JPS5694576A - Word decoder circuit - Google Patents
Word decoder circuitInfo
- Publication number
- JPS5694576A JPS5694576A JP17194979A JP17194979A JPS5694576A JP S5694576 A JPS5694576 A JP S5694576A JP 17194979 A JP17194979 A JP 17194979A JP 17194979 A JP17194979 A JP 17194979A JP S5694576 A JPS5694576 A JP S5694576A
- Authority
- JP
- Japan
- Prior art keywords
- word line
- decoder
- word
- selecting
- line drive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/418—Address circuits
Abstract
PURPOSE:To halve the number of memories connected to the word line and to save the power consumption, by providing a common control decoder to the decoder group selecting the word line so that a pair of word line drive sections can alternately be operated. CONSTITUTION:Between memory cell groups divided into two of static type RAM, a word decoder WD is located so that the word line selection gate NOR receives the signals A1-An-1 selecting the word lines WL1, WL2 in the memory group of the row address inputs A1-An. Further, the word line drive section consisting of transistors Q31, Q33, Q1, Q35 and transistors Q32, Q34, Q2, Q36 is provided at both sides of the decoder WD, which is connected respectively to the word lines WL1, WL2. Further, to the common control decoder CD, the most significant bit An selecting either of left or right of the memory cell groups is input to select one of the word line drive sections of the decoder WD. Thus, the number of memories in connection with the word line is halved to reduce the power consumption.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17194979A JPS5694576A (en) | 1979-12-28 | 1979-12-28 | Word decoder circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17194979A JPS5694576A (en) | 1979-12-28 | 1979-12-28 | Word decoder circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5694576A true JPS5694576A (en) | 1981-07-31 |
Family
ID=15932774
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17194979A Pending JPS5694576A (en) | 1979-12-28 | 1979-12-28 | Word decoder circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5694576A (en) |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58211393A (en) * | 1982-06-02 | 1983-12-08 | Mitsubishi Electric Corp | Semiconductor memory device |
JPS58212696A (en) * | 1982-06-03 | 1983-12-10 | Mitsubishi Electric Corp | Semiconductor memory device |
JPS593785A (en) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | Semiconductor memory |
JPS5930294A (en) * | 1982-08-11 | 1984-02-17 | Toshiba Corp | Semiconductor storage device |
JPS59151399A (en) * | 1983-02-17 | 1984-08-29 | Mitsubishi Electric Corp | Semiconductor storage device |
JPS6040596A (en) * | 1983-07-14 | 1985-03-02 | ハネウエル・インコ−ポレ−テツド | Electronic device |
JPS60167188A (en) * | 1984-12-24 | 1985-08-30 | Hitachi Ltd | Semiconductor memory |
JPS62149097A (en) * | 1986-12-12 | 1987-07-03 | Mitsubishi Electric Corp | Semiconductor memory device |
JPS62149096A (en) * | 1986-12-12 | 1987-07-03 | Mitsubishi Electric Corp | Semiconductor memory device |
JPS62149095A (en) * | 1986-12-12 | 1987-07-03 | Mitsubishi Electric Corp | Semiconductor memory device |
JPS62183095A (en) * | 1986-12-24 | 1987-08-11 | Mitsubishi Electric Corp | Semiconductor memory device |
JPS62183094A (en) * | 1986-12-24 | 1987-08-11 | Mitsubishi Electric Corp | Semiconductor memory device |
JPH0696580A (en) * | 1992-11-30 | 1994-04-08 | Toshiba Corp | Semiconductor memory |
-
1979
- 1979-12-28 JP JP17194979A patent/JPS5694576A/en active Pending
Cited By (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58211393A (en) * | 1982-06-02 | 1983-12-08 | Mitsubishi Electric Corp | Semiconductor memory device |
JPS6228516B2 (en) * | 1982-06-02 | 1987-06-20 | Mitsubishi Electric Corp | |
JPS58212696A (en) * | 1982-06-03 | 1983-12-10 | Mitsubishi Electric Corp | Semiconductor memory device |
JPS6228517B2 (en) * | 1982-06-03 | 1987-06-20 | Mitsubishi Electric Corp | |
JPS593785A (en) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | Semiconductor memory |
JPH041435B2 (en) * | 1982-06-30 | 1992-01-13 | Fujitsu Ltd | |
JPS6258077B2 (en) * | 1982-08-11 | 1987-12-03 | Tokyo Shibaura Electric Co | |
JPS5930294A (en) * | 1982-08-11 | 1984-02-17 | Toshiba Corp | Semiconductor storage device |
JPS59151399A (en) * | 1983-02-17 | 1984-08-29 | Mitsubishi Electric Corp | Semiconductor storage device |
JPH0463479B2 (en) * | 1983-02-17 | 1992-10-09 | Mitsubishi Electric Corp | |
JPS6040596A (en) * | 1983-07-14 | 1985-03-02 | ハネウエル・インコ−ポレ−テツド | Electronic device |
JPS60167188A (en) * | 1984-12-24 | 1985-08-30 | Hitachi Ltd | Semiconductor memory |
JPH0472318B2 (en) * | 1984-12-24 | 1992-11-17 | Hitachi Ltd | |
JPS62149095A (en) * | 1986-12-12 | 1987-07-03 | Mitsubishi Electric Corp | Semiconductor memory device |
JPS62149096A (en) * | 1986-12-12 | 1987-07-03 | Mitsubishi Electric Corp | Semiconductor memory device |
JPS62149097A (en) * | 1986-12-12 | 1987-07-03 | Mitsubishi Electric Corp | Semiconductor memory device |
JPH0413798B2 (en) * | 1986-12-12 | 1992-03-10 | Mitsubishi Electric Corp | |
JPH0421957B2 (en) * | 1986-12-12 | 1992-04-14 | Mitsubishi Electric Corp | |
JPS62183095A (en) * | 1986-12-24 | 1987-08-11 | Mitsubishi Electric Corp | Semiconductor memory device |
JPS62183094A (en) * | 1986-12-24 | 1987-08-11 | Mitsubishi Electric Corp | Semiconductor memory device |
JPH0421959B2 (en) * | 1986-12-24 | 1992-04-14 | Mitsubishi Electric Corp | |
JPH0421958B2 (en) * | 1986-12-24 | 1992-04-14 | Mitsubishi Electric Corp | |
JPH0696580A (en) * | 1992-11-30 | 1994-04-08 | Toshiba Corp | Semiconductor memory |
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