DE3644655C2 - - Google Patents

Info

Publication number
DE3644655C2
DE3644655C2 DE3644655A DE3644655A DE3644655C2 DE 3644655 C2 DE3644655 C2 DE 3644655C2 DE 3644655 A DE3644655 A DE 3644655A DE 3644655 A DE3644655 A DE 3644655A DE 3644655 C2 DE3644655 C2 DE 3644655C2
Authority
DE
Germany
Prior art keywords
layer
gas
substrate
gaseous
starting material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3644655A
Other languages
German (de)
English (en)
Other versions
DE3644655A1 (de
Inventor
Eiji Takeuchi
Jun-Ichi Hanna
Isamu Yokohama Kanagawa Jp Shimizu
Masaaki Toride Ibaraki Jp Hirooka
Akira Yokohama Kanagawa Jp Sakai
Masao Urayasu Chiba Jp Ueki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60298047A external-priority patent/JPH0647732B2/ja
Priority claimed from JP61004374A external-priority patent/JPS62163321A/ja
Priority claimed from JP61004369A external-priority patent/JPS62163316A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3644655A1 publication Critical patent/DE3644655A1/de
Application granted granted Critical
Publication of DE3644655C2 publication Critical patent/DE3644655C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H10P14/3251—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H10P14/24—
    • H10P14/2922—
    • H10P14/2923—
    • H10P14/3211—
    • H10P14/3411—
    • H10P14/3442—
    • H10P14/3444—

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE19863644655 1985-12-28 1986-12-29 Verfahren zur bildung eines abgeschiedenen films Granted DE3644655A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60298047A JPH0647732B2 (ja) 1985-12-28 1985-12-28 堆積膜形成方法
JP61004374A JPS62163321A (ja) 1986-01-14 1986-01-14 堆積膜形成装置
JP61004369A JPS62163316A (ja) 1986-01-14 1986-01-14 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
DE3644655A1 DE3644655A1 (de) 1987-07-02
DE3644655C2 true DE3644655C2 (show.php) 1990-04-26

Family

ID=27276239

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19863644655 Granted DE3644655A1 (de) 1985-12-28 1986-12-29 Verfahren zur bildung eines abgeschiedenen films

Country Status (4)

Country Link
US (1) US4842897A (show.php)
DE (1) DE3644655A1 (show.php)
FR (1) FR2592396B1 (show.php)
GB (1) GB2185758B (show.php)

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JPH0624238B2 (ja) * 1985-04-16 1994-03-30 キヤノン株式会社 フォトセンサアレイの製造方法
NL8801379A (nl) * 1988-05-30 1989-12-18 Imec Inter Uni Micro Electr Werkwijze voor het vervaardigen van een dunne-filmtransistor en een dergelijke dunne-filmtransistor.
WO1993002468A1 (fr) * 1991-07-16 1993-02-04 Seiko Epson Corporation Appareil de deposition en phase vapeur par procede chimique, procede de formation de films semi-conducteurs et procede de production de dispositifs semi-conducteurs a mince film
US5571572A (en) * 1991-09-05 1996-11-05 Micron Technology, Inc. Method of depositing titanium carbonitride films on semiconductor wafers
US5946587A (en) * 1992-08-06 1999-08-31 Canon Kabushiki Kaisha Continuous forming method for functional deposited films
US5470768A (en) * 1992-08-07 1995-11-28 Fujitsu Limited Method for fabricating a thin-film transistor
EP0608633B1 (en) * 1993-01-28 1999-03-03 Applied Materials, Inc. Method for multilayer CVD processing in a single chamber
US5399379A (en) * 1993-04-14 1995-03-21 Micron Semiconductor, Inc. Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal titanium nitride films of low bulk resistivity
JPH09129557A (ja) * 1995-10-27 1997-05-16 Shin Etsu Handotai Co Ltd 薄膜の製造方法
WO1997022141A1 (en) * 1995-12-14 1997-06-19 Seiko Epson Corporation Method of manufacturing thin film semiconductor device, and thin film semiconductor device
US6391690B2 (en) 1995-12-14 2002-05-21 Seiko Epson Corporation Thin film semiconductor device and method for producing the same
US6121164A (en) * 1997-10-24 2000-09-19 Applied Materials, Inc. Method for forming low compressive stress fluorinated ozone/TEOS oxide film
EP0994515B1 (en) * 1998-10-12 2007-08-22 Kaneka Corporation Method of manufacturing silicon-based thin-film photoelectric conversion device
JP2002206168A (ja) * 2000-10-24 2002-07-26 Canon Inc シリコン系薄膜の形成方法、シリコン系半導体層の形成方法及び光起電力素子
US6774040B2 (en) * 2002-09-12 2004-08-10 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film
US20050215059A1 (en) * 2004-03-24 2005-09-29 Davis Ian M Process for producing semi-conductor coated substrate
KR20090007063A (ko) * 2007-07-13 2009-01-16 삼성에스디아이 주식회사 태양전지 및 이의 제조방법
CN102598312B (zh) 2009-11-05 2016-01-20 陶氏环球技术有限责任公司 N型硫属化物组合物的制备以及它们在光伏器件中的使用

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GB1118579A (en) * 1967-04-21 1968-07-03 Standard Telephones Cables Ltd A method of and apparatus for growing an epitaxial layer of semiconductive material on a surface of a semiconductive substrate
US3473978A (en) * 1967-04-24 1969-10-21 Motorola Inc Epitaxial growth of germanium
US3549411A (en) * 1967-06-27 1970-12-22 Texas Instruments Inc Method of preparing silicon nitride films
DE1769605A1 (de) * 1968-06-14 1971-07-01 Siemens Ag Verfahren zum Herstellen epitaktischer Aufwachsschichten aus Halbleitermaterial fuer elektrische Bauelemente
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EP0228910B1 (en) * 1985-12-28 1991-07-31 Canon Kabushiki Kaisha Apparatus for forming deposited film
JPH084071B2 (ja) * 1985-12-28 1996-01-17 キヤノン株式会社 堆積膜形成法
JPH084072B2 (ja) * 1986-01-14 1996-01-17 キヤノン株式会社 堆積膜形成法
AU7077087A (en) * 1986-03-31 1987-10-08 Canon Kabushiki Kaisha Forming a deposited film
JP3224040B2 (ja) * 1992-07-24 2001-10-29 日本カーバイド工業株式会社 視認性のよい再帰反射シート

Also Published As

Publication number Publication date
US4842897A (en) 1989-06-27
GB2185758B (en) 1990-09-05
DE3644655A1 (de) 1987-07-02
GB2185758A (en) 1987-07-29
GB8630844D0 (en) 1987-02-04
FR2592396A1 (fr) 1987-07-03
FR2592396B1 (fr) 1989-03-17

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition