DE60003199T2 - Silikon basierte sensor-systeme - Google Patents
Silikon basierte sensor-systeme Download PDFInfo
- Publication number
- DE60003199T2 DE60003199T2 DE60003199T DE60003199T DE60003199T2 DE 60003199 T2 DE60003199 T2 DE 60003199T2 DE 60003199 T DE60003199 T DE 60003199T DE 60003199 T DE60003199 T DE 60003199T DE 60003199 T2 DE60003199 T2 DE 60003199T2
- Authority
- DE
- Germany
- Prior art keywords
- sensor system
- transducer element
- contact
- transducer
- support member
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229920001296 polysiloxane Polymers 0.000 title 1
- 239000012528 membrane Substances 0.000 claims description 21
- 229910000679 solder Inorganic materials 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 11
- 239000003990 capacitor Substances 0.000 claims description 10
- 238000007789 sealing Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910007637 SnAg Inorganic materials 0.000 claims description 5
- 229910007116 SnPb Inorganic materials 0.000 claims description 5
- 229920001940 conductive polymer Polymers 0.000 claims description 5
- 230000002787 reinforcement Effects 0.000 claims 1
- 230000003014 reinforcing effect Effects 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 22
- 229910052710 silicon Inorganic materials 0.000 abstract description 22
- 239000010703 silicon Substances 0.000 abstract description 22
- 238000000034 method Methods 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 239000000758 substrate Substances 0.000 abstract description 9
- 238000005516 engineering process Methods 0.000 abstract description 7
- 238000013461 design Methods 0.000 abstract description 2
- 239000007787 solid Substances 0.000 abstract description 2
- 238000010923 batch production Methods 0.000 abstract 1
- 238000005476 soldering Methods 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000010295 mobile communication Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 150000003071 polychlorinated biphenyls Chemical class 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/04—Microphones
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R25/00—Deaf-aid sets, i.e. electro-acoustic or electro-mechanical hearing aids; Electric tinnitus maskers providing an auditory perception
- H04R25/60—Mounting or interconnection of hearing aid parts, e.g. inside tips, housings or to ossicles
- H04R25/609—Mounting or interconnection of hearing aid parts, e.g. inside tips, housings or to ossicles of circuitry
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Acoustics & Sound (AREA)
- Signal Processing (AREA)
- Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
- Pressure Sensors (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Air Bags (AREA)
- Silicon Polymers (AREA)
Applications Claiming Priority (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DKPA199901254 | 1999-09-06 | ||
| DK125499 | 1999-09-06 | ||
| US39162899A | 1999-09-07 | 1999-09-07 | |
| US391628 | 1999-09-07 | ||
| US09/570,434 US6522762B1 (en) | 1999-09-07 | 2000-05-12 | Silicon-based sensor system |
| US570434 | 2000-05-12 | ||
| PCT/DK2000/000491 WO2001019134A2 (en) | 1999-09-06 | 2000-09-06 | Silicon-based sensor system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE60003199D1 DE60003199D1 (de) | 2003-07-10 |
| DE60003199T2 true DE60003199T2 (de) | 2004-07-01 |
Family
ID=27221189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE60003199T Expired - Lifetime DE60003199T2 (de) | 1999-09-06 | 2000-09-06 | Silikon basierte sensor-systeme |
Country Status (10)
| Country | Link |
|---|---|
| EP (1) | EP1214864B1 (enExample) |
| JP (2) | JP4459498B2 (enExample) |
| CN (1) | CN1203726C (enExample) |
| AT (1) | ATE242587T1 (enExample) |
| AU (1) | AU6984100A (enExample) |
| CA (1) | CA2383740C (enExample) |
| DE (1) | DE60003199T2 (enExample) |
| DK (1) | DK1214864T3 (enExample) |
| PL (1) | PL209935B1 (enExample) |
| WO (1) | WO2001019134A2 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007008518A1 (de) * | 2007-02-21 | 2008-08-28 | Infineon Technologies Ag | Modul mit einem ein bewegliches Element umfassenden Halbleiterchip |
| US7557417B2 (en) | 2007-02-21 | 2009-07-07 | Infineon Technologies Ag | Module comprising a semiconductor chip comprising a movable element |
| DE102008007682B4 (de) * | 2007-06-01 | 2014-05-28 | Infineon Technologies Ag | Modul mit einem Mikro-Elektromechanischen Mikrofon |
Families Citing this family (48)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6859542B2 (en) | 2001-05-31 | 2005-02-22 | Sonion Lyngby A/S | Method of providing a hydrophobic layer and a condenser microphone having such a layer |
| US6696645B2 (en) * | 2002-05-08 | 2004-02-24 | The Regents Of The University Of Michigan | On-wafer packaging for RF-MEMS |
| US7142682B2 (en) | 2002-12-20 | 2006-11-28 | Sonion Mems A/S | Silicon-based transducer for use in hearing instruments and listening devices |
| US7466835B2 (en) | 2003-03-18 | 2008-12-16 | Sonion A/S | Miniature microphone with balanced termination |
| JP2004356708A (ja) * | 2003-05-27 | 2004-12-16 | Hosiden Corp | 音響検出機構及びその製造方法 |
| CN100515119C (zh) * | 2003-08-12 | 2009-07-15 | 中国科学院声学研究所 | 一种用于硅微电容传声器中的芯片及其制备方法 |
| CN100499877C (zh) * | 2003-12-17 | 2009-06-10 | 中国科学院声学研究所 | 具有高灵敏度的用于硅微电容传声器的芯片及其制备方法 |
| DE102004011203B4 (de) * | 2004-03-04 | 2010-09-16 | Robert Bosch Gmbh | Verfahren zum Montieren von Halbleiterchips und entsprechende Halbleiterchipanordnung |
| JP4553611B2 (ja) | 2004-03-15 | 2010-09-29 | 三洋電機株式会社 | 回路装置 |
| DE102004051468A1 (de) * | 2004-10-22 | 2006-04-27 | Robert Bosch Gmbh | Verfahren zum Montieren von Halbleiterchips und entsprechende Halbleiterchipanordnung |
| JP4539450B2 (ja) * | 2004-11-04 | 2010-09-08 | オムロン株式会社 | 容量型振動センサ及びその製造方法 |
| DE102005008512B4 (de) * | 2005-02-24 | 2016-06-23 | Epcos Ag | Elektrisches Modul mit einem MEMS-Mikrofon |
| DE102005008511B4 (de) | 2005-02-24 | 2019-09-12 | Tdk Corporation | MEMS-Mikrofon |
| DE102005053767B4 (de) | 2005-11-10 | 2014-10-30 | Epcos Ag | MEMS-Mikrofon, Verfahren zur Herstellung und Verfahren zum Einbau |
| DE102005053765B4 (de) | 2005-11-10 | 2016-04-14 | Epcos Ag | MEMS-Package und Verfahren zur Herstellung |
| DE102005056759A1 (de) * | 2005-11-29 | 2007-05-31 | Robert Bosch Gmbh | Mikromechanische Struktur zum Empfang und/oder zur Erzeugung von akustischen Signalen, Verfahren zur Herstellung einer mikromechanischen Struktur und Verwendung einer mikromechanischen Struktur |
| CN101005718B (zh) * | 2006-01-16 | 2011-04-20 | 财团法人工业技术研究院 | 微型声学传感器及其制造方法 |
| JP4771290B2 (ja) * | 2006-07-19 | 2011-09-14 | ヤマハ株式会社 | 圧力センサの製造方法 |
| WO2008077517A1 (en) * | 2006-12-22 | 2008-07-03 | Sonion Mems A/S | Microphone assembly with underfill agent having a low coefficient of thermal expansion |
| JP4893380B2 (ja) * | 2007-03-09 | 2012-03-07 | ヤマハ株式会社 | コンデンサマイク装置 |
| JP2009081624A (ja) * | 2007-09-26 | 2009-04-16 | Rohm Co Ltd | 半導体センサ装置 |
| TWI336770B (en) * | 2007-11-05 | 2011-02-01 | Ind Tech Res Inst | Sensor |
| TWI365525B (en) * | 2007-12-24 | 2012-06-01 | Ind Tech Res Inst | An ultra thin package for a sensor chip of a micro electro mechanical system |
| EP2094028B8 (en) * | 2008-02-22 | 2017-03-29 | TDK Corporation | Miniature microphone assembly with solder sealing ring |
| JP5844155B2 (ja) * | 2008-10-14 | 2016-01-13 | ノールズ エレクトロニクス，リミテッド ライアビリティ カンパニー | 複数の変換器素子を含むマイクロフォン |
| WO2010135280A2 (en) * | 2009-05-18 | 2010-11-25 | Knowles Electronics, Llc | Microphone having reduced vibration sensitivity |
| KR101609270B1 (ko) | 2009-08-12 | 2016-04-06 | 삼성전자주식회사 | 압전형 마이크로 스피커 및 그 제조 방법 |
| DE102009047592B4 (de) * | 2009-12-07 | 2019-06-19 | Robert Bosch Gmbh | Verfahren zur Herstellung eines Siliziumzwischenträgers |
| IT1397976B1 (it) * | 2009-12-23 | 2013-02-04 | St Microelectronics Rousset | Trasduttore di tipo microelettromeccanico e relativo procedimento di assemblaggio. |
| JP2013093637A (ja) * | 2010-02-24 | 2013-05-16 | Panasonic Corp | 半導体装置及びその製造方法 |
| TWI491009B (zh) | 2010-10-08 | 2015-07-01 | 環旭電子股份有限公司 | 晶片級電磁干擾屏蔽結構及製造方法 |
| CN102456669B (zh) * | 2010-10-25 | 2015-07-22 | 环旭电子股份有限公司 | 芯片级电磁干扰屏蔽结构及制造方法 |
| CN102726065B (zh) * | 2010-12-30 | 2014-06-04 | 歌尔声学股份有限公司 | Mems麦克风及其封装方法 |
| JP5721452B2 (ja) * | 2011-01-27 | 2015-05-20 | ローム株式会社 | 静電容量型ｍｅｍｓセンサ |
| JP5799619B2 (ja) | 2011-06-24 | 2015-10-28 | 船井電機株式会社 | マイクロホンユニット |
| DE102011086722A1 (de) * | 2011-11-21 | 2013-05-23 | Robert Bosch Gmbh | Mikromechanische Funktionsvorrichtung, insbesondere Lautsprechervorrichtung, und entsprechendes Herstellungsverfahren |
| US20130147040A1 (en) * | 2011-12-09 | 2013-06-13 | Robert Bosch Gmbh | Mems chip scale package |
| DE102012203373A1 (de) * | 2012-03-05 | 2013-09-05 | Robert Bosch Gmbh | Mikromechanische Schallwandleranordnung und ein entsprechendes Herstellungsverfahren |
| US20140090485A1 (en) * | 2012-10-02 | 2014-04-03 | Robert Bosch Gmbh | MEMS Pressure Sensor Assembly |
| JP6426620B2 (ja) * | 2012-12-18 | 2018-11-21 | Tdk株式会社 | トップポートｍｅｍｓマイクロフォン及びその製造方法 |
| US20140312439A1 (en) * | 2013-04-19 | 2014-10-23 | Infineon Technologies Ag | Microphone Module and Method of Manufacturing Thereof |
| ITTO20130350A1 (it) | 2013-04-30 | 2014-10-31 | St Microelectronics Srl | Assemblaggio a livello di fetta di un dispositivo sensore mems e relativo dispositivo sensore mems |
| US9264832B2 (en) * | 2013-10-30 | 2016-02-16 | Solid State System Co., Ltd. | Microelectromechanical system (MEMS) microphone with protection film and MEMS microphonechips at wafer level |
| GB2542979B (en) * | 2014-06-10 | 2017-09-13 | Cirrus Logic Int Semiconductor Ltd | Packaging for MEMS transducers |
| US10455308B2 (en) * | 2014-09-17 | 2019-10-22 | Intel Corporation | Die with integrated microphone device using through-silicon vias (TSVs) |
| CN104780490A (zh) * | 2015-04-20 | 2015-07-15 | 歌尔声学股份有限公司 | 一种mems麦克风的封装结构及其制造方法 |
| TWI660466B (zh) * | 2017-04-26 | 2019-05-21 | Siliconware Precision Industries Co., Ltd. | 封裝結構及其製法 |
| CN111711903B (zh) * | 2020-06-24 | 2021-10-01 | 歌尔微电子有限公司 | 微型麦克风防尘装置及mems麦克风 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4533795A (en) * | 1983-07-07 | 1985-08-06 | American Telephone And Telegraph | Integrated electroacoustic transducer |
| US5490220A (en) * | 1992-03-18 | 1996-02-06 | Knowles Electronics, Inc. | Solid state condenser and microphone devices |
| US5889872A (en) * | 1996-07-02 | 1999-03-30 | Motorola, Inc. | Capacitive microphone and method therefor |
| US5856914A (en) * | 1996-07-29 | 1999-01-05 | National Semiconductor Corporation | Micro-electronic assembly including a flip-chip mounted micro-device and method |
| US5870482A (en) * | 1997-02-25 | 1999-02-09 | Knowles Electronics, Inc. | Miniature silicon condenser microphone |
-
2000
- 2000-09-06 AT AT00958265T patent/ATE242587T1/de active
- 2000-09-06 CN CNB008153809A patent/CN1203726C/zh not_active Expired - Lifetime
- 2000-09-06 JP JP2001522196A patent/JP4459498B2/ja not_active Expired - Fee Related
- 2000-09-06 WO PCT/DK2000/000491 patent/WO2001019134A2/en not_active Ceased
- 2000-09-06 CA CA002383740A patent/CA2383740C/en not_active Expired - Fee Related
- 2000-09-06 DE DE60003199T patent/DE60003199T2/de not_active Expired - Lifetime
- 2000-09-06 PL PL354095A patent/PL209935B1/pl unknown
- 2000-09-06 EP EP00958265A patent/EP1214864B1/en not_active Expired - Lifetime
- 2000-09-06 DK DK00958265T patent/DK1214864T3/da active
- 2000-09-06 AU AU69841/00A patent/AU6984100A/en not_active Abandoned
-
2006
- 2006-10-04 JP JP2006273173A patent/JP4303742B2/ja not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007008518A1 (de) * | 2007-02-21 | 2008-08-28 | Infineon Technologies Ag | Modul mit einem ein bewegliches Element umfassenden Halbleiterchip |
| US7557417B2 (en) | 2007-02-21 | 2009-07-07 | Infineon Technologies Ag | Module comprising a semiconductor chip comprising a movable element |
| DE102008007682B4 (de) * | 2007-06-01 | 2014-05-28 | Infineon Technologies Ag | Modul mit einem Mikro-Elektromechanischen Mikrofon |
| US8767983B2 (en) | 2007-06-01 | 2014-07-01 | Infineon Technologies Ag | Module including a micro-electro-mechanical microphone |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1214864B1 (en) | 2003-06-04 |
| WO2001019134A2 (en) | 2001-03-15 |
| PL354095A1 (en) | 2003-12-29 |
| CN1387741A (zh) | 2002-12-25 |
| JP4303742B2 (ja) | 2009-07-29 |
| JP2007028671A (ja) | 2007-02-01 |
| JP4459498B2 (ja) | 2010-04-28 |
| PL209935B1 (pl) | 2011-11-30 |
| WO2001019134A3 (en) | 2001-09-07 |
| AU6984100A (en) | 2001-04-10 |
| CA2383740A1 (en) | 2001-03-15 |
| DE60003199D1 (de) | 2003-07-10 |
| CA2383740C (en) | 2005-04-05 |
| ATE242587T1 (de) | 2003-06-15 |
| EP1214864A2 (en) | 2002-06-19 |
| DK1214864T3 (da) | 2003-08-25 |
| CN1203726C (zh) | 2005-05-25 |
| JP2003508998A (ja) | 2003-03-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8332 | No legal effect for de | ||
| 8370 | Indication related to discontinuation of the patent is to be deleted | ||
| 8364 | No opposition during term of opposition | ||
| 8328 | Change in the person/name/address of the agent |
Representative=s name: EPPING HERMANN FISCHER, PATENTANWALTSGESELLSCHAFT |
|
| 8327 | Change in the person/name/address of the patent owner |
Owner name: EPCOS PTE LTD, SINGAPORE, SG |