DE3381545D1 - Halbleiterspeicheranordnung. - Google Patents

Halbleiterspeicheranordnung.

Info

Publication number
DE3381545D1
DE3381545D1 DE8383105445T DE3381545T DE3381545D1 DE 3381545 D1 DE3381545 D1 DE 3381545D1 DE 8383105445 T DE8383105445 T DE 8383105445T DE 3381545 T DE3381545 T DE 3381545T DE 3381545 D1 DE3381545 D1 DE 3381545D1
Authority
DE
Germany
Prior art keywords
semiconductor memory
memory arrangement
arrangement
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8383105445T
Other languages
German (de)
English (en)
Inventor
Kenji C O Mitsubishi Den Anami
Masahiko C O Mitsubi Yoshimoto
Hirofumi C O Mitsubi Shinohara
Osamu C O Mitsubishi Tomisawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Application granted granted Critical
Publication of DE3381545D1 publication Critical patent/DE3381545D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
DE8383105445T 1982-06-02 1983-06-01 Halbleiterspeicheranordnung. Expired - Lifetime DE3381545D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57095932A JPS58211393A (ja) 1982-06-02 1982-06-02 半導体メモリ装置

Publications (1)

Publication Number Publication Date
DE3381545D1 true DE3381545D1 (de) 1990-06-13

Family

ID=14151041

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383105445T Expired - Lifetime DE3381545D1 (de) 1982-06-02 1983-06-01 Halbleiterspeicheranordnung.

Country Status (4)

Country Link
US (2) US4542486A (US20090163788A1-20090625-C00002.png)
EP (1) EP0096359B1 (US20090163788A1-20090625-C00002.png)
JP (1) JPS58211393A (US20090163788A1-20090625-C00002.png)
DE (1) DE3381545D1 (US20090163788A1-20090625-C00002.png)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58212696A (ja) * 1982-06-03 1983-12-10 Mitsubishi Electric Corp 半導体メモリ装置
JPS593785A (ja) * 1982-06-30 1984-01-10 Fujitsu Ltd 半導体メモリ
JPS5930294A (ja) * 1982-08-11 1984-02-17 Toshiba Corp 半導体記憶装置
DE3380678D1 (en) * 1983-05-25 1989-11-09 Ibm Deutschland Semiconductor memory
US5184202A (en) * 1983-07-27 1993-02-02 Hitachi, Ltd. Semiconductor integrated circuit device
JPH073862B2 (ja) * 1983-07-27 1995-01-18 株式会社日立製作所 半導体記憶装置
JPS60138796A (ja) * 1983-12-27 1985-07-23 Toshiba Corp 半導体装置
JPS60231996A (ja) * 1984-04-28 1985-11-18 Mitsubishi Electric Corp 半導体記憶装置
JPS61126689A (ja) * 1984-11-21 1986-06-14 Fujitsu Ltd 半導体記憶装置
US4760562A (en) * 1984-12-04 1988-07-26 Kabushiki Kaisha Toshiba MOS static memory circuit
NL8500434A (nl) * 1985-02-15 1986-09-01 Philips Nv Geintegreerde geheugenschakeling met blokselektie.
JPS61289593A (ja) * 1985-06-14 1986-12-19 Sanyo Electric Co Ltd 半導体メモリ
US4698788A (en) * 1985-07-01 1987-10-06 Motorola, Inc. Memory architecture with sub-arrays
JPH0740602B2 (ja) * 1985-09-25 1995-05-01 セイコーエプソン株式会社 半導体記憶装置
JPH081754B2 (ja) * 1986-06-10 1996-01-10 日本電気株式会社 メモリ回路
JPS62149096A (ja) * 1986-12-12 1987-07-03 Mitsubishi Electric Corp 半導体メモリ装置
US4935901A (en) * 1987-02-23 1990-06-19 Hitachi, Ltd. Semiconductor memory with divided bit load and data bus lines
US5172335A (en) * 1987-02-23 1992-12-15 Hitachi, Ltd. Semiconductor memory with divided bit load and data bus lines
JPH0779248B2 (ja) * 1987-03-17 1995-08-23 松下電器産業株式会社 デコーダ用組み合わせ論理回路
JP2629697B2 (ja) * 1987-03-27 1997-07-09 日本電気株式会社 半導体記憶装置
US4845677A (en) * 1987-08-17 1989-07-04 International Business Machines Corporation Pipelined memory chip structure having improved cycle time
JPH01182993A (ja) * 1988-01-14 1989-07-20 Seiko Epson Corp 半導体記憶装置
KR100213602B1 (ko) * 1988-05-13 1999-08-02 가나이 쓰도무 다이나믹형 반도체 기억장치
JP2776835B2 (ja) * 1988-07-08 1998-07-16 株式会社日立製作所 欠陥救済用の冗長回路を有する半導体メモリ
JPH0766666B2 (ja) * 1988-08-29 1995-07-19 三菱電機株式会社 半導体記憶装置
JPH0287393A (ja) * 1988-09-21 1990-03-28 Fujitsu Ltd 半導体記憶装置
JPH02141993A (ja) * 1988-11-21 1990-05-31 Toshiba Corp 半導体記憶装置
JP3103575B2 (ja) * 1989-05-26 2000-10-30 松下電器産業株式会社 半導体記憶装置
JPH07114077B2 (ja) * 1989-06-01 1995-12-06 三菱電機株式会社 不揮発性半導体記憶装置
JP2982905B2 (ja) * 1989-10-02 1999-11-29 三菱電機株式会社 ダイナミック型半導体記憶装置
JP2997486B2 (ja) * 1989-12-01 2000-01-11 三菱電機株式会社 半導体記憶回路装置
JP2875321B2 (ja) * 1990-01-29 1999-03-31 沖電気工業株式会社 半導体記憶装置
JPH03235290A (ja) * 1990-02-09 1991-10-21 Mitsubishi Electric Corp 階層的な行選択線を有する半導体記憶装置
US5301155A (en) * 1990-03-20 1994-04-05 Mitsubishi Denki Kabushiki Kaisha Multiblock semiconduction storage device including simultaneous operation of a plurality of block defect determination circuits
JP2982920B2 (ja) * 1990-07-10 1999-11-29 三菱電機株式会社 半導体記憶装置
US5226134A (en) * 1990-10-01 1993-07-06 International Business Machines Corp. Data processing system including a memory controller for direct or interleave memory accessing
US5222039A (en) * 1990-11-28 1993-06-22 Thunderbird Technologies, Inc. Static random access memory (SRAM) including Fermi-threshold field effect transistors
JP3299285B2 (ja) * 1991-04-23 2002-07-08 株式会社日立製作所 半導体記憶装置
JP3781793B2 (ja) * 1995-01-10 2006-05-31 株式会社ルネサステクノロジ ダイナミック型半導体記憶装置
JPH0955482A (ja) 1995-06-08 1997-02-25 Mitsubishi Electric Corp 半導体記憶装置
US6023441A (en) * 1995-08-30 2000-02-08 Intel Corporation Method and apparatus for selectively enabling individual sets of registers in a row of a register array
KR0167296B1 (ko) * 1995-12-16 1999-02-01 문정환 메모리의 워드라인 구동회로
KR100246311B1 (ko) * 1996-09-17 2000-03-15 김영환 반도체 메모리소자
US5933387A (en) * 1998-03-30 1999-08-03 Richard Mann Divided word line architecture for embedded memories using multiple metal layers
JP4818519B2 (ja) * 2001-02-06 2011-11-16 ルネサスエレクトロニクス株式会社 磁気記憶装置
JP4849249B2 (ja) * 2004-12-16 2012-01-11 日本電気株式会社 半導体記憶装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4056811A (en) * 1976-02-13 1977-11-01 Baker Roger T Circuit for the improvement of semiconductor memories
JPS52142442A (en) * 1976-05-21 1977-11-28 Nec Corp Memory circuit
US4222112A (en) * 1979-02-09 1980-09-09 Bell Telephone Laboratories, Incorporated Dynamic RAM organization for reducing peak current
JPS56101687A (en) * 1979-12-27 1981-08-14 Fujitsu Ltd Semiconductor memory circuit
JPS5694576A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Word decoder circuit
JPS57114597U (US20090163788A1-20090625-C00002.png) * 1981-01-08 1982-07-15
US4488266A (en) * 1982-09-29 1984-12-11 Rockwell International Corporation Low-power address decoder

Also Published As

Publication number Publication date
JPS6228516B2 (US20090163788A1-20090625-C00002.png) 1987-06-20
EP0096359A2 (en) 1983-12-21
US4542486A (en) 1985-09-17
JPS58211393A (ja) 1983-12-08
EP0096359B1 (en) 1990-05-09
USRE32993E (en) 1989-07-18
EP0096359A3 (en) 1987-01-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)