561583 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 發明領域： 本發明係有關於積體電路之鋁銅彼覆連線結構及其製 造方法，特別是有關於將鋁金屬彼覆於銅金屬内連線上， 以形成積體電路連線之結構及其製造方法。 發明背景： 隨著積體電路製程的迅速發展，後段多層導體連線製 程越來越受到重視。進入深次微米元件領域，積體電路元 件中元件運算速度的提升一直是各家必爭的要點，同時也 是購買者選擇時的重要訴求。其中，由於金屬連接線所造 成的時間常數（RC Time Constant)延遲現象嚴重影響元件 操作的速度，其改善方法之一係為選用低電阻的金屬材料 來做為金屬連線結構，例如銅、金、銀等金屬材料已被列 入考量中。 其中，由於金金屬具有較低的電阻率、良好的抗腐餘 能力與抗電遷移性，金金屬連線層在早期的積體電路工業 被使用，但金金屬易於低溫下與矽金屬形成一複合中心， 加上不易進行乾蝕刻，因此較不易發展。另外，銀金屬雖 可提供甚低的電阻率，約1 · 5 9 // Ω - c m，但在一般的環境下 極容易被腐蝕，所以也被排除在積體電路工業的應用之 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) ----------------------、可--------- (請先閲讀背面之注意事項再填寫本頁) 561583 A7 - B7 五'發明説明（） (請先閲讀背面之注意事項再填寫本頁) 外。而鋼金屬本身具有許多優勢，例如：（1)低電阻：銅金 屬的電阻值約為L67# Ω -cm，較金金屬為低。⑺抗電性 遷移能力佳：銅金屬約為鋁金屬的3〇倍至1〇〇倍。㈠）良 好的熱導性。再加上可以化學氣相沈積與電鍍的方式長 成’因此，銅製程已漸成為各積體電路廠所採用的製程。 金屬連接線尺寸的縮小會增加連接線電阻及電流密 度，其中電流密度對電性遷移的可靠度有很大的影響。早 期積體電路的製造並不採用銅金屬做為金屬連接線主因是 由於鋼金屬的擴散係數很高，與矽或二氧化矽接觸後會很 快擴散到基材，產生深層能階的問題。另外，銅金屬本身 易氧化，低溫下易與其他材料反應，加上對銅金屬製程缺 乏有效的乾式蝕刻技術，因此限制了銅金屬製程的發展。 但是由於材料與積體電路製程技術的進步，各種擴散阻障 層不斷的被研究，加上金屬鑲嵌製程與銅金屬化學機械研 磨製程技術的開發，使得上述銅金屬製程的問題得以解 決。 經濟部智慧財產局員工消費合作社印製 第1圖所繪示為一般已製作完成的積體電路元件之結 構剖面圖。請參照第1圖，在基材1 〇中，斜線部分係表示 金屬連線的部份，一般係利用金屬鑲嵌結構來進行金屬内 連線的製造，係由數層銅金屬連線層來構成金屬内連線結 構。其中，由表面至基材底部分別為第N層銅金屬連線12、 本紙張尺度適用中國國家標準(CNS)A4規格(21〇χ297公釐) 561583 A7 B7 五、發明説明（） 第（N-1)層銅金屬連線14、第（^2)層銅金屬連線16、第（N-3) 層銅金屬連線18、與第（N-4)層鋼金屬連線2〇。 由於一般積體電路元件中的熔絲結構22係位於第（N_ 2)層銅金屬連線16處，若要增加第N層銅金屬連線丨2之 厚度時，同時會使得熔絲結構2 2上方的介電層厚度增厚。 因此，當使用雷射來燒斷熔絲結構時，介電層的蝕刻會產 生控制上的難題。另外，第N層鋼金屬連線12之沈積步驟 中，沈積過厚的銅金屬層較容易導致缺陷（Defect)與表面小 凸起（Hillock)的產生，使得應力不平均因而影響到積體電 路元件的穩定性。 發明目的及概述： 鑒於上述之發明背景中，最頂層的銅金屬内連線的厚 度增厚時’會影響熔絲結構的燒斷步驟（Fuse 〇pen)，因此， 本發明的目的之一，係為提供一種鋁銅彼覆連線結構及其 製造方法，可解決上述熔絲結構之介電層蝕刻困難的問 題。 本發明的另一目的，係提供一種使得積體電路元件製 造中，較易控制最頂層金屬連線之厚度與品質，並增加銅 製程中金屬鑲嵌製程之製程窗的製造方法。 4 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) (請先閱讀背面之注意事項再填寫本頁) 、言 經濟部智慧財產局員工消费合作社印製 561583 A7561583 Printed by A7 B7, Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention () Field of the invention: The present invention relates to the aluminum-copper overlying connection structure of integrated circuits and its manufacturing method, especially to the aluminum metal They are coated on copper metal interconnects to form a structure for integrated circuit connections and a method for manufacturing the same. BACKGROUND OF THE INVENTION: With the rapid development of integrated circuit manufacturing processes, the process of connecting multi-layer conductors at the rear has received increasing attention. Entering the field of deep sub-micron components, the improvement of component computing speed in integrated circuit components has always been a must-have point for various companies, and it is also an important demand when buyers choose. Among them, the RC Time Constant delay phenomenon caused by metal connecting lines seriously affects the speed of component operation. One of the improvement methods is to use low-resistance metal materials as the metal connection structure, such as copper and gold. , Silver and other metal materials have been included in the consideration. Among them, gold metal has a low resistivity, good anti-corrosion ability and resistance to electromigration. Gold metal wiring layers were used in the early integrated circuit industry, but gold metal is easy to form with silicon metal at low temperature. The recombination center, coupled with the difficulty of dry etching, is less likely to develop. In addition, although silver metal can provide very low resistivity, about 1 · 5 9 // Ω-cm, it is very easy to be corroded under normal environment, so it is also excluded from the paper standard of the integrated circuit industry. Applicable to China National Standard (CNS) A4 specification (210X297 mm) ---------------------- 、 may --------- (please first Read the notes on the back and fill out this page) 561583 A7-B7 Five 'invention description () (Please read the notes on the back before filling out this page). The steel metal itself has many advantages, such as: (1) Low resistance: The resistance value of copper metal is about L67 # Ω -cm, which is lower than that of gold metal.电 Good electrical resistance Migration ability: Copper metal is about 30 to 100 times that of aluminum metal. ㈠) Good thermal conductivity. In addition, it can be grown by means of chemical vapor deposition and electroplating. Therefore, the copper process has gradually become the process adopted by various integrated circuit factories. The reduction of the size of the metal connection line will increase the resistance and current density of the connection line, and the current density has a great influence on the reliability of the electrical migration. In the manufacture of early integrated circuits, copper metal was not used as the metal connection line. The main reason is that the diffusion coefficient of steel metal is very high, and it will diffuse to the substrate quickly after contacting with silicon or silicon dioxide, resulting in deep energy level problems. In addition, copper metal itself is easy to oxidize, and it is easy to react with other materials at low temperatures. In addition, the lack of effective dry etching technology for the copper metal process limits the development of the copper metal process. However, due to the advancement of materials and integrated circuit process technology, various diffusion barrier layers have been continuously researched, coupled with the development of metal damascene process and copper metal chemical mechanical grinding process technology, so that the above problems of copper metal process can be resolved. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figure 1 shows a cross-sectional view of the structure of integrated circuit components that have been produced. Please refer to Figure 1. In the substrate 10, the oblique line indicates the part of the metal connection. Generally, the metal inlay structure is used to manufacture the metal interconnection. It is composed of several copper metal connection layers. Metal interconnect structure. Among them, from the surface to the bottom of the substrate are the N-th layer of copper-metal connection12. This paper size applies the Chinese National Standard (CNS) A4 specification (21 × 297 mm) 561583 A7 B7 V. Description of the invention () Section (N -1) layer copper metal connection 14, layer (^ 2) copper metal connection 16, layer (N-3) copper metal connection 18, and (N-4) layer steel metal connection 20. Because the fuse structure 22 in the general integrated circuit element is located at the (N_ 2) th layer of copper metal connection 16, if the thickness of the Nth layer of copper metal connection 丨 2 is to be increased, the fuse structure 2 will be made at the same time. The thickness of the dielectric layer above 2 is increased. Therefore, when a laser is used to blow out the fuse structure, the etching of the dielectric layer may cause a control problem. In addition, during the deposition step of the N-th layer of steel-metal connection 12, the deposition of an excessively thick copper metal layer is more likely to cause defects and small bumps on the surface, making the stress uneven and affecting the integrated circuit. Component stability. Object and summary of the invention: In view of the above-mentioned background of the invention, when the thickness of the copper metal interconnect on the top layer is thickened, it will affect the blow-out step of the fuse structure. Therefore, one of the objectives of the present invention, The invention is to provide an aluminum-copper overlying connection structure and a manufacturing method thereof, which can solve the problem of difficulty in etching the dielectric layer of the fuse structure. Another object of the present invention is to provide a manufacturing method of a process window that makes it easier to control the thickness and quality of the topmost metal connection in the manufacture of integrated circuit components, and increases the metal inlay process in the copper process. 4 This paper size applies to China National Standard (CNS) A4 (210X297 mm) (please read the precautions on the back before filling this page), and printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 561583 A7
五、發明説明（） 根據以上的目的，本發明積體電路之链鋼披覆連線結 構之製造方法包括：提供一基材，此基材内係具有數個電 路元件並暴露出數個銅金屬内連線之表面；形成一介電層 於基材上，藉以覆蓋基材與銅金屬内連線；形成數個第一 開口於介電層中，藉以暴露銅金屬内連線之表面；形成一 阻障層於第一開口中，以覆蓋銅金屬内連線之表面；形成 一銘金屬層於阻障層上，並藉以填滿第一開口；以及，形 成一保護層於鋁金屬層上。本發明積體電路之鋁銅彼覆連 線結構之製造方法，更包括在形成上述之保護層之步驟 後，形成一第二開口於保護層上，藉以暴露出部分之鋁金 屬層。其中，上述之介電層可由例如二氧化矽或低介電係 數材料（Low K material)所構成，保護層係由氮化石夕或二氧 化石夕所構成，而上述之阻障層可由氮化組（TaN)所構成。另 外，上述之銅金屬内連線係利用一金屬鑲嵌製程 (Damascene Process)或一雙金屬鑲嵌製程（Dual Damascene Process)所形成，並做為熔絲結構、銲墊與連接導線之用， 而上述之第一開口可為溝渠（Trench)或介層窗（Via)結構。 經濟部智慧財產局員工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 因此，利用上述本發明之製造方法所形成之積體電路 之鋁銅彼覆連線結構包括：一基材，此基材中係具有數個 銅金屬内連線；一介電層位於基材上，此介電層並具有數 個開口以暴露出銅金屬内連線之表面；以及，一鋁金屬層 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 561583 A7 B7 五、發明説明（） 位於介電層之開口内，並覆蓋於銅金屬内連線之上。其中， 更包括在上述之銅金屬内連線與基材間，以及銅金屬内連 線與紹金屬層間具有阻障層（Barrier Layer)，而此阻障層可 由氮化鈕（TaN)所構成。而上述之銅金屬内連線係可為熔絲 結構、銲墊結構或連接導線的一部份，以及構成介電層之 材質可為例如二氧化矽或低介電係數材料。另外，依元件 或製程需要，本發明上述結構中的開口，可為溝渠或介層 窗之結構。並且，更可包括在上述之鋁金屬層上，具有由 氮化矽或二氧化矽所構成之保護層。 利用本發明鋁銅彼覆連線結構及其製造方法，可減少 銅金屬材料的使用，使銅金屬鑲嵌製程的製程窗增加，而 最頂層的金屬層厚度與品質控制較為容易，並使得熔絲結 構的燒斷步驟簡化，如此可提升製程的生產良率。 圖式簡單說明： 本發明的較佳實施例將於往後之說明文字中輔以下列 圖形做更詳細的闡述，其中： 第1圖所繪示為一般已製作完成的積體電路元件之結 構剖面圖； 第2圖至第5圖所繪示為本發明積體電路之鋁銅彼覆 6 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) 、可. 經濟部智慧財產局員工消費合作社印製 561583 A7 B7 五、發明説明（） 連線結構及其製造方法的流程示意圖； 第6圖至第8圖所繪示為本發明積體電路之鋁銅彼覆 連線結構及其製造方法的流程示意圖；以及 第9圖所繪示為本發明已製作完成的積體電路元件之 晶片上視圖。 圖號對照說明： 10 基材 12 第N層銅金屬連線 14 第（N-1)層銅金屬連線 16 第（N-2)層銅金屬連線 18 第（N-3)層銅金屬連線 20 第（N-4)層銅金屬連線 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 22 溶 絲 結構 100 基 材 102 銲 墊結 構 104 連 接 導線結構 106 炼 絲結 構 108 阻 障 層 110 銅 金屬 内 連 線 1 12 阻 障 層 1 14 銅 金屬 内 連 線 1 16 阻 障 層 1 18 銅 金屬 内 連 線 120 阻 障 層 122 銅 金屬 内 連 線 124 介 電 層 124a 介電層 126 開 σ 128 開 口 本紙張尺度適用中國國家標準(CNS)A4規格(210X 297公釐) 561583 A7V. Description of the invention () According to the above purpose, the manufacturing method of the chain-steel-clad connection structure of the integrated circuit of the present invention includes: providing a substrate having a plurality of circuit elements in the substrate and exposing a plurality of copper The surface of the metal interconnection; forming a dielectric layer on the substrate to cover the substrate and the copper metal interconnection; forming a plurality of first openings in the dielectric layer to expose the surface of the copper metal interconnection; Forming a barrier layer in the first opening to cover the surface of the copper metal interconnect; forming a metal layer on the barrier layer to fill the first opening; and forming a protective layer on the aluminum metal layer on. The manufacturing method of the aluminum-copper-on-cable connection structure of the integrated circuit of the present invention further includes forming a second opening on the protective layer after the step of forming the protective layer, thereby exposing a part of the aluminum metal layer. Wherein, the above-mentioned dielectric layer may be composed of, for example, silicon dioxide or a low-k material, the protective layer is composed of nitride nitride or dioxide, and the above-mentioned barrier layer may be nitrided. Group (TaN). In addition, the aforementioned copper metal interconnects are formed using a Damascene Process or a Dual Damascene Process, and are used for fuse structures, solder pads, and connecting wires. The first opening may be a trench or a via structure. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs (please read the precautions on the back before filling this page). Therefore, the aluminum-copper connection structure of the integrated circuit formed by the manufacturing method of the present invention includes the following: Material, the substrate has several copper metal interconnects; a dielectric layer is located on the substrate, the dielectric layer has several openings to expose the surface of the copper metal interconnects; and an aluminum metal The paper size of the paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 561583 A7 B7 V. Description of the invention () It is located in the opening of the dielectric layer and covers the copper metal interconnects. Among them, it further includes a barrier layer between the copper metal interconnect and the substrate, and between the copper metal interconnect and the metal layer, and the barrier layer may be composed of a nitride button (TaN). . The above-mentioned copper metal interconnects may be part of a fuse structure, a pad structure or a connecting wire, and the material constituting the dielectric layer may be, for example, silicon dioxide or a low-dielectric-constant material. In addition, depending on the needs of the component or process, the opening in the above structure of the present invention may be a trench or a via structure. In addition, it may further include a protective layer made of silicon nitride or silicon dioxide on the aluminum metal layer. By using the aluminum-copper overlying connection structure and the manufacturing method thereof, the use of copper metal materials can be reduced, the process window of the copper metal inlay process can be increased, and the thickness and quality control of the topmost metal layer is easier, and the fuse is made easier. The structure's burnout steps are simplified, which can improve the production yield of the process. Brief description of the drawings: The preferred embodiment of the present invention will be described in more detail in the following explanatory text with the following figures, where: Figure 1 shows the structure of an integrated circuit component that has been generally manufactured. Sectional drawing; Figures 2 to 5 show the aluminum-copper coating of the integrated circuit of the present invention. 6 This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back first) (Fill in this page again). Yes. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 561583 A7 B7 V. Description of the invention () Schematic diagram of the connection structure and its manufacturing method; Figures 6 to 8 The schematic flow chart of the aluminum-copper overlying connection structure of the invented integrated circuit and the manufacturing method thereof; and FIG. 9 is a top view of the wafer of the integrated circuit component that has been manufactured according to the present invention. Drawing number comparison description: 10 substrate 12 layer N copper metal connection 14 layer (N-1) copper metal connection 16 layer (N-2) copper metal connection 18 layer (N-3) copper metal Connection 20 (N-4) layer copper metal connection (Please read the precautions on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 22 Printed wire structure 100 Substrate 102 Pad structure 104 Connection Wire structure 106 Spun wire structure 108 Barrier layer 110 Copper metal interconnect 1 12 Barrier layer 1 14 Copper metal interconnect 1 16 Barrier layer 1 18 Copper metal interconnect 120 Barrier layer 122 Copper metal interconnect 124 Dielectric layer 124a Dielectric layer 126 Open σ 128 Open This paper size applies to China National Standard (CNS) A4 (210X 297 mm) 561583 A7
134 138 142 146 150 252 256 260 阻障層 阻障層 阻障層 鋁金屬層 開口 打線銲墊 連接導線 基材 136 140 144 148 250 254 258 銘金屬層 鋁金屬層 阻障層 保護層 積體電路元件晶片 活動凸塊銲墊 熔絲結構 (請先閲讀背面之注意事項再填寫本頁)134 138 142 146 150 252 256 260 Barrier layer Barrier layer Barrier layer Aluminum metal layer Open wire bonding pads Connection wire base material 136 140 144 148 250 254 258 Metal layer Aluminum metal layer Barrier layer Protective layered circuit element Wafer movable bump pad fuse structure (Please read the precautions on the back before filling this page)
發明詳細說明： 斤謂的積體電路’就是把特定電路所需的各種電子元 件及線路，縮小製作在大小約2平方公分以下面積的一種 產⑽八中包s 了數以萬計的元件與相連的線路。去 晶圓上的積體電路元件製作完成後，會送往封裝廠，將： 圓切割為晶片後，再進行積體電路元件的封裝製程。第又 圖所繪示為一般已製作完成的積體電路元件之結構剖面 圖。請參照第1圖，一般銅製程的積體電路元件製造中， 若將最頂層的金屬連線層稱為第N層，則通常把熔絲結構 22製作在第（N-2)層。而燒斷熔絲結構22的步驟係包括先 將熔絲結構22上方的介電層去除，再利用雷射將熔絲結構 22最頂層的金屬連線燒斷。由於積體電路元件的種類不 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 訂 經濟部智慧財產局員工消費合作社印製 561583 A7 ----------— B7______ 五、發明説明（） (請先閲讀背面之注意事項再填寫本頁) 同，其中-種產品必須將第N層銅金屬連線i2的厚度辦 厚，因此當燒斷炼絲結構22的步驟進行時，介電層的去J； 厚度也加深’因此而面臨到控制上的難題。另外，由於第 N層銅金屬連線12的厚度控制也不容易，因此本發明提供 一種積體電路之铭銅坡覆連線結構及其製造方法，以解決 習知技術所面臨到的問題。 ' 經濟部智慧財產局員工消費合作社印製 第2圖至第5圖所繪示為本發明積體電路之叙銅彼覆 連線結構及其製造方法的流程示意圖。請參照第2圖，首 先基材100已完成積體電路所需電子元件與線路製造，並 在基材100的表面暴露出電子元件與線路中，鋼金屬層的 表面。其中，係包含做為銲墊結構！ 〇2的銅金屬内連線 1 1 〇、做為連接導線結構1 04的銅金屬内連線丨丨4、以及做 為炼絲結構1 06的銅金屬内連線丨丨8、與銅金屬内連線 122。另外，一般會在銅金屬材料與矽材料間形成一層阻障 材料，例如氮化钽，藉以防止鋼金屬的擴散現象。因此， 分別在銅金屬内連線110、銅金屬内連線114、銅金屬内連 線118、銅金屬内連線122、與基材10〇間，形成阻障層 1 0 8、阻障層1 1 2、阻障層1 1 6、與阻障層i 2 〇。接著，形 成一介電層124於基材100上，以覆蓋基材丨〇〇與銅金屬 内連線110、銅金屬内連線114、銅金屬内連線ns、銅金 屬内連線122的表面。上述·之介電層124可利用二氧化石夕 或低介電係數材料所構成。適用於鋼製程中的低介電係數 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 561583 A7Detailed description of the invention: “Integrated circuit” is a variety of electronic components and circuits required for a specific circuit, reduced to a size of about 2 square centimeters or less. It has tens of thousands of components and Connected lines. After the fabrication of the integrated circuit components on the wafer is completed, it will be sent to the packaging factory to cut the circle into wafers and then perform the packaging process of the integrated circuit components. The second figure shows a cross-sectional view of the structure of a conventional integrated circuit component. Please refer to FIG. 1. In the manufacture of integrated circuit components in a general copper process, if the topmost metal connection layer is referred to as the Nth layer, the fuse structure 22 is usually fabricated on the (N-2) th layer. The step of blowing out the fuse structure 22 includes removing the dielectric layer above the fuse structure 22 and then using a laser to blow out the topmost metal connection of the fuse structure 22. Because the types of integrated circuit components are not the same as the paper size, the Chinese National Standard (CNS) A4 specification (210X297 mm) is applicable. Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives 561583 A7 ------------ B7______ V. Description of the invention () (Please read the precautions on the back before filling this page) Same, among them-one kind of product must thicken the thickness of the Nth layer copper metal connection i2, so when the step 22 of the skeined structure is burned out As the process progresses, the thickness of the dielectric layer is reduced; the thickness is also deepened. Therefore, it is difficult to control. In addition, since the thickness control of the N-th layer copper-metal connection 12 is not easy, the present invention provides a copper slope-covered connection structure of an integrated circuit and a manufacturing method thereof to solve the problems faced by the conventional technology. '' Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Figures 2 to 5 are schematic diagrams showing the copper-clad connection structure of the integrated circuit of the present invention and its manufacturing method. Please refer to FIG. 2. First, the substrate 100 has completed the manufacture of electronic components and circuits required for integrated circuits, and the surface of the substrate 100 exposes the surface of the steel metal layer in the electronic components and circuits. Among them, the system is included as a pad structure! 〇2 copper metal interconnects 1 1 〇, copper metal interconnects used to connect the lead structure 104 04, and copper metal interconnects 106 used as the wire structure 丨 8 and copper metal内线 122. In addition, a barrier material, such as tantalum nitride, is generally formed between the copper metal material and the silicon material to prevent the diffusion of the steel metal. Therefore, a barrier layer 108 and a barrier layer are formed between the copper metal interconnect 110, the copper metal interconnect 114, the copper metal interconnect 118, the copper metal interconnect 122, and the substrate 100, respectively. 1 1 2. Barrier layer 1 1 6 and barrier layer i 2 〇. Next, a dielectric layer 124 is formed on the substrate 100 to cover the substrate and the copper metal interconnect 110, copper metal interconnect 114, copper metal interconnect ns, and copper metal interconnect 122. surface. The above-mentioned dielectric layer 124 may be made of SiO2 or a low dielectric constant material. Suitable for low dielectric constant in steel manufacturing process. This paper size is applicable to China National Standard (CNS) A4 (210X297 mm) 561583 A7.
五、發明説明（） 材料可分為有機介電材料與無機介電材料，其中，有機介 電材料例如為有機矽酸鹽類、旋塗式玻璃（Spi心0n Glass) 材料、與有機南分子材料等，而無機介電材料則例如為無 機含氫矽酸鹽類（Hydrogen Silsesqui〇xane ; HSQ)等。值得 注意的是，上述介電層1 24可使用之材料僅為舉例，本發 明不限於此。 請參照第3圖，進行一蝕刻步驟，去除部分介電層 124，並形成開口 126、開口 128、開口 no、與開口 132 於介電層124a中，藉以暴露上述銅金屬内連線n〇、銅金 屬内連線114、銅金屬内連線118、銅金屬内連線122的表 面。在本發明一實施例中，銲墊結構1 〇2所形成的開口 i 26 與連接導線結構1 0 4所形成的開口 1 2 8亦為溝渠結構，而 熔絲結構1 06所形成的開口 1 3 〇與開口 1 3 2係為介層窗結 構。上述開口之結構與形成製程可依實際產品於製程需要 而加以改變，本發明不限於此。 接著’請參照第4圖，形成链金屬材料於銅金屬材料 上，以形成本發明鋁銅彼覆連線之結構。亦即於銲塾結構 102中形成鋁金屬層136於銅金屬内連線11〇上，於連接 導線結構1 0 4中形成鋁金屬層1 4 0於銅金屬内連線i i 4 上，而在熔絲結構1 〇 6中，形成鋁金屬層1 4 6於銅金屬内 連線118與銅金屬内連線122上。接著，為防止銅金屬的 本紙張尺度適用中國國家標準(CNS)A4規格(210Χ 297公釐) ..............费： (請先閲讀背面之注意事項再填寫本頁) 、νά % 經濟部智慧財產局員工消費合作社印製 561583 A7 _____B7 五、發明説明（） 擴散現象，本發明更在鋼金屈分少L & ^ , 兔屬材枓與矽材料間形成一層阻 障材料。因此，如第4圖所示，分別在銅金屬内連線曰110 (請先閲讀背面之注意事項再填寫本頁) 與鋁金屬I 136間形成阻障層134,在銅金屬内連線 與鋁金屬層14〇間形成阻障層丨3 8这A h 早嘈1 3 8 ,以及在銅金屬内連線 118與鋁金屬層146間形成阻障層142，以及在與鋼金屬内 連線i22與铭金屬層146間形成阻障層144，如此一來， 即完成本發明積體電路之铭鋼披覆連線結構。在本發明一 車交佳實施例中，上述之阻障層的材料係利用敗化組材料， 此隔離銅金屬材料與鋁金屬材料間的阻障層材料可視產品 需要而加以改變，本發明不限於此。 隨後，請參照第5圖，本發明為保護金屬材料的表面， 因此更可在第4圖之結構上形成一層保護層148，再進行 一定義步驟，藉以定義出銲墊結構1〇2上的開口 15〇，以 做為後續積體電路封裝製程中之連線所需。 經濟部智慧財產局員工消費合作社印製 另外，於本發明一較佳實施例中，可利用介層窗製程 來製造上述第3圖銲墊結構1〇2與連接導線結構1〇4中， 連接於銅金屬内連線110與銅金屬内連線114上的開口 126 與開口 1 2 8。接著，再分別依上述方法形成阻障層、銅金 屬内連線層、以及保護層於開口與介電層上。此一較佳實 施例之製程結構剖面圖係如第6圖至第8圖所示。由於此 一較佳實施例所應用的方法步驟與上述實施例相同，僅有 π 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) 561583 A7 B7 五、發明説明（） 開口 1 2 6與開口 1 2 8之結構不同，故本發明不在此贅述製 造流程。另外，介層窗製程係為熟悉此技藝者所已知，本 發明亦不在此贅述。 本發明的特點在於已具有製作完成數個電路元件，並 暴露出銅金屬内連線表面的基材上，利用形成介電材料與 鋁金屬材料，以在銅金屬内連線上連接鋁金屬層，利用本 .發明上述之製造方法所製造的鋁銅彼覆連線結構係如第4 圖或第7圖所示。請參照第4圖或第7圖，在本發明鋁銅 彼覆連線結構中，基材1 00上係包含數個電路元件，例如 輝塾結構102、連接導線結構104、與熔絲結構1〇6，並暴 路出上述結構的數個銅金屬内連線表面，例如鋼金屬内連 線110、銅金屬内連線114、銅金屬内連線118、與銅金屬 内連線122，其中上述之數個銅金屬内連線與基材1〇〇間 更具有第一阻障層，例如阻障層1 〇 8、阻障層1 1 2、阻障層 116、與阻障層120。另外，並有介電層124a位於基材1〇〇 上，其中介電層124a係具有數個第一開口，例如第3圖中 的開口 126、開口 128、開口 130、與開口 132，可暴露出 上述數個銅金屬内連線之表面。以及，鋁金屬材料位於上 述之第一開口中，例如鋁金屬層1 3 6、鋁金屬層1 4 〇、與紹 金屬層1 46，藉以填滿上述第一開口，其中上述之鋁金屬 層與銅金屬内連線間更具有第二阻障層，例如阻障層丨3 4、 阻障層1 3 8、阻障層1 42與阻障層1 44。而本發明之結構更 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁) 身· % 經濟部智慧財產局員工消費合作社印製 561583 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（） 可具有一層保護層1 48以保護上述結構，係如第5圖或第8 圖所示。 本發明鋁銅披覆連線結構之連接導線結構丨〇4中，鋁 金屬層140的厚度加上銅金屬内連線114的厚度即為最頂 端銅金屬内連線的厚度，本發明利用形成鋁金屬層14〇來 加厚最頂端銅金屬内連線厚度的製程，較利用習知銅金屬 沈積製程易控制，不會造成如同銅金屬沈積過厚時，所產 生的缺陷與小凸起現象。另外，熔絲結構1 〇 6中，將熔絲 結構移往積體電路結構的最頂層，並利用鋁金屬層丨46做 為連接’後續僅要去除铭金屬層1 4 6即可達到燒斷溶絲結 構1 00的步驟，並不必像習知技術要先去除介電層才可進 行利用雷射破壞金屬層的燒斷步驟，可使得燒斷步驟較為 簡化。本發明鋁銅彼覆連線結構及其製造方法，除了上述 優點外，不但減少了銅金屬材料的使用，更使得鋼製程之 金屬鑲嵌製程的製程窗增加，使製程較為容易控制，而提 升生產良率。 第9圖所繪示為本發明已製作完成的積體電路元件之 晶片上視圖。請參照第9圖，在積體電路元件晶片250中 係以完成其中所需的元件與連線製作，而在晶片的最頂端 暴露出一些金屬連線結構，例如打線銲塾2 5 2、活動凸塊 銲墊254、連接導線256與熔絲結構258等等。其中積體 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐) (請先閲讀背面之注意事項再填寫本頁)5. Description of the invention () Materials can be divided into organic dielectric materials and inorganic dielectric materials. Among them, organic dielectric materials are, for example, organic silicates, spin-on glass materials, and organic molecules. Materials, and the inorganic dielectric materials are, for example, inorganic hydrogen silicates (HSQ). It is worth noting that the materials that can be used for the above-mentioned dielectric layer 124 are only examples, and the present invention is not limited thereto. Referring to FIG. 3, an etching step is performed to remove a part of the dielectric layer 124 and form openings 126, 128, no, and openings 132 in the dielectric layer 124a to expose the copper metal interconnects n0, Surfaces of the copper metal interconnect 114, the copper metal interconnect 118, and the copper metal interconnect 122. In an embodiment of the present invention, the opening i 26 formed by the pad structure 10 and the opening 1 2 8 formed by the connecting wire structure 104 are also trench structures, and the opening 1 formed by the fuse structure 106 30 and the opening 1 32 are interlayer window structures. The structure and forming process of the above openings may be changed according to actual product and process requirements, and the present invention is not limited thereto. Next, please refer to FIG. 4 to form a chain metal material on a copper metal material to form a structure of aluminum-copper overlying wires of the present invention. That is, an aluminum metal layer 136 is formed on the solder metal structure 102 on the copper metal interconnect 11 and an aluminum metal layer 1 40 is formed on the copper wire interconnect 104 on the copper metal interconnect ii 4. In the fuse structure 106, an aluminum metal layer 146 is formed on the copper metal interconnect 118 and the copper metal interconnect 122. Then, in order to prevent the copper paper's size from applying the Chinese National Standard (CNS) A4 specification (210 × 297 mm) ............. Fee: (Please read the precautions on the back before (Fill in this page), νά% Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 561583 A7 _____B7 V. Description of the invention () The phenomenon of diffusion, the present invention is more limited in steel and gold, L & ^, rabbit material and silicon materials A layer of barrier material is formed in between. Therefore, as shown in Fig. 4, a barrier layer 134 is formed between the copper metal interconnects (please read the precautions on the back before filling this page) and the aluminum metal I 136. A barrier layer is formed between the aluminum metal layer 140 and A 8, which is noisy 1 3 8, and a barrier layer 142 is formed between the copper metal interconnect 118 and the aluminum metal layer 146, and the interconnect is connected to the steel metal. A barrier layer 144 is formed between the i22 and the Ming metal layer 146. In this way, the Ming steel coated wiring structure of the integrated circuit of the present invention is completed. In a preferred embodiment of the present invention, the material of the above barrier layer is made of a degraded material. The material of the barrier layer between the copper metal material and the aluminum metal material may be changed according to the needs of the product. Limited to this. Subsequently, please refer to FIG. 5. The present invention protects the surface of the metal material. Therefore, a protective layer 148 can be formed on the structure of FIG. 4, and then a definition step is performed to define the pad structure 102. The opening 15 is used for wiring in the subsequent integrated circuit packaging process. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs In addition, in a preferred embodiment of the present invention, the interlayer window process can be used to manufacture the pad structure 102 and the connecting wire structure 104 in the above-mentioned FIG. Openings 126 and openings 1 2 on copper metal interconnect 110 and copper metal interconnect 114. Then, a barrier layer, a copper metal interconnect layer, and a protective layer are formed on the opening and the dielectric layer respectively according to the above method. A cross-sectional view of the process structure of this preferred embodiment is shown in FIGS. 6 to 8. Since the method and steps used in this preferred embodiment are the same as the above embodiment, only π This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) 561583 A7 B7 V. Description of the invention () Opening 1 2 The structure of 6 is different from the opening 1 2 8, so the present invention will not repeat the manufacturing process here. In addition, the manufacturing process of the interlayer window is known to those skilled in the art, and the present invention will not repeat them here. The invention is characterized in that it already has a number of circuit elements that have been fabricated and exposed the surface of the copper metal interconnects, and uses a dielectric material and an aluminum metal material to form an aluminum metal layer on the copper metal interconnects. As shown in FIG. 4 or FIG. 7, the aluminum-copper double-layer connection structure manufactured by the manufacturing method of the present invention is shown in FIG. 4 or FIG. 7. Please refer to FIG. 4 or FIG. 7. In the aluminum-copper overlying connection structure of the present invention, the substrate 100 includes a plurality of circuit elements, such as a fluorene structure 102, a connecting wire structure 104, and a fuse structure 1. 〇6, and exposed several copper metal interconnects of the above structure, such as steel metal interconnects 110, copper metal interconnects 114, copper metal interconnects 118, and copper metal interconnects 122, of which The above-mentioned copper metal interconnects and the substrate 100 further have a first barrier layer, such as the barrier layer 108, the barrier layer 112, the barrier layer 116, and the barrier layer 120. In addition, a dielectric layer 124a is located on the substrate 100. The dielectric layer 124a has several first openings, such as the opening 126, the opening 128, the opening 130, and the opening 132 in FIG. 3, which can be exposed. The surfaces of the above-mentioned several copper metal interconnects are obtained. And, the aluminum metal material is located in the first opening, such as the aluminum metal layer 136, the aluminum metal layer 1 40, and the metal layer 146, so as to fill the first opening, wherein the aluminum metal layer and the The copper metal interconnect also has a second barrier layer, such as the barrier layer 314, the barrier layer 138, the barrier layer 142 and the barrier layer 144. The structure of the present invention is adapted to the paper size of China National Standard (CNS) A4 (210X297 mm) (please read the precautions on the back before filling out this page).% Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs and Consumer Cooperatives 561583 Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention () It may have a protective layer 1 48 to protect the above structure, as shown in Figure 5 or Figure 8. In the connecting wire structure of the aluminum-copper clad wiring structure of the present invention, the thickness of the aluminum metal layer 140 plus the thickness of the copper metal interconnect 114 is the thickness of the top copper metal interconnect. The process of thickening the thickness of the top copper metal interconnect with the aluminum metal layer 14 is easier to control than the conventional copper metal deposition process, and does not cause defects and small bumps that occur when the copper metal is deposited too thick. . In addition, in the fuse structure 106, the fuse structure is moved to the top layer of the integrated circuit structure, and the aluminum metal layer 丨 46 is used as a connection. The step of dissolving the wire structure 100 does not need to remove the dielectric layer before performing the burn-out step of destroying the metal layer by laser as in the conventional technique, which can simplify the burn-out step. In addition to the advantages described above, the aluminum-copper overlying connection structure and the manufacturing method of the invention not only reduce the use of copper metal materials, but also increase the number of process windows for the metal inlaying process of the steel process, making it easier to control the process and improving production Yield. FIG. 9 is a top view of a wafer of the integrated circuit device that has been fabricated according to the present invention. Please refer to FIG. 9. The integrated circuit element wafer 250 is used to complete the required components and connections, and some metal connection structures are exposed at the top of the wafer, such as wire bonding pads 2 5 2. Activities The bump pad 254, the connecting wire 256 and the fuse structure 258, and the like. Among them, the size of this paper applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page)
561583 A7 B7 五、發明説明（） (請先閲讀背面之注意事項再填寫本頁) 電路元件晶片2 5 0雖然是利用銅金屬做為内連線結構，並 利用銅製程所製成，但在進行本發明鋁銅彼覆連線結構及 其製造方法後，打線銲墊2 5 2、活動凸塊銲墊2 5 4、連接導 線2 5 6與熔絲結構2 5 8的最頂層均以鋁金屬彼覆。因此由 第9圖之上視圖看來’在基材260表面所暴露的金屬結構， 例如打線銲墊2 5 2、活動凸塊銲墊2 5 4、連接導線2 5 6與熔 絲結構2 5 8，均是由鋁金屬材料所構成。 值得注意的是，本發明上述積體電路元件結構，例如 銲墊結構1 02、連接導線結構1 〇4、熔絲結構1 〇6、打線銲 墊252、活動凸塊銲墊254、連接導線256與熔絲結構258 等’其形狀、圖案、數量與大小均僅為舉例，本發明不限 於此。另外，本發明除了應用在鋁銅金屬披覆結構上外， 其他可應用於積體電路的任兩種金屬，例如銅、鋁、鶴、 鈦、金、與銀等金屬及其化合物等，也皆可應用於本發明 之結構及製造方法中，本發明不限於此。 經濟部智慧財產局員工消費合作社印製 如熟悉此技術之人員所瞭解的，以上所述僅為本發明 之較佳實施例而已，並非用以限定本發明之申請專利範 圍；凡其它未脫離本發明所揭示之精神下所完成之等效改 變或修飾，均應包含在下述之申請專利範圍内。 本紙張尺度適用中國國家標準(CNS)A4規格(210X297公釐)561583 A7 B7 V. Description of the invention () (Please read the precautions on the back before filling out this page) Circuit element wafer 2 5 0 Although it is made of copper metal as the interconnect structure and made of copper, it is After performing the aluminum-copper overlying connection structure and the manufacturing method thereof of the present invention, the top layers of the wire bonding pads 2 5 2, the movable bump bonding pads 2 5 4, the connecting wires 2 5 6 and the fuse structure 2 5 8 are all made of aluminum. Metal overlaid. Therefore, from the top view of FIG. 9, the metal structure exposed on the surface of the substrate 260, such as wire bonding pads 2 5 2, movable bump pads 2 5 4, connecting wires 2 5 6 and fuse structure 2 5 8, are made of aluminum metal materials. It is worth noting that the above-mentioned integrated circuit element structure of the present invention, such as a pad structure 102, a connecting wire structure 104, a fuse structure 106, a wire bonding pad 252, a movable bump pad 254, and a connecting wire 256 The shape, pattern, number, and size of the fuse structure 258 are only examples, and the present invention is not limited thereto. In addition, in addition to the aluminum-copper metal cladding structure, the present invention can be applied to any two metals of integrated circuits, such as copper, aluminum, crane, titanium, gold, silver, and other metals and their compounds. Both can be applied to the structure and manufacturing method of the present invention, and the present invention is not limited thereto. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. As understood by those familiar with this technology, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of patent application for the invention; Equivalent changes or modifications made under the spirit disclosed by the invention should all be included in the scope of patent application described below. This paper size applies to China National Standard (CNS) A4 (210X297 mm)