DE3321201C2 - Tiegel zum Kristallziehen - Google Patents
Tiegel zum KristallziehenInfo
- Publication number
- DE3321201C2 DE3321201C2 DE3321201A DE3321201A DE3321201C2 DE 3321201 C2 DE3321201 C2 DE 3321201C2 DE 3321201 A DE3321201 A DE 3321201A DE 3321201 A DE3321201 A DE 3321201A DE 3321201 C2 DE3321201 C2 DE 3321201C2
- Authority
- DE
- Germany
- Prior art keywords
- crucible
- melt
- capillary
- opening
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000013078 crystal Substances 0.000 title claims description 21
- 239000000155 melt Substances 0.000 claims description 14
- 239000000843 powder Substances 0.000 claims description 7
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 230000000284 resting effect Effects 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 230000006698 induction Effects 0.000 claims description 2
- 238000012835 hanging drop method Methods 0.000 claims 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 238000002425 crystallisation Methods 0.000 claims 1
- 230000008025 crystallization Effects 0.000 claims 1
- 230000000694 effects Effects 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 230000008595 infiltration Effects 0.000 claims 1
- 238000001764 infiltration Methods 0.000 claims 1
- 230000001788 irregular Effects 0.000 claims 1
- 230000014759 maintenance of location Effects 0.000 claims 1
- 238000010309 melting process Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical class [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- 241001311578 Calyptraea chinensis Species 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/007—Pulling on a substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/91—Downward pulling
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8210174A FR2528454A1 (fr) | 1982-06-11 | 1982-06-11 | Creuset modifie pour la methode de cristallisation par goutte pendante |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3321201A1 DE3321201A1 (de) | 1983-12-15 |
| DE3321201C2 true DE3321201C2 (de) | 1986-08-21 |
Family
ID=9274876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE3321201A Expired DE3321201C2 (de) | 1982-06-11 | 1983-06-11 | Tiegel zum Kristallziehen |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US4495155A (OSRAM) |
| JP (1) | JPS593095A (OSRAM) |
| CH (1) | CH651325A5 (OSRAM) |
| DE (1) | DE3321201C2 (OSRAM) |
| FR (1) | FR2528454A1 (OSRAM) |
| GB (1) | GB2122104A (OSRAM) |
| IL (1) | IL68435A (OSRAM) |
| IT (1) | IT8367646A0 (OSRAM) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2556095B1 (fr) * | 1983-12-02 | 1986-09-05 | Philips Ind Commerciale | Procede automatique de dosage d'echantillon et machine automatique pour doser et analyser |
| US5031229A (en) * | 1989-09-13 | 1991-07-09 | Chow Loren A | Deposition heaters |
| US5157240A (en) * | 1989-09-13 | 1992-10-20 | Chow Loren A | Deposition heaters |
| US5085582A (en) * | 1990-07-24 | 1992-02-04 | Eaton Corporation | Silicon nitride containers for the sintering of silicon nitride ceramics |
| JP3527203B2 (ja) * | 1998-05-29 | 2004-05-17 | 東洋通信機株式会社 | 単結晶製造装置および単結晶製造方法 |
| JP4597619B2 (ja) * | 2003-12-26 | 2010-12-15 | シルトロニック・ジャパン株式会社 | シリコン結晶育成用るつぼ及びシリコン結晶の育成方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB337995A (en) * | 1928-11-27 | 1930-11-13 | Vaw Ver Aluminium Werke Ag | Improvements in and relating to the electrolytic production of aluminium |
| US3598282A (en) * | 1969-11-25 | 1971-08-10 | Henry A Phillips | Apparatus for melting and feeding solidified material |
| DE2137088A1 (de) * | 1970-07-28 | 1972-02-10 | Philips Nv | Verfahren zum Herstellen von Kristallen |
| FR2321326A1 (fr) * | 1975-08-08 | 1977-03-18 | Ugine Kuhlmann | Procede de fabrication en continu de monocristaux preformes |
| DE2635373C2 (de) * | 1975-08-08 | 1982-04-15 | PCUK-Produits Chimiques Ugine Kuhlmann, 92400 Courbevoie, Hauts-de-Seine | Verfahren und Vorrichtung zur kontinuierlichen Züchtung von Einkristallen bestimmter Form |
| FR2359639A2 (fr) * | 1976-07-27 | 1978-02-24 | Ugine Kuhlmann | Dispositif pour fabriquer des tubes et des ensembles de petits cylindres monocristallins |
| FR2376697A2 (fr) * | 1977-01-11 | 1978-08-04 | Ugine Kuhlmann | Dispositif de fabrication en continu de monocristaux preformes en forme de plaques |
| FR2401696A1 (fr) * | 1977-08-31 | 1979-03-30 | Ugine Kuhlmann | Methode de depot de silicium cristallin en films minces sur substrats graphites |
| US4394006A (en) * | 1982-04-07 | 1983-07-19 | Electric Power Research Institute, Inc. | Molten metal flow control |
-
1982
- 1982-06-11 FR FR8210174A patent/FR2528454A1/fr active Granted
-
1983
- 1983-04-19 IL IL68435A patent/IL68435A/xx unknown
- 1983-05-19 GB GB08313893A patent/GB2122104A/en not_active Withdrawn
- 1983-05-23 US US06/496,893 patent/US4495155A/en not_active Expired - Fee Related
- 1983-06-10 IT IT8367646A patent/IT8367646A0/it unknown
- 1983-06-10 CH CH3207/83A patent/CH651325A5/fr not_active IP Right Cessation
- 1983-06-10 JP JP58102965A patent/JPS593095A/ja active Pending
- 1983-06-11 DE DE3321201A patent/DE3321201C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IL68435A (en) | 1986-08-31 |
| US4495155A (en) | 1985-01-22 |
| DE3321201A1 (de) | 1983-12-15 |
| GB2122104A (en) | 1984-01-11 |
| IL68435A0 (en) | 1983-07-31 |
| FR2528454A1 (fr) | 1983-12-16 |
| CH651325A5 (fr) | 1985-09-13 |
| FR2528454B1 (OSRAM) | 1984-11-23 |
| IT8367646A0 (it) | 1983-06-10 |
| JPS593095A (ja) | 1984-01-09 |
| GB8313893D0 (en) | 1983-06-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |