DE69315278T2 - Anschlussflächen-Struktur einer integrierten Schaltung und Verfahren zu ihrer Herstellung - Google Patents

Anschlussflächen-Struktur einer integrierten Schaltung und Verfahren zu ihrer Herstellung

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Publication number
DE69315278T2
DE69315278T2 DE69315278T DE69315278T DE69315278T2 DE 69315278 T2 DE69315278 T2 DE 69315278T2 DE 69315278 T DE69315278 T DE 69315278T DE 69315278 T DE69315278 T DE 69315278T DE 69315278 T2 DE69315278 T2 DE 69315278T2
Authority
DE
Germany
Prior art keywords
manufacture
integrated circuit
pad structure
pad
integrated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69315278T
Other languages
English (en)
Other versions
DE69315278D1 (de
Inventor
Frank R Bryant
Fusen E Chen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
SGS Thomson Microelectronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics Inc filed Critical SGS Thomson Microelectronics Inc
Application granted granted Critical
Publication of DE69315278D1 publication Critical patent/DE69315278D1/de
Publication of DE69315278T2 publication Critical patent/DE69315278T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/0347—Manufacturing methods using a lift-off mask
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05001—Internal layers
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    • H01L2224/05099—Material
    • H01L2224/05186—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/05187—Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05599—Material
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05666—Titanium [Ti] as principal constituent
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    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/05684—Tungsten [W] as principal constituent
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
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    • H01L2924/01013—Aluminum [Al]
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    • H01L2924/01014—Silicon [Si]
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    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
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    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/049—Nitrides composed of metals from groups of the periodic table
    • H01L2924/0494—4th Group
    • H01L2924/04941—TiN
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE69315278T 1992-07-27 1993-07-08 Anschlussflächen-Struktur einer integrierten Schaltung und Verfahren zu ihrer Herstellung Expired - Fee Related DE69315278T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/919,949 US5309025A (en) 1992-07-27 1992-07-27 Semiconductor bond pad structure and method

Publications (2)

Publication Number Publication Date
DE69315278D1 DE69315278D1 (de) 1998-01-02
DE69315278T2 true DE69315278T2 (de) 1998-04-02

Family

ID=25442921

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69315278T Expired - Fee Related DE69315278T2 (de) 1992-07-27 1993-07-08 Anschlussflächen-Struktur einer integrierten Schaltung und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
US (2) US5309025A (de)
EP (1) EP0583877B1 (de)
JP (1) JP3453170B2 (de)
DE (1) DE69315278T2 (de)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0730012A (ja) * 1993-07-09 1995-01-31 Fujitsu Ltd 半導体装置
US5723822A (en) * 1995-03-24 1998-03-03 Integrated Device Technology, Inc. Structure for fabricating a bonding pad having improved adhesion to an underlying structure
US5703408A (en) * 1995-04-10 1997-12-30 United Microelectronics Corporation Bonding pad structure and method thereof
US5707894A (en) * 1995-10-27 1998-01-13 United Microelectronics Corporation Bonding pad structure and method thereof
US6049135A (en) 1996-05-28 2000-04-11 Kabushiki Kaisha Toshiba Bed structure underlying electrode pad of semiconductor device and method for manufacturing same
US5700735A (en) * 1996-08-22 1997-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming bond pad structure for the via plug process
JPH10223497A (ja) * 1997-01-31 1998-08-21 Shin Etsu Handotai Co Ltd 貼り合わせ基板の作製方法
US6143396A (en) * 1997-05-01 2000-11-07 Texas Instruments Incorporated System and method for reinforcing a bond pad
KR100230428B1 (ko) 1997-06-24 1999-11-15 윤종용 다층 도전성 패드를 구비하는 반도체장치 및 그 제조방법
WO1999038204A1 (fr) * 1998-01-23 1999-07-29 Rohm Co., Ltd. Interconnexion damasquinee et dispositif a semi-conducteur
US5985765A (en) * 1998-05-11 1999-11-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method for reducing bonding pad loss using a capping layer when etching bonding pad passivation openings
US6552438B2 (en) 1998-06-24 2003-04-22 Samsung Electronics Co. Integrated circuit bonding pads including conductive layers with arrays of unaligned spaced apart insulating islands therein and methods of forming same
US6163074A (en) * 1998-06-24 2000-12-19 Samsung Electronics Co., Ltd. Integrated circuit bonding pads including intermediate closed conductive layers having spaced apart insulating islands therein
US6187680B1 (en) 1998-10-07 2001-02-13 International Business Machines Corporation Method/structure for creating aluminum wirebound pad on copper BEOL
US6191023B1 (en) 1999-11-18 2001-02-20 Taiwan Semiconductor Manufacturing Company Method of improving copper pad adhesion
US6365970B1 (en) 1999-12-10 2002-04-02 Silicon Integrated Systems Corporation Bond pad structure and its method of fabricating
KR100400047B1 (ko) * 2001-11-19 2003-09-29 삼성전자주식회사 반도체 소자의 본딩패드 구조 및 그 형성방법
US6877534B1 (en) 2002-11-06 2005-04-12 Collins L. Hendrickson, Jr. Debris collection stand
TWI262347B (en) * 2004-08-02 2006-09-21 Hannstar Display Corp Electrical conducting structure and liquid crystal display device comprising the same
EP1635399B1 (de) * 2004-09-08 2011-05-04 STMicroelectronics Srl Laterale MOS-Anordnung und Verfahren zu deren Herstellung
US7573115B2 (en) * 2006-11-13 2009-08-11 International Business Machines Corporation Structure and method for enhancing resistance to fracture of bonding pads
US8030778B2 (en) * 2007-07-06 2011-10-04 United Microelectronics Corp. Integrated circuit structure and manufacturing method thereof

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JPS6178151A (ja) * 1984-09-25 1986-04-21 Nec Corp 半導体装置
JPS61144851A (ja) * 1984-12-19 1986-07-02 Hitachi Ltd 半導体装置
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JPH02132836A (ja) * 1988-11-14 1990-05-22 Seiko Epson Corp 半導体装置
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Also Published As

Publication number Publication date
JPH06204281A (ja) 1994-07-22
EP0583877A1 (de) 1994-02-23
US5403777A (en) 1995-04-04
DE69315278D1 (de) 1998-01-02
JP3453170B2 (ja) 2003-10-06
US5309025A (en) 1994-05-03
EP0583877B1 (de) 1997-11-19

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