DE3829553A1 - Optischer aufzeichnungskopf - Google Patents
Optischer aufzeichnungskopfInfo
- Publication number
- DE3829553A1 DE3829553A1 DE3829553A DE3829553A DE3829553A1 DE 3829553 A1 DE3829553 A1 DE 3829553A1 DE 3829553 A DE3829553 A DE 3829553A DE 3829553 A DE3829553 A DE 3829553A DE 3829553 A1 DE3829553 A1 DE 3829553A1
- Authority
- DE
- Germany
- Prior art keywords
- light
- recording head
- emitting device
- light emitting
- optical recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/435—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material
- B41J2/447—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources
- B41J2/45—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by selective application of radiation to a printing material or impression-transfer material using arrays of radiation sources using light-emitting diode [LED] or laser arrays
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
- Led Device Packages (AREA)
Description
- 1. Wenn das LED-Chip nach Flip-Chip-Art auf dem transparen ten Substrat montiert wird, ist, im Gegensatz zu dem bekannten Herstellungsverfahren, kein Drahtbonden erfor derlich. Durch die geringere Anzahl von Produktions schritten sinken die Herstellungskosten.
- 2. Speziell bei Verwendung eines Glassubstrats läßt sich auf der Oberfläche des Substrats durch Dünnschichttech nik mühelos ein feines Muster bilden, da die Glasfläche äußerst eben und glatt ist. Weiterhin hat man ein Substrat zur Verfügung, das praktisch keine Biegungen oder Verformungen aufweist, so daß man eine hohe Posi tioniergenauigkeit für ein LED-Chip erreichen kann.
- 3. Da der montierte Zustand der lichtemittierenden Ein richtung von der Seite des Substrats her geprüft werden kann, erleichtert sich das Positionieren der lichtemit tierenden Einrichtung.
- 4. Da die optische Faser im Gegensatz zu dem selbstkonden sierenden Stablinsenfeld keinen Brennpunkt aufweist, läßt sich der Abstand zwischen einem lichtemittierenden Abschnitt der lichtemittierenden Einrichtung und einem zu belichtenden Gegenstand verringern, so daß die Größe des Geräts verkleinert werden kann.
- 5. Da praktisch sämtliches von dem lichtemittierenden Ab schnitt emittiertes Licht in das Faserbündel eingeleitet und wirksam auf den zu belichtenden Gegenstand gestrahlt wird, läßt sich die insgesamt benötigte Energie für die Lichtabgabe herabsetzen. Dadurch erhöht sich die Lebens dauer der lichtemittierenden Einrichtung.
- 6. Wenn zwischen das Substrat und die lichtemittierende Einrichtung eine Substanz mit hohem Brechungsvermögen eingebracht wird, verbessert sich der Wirkungsgrad der Lichtentnahme aus der lichtemittierenden Einrichtung, und man erreicht darüber hinaus eine Kühlwirkung für die lichtemittierende Einrichtung.
- 7. Wenn die Stirnseite des Faserbündels, die einem zu be lichtenden Gegenstand gegenüberliegt, mit einer gekrümm ten Fläche ausgebildet wird, besteht auch dann, wenn der zu belichtende Gegenstand das Faserbündel berührt, nicht die Gefahr, daß die Stirnseite des Faserbündels den Gegenstand beschädigt, da eine glatte Kontaktstelle zwischen Faserbündel und Gegenstand liegt.
- 8. Wenn man eine Gasausblaseinrichtung zum Ausblasen von Gas in der Nähe der optischen Faser vorsieht, läßt sich zwischen den optischen Fasern und einem zu belichtenden Gegenstand eine Lücke aufrechterhalten, indem das Gas gegen den Gegenstand geblasen wird. Die Lücke oder der Spalt ist also auf jeden Fall vorhanden.
Wie unter Bezugnahme auf die Fig. 5(A) und 5(B) zu sehen ist, werden Leitungsmuster 42 a und 42 b für die erste und die zweite Schicht der zweischichtigen flexiblen gedruckten Schaltung 42 auf zwei Polyimidfilmen ausgebildet, und dann werden die Leitungsmuster 42 a und 42 b geätzt, um ihre Kon takte freizulegen. Dann werden die beiden Polyimidfilme aufeinandergelegt, und es wird ein als Isolierschicht 52 dienender Polyimidfilm auf die zwei einander überlappenden Polyimidfilme gebracht, woraufhin die Leitungsmuster 42 a und 42 b entweder durch Schweißen mit starken Stromimpulsen oder durch Löten elektrisch verbunden werden, so daß eine flexi ble gedruckte Schaltung 42 mit in zwei Schichten liegenden Leitungsmustern fertig ist. Danach wird ein Abschnitt der ersten Polyimidschicht 42 c, welcher dem lichtemittierenden Abschnitt 43 a eines LED-Chips 43 gegenüberliegt, derart ausgeschnitten, daß von dem Abschnitt 43 a kommendes Licht direkt von einem Faserbündel 46 empfangen werden kann, ohne daß das Licht von der flexiblen Schaltung 42 abgefangen werden kann. Anschließend werden die Leitungsmuster 42 a auf der flexiblen Schaltung und das LED-Chip 43 nach dem TAB- Verfahren (tape automated bonding) elektrisch verbunden. Dann wird eine Faserplatte 41, in der ein Faserbündel 46 eingebettet ist, fest an der flexiblen Schaltung 42 ange bracht. Daraufhin wird Kunstharzmaterial 45 zwischen den lichtemittierenden Abschnitt 43 a des LED-Chips 43 und das Faserbündel 46 eingebracht. Schließlich wird auf die rück seitige Elektrode 43 b des LED-Chips 43 Silberpaste 44 aufge tragen, bevor schließlich die weitere flexible Schaltung 49 mit der rückwärtigen Elektrode 43 b durch Backen verbunden wird, um den Aufzeichnungskopf zu vervollständigen.
Claims (13)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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JP22000887A JP2521106B2 (ja) | 1987-09-02 | 1987-09-02 | 光書込みヘッド |
JP22000787A JPS6463172A (en) | 1987-09-02 | 1987-09-02 | Optical writing head |
JP28134387A JP2524507B2 (ja) | 1987-11-07 | 1987-11-07 | 光書込みヘッド |
JP62281345A JPH01122462A (ja) | 1987-11-07 | 1987-11-07 | 光書込みヘッド |
JP62281342A JPH01122459A (ja) | 1987-11-07 | 1987-11-07 | 光書込みヘッド |
JP62281344A JPH01122461A (ja) | 1987-11-07 | 1987-11-07 | 光書込みヘッド |
Publications (2)
Publication Number | Publication Date |
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DE3829553A1 true DE3829553A1 (de) | 1989-03-16 |
DE3829553C2 DE3829553C2 (de) | 1992-08-27 |
Family
ID=27553961
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3829553A Granted DE3829553A1 (de) | 1987-09-02 | 1988-08-31 | Optischer aufzeichnungskopf |
Country Status (3)
Country | Link |
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US (3) | US4929965A (de) |
DE (1) | DE3829553A1 (de) |
GB (3) | GB2209404B (de) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0402341A1 (de) * | 1989-03-06 | 1990-12-12 | Polaroid Corporation | Mit Faseroptik integrierter Druckkopf |
EP0562550A1 (de) * | 1992-03-23 | 1993-09-29 | Nec Corporation | Chipträger für optische Vorrichtung |
DE4221949A1 (de) * | 1992-07-02 | 1994-01-13 | Siemens Ag | Optischer Druckkopf |
EP0744635A1 (de) * | 1995-05-22 | 1996-11-27 | Motorola, Inc. | Bilderzeuger für eine Vorrichtung zur Bilddarstellung |
WO2002017405A1 (de) * | 2000-08-23 | 2002-02-28 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement und verfahren zu dessen herstellung, modul und vorrichtung mit einem solchen modul |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4929965A (en) * | 1987-09-02 | 1990-05-29 | Alps Electric Co. | Optical writing head |
US5266828A (en) * | 1988-10-14 | 1993-11-30 | Matsushita Electric Industrial Co., Ltd. | Image sensors with an optical fiber array |
DE68912512T2 (de) * | 1988-10-28 | 1994-05-26 | Matsushita Electric Ind Co Ltd | Halbleiterlaser-Vorrichtung. |
US5317344A (en) * | 1989-12-22 | 1994-05-31 | Eastman Kodak Company | Light emitting diode printhead having improved signal distribution apparatus |
US5015066A (en) * | 1990-05-29 | 1991-05-14 | Eastman Kodak Company | Multichannel waveguide print head with symmetric output |
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US5169056A (en) * | 1992-02-21 | 1992-12-08 | Eastman Kodak Company | Connecting of semiconductor chips to circuit substrates |
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GB2372633A (en) * | 2001-02-24 | 2002-08-28 | Mitel Semiconductor Ab | Flip-chip mounted optical device |
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Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2641540A1 (de) * | 1976-09-15 | 1978-03-16 | Siemens Ag | Halbleiterdiodeneinrichtung zur erzeugung oder zum empfang von strahlung |
JPS56115339A (en) * | 1980-02-16 | 1981-09-10 | Asahi Chem Ind Co Ltd | Composition of hydrocarbon polymer containing chlorine |
DE3333203A1 (de) * | 1982-09-14 | 1984-03-15 | Ricoh Co., Ltd., Tokyo | Optische schreibeinrichtung |
JPS60143982A (ja) * | 1983-12-29 | 1985-07-30 | Sanyo Electric Co Ltd | 発光ダイオ−ドヘツド |
JPS61189965A (ja) * | 1985-02-19 | 1986-08-23 | Oki Electric Ind Co Ltd | 光プリントヘツド |
JPS61209176A (ja) * | 1985-03-13 | 1986-09-17 | Oki Electric Ind Co Ltd | 光プリントヘツド |
JPS62178367A (ja) * | 1986-02-03 | 1987-08-05 | Sanyo Electric Co Ltd | 光プリンタヘツド |
DE3739964A1 (de) * | 1986-11-27 | 1988-06-09 | Alps Electric Co Ltd | Led-anordnungs-kopf |
JPH06127268A (ja) * | 1992-10-16 | 1994-05-10 | Tokai Kogyo Kk | 車両用ウインドモールディングとその製造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3761171A (en) * | 1972-02-17 | 1973-09-25 | Eastman Kodak Co | Negative-positive, positive-positive exposure station |
US3916420A (en) * | 1974-05-06 | 1975-10-28 | Ncr Co | Printer and display system |
US4297022A (en) * | 1979-12-03 | 1981-10-27 | Static Systems Corporation | Light pipe valve liquid crystal transmissive display for direct imaging on photosensitive materials |
JPS56104573A (en) * | 1980-01-24 | 1981-08-20 | Canon Inc | Picture recording device |
US4378956A (en) * | 1980-06-05 | 1983-04-05 | Lester Robert W | Direct imaging of information using light pipe displays |
US4342504A (en) * | 1980-08-25 | 1982-08-03 | Itek Corporation | LED-Fiber optic character printer |
EP0051886A1 (de) * | 1980-11-10 | 1982-05-19 | Agfa-Gevaert N.V. | Aufzeichnungsvorrichtung |
GB2099221B (en) * | 1981-05-26 | 1985-11-20 | Purdy Haydn Victor | Light emitting diode array devices and image transfer systems |
JPS5881181A (ja) * | 1981-11-06 | 1983-05-16 | Matsushita Electric Ind Co Ltd | 感熱記録ヘツド |
US4478504A (en) * | 1981-12-22 | 1984-10-23 | Minolta Camera Kabushiki Kaisha | Electrostatic recording apparatus |
EP0115088B1 (de) * | 1983-01-21 | 1986-12-30 | Agfa-Gevaert N.V. | Aufzeichnungsgerät |
DE3321346A1 (de) * | 1983-06-13 | 1984-12-13 | Philips Patentverwaltung Gmbh, 2000 Hamburg | Optischer druckkopf sowie drucker mit einem derartigen druckkopf |
DE3438949C2 (de) * | 1983-10-25 | 1994-03-10 | Canon Kk | Druckvorrichtung |
DE3514807C2 (de) * | 1984-04-25 | 1994-12-22 | Canon Kk | Vorrichtung mit einer Flüssigkristallzelle, zum Ansteuern einer Transistoranordnung |
DE3628819C2 (de) * | 1985-08-26 | 1994-02-17 | Futaba Denshi Kogyo Kk | Aussteuerungssvorrichtung für den Druckkopf einer optischen Schreibeinrichtung |
JPS6265057A (ja) * | 1985-09-16 | 1987-03-24 | ゼロツクス コ−ポレ−シヨン | 合成画像形成装置 |
US4807047A (en) * | 1985-10-04 | 1989-02-21 | Fujitsu Limited | Electro luminescence device and electrophotographic printing system using the same |
US4745416A (en) * | 1986-02-28 | 1988-05-17 | Mita Industrial Co., Ltd. | Laser beam printer with optical system for preventing ghost images |
US4728981A (en) * | 1986-07-11 | 1988-03-01 | Eastman Kodak Company | Imaging lens array and optical print head |
US4749120A (en) * | 1986-12-18 | 1988-06-07 | Matsushita Electric Industrial Co., Ltd. | Method of connecting a semiconductor device to a wiring board |
US4820013A (en) * | 1987-01-06 | 1989-04-11 | Alps Electric Co., Ltd. | LED array head |
US4929965A (en) * | 1987-09-02 | 1990-05-29 | Alps Electric Co. | Optical writing head |
-
1988
- 1988-08-04 US US07/228,886 patent/US4929965A/en not_active Expired - Fee Related
- 1988-08-31 GB GB8820595A patent/GB2209404B/en not_active Expired - Lifetime
- 1988-08-31 DE DE3829553A patent/DE3829553A1/de active Granted
-
1990
- 1990-04-13 US US07/509,004 patent/US5045867A/en not_active Expired - Fee Related
- 1990-04-13 US US07/509,109 patent/US5005029A/en not_active Expired - Fee Related
-
1991
- 1991-10-07 GB GB9121294A patent/GB2247959B/en not_active Expired - Lifetime
- 1991-10-07 GB GB9121295A patent/GB2247960B/en not_active Expired - Lifetime
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2641540A1 (de) * | 1976-09-15 | 1978-03-16 | Siemens Ag | Halbleiterdiodeneinrichtung zur erzeugung oder zum empfang von strahlung |
JPS56115339A (en) * | 1980-02-16 | 1981-09-10 | Asahi Chem Ind Co Ltd | Composition of hydrocarbon polymer containing chlorine |
DE3333203A1 (de) * | 1982-09-14 | 1984-03-15 | Ricoh Co., Ltd., Tokyo | Optische schreibeinrichtung |
JPS60143982A (ja) * | 1983-12-29 | 1985-07-30 | Sanyo Electric Co Ltd | 発光ダイオ−ドヘツド |
JPS61189965A (ja) * | 1985-02-19 | 1986-08-23 | Oki Electric Ind Co Ltd | 光プリントヘツド |
JPS61209176A (ja) * | 1985-03-13 | 1986-09-17 | Oki Electric Ind Co Ltd | 光プリントヘツド |
JPS62178367A (ja) * | 1986-02-03 | 1987-08-05 | Sanyo Electric Co Ltd | 光プリンタヘツド |
DE3739964A1 (de) * | 1986-11-27 | 1988-06-09 | Alps Electric Co Ltd | Led-anordnungs-kopf |
JPH06127268A (ja) * | 1992-10-16 | 1994-05-10 | Tokai Kogyo Kk | 車両用ウインドモールディングとその製造方法 |
Non-Patent Citations (1)
Title |
---|
IBM Technical Disclosure Bulletin, Vol. 17, Nr. 1, Juni 1974, S. 317 * |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0402341A1 (de) * | 1989-03-06 | 1990-12-12 | Polaroid Corporation | Mit Faseroptik integrierter Druckkopf |
EP0562550A1 (de) * | 1992-03-23 | 1993-09-29 | Nec Corporation | Chipträger für optische Vorrichtung |
DE4221949A1 (de) * | 1992-07-02 | 1994-01-13 | Siemens Ag | Optischer Druckkopf |
EP0744635A1 (de) * | 1995-05-22 | 1996-11-27 | Motorola, Inc. | Bilderzeuger für eine Vorrichtung zur Bilddarstellung |
WO2002017405A1 (de) * | 2000-08-23 | 2002-02-28 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement und verfahren zu dessen herstellung, modul und vorrichtung mit einem solchen modul |
US7446347B2 (en) | 2000-08-23 | 2008-11-04 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for the production thereof, module and device comprising a module of this type |
Also Published As
Publication number | Publication date |
---|---|
GB2247960A (en) | 1992-03-18 |
GB2209404B (en) | 1992-06-10 |
GB9121294D0 (en) | 1991-11-20 |
GB2247959B (en) | 1992-06-10 |
DE3829553C2 (de) | 1992-08-27 |
GB2247960B (en) | 1992-06-10 |
GB9121295D0 (en) | 1991-11-20 |
US5005029A (en) | 1991-04-02 |
GB2247959A (en) | 1992-03-18 |
US5045867A (en) | 1991-09-03 |
GB8820595D0 (en) | 1988-09-28 |
GB2209404A (en) | 1989-05-10 |
US4929965A (en) | 1990-05-29 |
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