JPS5451488A - Manufacture for semiconductor pressure converter - Google Patents

Manufacture for semiconductor pressure converter

Info

Publication number
JPS5451488A
JPS5451488A JP11753777A JP11753777A JPS5451488A JP S5451488 A JPS5451488 A JP S5451488A JP 11753777 A JP11753777 A JP 11753777A JP 11753777 A JP11753777 A JP 11753777A JP S5451488 A JPS5451488 A JP S5451488A
Authority
JP
Japan
Prior art keywords
substrate
fixed base
glass
bonding layer
manufacture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11753777A
Other languages
Japanese (ja)
Inventor
Shunji Shiromizu
Susumu Kimijima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP11753777A priority Critical patent/JPS5451488A/en
Publication of JPS5451488A publication Critical patent/JPS5451488A/en
Pending legal-status Critical Current

Links

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)

Abstract

PURPOSE: To obtain extremely high bonding property, by performing pressure with a given temperature after forming the bonding layer on the respective surfaces in advance opposing each other, when the pressure conversion substrate on the fixed base.
CONSTITUTION: Glass powder layer is coated on the surface opposed with the pressure conversion subtstrated 10 and the base fixed 7 with glass deposition method, forming the solder glass layers 111 and 112 by heating them respectively at about 550°C. Next, these surfaces are overlaid and are heated and bonded at the glass melting temperature of about 550°C again by placeing a weight 12, unifying the substrate 10 and the fixed base 7. Thus, the boundary between the substrate 10 and the bonding layer 11 and the fixed base 7 and the bonding layer 11 causes no voids and extremely high bonding property can be obtained surface-physically
COPYRIGHT: (C)1979,JPO&Japio
JP11753777A 1977-09-30 1977-09-30 Manufacture for semiconductor pressure converter Pending JPS5451488A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11753777A JPS5451488A (en) 1977-09-30 1977-09-30 Manufacture for semiconductor pressure converter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11753777A JPS5451488A (en) 1977-09-30 1977-09-30 Manufacture for semiconductor pressure converter

Publications (1)

Publication Number Publication Date
JPS5451488A true JPS5451488A (en) 1979-04-23

Family

ID=14714244

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11753777A Pending JPS5451488A (en) 1977-09-30 1977-09-30 Manufacture for semiconductor pressure converter

Country Status (1)

Country Link
JP (1) JPS5451488A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4671846A (en) * 1983-08-31 1987-06-09 Kabushiki Kaisha Toshiba Method of bonding crystalline silicon bodies

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4671846A (en) * 1983-08-31 1987-06-09 Kabushiki Kaisha Toshiba Method of bonding crystalline silicon bodies

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