DE3379621D1 - Semiconductor integrated circuit device and a method for manufacturing the same - Google Patents

Semiconductor integrated circuit device and a method for manufacturing the same

Info

Publication number
DE3379621D1
DE3379621D1 DE8383111719T DE3379621T DE3379621D1 DE 3379621 D1 DE3379621 D1 DE 3379621D1 DE 8383111719 T DE8383111719 T DE 8383111719T DE 3379621 T DE3379621 T DE 3379621T DE 3379621 D1 DE3379621 D1 DE 3379621D1
Authority
DE
Germany
Prior art keywords
manufacturing
same
integrated circuit
semiconductor integrated
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8383111719T
Other languages
German (de)
English (en)
Inventor
Atsuo Watanabe
Takahide Ikeda
Kiyoshi Tsukuda
Mitsuru Hirao
Touji Mukai
Tatsuya Kamei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE3379621D1 publication Critical patent/DE3379621D1/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/996—Masterslice integrated circuits using combined field effect technology and bipolar technology
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
DE8383111719T 1982-11-24 1983-11-23 Semiconductor integrated circuit device and a method for manufacturing the same Expired DE3379621D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57204671A JPS5994861A (ja) 1982-11-24 1982-11-24 半導体集積回路装置及びその製造方法

Publications (1)

Publication Number Publication Date
DE3379621D1 true DE3379621D1 (en) 1989-05-18

Family

ID=16494359

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8383111719T Expired DE3379621D1 (en) 1982-11-24 1983-11-23 Semiconductor integrated circuit device and a method for manufacturing the same

Country Status (5)

Country Link
US (5) US4980744A (en:Method)
EP (1) EP0110313B1 (en:Method)
JP (1) JPS5994861A (en:Method)
KR (1) KR900000817B1 (en:Method)
DE (1) DE3379621D1 (en:Method)

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Also Published As

Publication number Publication date
KR840006872A (ko) 1984-12-03
US4980744A (en) 1990-12-25
JPH058583B2 (en:Method) 1993-02-02
US5508549A (en) 1996-04-16
US4921811A (en) 1990-05-01
KR900000817B1 (en) 1990-02-17
US5049967A (en) 1991-09-17
EP0110313B1 (en) 1989-04-12
US5672897A (en) 1997-09-30
JPS5994861A (ja) 1984-05-31
EP0110313A3 (en) 1986-02-05
EP0110313A2 (en) 1984-06-13

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