JPS5013155A - - Google Patents

Info

Publication number
JPS5013155A
JPS5013155A JP6367173A JP6367173A JPS5013155A JP S5013155 A JPS5013155 A JP S5013155A JP 6367173 A JP6367173 A JP 6367173A JP 6367173 A JP6367173 A JP 6367173A JP S5013155 A JPS5013155 A JP S5013155A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6367173A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP6367173A priority Critical patent/JPS5013155A/ja
Publication of JPS5013155A publication Critical patent/JPS5013155A/ja
Pending legal-status Critical Current

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  • Assembled Shelves (AREA)
JP6367173A 1973-06-06 1973-06-06 Pending JPS5013155A (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6367173A JPS5013155A (de) 1973-06-06 1973-06-06

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6367173A JPS5013155A (de) 1973-06-06 1973-06-06

Publications (1)

Publication Number Publication Date
JPS5013155A true JPS5013155A (de) 1975-02-12

Family

ID=13236035

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6367173A Pending JPS5013155A (de) 1973-06-06 1973-06-06

Country Status (1)

Country Link
JP (1) JPS5013155A (de)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60106165A (ja) * 1983-11-15 1985-06-11 Fujitsu Ltd 半導体装置の製造方法
JPS60121777A (ja) * 1983-12-06 1985-06-29 Toshiba Corp シリコン結晶体の接合方法
JPS61164238A (ja) * 1985-01-17 1986-07-24 Toshiba Corp 複合半導体装置およびその製造方法
JPS61183940A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 半導体装置の製造方法
US4671846A (en) * 1983-08-31 1987-06-09 Kabushiki Kaisha Toshiba Method of bonding crystalline silicon bodies
JPS62260357A (ja) * 1986-05-07 1987-11-12 Seiko Epson Corp Ｓｏｉ基板及びその製造方法
JPS6337652A (ja) * 1986-07-31 1988-02-18 Sumitomo Metal Mining Co Ltd 半導体デバイス用基板の接着方法
JPH01109494U (de) * 1988-01-19 1989-07-24
JPH03250617A (ja) * 1990-02-28 1991-11-08 Shin Etsu Handotai Co Ltd 接合ウエーハの製造方法
US5087307A (en) * 1985-12-27 1992-02-11 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor substrate
US5258092A (en) * 1991-03-22 1993-11-02 Shin-Etsu Handotai Co., Ltd. Method of growing silicon monocrystalline rod
US5266824A (en) * 1991-03-15 1993-11-30 Shin-Etsu Handotai Co., Ltd. SOI semiconductor substrate
JPH07169659A (ja) * 1994-10-25 1995-07-04 Toshiba Corp 半導体ウエハの接合方法
JPH08330554A (ja) * 1995-03-13 1996-12-13 Nec Corp 半導体基板及びその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS43694Y1 (de) * 1964-06-23 1968-01-16

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS43694Y1 (de) * 1964-06-23 1968-01-16

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4671846A (en) * 1983-08-31 1987-06-09 Kabushiki Kaisha Toshiba Method of bonding crystalline silicon bodies
JPS60106165A (ja) * 1983-11-15 1985-06-11 Fujitsu Ltd 半導体装置の製造方法
JPS60121777A (ja) * 1983-12-06 1985-06-29 Toshiba Corp シリコン結晶体の接合方法
JPS61164238A (ja) * 1985-01-17 1986-07-24 Toshiba Corp 複合半導体装置およびその製造方法
JPS61183940A (ja) * 1985-02-08 1986-08-16 Toshiba Corp 半導体装置の製造方法
US5087307A (en) * 1985-12-27 1992-02-11 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor substrate
JPS62260357A (ja) * 1986-05-07 1987-11-12 Seiko Epson Corp Ｓｏｉ基板及びその製造方法
JPH07120757B2 (ja) * 1986-05-07 1995-12-20 セイコーエプソン株式会社 Ｓｏｉ基板及びその製造方法
JPS6337652A (ja) * 1986-07-31 1988-02-18 Sumitomo Metal Mining Co Ltd 半導体デバイス用基板の接着方法
JPH01109494U (de) * 1988-01-19 1989-07-24
JPH03250617A (ja) * 1990-02-28 1991-11-08 Shin Etsu Handotai Co Ltd 接合ウエーハの製造方法
US5266824A (en) * 1991-03-15 1993-11-30 Shin-Etsu Handotai Co., Ltd. SOI semiconductor substrate
US5258092A (en) * 1991-03-22 1993-11-02 Shin-Etsu Handotai Co., Ltd. Method of growing silicon monocrystalline rod
JPH07169659A (ja) * 1994-10-25 1995-07-04 Toshiba Corp 半導体ウエハの接合方法
JPH08330554A (ja) * 1995-03-13 1996-12-13 Nec Corp 半導体基板及びその製造方法

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