DE3464144D1 - Method of bonding crystalline silicon bodies - Google Patents
Method of bonding crystalline silicon bodiesInfo
- Publication number
- DE3464144D1 DE3464144D1 DE8484305653T DE3464144T DE3464144D1 DE 3464144 D1 DE3464144 D1 DE 3464144D1 DE 8484305653 T DE8484305653 T DE 8484305653T DE 3464144 T DE3464144 T DE 3464144T DE 3464144 D1 DE3464144 D1 DE 3464144D1
- Authority
- DE
- Germany
- Prior art keywords
- crystalline silicon
- silicon bodies
- bonding crystalline
- bonding
- bodies
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/24—Preliminary treatment
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/14—Housings
- G01L19/147—Details about the mounting of the sensor to support or covering means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Pressure Sensors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Recrystallisation Techniques (AREA)
- Ceramic Products (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Measuring Fluid Pressure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58159276A JPS6051700A (ja) | 1983-08-31 | 1983-08-31 | シリコン結晶体の接合方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3464144D1 true DE3464144D1 (en) | 1987-07-16 |
Family
ID=15690242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8484305653T Expired DE3464144D1 (en) | 1983-08-31 | 1984-08-20 | Method of bonding crystalline silicon bodies |
Country Status (4)
Country | Link |
---|---|
US (1) | US4671846A (de) |
EP (1) | EP0136050B1 (de) |
JP (1) | JPS6051700A (de) |
DE (1) | DE3464144D1 (de) |
Families Citing this family (86)
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---|---|---|---|---|
JPH0744280B2 (ja) * | 1983-12-06 | 1995-05-15 | 株式会社東芝 | シリコン結晶体の接合方法 |
EP0161740B1 (de) * | 1984-05-09 | 1991-06-12 | Kabushiki Kaisha Toshiba | Verfahren zur Herstellung eines Halbleitersubstrates |
JPH0770474B2 (ja) * | 1985-02-08 | 1995-07-31 | 株式会社東芝 | 化合物半導体装置の製造方法 |
JPH0770476B2 (ja) * | 1985-02-08 | 1995-07-31 | 株式会社東芝 | 半導体装置の製造方法 |
JPH0682833B2 (ja) * | 1985-02-08 | 1994-10-19 | 株式会社東芝 | サイリスタの製造方法 |
CA1251514A (en) * | 1985-02-20 | 1989-03-21 | Tadashi Sakai | Ion selective field effect transistor sensor |
NL8501773A (nl) * | 1985-06-20 | 1987-01-16 | Philips Nv | Werkwijze voor het vervaardigen van halfgeleiderinrichtingen. |
JPH07123136B2 (ja) * | 1985-07-25 | 1995-12-25 | 株式会社東芝 | 埋込誘電体層を有する半導体基板の製造方法 |
JPS62122148A (ja) * | 1985-11-21 | 1987-06-03 | Toshiba Corp | 半導体基板 |
JPS62154614A (ja) * | 1985-12-27 | 1987-07-09 | Toshiba Corp | 接合型半導体基板の製造方法 |
NL8600216A (nl) * | 1986-01-30 | 1987-08-17 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderinrichting. |
JPS62190757A (ja) * | 1986-02-18 | 1987-08-20 | Toshiba Corp | バイポ−ラトランジスタ |
US5297260A (en) * | 1986-03-12 | 1994-03-22 | Hitachi, Ltd. | Processor having a plurality of CPUS with one CPU being normally connected to common bus |
US6379998B1 (en) * | 1986-03-12 | 2002-04-30 | Hitachi, Ltd. | Semiconductor device and method for fabricating the same |
JPS62282933A (ja) * | 1986-06-02 | 1987-12-08 | 日本電信電話株式会社 | 精密部品の製造方法 |
JP2534673B2 (ja) * | 1986-07-04 | 1996-09-18 | 日本電気株式会社 | 誘電体分離基板の製造方法 |
JPH07123166B2 (ja) * | 1986-11-17 | 1995-12-25 | 日産自動車株式会社 | 電導度変調形mosfet |
JP2579979B2 (ja) * | 1987-02-26 | 1997-02-12 | 株式会社東芝 | 半導体素子の製造方法 |
JPS63254762A (ja) * | 1987-04-13 | 1988-10-21 | Nissan Motor Co Ltd | Cmos半導体装置 |
US5196375A (en) * | 1987-07-24 | 1993-03-23 | Kabushiki Kaisha Toshiba | Method for manufacturing bonded semiconductor body |
US5100709A (en) * | 1987-10-09 | 1992-03-31 | Tredegar Industries, Inc. | Multilayer film coating for rigid, smooth surfaces |
JP2788269B2 (ja) * | 1988-02-08 | 1998-08-20 | 株式会社東芝 | 半導体装置およびその製造方法 |
NL8800953A (nl) * | 1988-04-13 | 1989-11-01 | Philips Nv | Werkwijze voor het vervaardigen van een halfgeleiderlichaam. |
US5160560A (en) * | 1988-06-02 | 1992-11-03 | Hughes Aircraft Company | Method of producing optically flat surfaces on processed silicon wafers |
US5164813A (en) * | 1988-06-24 | 1992-11-17 | Unitrode Corporation | New diode structure |
JPH02124800A (ja) * | 1988-07-04 | 1990-05-14 | Hiroaki Aoshima | 一体同化した合成コランダムの単結晶構造体の製造方法 |
US6025060A (en) * | 1988-08-30 | 2000-02-15 | Onyx Optics, Inc. | Method and apparatus for composite gemstones |
US5846638A (en) * | 1988-08-30 | 1998-12-08 | Onyx Optics, Inc. | Composite optical and electro-optical devices |
US5563899A (en) * | 1988-08-30 | 1996-10-08 | Meissner; Helmuth E. | Composite solid state lasers of improved efficiency and beam quality |
US5852622A (en) * | 1988-08-30 | 1998-12-22 | Onyx Optics, Inc. | Solid state lasers with composite crystal or glass components |
US5441803A (en) * | 1988-08-30 | 1995-08-15 | Onyx Optics | Composites made from single crystal substances |
JP2685244B2 (ja) * | 1988-09-30 | 1997-12-03 | 株式会社日本自動車部品総合研究所 | 半導体装置の製造方法 |
JPH07101679B2 (ja) * | 1988-11-01 | 1995-11-01 | 三菱電機株式会社 | 電子デバイス用ウエハ,ウエハ用棒状基材および電子デバイス |
JPH0636407B2 (ja) * | 1988-11-05 | 1994-05-11 | 信越半導体株式会社 | 半導体ウエーハ接合方法 |
US5416354A (en) * | 1989-01-06 | 1995-05-16 | Unitrode Corporation | Inverted epitaxial process semiconductor devices |
US5004705A (en) * | 1989-01-06 | 1991-04-02 | Unitrode Corporation | Inverted epitaxial process |
US4996627A (en) * | 1989-01-30 | 1991-02-26 | Dresser Industries, Inc. | High sensitivity miniature pressure transducer |
US5201977A (en) * | 1989-08-09 | 1993-04-13 | Hiroaki Aoshima | Process for producing structures from synthetic single-crystal pieces |
DE59003592D1 (de) * | 1989-09-29 | 1994-01-05 | Siemens Ag | Verfahren zur Herstellung eines Körpers aus Silizium. |
DE69114531T2 (de) * | 1990-02-07 | 1996-04-25 | Harris Corp | Löten von Wafern unter Verwendung von eingeschlossenem oxydierendem Dampf. |
JPH0719737B2 (ja) * | 1990-02-28 | 1995-03-06 | 信越半導体株式会社 | S01基板の製造方法 |
DE4009090A1 (de) * | 1990-03-21 | 1991-09-26 | Bosch Gmbh Robert | Verfahren zur herstellung von mehrschichtigen siliziumstrukturen |
JPH0636413B2 (ja) * | 1990-03-29 | 1994-05-11 | 信越半導体株式会社 | 半導体素子形成用基板の製造方法 |
JP2581268B2 (ja) * | 1990-05-22 | 1997-02-12 | 日本電気株式会社 | 半導体基板の処理方法 |
US5131968A (en) * | 1990-07-31 | 1992-07-21 | Motorola, Inc. | Gradient chuck method for wafer bonding employing a convex pressure |
USRE36890E (en) * | 1990-07-31 | 2000-10-03 | Motorola, Inc. | Gradient chuck method for wafer bonding employing a convex pressure |
JP2566340B2 (ja) * | 1990-11-19 | 1996-12-25 | 東芝セラミックス株式会社 | シリコン製ウエハ支持ボートの製造方法 |
US5693574A (en) * | 1991-02-22 | 1997-12-02 | Deutsche Aerospace Ag | Process for the laminar joining of silicon semiconductor slices |
JP2812405B2 (ja) * | 1991-03-15 | 1998-10-22 | 信越半導体株式会社 | 半導体基板の製造方法 |
DE4115046A1 (de) * | 1991-05-08 | 1992-11-12 | Fraunhofer Ges Forschung | Direktes substratbonden |
EP0526889B1 (de) * | 1991-08-06 | 1997-05-07 | Nec Corporation | Verfahren zum Aufbringen einer Metall- oder Passivierenschicht mit hoher Haftung über einem isolierten Halbleitersubstrat |
US5451547A (en) * | 1991-08-26 | 1995-09-19 | Nippondenso Co., Ltd. | Method of manufacturing semiconductor substrate |
JPH05152263A (ja) * | 1991-11-25 | 1993-06-18 | Mitsubishi Materials Corp | 両面研磨機によるシリコンウエーハの片面研磨方法 |
JP2581486B2 (ja) * | 1992-04-27 | 1997-02-12 | 松下電器産業株式会社 | 光導波路素子およびその製造方法 |
JP2574594B2 (ja) * | 1992-05-26 | 1997-01-22 | 松下電器産業株式会社 | 光導波路素子とその製造方法 |
JP2574606B2 (ja) * | 1992-09-01 | 1997-01-22 | 松下電器産業株式会社 | 誘電体光導波路素子およびその製造方法 |
JP2574602B2 (ja) * | 1992-07-08 | 1997-01-22 | 松下電器産業株式会社 | 光導波路素子 |
JP3192000B2 (ja) * | 1992-08-25 | 2001-07-23 | キヤノン株式会社 | 半導体基板及びその作製方法 |
JP2592752B2 (ja) * | 1992-10-05 | 1997-03-19 | 松下電器産業株式会社 | 半導体光導波路素子とその製造方法 |
JP2701709B2 (ja) * | 1993-02-16 | 1998-01-21 | 株式会社デンソー | 2つの材料の直接接合方法及び材料直接接合装置 |
US5647932A (en) * | 1993-05-18 | 1997-07-15 | Matsushita Electric Industrial Co., Ltd. | Method of processing a piezoelectric device |
US5441591A (en) * | 1993-06-07 | 1995-08-15 | The United States Of America As Represented By The Secretary Of The Navy | Silicon to sapphire bond |
JP2856030B2 (ja) * | 1993-06-29 | 1999-02-10 | 信越半導体株式会社 | 結合ウエーハの製造方法 |
DE4415984A1 (de) * | 1994-05-06 | 1995-11-09 | Bosch Gmbh Robert | Halbleitersensor mit Schutzschicht |
US5597443A (en) * | 1994-08-31 | 1997-01-28 | Texas Instruments Incorporated | Method and system for chemical mechanical polishing of semiconductor wafer |
WO1996013060A1 (de) * | 1994-10-24 | 1996-05-02 | Daimler-Benz Aktiengesellschaft | Verfahren zum direkten verbinden von planaren körpern und nach dem verfahren aus planaren körpern hergestellte gegenstände |
US6484585B1 (en) | 1995-02-28 | 2002-11-26 | Rosemount Inc. | Pressure sensor for a pressure transmitter |
US5932048A (en) * | 1995-04-06 | 1999-08-03 | Komatsu Electronic Metals Co., Ltd. | Method of fabricating direct-bonded semiconductor wafers |
TW308707B (en) * | 1995-12-15 | 1997-06-21 | Komatsu Denshi Kinzoku Kk | Manufacturing method of bonding SOI wafer |
US5936984A (en) * | 1997-05-21 | 1999-08-10 | Onxy Optics, Inc. | Laser rods with undoped, flanged end-caps for end-pumped laser applications |
JP4144047B2 (ja) * | 1997-08-20 | 2008-09-03 | 株式会社デンソー | 半導体基板の製造方法 |
KR100304197B1 (ko) * | 1998-03-30 | 2001-11-30 | 윤종용 | 소이제조방법 |
US6160824A (en) * | 1998-11-02 | 2000-12-12 | Maxios Laser Corporation | Laser-pumped compound waveguide lasers and amplifiers |
JP2001080974A (ja) * | 1999-09-08 | 2001-03-27 | Fuji Photo Film Co Ltd | 複合基板材料およびその製造方法 |
US6520020B1 (en) | 2000-01-06 | 2003-02-18 | Rosemount Inc. | Method and apparatus for a direct bonded isolated pressure sensor |
US6561038B2 (en) | 2000-01-06 | 2003-05-13 | Rosemount Inc. | Sensor with fluid isolation barrier |
US6505516B1 (en) | 2000-01-06 | 2003-01-14 | Rosemount Inc. | Capacitive pressure sensing with moving dielectric |
US6508129B1 (en) | 2000-01-06 | 2003-01-21 | Rosemount Inc. | Pressure sensor capsule with improved isolation |
US6516671B2 (en) | 2000-01-06 | 2003-02-11 | Rosemount Inc. | Grain growth of electrical interconnection for microelectromechanical systems (MEMS) |
JP3957038B2 (ja) * | 2000-11-28 | 2007-08-08 | シャープ株式会社 | 半導体基板及びその作製方法 |
FR2848337B1 (fr) * | 2002-12-09 | 2005-09-09 | Commissariat Energie Atomique | Procede de realisation d'une structure complexe par assemblage de structures contraintes |
JP4476764B2 (ja) * | 2004-03-26 | 2010-06-09 | 富士フイルム株式会社 | 基板接合装置及び方法 |
DE102004038727A1 (de) * | 2004-08-10 | 2006-02-23 | Schott Ag | Verfahren und Vorrichtung zum Herstellen von Hybridlinsen |
EP3885042A1 (de) * | 2020-03-24 | 2021-09-29 | Imec VZW | Verfahren zur herstellung einer mikrofluidischen vorrichtung |
CN111411400A (zh) * | 2020-04-17 | 2020-07-14 | 中国电子科技南湖研究院 | 一种高纯半导体单晶的热等静压连接方法 |
CN111785614B (zh) * | 2020-06-18 | 2022-04-12 | 上海空间电源研究所 | 一种降低电压损耗的键合结构及其制备方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL122607C (de) * | 1961-07-26 | 1900-01-01 | ||
GB1138401A (en) * | 1965-05-06 | 1969-01-01 | Mallory & Co Inc P R | Bonding |
JPS4926455A (de) * | 1972-07-11 | 1974-03-08 | ||
JPS5013155A (de) * | 1973-06-06 | 1975-02-12 | ||
US4121334A (en) * | 1974-12-17 | 1978-10-24 | P. R. Mallory & Co. Inc. | Application of field-assisted bonding to the mass production of silicon type pressure transducers |
JPS5451488A (en) * | 1977-09-30 | 1979-04-23 | Toshiba Corp | Manufacture for semiconductor pressure converter |
US4463336A (en) * | 1981-12-28 | 1984-07-31 | United Technologies Corporation | Ultra-thin microelectronic pressure sensors |
US4501060A (en) * | 1983-01-24 | 1985-02-26 | At&T Bell Laboratories | Dielectrically isolated semiconductor devices |
-
1983
- 1983-08-31 JP JP58159276A patent/JPS6051700A/ja active Granted
-
1984
- 1984-08-16 US US06/641,207 patent/US4671846A/en not_active Expired - Lifetime
- 1984-08-20 EP EP84305653A patent/EP0136050B1/de not_active Expired
- 1984-08-20 DE DE8484305653T patent/DE3464144D1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
JPS6227040B2 (de) | 1987-06-11 |
EP0136050B1 (de) | 1987-06-10 |
US4671846A (en) | 1987-06-09 |
EP0136050A1 (de) | 1985-04-03 |
JPS6051700A (ja) | 1985-03-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) |