、よ
ってコストの高いフォトリソグラフイ及び整列技術を回
避することができる。
【００１３】本発明の別の観点は、上昇された接着温度
における上方拡散及びその後の接着禁止化学反応を最小
にするために調整された層厚及び金属の適当な対を選択
するために金属拡散係数によりガイドされることであ
る。
【００１４】本発明の別の観点は、プローブ・マーク及
びその後の接着困難性を除去することにより、ウエハ・
レベル複数プローブの信頼性及び工程を進歩させること
である。
【００１５】本発明の別の目的は、多くの半導体製品の
フアミリイに応用できるようにフレキシブルで、そして
数世代の製品に適用できるように一般的な設計及び方法
のコンセプトを提供することである。
【００１６】本発明の別の目的は、ＩＣ装置の製造にお
いて最も共通に使用され且つ受け入れられる設計と方法
のみを使用し、よって新しい資本投資コストを回避して
設置された製造装置のベースを使用することである。
【００１７】これらの目的は、大量生産に適した製造流
れ及び選択基準に関する本発明の教示により達成され
る。ボンド・パッドの銅の無酸化表面は、パラジウムな
どの金属によりシードされ、そしてニッケルなどの障壁
金属層により覆われる。この障壁層の厚さは、接着操作
の上昇された温度において過剰な銅の上方拡散を防止す
るようなものでなければならない。最外層は、パラジウ
ム又は金などの接着可能な金属である。この層厚は、酸
化して接着を妨げるニッケルの表面への上方拡散を防止
するようなものでなければならない。大量生産におい
て、さまざまな金属層が無電解メッキで堆積され、そし
て高価なフォトリソグラフイック画定ステップの必要性
を回避する。
【００１８】本発明により示される技術的な進歩及びそ
の観点は、添付図面を参照して以下の本発明の好適な実
施の形態の記述から明らかとなるであろう。
【００１９】
【発明の実施の形態】図１Ａは、本発明の好適な実施の
形態の概略的な断面図であり、一般的に１００でもって
示す。集積回路（ＩＣ）は、銅相互接続電極（メタライ
ゼーション）を有し、そして湿気浸透保護被膜１０１に
より覆われている。この被膜は通常、普通に０．５乃至
１．０μｍ厚さの窒化シリコンにより作成される。窓１
０２は、銅電極１０３の部分を露出するために被膜内に
開口されている。図１Ａには、ＩＣの部分に拡散するの
を防止する銅を埋め込んだ下層は示されていない（普
通、窒化タンタル、窒化シリコン・タンタル、窒化タン
グステン、窒化シリコン・タングステン、チタン、窒化
チタン、又は、チタニウム・タングステンから作られ
る。図３参照）。
【００２０】図１Ａにおいて、誘電体ＩＣ部分は概略的
にのみ示されている。これらの電気的絶縁部分は、二酸
化シリコンなどの伝統的なプラズマ増強化学蒸着誘電体
のみならず、シリコン含有水素シルセスキオサン、有機
ポリイミド、エアロゲル、及びパリレン、マタハプラズ
マ発生又はオゾン酸化テトラエチルオルソシリケートを
含んだ誘電体層の堆積などのより低い誘電率を有するよ
り新しい誘電体材料も含む。これらの材料は以前の標準
の絶縁体よりも低密度で機械的により弱いため、銅の下
の誘電体はしばしば補強される。例としては、０５／１
８／９８出願の米国特許出願番号６０／０８５，８７６
（サラン等、「半導体内のボンド・パッドを補強するた
めの細かいピッチ・システム及び方法」）及び０７／１
４／９８出願の米国特許出願番号６０／０９２，９６１
（サラン、「能動集積回路上の接着のためのシステム及
び方法」）がある。
【００２１】銅は腐食を受け易く、そして薄い酸化銅
（Ｉ）の膜でさえ接着するのは困難であるため、本発明
は図１、図２、及び図３に示されるように露出された銅
上に形成されたキャップの構造と方法を提供する。本発
明によれば、キャップは、三つの要求を満足するように
調整された厚さを有する金属の堆積から成る。＊ キャ
ップは、銅がその後のワイヤ接着操作を妨げるキャップ
表面への銅の上方拡散に対する障壁として作用する。詳
細には、キャップ金属の選択とその厚さは、キャップが
障壁金属の存在しない場合と比較して２５０℃において
８０パーセント以上の銅の上方拡散を減少するように調
整される。＊ キャップは、高価なフォトリソグラフイ
ック工程を回避した技術により製造される。詳細には、
無電解工程がキャップ金属層を堆積するのに使用され
る。＊ キャップは、接着可能な最外金属表面を有す
る。詳細には、通常のボール及びウエッジ・ボンデイン
グ技術が金属ワイヤと他の結合部材を金属的にボンド・
パッドに結合するのに使用できる。
【００２２】図１Ｂ及び図２に示されるように、ワイヤ
・ボール・ボンデイングが電気的接続を作るために結合
部材を使用する好適な方法である。別の方法は、ウエッ
ジ・ボンダーを使用するリボン・ボンデイングである。
ウエッジ・ボンデイングと比較して、ボール・ボンデイ
ングは上昇された温度で操作されるので本発明の材料と
方法とが調和される必要がある。
【００２３】ワイヤ・ボンデイング方法は、ボンド・パ
ッドを持ったＩＣチップとチップが接着される物体の両
方を、それらの温度が約１７０乃至３００℃の間に上昇
させるために加熱されたペデスタルに置くことにより、
開始する。典型的に、金、金ベリリウム合金、他の金合
金、銅、アルミニウム、又はそれらの合金からなり、典
型的に１８乃至３３μｍの範囲の直径を有するワイヤ１
１０（図１Ｂ）は、普通、２００乃至５００℃の温度範
囲に加熱されたキャピラリーにより張られる。ワイヤの
先端で、炎又はスパーク技術のいずれかを使用して、自
由空気ボールが作られる。ボールは典型的に約１．２乃
至１．６ワイヤ直径の直径を有する。キャピラリーは、
チップ・ボンデイング・パッド（図１Ａ内の１０２）の
方向へ移動され、ボールがボンデイング・パッド・キャ
ップ（図１Ａ及び１Ｂ中の層１０６）の電極に対して押
し付けられる。圧縮力と超音波エネルギーとの組合せ
が、金属の相互拡散により強い電極接着を形成する。接
着時、温度は普通、１５０乃至２７０℃の範囲である。
図１Ｂにおいて、概略的な形１１１が、ワイヤ・ボール
・ボンデイング中の接着された「ボール」の最終的な形
を例示する。
【００２４】本発明において、ワイヤ・ボンデイングの
最近の技術進歩が、小さいが信頼性の有るボール接点と
厳しく制御されたワイヤ・ループの形状の形成を可能に
する。７５乃至４０μｍの小さいボール・ピッチを達成
できる。このような進歩は、例えば、米国テキサス州ダ
ラス、テキサス・インスツルメントによるＡＢＡＣＵＳ
Ａ又は米国ペンシルバニア州ウイロウ・グローブ、クリ
ッケ＆ソフアによるコンピュータ化接着機８０２０に見
ることができる。キャピラリーを空気中を所定のコンピ
ュータ制御方法で移動することにより、正確に定義され
た形状のワイヤ・ループを形成できる。最後に、キャピ
ラリーはその所望の目的地に到達して低下し、物体の接
点パッドに触れる。キャピラリーを押し付けることによ
り、金属的に縫われた接着が形成され、そしてキャピラ
リーを解除するためにワイヤが炎により切断される。縫
われた接点は小さいが信頼性が有り、縫い目の押し付け
の横方向大きさは、ワイヤ直径の約１．５乃至３倍であ
る（その正確な形状は、キャピラリー壁厚さ及びキャピ
ラリーのフット・プリントなどの使用されるキャピラリ
ーの形状に依存する）。
【００２５】本発明の１つの利点は、電気的複数プロー
ビングに使用される微細な針の先端がプローブのマーク
を形成しない十分に硬いボンド・パッドの金属キャップ
表面を提供することである。針の押し付けにより引き裂
かれる柔らかい金属表面は、現在のボンド・パッドの縮
小する傾向においてボンド・パッドの面積が小さい時、
押し付けが接着可能領域の大部分を乱すため、特に接着
が困難となる。
【００２６】本発明によれば、銅１０３上の金属キャッ
プには２つの層が与えられる。層１０５は、ときどきシ
ード金属層（図２及び図３を参照）に堆積されて、銅２
０３上に置かれる。層１０５の例としては、ニッケル、
コバルト、クロム、モリブデン、チタン、タングステ
ン、及びこれらの合金である。これらの金属は高価でな
く、無電解メッキにより堆積できる。しかし、これらは
接着性が弱い。これらの金属中で、銅は２５０℃におい
て１Ｘ１０Ｅ−２３ｃｍ2／ｓよりも少ない拡散係数を
有する。従って、これらの金属は良い銅拡散障壁であ
る。拡散計算により、層が無い時と比較して銅の拡散を
８０パーセント以上減少するのに必要な層厚が得られ
る。例えば、明細書の後に示される表は、拡散時間
（分）をパラメータとして、２５０℃又は１６０℃にお
いて銅が拡散する時のニッケルの層厚をリスとしてい
る。一般に、約０．５乃至１．５μｍの障壁厚みは安全
に銅減少基準を満足する。
【００２７】層１０６は、キャップの最外層として層１
０５上に置かれる。これはワイヤ・ボンド１１１を受け
入れることができるように接着可能である。層１０６の
例としては、金、白金、パラジウム、及び銀である。こ
れに加えて、これらの金属は障壁１０５に使用される金
属（ニッケルなど）について２５０℃にて１Ｘ１０−１
４ｃｍ2／ｓ以下の拡散係数を有する。従って、これら
の金属は層１０５の材料に対して良い拡散障壁である。
再び、拡散計算により、層１０６が無い時と較べて層１
０５に使用されている金属の上方拡散を８０パーセント
以上減少するのに必要な層厚が得られる。例として、明
細書の後に示される表には拡散時間（分）をパラメータ
として２５０℃又は１６０℃におけるニッケルの上方拡
散する時の金の層厚（μｍ）を示している。一般に、
１．５μｍ又はいくぶんこれよりすくない最外層は、層
１０５からの金属拡散についての減少基準を安全に満足
する。
【００２８】別の実施例として、明細書の後に示される
表は、拡散時間（分）をパラメータとして、２５０℃又
は１６０℃においてニッケルが上方拡散する時のパラジ
ウムの層厚（μｍ）をリストする。一般に、約０．４乃
至１．５μｍの最外層１０６の厚さが安全に層１０５か
らの金属拡散に対する減少基準を満足するであろう。
【００２９】図４には、無電解メッキの方法のフローが
記載されている。通常、メッキされた層はボンド・パッ
ド開口（図１Ａ中の１０２）の大きさに適合する。しか
し、減少された厚さの保護皮膜を有するボンド・パッド
に対して、１つ又は複数のメッキされた層が開口の周縁
を越えて無電解的に成長する。図２は、この層成長の例
を概略的に示す。保護被膜層２０１は減少された厚さ２
０１ａを有する（例えば、通常の１．０μｍの代りに
０．５μｍ）。銅電極２０３の無酸化表面２０３ａ上に
直接メッキされた金属シード層２０８は、被膜の開口内
に容易に適合するけれど、障壁層２０５及び接着可能層
２０６は開口周縁を越えて成長する。このキャップ領域
は図２において２０５ａ及び２０６ａと示される。これ
はワイヤ「ボール」２１１の電極接着に影響を与えない
が、隣接するボンド・パッドへの最小距離に影響を与え
る。
【００３０】図３は、本発明の好適な実施の形態をより
詳細に示す。大部分の大きさの範囲は図１ａ及び図１ｂ
の説明を引用し、無電解メッキ及び他の製造工程のステ
ップは図４において説明される。保護被膜３０１は、ボ
ンド・パッドＩＣ銅電極３０３をキャップする、堆積さ
れた層の全てを収容するのに十分な厚さとボンド・パッ
ドの大きさを定義する、開口を有する。銅のトレース３
０３は、誘電体３０４及び金属再補強３０４ａに囲まれ
ている（方法が上記に引用されている）、耐熱金属シー
ルド３０２（例えば、窒化タンタル）内に埋め込まれて
いる。
【００３１】清浄化され且つ無酸化銅表面３０３ａに直
接に対向するのはキャップの第１層で、シード金属（例
えば、約５乃至１０ｎｍ厚のパラジウム、別の選択はス
ズ）の薄い層３０８である。シード金属層に直接続くの
は銅の上方拡散に対する障壁としての金属層３０５（例
えば、ニッケル）である。この障壁層の上には、障壁金
属（ニッケルなど）の上方拡散に対する障壁としての、
同時に、電極接着可能なキャップの最外層としての金属
層３０６（例えば、金、又は、パラジウム）である。
【００３２】図３のボンド・パッド・キャップを製造す
るのに使用される無電解工程が、図４に示されている。
保護被膜中にボンド・パッドが開口し、ボンド・パッド
領域内の銅ＩＣ電極を露出した後、キャップ堆積工程が
４０１で開始される。工程のステップは以下の通りであ
る。
【００３３】・ステップ４０２：スピン・オン技術を使
用してシリコンＩＣウエハの裏側にレジストを被膜す
る。この膜はウエハ裏側に偶然な金属堆積を防止する。 ・ステップ４０３：約３０乃至６０分の時間、典型的に
は１１０℃でレジストを焼成する。 ・ステップ４０４：約２分間、プラズマ灰化工程を使用
して露出したボンド・パッド銅表面を清浄化する。 ・ステップ４０５：約５０乃至６０秒間、硫酸、硝酸、
又は他の酸の溶液に、ボンド・パッドの露出された銅を
有するウエハを浸すことにより、清浄化する。 ・ステップ４０６：約１００乃至１８０秒間、オーバー
フローすすぎ機ですすぐ。 ・ステップ４０７：約４０乃至８０秒間、塩化パラジウ
ムなどの触媒塩化金属溶液中にウエハを浸して、銅表面
を「活性化」する。すなわち、シード金属（パラジウム
など）を清浄な無酸化銅表面に堆積する。 ・ステップ４０８：約１００乃至１８０秒間、ダンプす
すぎ機ですすぐ。 ・ステップ４０９：銅上方拡散に対して障壁金属を無電
解メッキする。もしニッケルが選択されると、１５０乃
至１８０秒間のメッキは約０．４乃至０．６μｍ厚のニ
ッケルを堆積する。 ・ステップ４１０：約１００乃至１８０秒間、ダンプす
すぎ機によりすすぐ。 ・ステップ４１１：接着可能であり且つ同時に下の障壁
金属の上方拡散に対する障壁を提供する最外層を無電解
メッキする。もし金又はパラジウムが選択されたなら
ば、１５０乃至１８０秒間のメッキがそれぞれ約０．４
乃至０．６μｍ厚の金又はパラジウムを堆積する。好適
な工程は、最初に自己制限表面金属置換を持った浸入ス
テップを使用する。もし金が選択されると、４００乃至
４５０秒間のメッキは約３０ｎｍ厚の金を堆積する。よ
り厚い金属層（０．５乃至１．５μｍ厚）の第２ステッ
プとして、浸入ステップの後に自触媒的工程ステップが
続く。 ・ステップ４１２：約１００乃至１８０秒間、ダンプす
すぎ機内ですすぐ。 ・ステップ４１３：約８乃至１２分間、ウエハの裏側の
保護レジストを剥ぎ取る。 ・ステップ４１４：約６乃至８分間、スピンすすぎと乾
燥を行なう。ボンド・パッド・キャップ製造工程はステ
ップ４１５で終了する。
【００３４】その後のボール又はウエッジ・ボンデイン
グ工程による金属ワイヤ又はリボンの電極接続は上述さ
れた。
【００３５】以上、本発明が例示的な実施の形態につい
て説明されたが、この説明は限定的な意味に解釈される
ことを意図していない。当業者にとって、説明を参考に
して例示の実施の形態及び本発明の別の実施の形態につ
いてさまざまな修正や組合せが明らかである。例えば、
本発明は、耐火金属と貴金属の合金などの、通常のボー
ル又はウエッジ・ボンデイング技術により接着が困難な
又は不可能な、銅以外のＩＣボンド・パッド電極にも適
用できる。別の例としては、本発明は製造コストをさら
に低下するバッチ処理にも拡張できる。別の例として、
本発明はワイヤ／リボン接着及びはんだ相互接続の混合
技術にも使用できる。特許請求の範囲はこのような修正
又は実施の形態のいずれも含むことを意図されている。
【００３６】
【表】この表は、障壁金属が存在しない場合と比較して
８０パーセント以上の下層の金属の上方拡散を減少する
に必要な障壁金属層の計算された厚さのリストである。
【００３７】以上の記載に関連して、以下の各項を開示
する。 １．金属ワイヤと銅相互接続電極を有する集積回路上に
置かれたボンド・パッドの間の金属的接続のための構造
において、無酸化銅のボンド・パッド表面と、前記銅表
面上に堆積された銅の拡散に抵抗する障壁金属の層であ
って、この障壁金属及びその厚さは前記障壁層が存在し
ない場合と比較して２５０℃において８０パーセント以
上の銅の拡散を減少するように調整されている前記障壁
金属の層と、接着可能な金属の最外層であって、最外層
の厚さは前記接着可能な金属が存在しない場合と比較し
て２５０℃において８０パーセント以上の前記障壁金属
の拡散を減少するように調整されている前記接着可能な
金属の最外層と、前記接着可能な金属の最外層に接着さ
れた前記金属ワイヤの１つと、を含む構造。 ２．前記障壁金属の層が、ニッケル、コバルト、クロ
ム、モリブデン、チタン、タングステン、及びこれらの
合金から成るグループから選択されてている１項に記載
の構造。 ３．前記接着可能な金属の層が、金、白金、パラジウ
ム、及び銀から成るグループから選択されている１項に
記載の構造。 ４．前記無酸化銅と前記障壁金属層の間の薄いシード金
属層をさらに含む１項に記載の構造。 ５．前記シード金属がパラジウム又はスズである４項に
記載の構造。 ６．前記金属ワイヤが、金、銅、アルミニウム、及びこ
れらの合金から成るグループから選択されている１項に
記載の構造。
【００３８】７．金属ワイヤと銅相互接続電極を有する
集積回路上に置かれたボンド・パッドとの間の金属的接
続を形成する方法において、前記ボンド・パッドの前記
銅電極の表面を活性化し、シード金属を堆積し、無電解
メッキにより、銅拡散に抵抗する障壁金属の層をメッキ
し、前記障壁金属とその厚さは前記障壁金属が存在しな
い場合と比較して２５０℃において８０パーセント以上
の銅の拡散を減少するように調整されており、無電解メ
ッキにより、接着可能な金属の層をメッキし、前記接着
可能な金属及びその厚さは前記接着可能な金属が存在し
ない場合と比較して２５０℃において８０パーセント以
上の前記障壁金属の拡散を減少するように調整されてい
て、これにより前記ボンド・パッドの接着可能な金属の
最外層を形成し、前記最外層金属上に前記金属ワイヤの
１つを接着する、各ステップを含む方法。 ８．前記ワイヤを接着するステップが、ボール・ボンデ
イング又はウエッジ・ボンデイングを含む７項に記載の
方法。 ９．前記ボンド・パッドが、銅電極を有する表面部分を
含む前記集積回路の表面上に保護被膜を堆積し、ホトリ
ソグラフイックにより前記被膜の選択された領域を開口
し、前記銅電極の表面を露出する各ステップを含む工程
により形成される７項に記載の方法。 １０．前記開口ステップ後に、前記露出された銅表面を
硫酸、硝酸、又は他のどんな酸の溶液に浸入させること
により清浄化するステップをさらに含む９項に記載の方
法。 １１．前記活性化ステップが、ボンド・パッドを触媒塩
化金属溶液中に浸入することを含む７項に記載の方法。 １２．前記塩化金属が塩化パラジウムであり、パラジウ
ムのシードを堆積する１１項に記載の方法。 １３．前記接着可能な金属の前記無電解メッキは浸入メ
ッキである７項に記載の方法。 １４．前記接着可能金属層の前記無電解メッキの浸入メ
ッキの後に、自触媒作用メッキが行なわれる７項に記載
の方法。 １５．前記接着ステップ前に、前記ボンド・パッドの前
記最外層金属に電気的プローブを、プローブ・マークを
実質的に残さずに行なうステップをさらに含む７項に記
載の方法。
【００３９】１６．集積回路の銅相互接続金属に電気的
にワイヤ／リボン接着を可能にする頑健で、信頼性の高
い、そして低コストの金属構造及び方法。この構造は、
無酸化銅表面上に堆積された銅拡散に抵抗する障壁金属
の層で、その厚さが障壁金属が存在しない場合に比較し
て２５０℃において８０パーセント以上の銅の拡散を減
少する障壁層を有する。この構造はさらに最外の接着可
能金属層を有し、この接着可能金属層が存在しない場合
に比較して２５０℃において８０パーセント以上の障壁
金属の拡散を減少する。最後に、金属ワイヤが最外層に
接着されて、金属的接着を行なう。障壁金属は、ニッケ
ル、コバルト、クロム、モリブデン、チタン、タングス
テン、及びこれらの合金から成るグループから選択され
る。最外層の接着可能金属は、金、白金、及び銀から成
るグループから選択される。
【図面の簡単な説明】
【図１Ａ】 本発明の好適な実施の形態の概略的な断面
図であり、銅電極を有する集積回路のボンド・パッド上
の積み重ねられた層の接着可能なキャップを示す。
【図１Ｂ】 本発明の好適な実施の形態の概略的な断面
図であり、ボール接着ワイヤを含む図１Ａのボンド・パ
ッドを示す。
【図２】 本発明の好適な実施の形態の概略的な断面
図。
【図３】 本発明の好適な実施の形態の概略的な断面
図。
【図４】 本発明によるボンド・パッド・キャップの製
造のための工程フローのブロック図。
【符号の説明】
１０１ 保護被膜 １０２ 窓 １０３ 銅電極 １０４ 誘電体 １０５ 障壁層 １０６ 最外層 １１０ 金属ワイヤ １１１ ボール
───────────────────────────────────────────────────── フロントページの続き (72)発明者 ウィリアム イー スビド アメリカ合衆国 テキサス州 75040 ガ ーランド ウッドキャッスル ドライヴ 522

Claims (2)

    【特許請求の範囲】
  1. 【請求項１】 金属ワイヤと銅相互接続電極を有する集
    積回路上に置かれたボンド・パッドの間の金属的接続の
    ための構造において、 無酸化銅のボンド・パッド表面と、 前記銅表面上に堆積された銅の拡散に抵抗する障壁金属
    の層であって、この障壁金属及びその厚さは前記障壁層
    が存在しない場合と比較して２５０℃において８０パー
    セント以上の銅の拡散を減少するように調整されている
    前記障壁金属の層と、 接着可能な金属の最外層であって、最外層の厚さは前記
    接着可能な金属が存在しない場合と比較して２５０℃に
    おいて８０パーセント以上の前記障壁金属の拡散を減少
    するように調整されている前記接着可能な金属の最外層
    と、 前記接着可能な金属の最外層に接着された前記金属ワイ
    ヤの１つと、 を含む構造。
  2. 【請求項２】 金属ワイヤと銅相互接続電極を有する集
    積回路上に置かれたボンド・パッドとの間の金属的接続
    を形成する方法において、 前記ボンド・パッドの前記銅電極の表面を活性化し、シ
    ード金属を堆積し、 無電解メッキにより、銅拡散に抵抗する障壁金属の層を
    メッキし、前記障壁金属とその厚さは前記障壁金属が存
    在しない場合と比較して２５０℃において８０パーセン
    ト以上の銅の拡散を減少するように調整されており、 無電解メッキにより、接着可能な金属の層をメッキし、
    前記接着可能な金属及びその厚さは前記接着可能な金属
    が存在しない場合と比較して２５０℃において８０パー
    セント以上の前記障壁金属の拡散を減少するように調整
    されていて、これにより前記ボンド・パッドの接着可能
    な金属の最外層を形成し、 前記最外層金属上に前記金属ワイヤの１つを接着する、 各ステップを含む方法。
JP2001085103A 2000-03-24 2001-03-23 銅電極集積回路のためのワイヤ・ボンデイング構造及びその方法 Abandoned JP2001319946A (ja)

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US20050106851A1 (en) 2005-05-19
EP1139413B1 (en) 2005-03-16
KR100741592B1 (ko) 2007-07-20
CN1245272C (zh) 2006-03-15
EP1139413A3 (en) 2002-06-12
US20010035452A1 (en) 2001-11-01
CN1317389A (zh) 2001-10-17
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