DE60035636D1 - Halbleiterspeicheranordnung - Google Patents

Halbleiterspeicheranordnung

Info

Publication number
DE60035636D1
DE60035636D1 DE60035636T DE60035636T DE60035636D1 DE 60035636 D1 DE60035636 D1 DE 60035636D1 DE 60035636 T DE60035636 T DE 60035636T DE 60035636 T DE60035636 T DE 60035636T DE 60035636 D1 DE60035636 D1 DE 60035636D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60035636T
Other languages
English (en)
Inventor
Katsuaki Matsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Application granted granted Critical
Publication of DE60035636D1 publication Critical patent/DE60035636D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4094—Bit-line management or control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
    • G11C2207/12—Equalization of bit lines
DE60035636T 1999-04-15 2000-03-09 Halbleiterspeicheranordnung Expired - Lifetime DE60035636D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11107737A JP2000298984A (ja) 1999-04-15 1999-04-15 半導体記憶装置

Publications (1)

Publication Number Publication Date
DE60035636D1 true DE60035636D1 (de) 2007-09-06

Family

ID=14466687

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60035636T Expired - Lifetime DE60035636D1 (de) 1999-04-15 2000-03-09 Halbleiterspeicheranordnung

Country Status (6)

Country Link
US (1) US6347057B1 (de)
EP (1) EP1045396B1 (de)
JP (1) JP2000298984A (de)
KR (1) KR100641855B1 (de)
DE (1) DE60035636D1 (de)
TW (1) TW464863B (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7245549B2 (en) 2003-03-14 2007-07-17 Fujitsu Limited Semiconductor memory device and method of controlling the semiconductor memory device
WO2004081945A1 (ja) * 2003-03-14 2004-09-23 Fujitsu Limited 半導体記憶装置、および半導体記憶装置の制御方法
US6917550B2 (en) 2003-04-01 2005-07-12 Oki Electric Industry Co., Ltd. Semiconductor memory device
KR100736648B1 (ko) * 2005-03-08 2007-07-09 후지쯔 가부시끼가이샤 반도체 기억 장치 및 반도체 기억 장치의 제어 방법
JP2007095264A (ja) * 2005-09-29 2007-04-12 Hynix Semiconductor Inc 共有ビットライン感知増幅器構造を有する半導体メモリ素子及びその駆動方法
JP2010176740A (ja) * 2009-01-28 2010-08-12 Elpida Memory Inc 半導体記憶装置
JP2014225267A (ja) * 2014-06-30 2014-12-04 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 電圧検知回路
KR20160069147A (ko) * 2014-12-08 2016-06-16 에스케이하이닉스 주식회사 데이터 감지 증폭기 및 이를 포함하는 메모리 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR950009234B1 (ko) 1992-02-19 1995-08-18 삼성전자주식회사 반도체 메모리장치의 비트라인 분리클럭 발생장치
JPH0757466A (ja) 1993-08-12 1995-03-03 Toshiba Corp 半導体集積回路
JPH07130175A (ja) 1993-09-10 1995-05-19 Toshiba Corp 半導体記憶装置
JPH08171796A (ja) 1994-12-16 1996-07-02 Toshiba Corp 半導体記憶装置
KR100396124B1 (ko) * 1996-02-28 2004-01-31 가부시끼가이샤 히다치 세이사꾸쇼 반도체장치
US5862089A (en) * 1997-08-14 1999-01-19 Micron Technology, Inc. Method and memory device for dynamic cell plate sensing with ac equilibrate
KR100266750B1 (ko) * 1997-11-20 2000-09-15 윤종용 행 프리 챠아지 시간을 줄일 수 있는 고밀도 반도체 메모리 장치
KR100261217B1 (ko) 1997-11-21 2000-07-01 윤종용 반도체 메모리장치의 셀 어레이 제어장치

Also Published As

Publication number Publication date
EP1045396A1 (de) 2000-10-18
US6347057B1 (en) 2002-02-12
KR100641855B1 (ko) 2006-11-03
KR20000071427A (ko) 2000-11-25
TW464863B (en) 2001-11-21
JP2000298984A (ja) 2000-10-24
EP1045396B1 (de) 2007-07-25

Similar Documents

Publication Publication Date Title
DE60129073D1 (de) Halbleiterspeicheranordnung
DE60006892D1 (de) Halbleiteranordnung
DE60102257D1 (de) Halbleiterspeicheranordnung
DE60238891D1 (de) Halbleiterspeicheranordnung
DE60222354D1 (de) Halbleiterspeicheranordnung
DE69935182D1 (de) Halbleiteranordnung
DE60121865D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE60034070D1 (de) Integrierte Halbleitervorrichtung
DE60126383D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE60122045D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE69912565D1 (de) Halbleiteranordnung
DE69937739D1 (de) Halbleitervorrichtung
DE69939799D1 (de) Eine Halbleiterspeichervorrichtung
DE69934853D1 (de) Halbleiterspeicheranordnung
DE69617391T2 (de) Halbleiterspeicheranordnung
DE60005959D1 (de) Halbleiteranordnung
DE69923374D1 (de) Halbleiteranordnung
DE69731015D1 (de) Halbleiterspeicheranordnung
DE69823427D1 (de) Halbleiterspeicheranordnung
DE60016104D1 (de) Nichtflüchtige Halbleiterspeicheranordnung
DE60100612D1 (de) Synchrone Halbleiterspeichervorrichtung
DE60107174D1 (de) Halbleiterspeicheranordnung
DE69902712D1 (de) Halbleiterspeicheranordnung
DE60033467D1 (de) Halbleiterspeicheranordnung
DE60115745D1 (de) Halbleiterspeicheranordnung

Legal Events

Date Code Title Description
8332 No legal effect for de