FR2528454B1 - - Google Patents

Info

Publication number
FR2528454B1
FR2528454B1 FR8210174A FR8210174A FR2528454B1 FR 2528454 B1 FR2528454 B1 FR 2528454B1 FR 8210174 A FR8210174 A FR 8210174A FR 8210174 A FR8210174 A FR 8210174A FR 2528454 B1 FR2528454 B1 FR 2528454B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8210174A
Other languages
French (fr)
Other versions
FR2528454A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Criceram
Original Assignee
Criceram
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Criceram filed Critical Criceram
Priority to FR8210174A priority Critical patent/FR2528454A1/fr
Priority to IL68435A priority patent/IL68435A/xx
Priority to GB08313893A priority patent/GB2122104A/en
Priority to US06/496,893 priority patent/US4495155A/en
Priority to JP58102965A priority patent/JPS593095A/ja
Priority to CH3207/83A priority patent/CH651325A5/fr
Priority to IT8367646A priority patent/IT8367646A0/it
Priority to DE3321201A priority patent/DE3321201C2/de
Publication of FR2528454A1 publication Critical patent/FR2528454A1/fr
Application granted granted Critical
Publication of FR2528454B1 publication Critical patent/FR2528454B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/007—Pulling on a substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR8210174A 1982-06-11 1982-06-11 Creuset modifie pour la methode de cristallisation par goutte pendante Granted FR2528454A1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR8210174A FR2528454A1 (fr) 1982-06-11 1982-06-11 Creuset modifie pour la methode de cristallisation par goutte pendante
IL68435A IL68435A (en) 1982-06-11 1983-04-19 Crucible for production of monocrystals by the hanging drop method
GB08313893A GB2122104A (en) 1982-06-11 1983-05-19 Crucible for crystallisation
US06/496,893 US4495155A (en) 1982-06-11 1983-05-23 Modified crucible for the pendant drop method of crystallization
JP58102965A JPS593095A (ja) 1982-06-11 1983-06-10 ルツボ
CH3207/83A CH651325A5 (fr) 1982-06-11 1983-06-10 Creuset pour la fabrication de monocristaux par la methode de cristallisation par goutte pendante.
IT8367646A IT8367646A0 (it) 1982-06-11 1983-06-10 Crogiolo utilizzabile nel procedimento di cristallizzazione a goccia pendente
DE3321201A DE3321201C2 (de) 1982-06-11 1983-06-11 Tiegel zum Kristallziehen

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8210174A FR2528454A1 (fr) 1982-06-11 1982-06-11 Creuset modifie pour la methode de cristallisation par goutte pendante

Publications (2)

Publication Number Publication Date
FR2528454A1 FR2528454A1 (fr) 1983-12-16
FR2528454B1 true FR2528454B1 (OSRAM) 1984-11-23

Family

ID=9274876

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8210174A Granted FR2528454A1 (fr) 1982-06-11 1982-06-11 Creuset modifie pour la methode de cristallisation par goutte pendante

Country Status (8)

Country Link
US (1) US4495155A (OSRAM)
JP (1) JPS593095A (OSRAM)
CH (1) CH651325A5 (OSRAM)
DE (1) DE3321201C2 (OSRAM)
FR (1) FR2528454A1 (OSRAM)
GB (1) GB2122104A (OSRAM)
IL (1) IL68435A (OSRAM)
IT (1) IT8367646A0 (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2556095B1 (fr) * 1983-12-02 1986-09-05 Philips Ind Commerciale Procede automatique de dosage d'echantillon et machine automatique pour doser et analyser
US5031229A (en) * 1989-09-13 1991-07-09 Chow Loren A Deposition heaters
US5157240A (en) * 1989-09-13 1992-10-20 Chow Loren A Deposition heaters
US5085582A (en) * 1990-07-24 1992-02-04 Eaton Corporation Silicon nitride containers for the sintering of silicon nitride ceramics
US6402834B1 (en) * 1998-05-29 2002-06-11 Toyo Communication Equipment Co., Ltd. Apparatus and method for manufacturing monocrystals
JP4597619B2 (ja) * 2003-12-26 2010-12-15 シルトロニック・ジャパン株式会社 シリコン結晶育成用るつぼ及びシリコン結晶の育成方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB337995A (en) * 1928-11-27 1930-11-13 Vaw Ver Aluminium Werke Ag Improvements in and relating to the electrolytic production of aluminium
US3598282A (en) * 1969-11-25 1971-08-10 Henry A Phillips Apparatus for melting and feeding solidified material
IT939745B (it) * 1970-07-28 1973-02-10 Procedimento ed apparecchio per la crescita di cristalli e cristallo ottenuto con il procedimento e l ap parecchio
FR2321326A1 (fr) * 1975-08-08 1977-03-18 Ugine Kuhlmann Procede de fabrication en continu de monocristaux preformes
DE2635373C2 (de) * 1975-08-08 1982-04-15 PCUK-Produits Chimiques Ugine Kuhlmann, 92400 Courbevoie, Hauts-de-Seine Verfahren und Vorrichtung zur kontinuierlichen Züchtung von Einkristallen bestimmter Form
FR2359639A2 (fr) * 1976-07-27 1978-02-24 Ugine Kuhlmann Dispositif pour fabriquer des tubes et des ensembles de petits cylindres monocristallins
FR2376697A2 (fr) * 1977-01-11 1978-08-04 Ugine Kuhlmann Dispositif de fabrication en continu de monocristaux preformes en forme de plaques
FR2401696A1 (fr) * 1977-08-31 1979-03-30 Ugine Kuhlmann Methode de depot de silicium cristallin en films minces sur substrats graphites
US4394006A (en) * 1982-04-07 1983-07-19 Electric Power Research Institute, Inc. Molten metal flow control

Also Published As

Publication number Publication date
US4495155A (en) 1985-01-22
IL68435A (en) 1986-08-31
GB2122104A (en) 1984-01-11
JPS593095A (ja) 1984-01-09
DE3321201A1 (de) 1983-12-15
DE3321201C2 (de) 1986-08-21
IL68435A0 (en) 1983-07-31
FR2528454A1 (fr) 1983-12-16
GB8313893D0 (en) 1983-06-22
CH651325A5 (fr) 1985-09-13
IT8367646A0 (it) 1983-06-10

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Legal Events

Date Code Title Description
TP Transmission of property
ST Notification of lapse