DE3533870A1 - Halbleiterspeichereinheit - Google Patents

Halbleiterspeichereinheit

Info

Publication number
DE3533870A1
DE3533870A1 DE19853533870 DE3533870A DE3533870A1 DE 3533870 A1 DE3533870 A1 DE 3533870A1 DE 19853533870 DE19853533870 DE 19853533870 DE 3533870 A DE3533870 A DE 3533870A DE 3533870 A1 DE3533870 A1 DE 3533870A1
Authority
DE
Germany
Prior art keywords
bit lines
buses
signal
semiconductor memory
sense amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19853533870
Other languages
German (de)
English (en)
Other versions
DE3533870C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Katsumi Dosaka
Kazuyasu Fujishima
Hideto Hidaka
Masaki Kumanoya
Hideshi Miyatake
Tsutomu Itami Hyogo Yoshihara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3533870A1 publication Critical patent/DE3533870A1/de
Application granted granted Critical
Publication of DE3533870C2 publication Critical patent/DE3533870C2/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4096—Input/output [I/O] data management or control circuits, e.g. reading or writing circuits, I/O drivers or bit-line switches 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Databases & Information Systems (AREA)
  • Dram (AREA)
DE19853533870 1984-10-31 1985-09-23 Halbleiterspeichereinheit Granted DE3533870A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59231606A JPS61110394A (ja) 1984-10-31 1984-10-31 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE3533870A1 true DE3533870A1 (de) 1986-04-30
DE3533870C2 DE3533870C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-04-12

Family

ID=16926144

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853533870 Granted DE3533870A1 (de) 1984-10-31 1985-09-23 Halbleiterspeichereinheit

Country Status (3)

Country Link
US (1) US4722074A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS61110394A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3533870A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0261609A3 (en) * 1986-09-19 1990-07-11 Fujitsu Limited Semiconductor memory device having data bus reset circuits
EP0260983A3 (en) * 1986-09-18 1990-08-29 Fujitsu Limited Semiconductor memory device having shared bit lines
DE4036091A1 (de) * 1989-11-13 1991-05-16 Toshiba Kawasaki Kk Halbleiterspeicheranordnung mit einem in eine anzahl von zellenbloecken unterteilten zellenarray

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07107797B2 (ja) * 1987-02-10 1995-11-15 三菱電機株式会社 ダイナミツクランダムアクセスメモリ
JP2569538B2 (ja) * 1987-03-17 1997-01-08 ソニー株式会社 メモリ装置
JP2569554B2 (ja) * 1987-05-13 1997-01-08 三菱電機株式会社 ダイナミツクｒａｍ
JPS63304491A (ja) * 1987-06-04 1988-12-12 Mitsubishi Electric Corp 半導体メモリ
US4802129A (en) * 1987-12-03 1989-01-31 Motorola, Inc. RAM with dual precharge circuit and write recovery circuitry
US5034917A (en) * 1988-05-26 1991-07-23 Bland Patrick M Computer system including a page mode memory with decreased access time and method of operation thereof
KR910008101B1 (ko) * 1988-12-30 1991-10-07 삼성전자 주식회사 반도체 메모리 소자의 피드백형 데이타 출력 회로
JP2646032B2 (ja) * 1989-10-14 1997-08-25 三菱電機株式会社 Ｌｉｆｏ方式の半導体記憶装置およびその制御方法
KR940001644B1 (ko) * 1991-05-24 1994-02-28 삼성전자 주식회사 메모리 장치의 입출력 라인 프리차아지 방법
JPH05217367A (ja) * 1992-02-03 1993-08-27 Mitsubishi Electric Corp 半導体記憶装置
US6072746A (en) 1998-08-14 2000-06-06 International Business Machines Corporation Self-timed address decoder for register file and compare circuit of a multi-port CAM
KR100706779B1 (ko) * 2001-06-30 2007-04-11 주식회사 하이닉스반도체 노이즈의 영향을 적게받는 메모리 소자
US6714464B2 (en) * 2002-06-26 2004-03-30 Silicon Graphics, Inc. System and method for a self-calibrating sense-amplifier strobe
JP6106043B2 (ja) 2013-07-25 2017-03-29 ルネサスエレクトロニクス株式会社 半導体集積回路装置

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2634089B2 (de) * 1975-08-11 1978-01-05 Schaltungsanordnung zum erfassen schwacher signale
US4125878A (en) * 1976-07-12 1978-11-14 Nippon Electric Co., Ltd. Memory circuit
DE3313335A1 (de) * 1982-04-23 1983-11-03 Oki Electric Industry Co., Ltd., Tokyo Daten-mehrfachleitungs-vorladeschaltung
US4417329A (en) * 1980-07-29 1983-11-22 Fujitsu Limited Active pull-up circuit
US4447892A (en) * 1980-02-13 1984-05-08 Sharp Kabushiki Kaisha Pre-charge for the bit lines of a random access memory
DE3347306A1 (de) * 1982-12-28 1984-07-05 Tokyo Shibaura Denki K.K., Kawasaki Speichereinrichtung
US4475178A (en) * 1980-12-04 1984-10-02 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor regeneration/precharge device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53134337A (en) * 1977-03-25 1978-11-22 Hitachi Ltd Sense circuit
JPS57147194A (en) * 1981-03-05 1982-09-10 Fujitsu Ltd Address buffer
US4503522A (en) * 1981-03-17 1985-03-05 Hitachi, Ltd. Dynamic type semiconductor monolithic memory
JPS57195387A (en) * 1981-05-27 1982-12-01 Hitachi Ltd Data lien precharging system of memory integrated circuit
JPS5819793A (ja) * 1981-07-27 1983-02-04 Toshiba Corp 半導体メモリ装置
JPS58182190A (ja) * 1982-04-19 1983-10-25 Hitachi Ltd ダイナミツク型ｍｏｓメモリ装置
US4449207A (en) * 1982-04-29 1984-05-15 Intel Corporation Byte-wide dynamic RAM with multiplexed internal buses
JPS59203298A (ja) * 1983-05-04 1984-11-17 Nec Corp 半導体メモリ
JPS6085492A (ja) * 1983-10-17 1985-05-14 Hitachi Ltd ダイナミツクメモリ装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2634089B2 (de) * 1975-08-11 1978-01-05 Schaltungsanordnung zum erfassen schwacher signale
US4125878A (en) * 1976-07-12 1978-11-14 Nippon Electric Co., Ltd. Memory circuit
US4447892A (en) * 1980-02-13 1984-05-08 Sharp Kabushiki Kaisha Pre-charge for the bit lines of a random access memory
US4417329A (en) * 1980-07-29 1983-11-22 Fujitsu Limited Active pull-up circuit
US4475178A (en) * 1980-12-04 1984-10-02 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor regeneration/precharge device
DE3313335A1 (de) * 1982-04-23 1983-11-03 Oki Electric Industry Co., Ltd., Tokyo Daten-mehrfachleitungs-vorladeschaltung
DE3347306A1 (de) * 1982-12-28 1984-07-05 Tokyo Shibaura Denki K.K., Kawasaki Speichereinrichtung

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Masuda et al.: A 5V-Only 64 K Dynamic RAM Based on High SIN Design. In: IEEE Journal of Solid-State Circuits, Vol. SC-15, No. 5, October 1980, S. 846-854 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0260983A3 (en) * 1986-09-18 1990-08-29 Fujitsu Limited Semiconductor memory device having shared bit lines
EP0261609A3 (en) * 1986-09-19 1990-07-11 Fujitsu Limited Semiconductor memory device having data bus reset circuits
DE4036091A1 (de) * 1989-11-13 1991-05-16 Toshiba Kawasaki Kk Halbleiterspeicheranordnung mit einem in eine anzahl von zellenbloecken unterteilten zellenarray
US5734619A (en) * 1989-11-13 1998-03-31 Kabushiki Kaisha Toshiba Semiconductor memory device having cell array divided into a plurality of cell blocks
US5862090A (en) * 1989-11-13 1999-01-19 Kabushiki Kaisha Toshiba Semiconductor memory device having cell array divided into a plurality of cell blocks

Also Published As

Publication number Publication date
JPS61110394A (ja) 1986-05-28
US4722074A (en) 1988-01-26
DE3533870C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1990-04-12

Similar Documents

Publication Publication Date Title
DE3841944C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE3908723C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE4003824C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE69124291T2 (de) Halbleiterspeicher mit verbesserter Leseanordnung
DE69120448T2 (de) Halbleiterspeicheranordnungen von dynamischem Typus
DE3884859T2 (de) Dynamische Speicherschaltung mit einem Abfühlschema.
DE4214970C2 (de) Halbleiterspeichereinrichtung und Betriebsverfahren dafür
DE69227232T2 (de) Halbleiterspeicher und dessen Siebtestverfahren
DE3533870C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE3347306C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE3780621T2 (de) Dynamischer ram-speicher.
DE69027886T2 (de) Direktzugriffsspeicher vom dynamischen Typ
DE4140846A1 (de) Halbleiterspeichereinrichtung und betriebsverfahren hierfuer
DE3878712T2 (de) Halbleiterspeichervorrichtung mit einer abfuehlverstaerkeranordnung.
DE69119208T2 (de) Halbleiter-Speichereinrichtung mit Möglichkeit zum direkten Einlesen des Potentials von Bit-Lines
DE3534356A1 (de) Halbleiter-speichervorrichtung
DE102008049062A1 (de) Speicherzelle, Speicherbaustein, Baustein und Verfahren zum Zugreifen auf eine Speicherzelle
DE69120447T2 (de) Halbleiterspeicheranordnung von dynamischem Typus
DE4138340A1 (de) Halbleiterspeichervorrichtung vom geteilten leseverstaerkertyp
DE69115075T2 (de) CMOS-Vorladungs- und Ausgleichsschaltung.
DE3838961A1 (de) Vorrichtung und verfahren zum treiben eines leseverstaerkers in einem dynamischen speicher mit wahlfreiem zugriff
DE69112692T2 (de) Dynamische Direktzugriffspeicheranordnung mit verbesserter Speisespannung für eine beschleunigte Wiedereinschreibung von von Speicherzellen gelesenen Informationsbits.
DE69025284T2 (de) Halbleiterspeicher dynamischen Typs
DE10234123A1 (de) Halbleiterspeichervorrichtung mit Leseverstärker
DE3752067T2 (de) Sehr schnelles Datenabtasterverfahren und dynamische Halbleiterspeicheranordnung zur Realisierung dieses Verfahrens

Legal Events

Date Code Title Description
OM8 Search report available as to paragraph 43 lit. 1 sentence 1 patent law
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee