GB2144266B - Method of manufacture for ultra-miniature thin-film diodes - Google Patents
Method of manufacture for ultra-miniature thin-film diodesInfo
- Publication number
- GB2144266B GB2144266B GB08416632A GB8416632A GB2144266B GB 2144266 B GB2144266 B GB 2144266B GB 08416632 A GB08416632 A GB 08416632A GB 8416632 A GB8416632 A GB 8416632A GB 2144266 B GB2144266 B GB 2144266B
- Authority
- GB
- United Kingdom
- Prior art keywords
- ultra
- manufacture
- film diodes
- miniature thin
- miniature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1365—Active matrix addressed cells in which the switching element is a two-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Liquid Crystal (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58117488A JPH0652794B2 (en) | 1983-06-29 | 1983-06-29 | Method of manufacturing thin film diode |
JP58122205A JPS6014468A (en) | 1983-07-05 | 1983-07-05 | Thin film diode |
JP58136162A JPS6028276A (en) | 1983-07-26 | 1983-07-26 | Manufacture of thin film diode |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8416632D0 GB8416632D0 (en) | 1984-08-01 |
GB2144266A GB2144266A (en) | 1985-02-27 |
GB2144266B true GB2144266B (en) | 1987-03-18 |
Family
ID=27313386
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08416632A Expired GB2144266B (en) | 1983-06-29 | 1984-06-29 | Method of manufacture for ultra-miniature thin-film diodes |
Country Status (3)
Country | Link |
---|---|
DE (1) | DE3424085A1 (en) |
FR (1) | FR2548450B1 (en) |
GB (1) | GB2144266B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2579775B1 (en) * | 1985-04-02 | 1987-05-15 | Thomson Csf | METHOD FOR PRODUCING NON-LINEAR CONTROL ELEMENTS FOR FLAT SCREEN FOR ELECTRO-OPTICAL VISUALIZATION AND FLAT SCREEN PERFORMED ACCORDING TO THIS METHOD |
FR2579809B1 (en) * | 1985-04-02 | 1987-05-15 | Thomson Csf | METHOD FOR PRODUCING DIE-CONTROLLED DIES FOR ELECTRO-OPTICAL DISPLAY FLAT SCREEN AND FLAT SCREEN PRODUCED BY THIS PROCESS |
FR2581781B1 (en) * | 1985-05-07 | 1987-06-12 | Thomson Csf | NON-LINEAR CONTROL ELEMENTS FOR FLAT ELECTROOPTIC DISPLAY SCREEN AND MANUFACTURING METHOD THEREOF |
NL8702490A (en) * | 1987-10-19 | 1989-05-16 | Philips Nv | DISPLAY WITH LATERAL SCHOTTKY DIODS. |
NL8802409A (en) * | 1988-09-30 | 1990-04-17 | Philips Nv | DISPLAY DEVICE, SUPPORT PLATE PROVIDED WITH DIODE AND SUITABLE FOR THE DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SUPPORT PLATE. |
FR2714765B1 (en) * | 1993-12-30 | 1996-02-02 | France Telecom | Method of making an electrical connection between two conductive layers. |
DE4410799C2 (en) * | 1994-03-29 | 1996-02-08 | Forschungszentrum Juelich Gmbh | diode |
GB2304993B (en) * | 1995-08-23 | 1997-08-06 | Toshiba Cambridge Res Center | Semiconductor device |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4174217A (en) * | 1974-08-02 | 1979-11-13 | Rca Corporation | Method for making semiconductor structure |
US4425379A (en) * | 1981-02-11 | 1984-01-10 | Fairchild Camera & Instrument Corporation | Polycrystalline silicon Schottky diode array |
EP0071244B1 (en) * | 1981-07-27 | 1988-11-23 | Kabushiki Kaisha Toshiba | Thin-film transistor and method of manufacture therefor |
US4642620A (en) * | 1982-09-27 | 1987-02-10 | Citizen Watch Company Limited | Matrix display device |
-
1984
- 1984-06-29 DE DE19843424085 patent/DE3424085A1/en active Granted
- 1984-06-29 FR FR8410296A patent/FR2548450B1/en not_active Expired
- 1984-06-29 GB GB08416632A patent/GB2144266B/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2548450A1 (en) | 1985-01-04 |
GB8416632D0 (en) | 1984-08-01 |
FR2548450B1 (en) | 1987-04-30 |
GB2144266A (en) | 1985-02-27 |
DE3424085C2 (en) | 1989-05-03 |
DE3424085A1 (en) | 1985-01-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE3480243D1 (en) | Method of manufacturing thin-film integrated devices | |
EG16216A (en) | Method for production of puire silicon | |
PL249852A1 (en) | Method of obtaining novel aminomethylpyrrolidinones | |
GR82597B (en) | Method of preparing novel 2-phenyl-imidazol | |
DE3476958D1 (en) | Method of mounting elements | |
CS987784A2 (en) | Method of phwnolsulphonphaleinyl-beta-d-galactosides production | |
PL254899A1 (en) | Method of obtaining indolo-dihydroindole alkaloides | |
PL250633A2 (en) | Method of obtaining novel derivatives 4-piperidinoamine | |
PL249025A1 (en) | Method of obtaining novel derivatives of piperidinoquinazoline | |
GB2144266B (en) | Method of manufacture for ultra-miniature thin-film diodes | |
PL251146A1 (en) | Method of obtaining difluoropyridines | |
BG50101A1 (en) | Method for preparing of adhesives | |
GB2145638B (en) | Method of producing crystals | |
PL253669A1 (en) | Method of obtaining novel/piperazinylo-1/-acetamide | |
GB2142933B (en) | Method of culture | |
SU1137775A1 (en) | Method of obtaining seignette-electric film | |
SU1151239A1 (en) | Method of manufacturing individual impression tray | |
PL255442A1 (en) | Method of obtaining novel 2-thiocyanate-benzamides | |
PL248730A1 (en) | Method of obtaining novel derivatives of 9-antriloxaminoalkanes | |
BG47089A1 (en) | Method for manufacture of gloves | |
BG46971A1 (en) | Method for manufacture of adhesives | |
PL135717B2 (en) | Method of manufacture of thin-film capacitors | |
PL243886A2 (en) | Method of manufacture of copolyamides | |
PL242339A1 (en) | Method of manufacture of derivatives of diphenylmethane | |
SU1151534A1 (en) | Method of obtaining acylcyclododecanes |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19950629 |