CA934523A - Process for forming a ternary material on a substrate - Google Patents
Process for forming a ternary material on a substrateInfo
- Publication number
- CA934523A CA934523A CA104053A CA104053A CA934523A CA 934523 A CA934523 A CA 934523A CA 104053 A CA104053 A CA 104053A CA 104053 A CA104053 A CA 104053A CA 934523 A CA934523 A CA 934523A
- Authority
- CA
- Canada
- Prior art keywords
- substrate
- forming
- ternary material
- ternary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4488—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by in situ generation of reactive gas by chemical or electrochemical reaction
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP877870A JPS4937359B1 (en) | 1970-01-30 | 1970-01-30 | |
JP12469970A JPS5014640B1 (en) | 1970-12-29 | 1970-12-29 | |
JP12472170 | 1970-12-29 | ||
JP12482370A JPS4816437B1 (en) | 1970-12-29 | 1970-12-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
CA934523A true CA934523A (en) | 1973-10-02 |
Family
ID=27455019
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CA104053A Expired CA934523A (en) | 1970-01-30 | 1971-01-29 | Process for forming a ternary material on a substrate |
Country Status (4)
Country | Link |
---|---|
CA (1) | CA934523A (en) |
DE (1) | DE2104329C3 (en) |
GB (1) | GB1327836A (en) |
NL (1) | NL7101215A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS514918B1 (en) * | 1971-05-04 | 1976-02-16 | ||
FR2419585A1 (en) * | 1978-03-07 | 1979-10-05 | Thomson Csf | PROCESS FOR OBTAINING IN THE GASEOUS PHASE OF AN EPITAXIAL LAYER OF INDIUM PHOSPHIDE, AND APPARATUS FOR APPLYING THIS PROCESS |
GB2185758B (en) * | 1985-12-28 | 1990-09-05 | Canon Kk | Method for forming deposited film |
-
1971
- 1971-01-29 CA CA104053A patent/CA934523A/en not_active Expired
- 1971-01-29 NL NL7101215A patent/NL7101215A/xx unknown
- 1971-01-29 DE DE19712104329 patent/DE2104329C3/en not_active Expired
- 1971-04-19 GB GB2046771A patent/GB1327836A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE2104329A1 (en) | 1971-08-05 |
GB1327836A (en) | 1973-08-22 |
DE2104329C3 (en) | 1975-04-17 |
NL7101215A (en) | 1971-08-03 |
DE2104329B2 (en) | 1974-08-15 |
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