FR2592396A1 - Procede pour former un film depose. - Google Patents

Procede pour former un film depose.

Info

Publication number
FR2592396A1
FR2592396A1 FR8618274A FR8618274A FR2592396A1 FR 2592396 A1 FR2592396 A1 FR 2592396A1 FR 8618274 A FR8618274 A FR 8618274A FR 8618274 A FR8618274 A FR 8618274A FR 2592396 A1 FR2592396 A1 FR 2592396A1
Authority
FR
France
Prior art keywords
forming
deposited
film
substrate
starting material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8618274A
Other languages
English (en)
Other versions
FR2592396B1 (fr
Inventor
Eiji Takeuchi
Jun-Ichi Hanna
Isamu Shimizu
Masaaki Hirooka
Akira Sakai
Masao Ueki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP60298047A external-priority patent/JPH0647732B2/ja
Priority claimed from JP61004374A external-priority patent/JPS62163321A/ja
Priority claimed from JP61004369A external-priority patent/JPS62163316A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of FR2592396A1 publication Critical patent/FR2592396A1/fr
Application granted granted Critical
Publication of FR2592396B1 publication Critical patent/FR2592396B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02425—Conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02441—Group 14 semiconducting materials
    • H01L21/0245—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

L'invention concerne un procédé pour former un film déposé sur un substrat. Il consiste à introduire dans un espace réactionnel une matière gazeuse de départ convenant à la formation d'un film déposé et un oxydant gazeux contenant un halogène qui produit une action d'oxydation sur la matière de départ afin d'établir un contact chimique avec elle et de former ainsi un certain nombre de précurseurs dans un état oxydé qui sont ensuite utilisés comme source d'alimentation pour l'élément constitutif du film déposé sur le substrat. Domaine d'application : fabrication de transistors à couches minces, de piles solaires, d'éléments photoconducteurs, d'éléments photovoltaïques, etc. (CF DESSIN DANS BOPI)
FR868618274A 1985-12-28 1986-12-29 Procede pour former un film depose. Expired FR2592396B1 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60298047A JPH0647732B2 (ja) 1985-12-28 1985-12-28 堆積膜形成方法
JP61004374A JPS62163321A (ja) 1986-01-14 1986-01-14 堆積膜形成装置
JP61004369A JPS62163316A (ja) 1986-01-14 1986-01-14 半導体素子の製造方法

Publications (2)

Publication Number Publication Date
FR2592396A1 true FR2592396A1 (fr) 1987-07-03
FR2592396B1 FR2592396B1 (fr) 1989-03-17

Family

ID=27276239

Family Applications (1)

Application Number Title Priority Date Filing Date
FR868618274A Expired FR2592396B1 (fr) 1985-12-28 1986-12-29 Procede pour former un film depose.

Country Status (4)

Country Link
US (1) US4842897A (fr)
DE (1) DE3644655A1 (fr)
FR (1) FR2592396B1 (fr)
GB (1) GB2185758B (fr)

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JPH0624238B2 (ja) * 1985-04-16 1994-03-30 キヤノン株式会社 フォトセンサアレイの製造方法
NL8801379A (nl) * 1988-05-30 1989-12-18 Imec Inter Uni Micro Electr Werkwijze voor het vervaardigen van een dunne-filmtransistor en een dergelijke dunne-filmtransistor.
JP3507072B2 (ja) * 1991-07-16 2004-03-15 セイコーエプソン株式会社 化学気相推積装置及び半導体膜形成方法と薄膜半導体装置の製造方法
US5571572A (en) * 1991-09-05 1996-11-05 Micron Technology, Inc. Method of depositing titanium carbonitride films on semiconductor wafers
US5946587A (en) * 1992-08-06 1999-08-31 Canon Kabushiki Kaisha Continuous forming method for functional deposited films
US5470768A (en) * 1992-08-07 1995-11-28 Fujitsu Limited Method for fabricating a thin-film transistor
EP0608633B1 (fr) * 1993-01-28 1999-03-03 Applied Materials, Inc. Procédé de dépÔt par CVD d'une structure multicouche dans une unique chambre de dépÔt
US5399379A (en) * 1993-04-14 1995-03-21 Micron Semiconductor, Inc. Low-pressure chemical vapor deposition process for depositing high-density, highly-conformal titanium nitride films of low bulk resistivity
JPH09129557A (ja) * 1995-10-27 1997-05-16 Shin Etsu Handotai Co Ltd 薄膜の製造方法
US6391690B2 (en) 1995-12-14 2002-05-21 Seiko Epson Corporation Thin film semiconductor device and method for producing the same
WO1997022141A1 (fr) * 1995-12-14 1997-06-19 Seiko Epson Corporation Procede de fabrication d'un film semi-conducteur mince et dispositif obtenu par ce procede
US6121164A (en) * 1997-10-24 2000-09-19 Applied Materials, Inc. Method for forming low compressive stress fluorinated ozone/TEOS oxide film
US6265288B1 (en) * 1998-10-12 2001-07-24 Kaneka Corporation Method of manufacturing silicon-based thin-film photoelectric conversion device
JP2002206168A (ja) * 2000-10-24 2002-07-26 Canon Inc シリコン系薄膜の形成方法、シリコン系半導体層の形成方法及び光起電力素子
US6774040B2 (en) * 2002-09-12 2004-08-10 Applied Materials, Inc. Apparatus and method for surface finishing a silicon film
US20050215059A1 (en) * 2004-03-24 2005-09-29 Davis Ian M Process for producing semi-conductor coated substrate
KR20090007063A (ko) * 2007-07-13 2009-01-16 삼성에스디아이 주식회사 태양전지 및 이의 제조방법
US8603581B2 (en) * 2009-11-05 2013-12-10 Dow Global Technologies Llc Manufacture of n-type chalcogenide compositions and their uses in photovoltaic devices

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JPS5989410A (ja) * 1982-11-15 1984-05-23 Semiconductor Energy Lab Co Ltd 気相反応方法
JPS5994812A (ja) * 1982-11-24 1984-05-31 Agency Of Ind Science & Technol 半導体薄膜の製造方法

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Also Published As

Publication number Publication date
FR2592396B1 (fr) 1989-03-17
US4842897A (en) 1989-06-27
GB2185758B (en) 1990-09-05
DE3644655C2 (fr) 1990-04-26
DE3644655A1 (de) 1987-07-02
GB2185758A (en) 1987-07-29
GB8630844D0 (en) 1987-02-04

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