DE3136141A1 - Photoleitfaehiges element - Google Patents

Photoleitfaehiges element

Info

Publication number
DE3136141A1
DE3136141A1 DE19813136141 DE3136141A DE3136141A1 DE 3136141 A1 DE3136141 A1 DE 3136141A1 DE 19813136141 DE19813136141 DE 19813136141 DE 3136141 A DE3136141 A DE 3136141A DE 3136141 A1 DE3136141 A1 DE 3136141A1
Authority
DE
Germany
Prior art keywords
photoconductive
layer
element according
photoconductive element
atoms
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19813136141
Other languages
German (de)
English (en)
Other versions
DE3136141C2 (enFirst
Inventor
Eiichi Setagaya Tokyo Inoue
Isamu Yokohama Kanagawa Shimizu
Shigeru Yamato Kanagawa Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP55127542A external-priority patent/JPS5752179A/ja
Priority claimed from JP55127543A external-priority patent/JPS5752180A/ja
Priority claimed from JP55127490A external-priority patent/JPS5752178A/ja
Priority claimed from JP55133209A external-priority patent/JPS5756846A/ja
Priority claimed from JP55133211A external-priority patent/JPS5756848A/ja
Priority claimed from JP55133210A external-priority patent/JPS5756847A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE3136141A1 publication Critical patent/DE3136141A1/de
Application granted granted Critical
Publication of DE3136141C2 publication Critical patent/DE3136141C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H10F30/15—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors comprising amorphous semiconductors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
DE19813136141 1980-09-12 1981-09-11 Photoleitfaehiges element Granted DE3136141A1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP55127542A JPS5752179A (en) 1980-09-12 1980-09-12 Photoconductive member
JP55127543A JPS5752180A (en) 1980-09-12 1980-09-12 Photoconductive member
JP55127490A JPS5752178A (en) 1980-09-13 1980-09-13 Photoconductive member
JP55133209A JPS5756846A (en) 1980-09-24 1980-09-24 Photoconductive member
JP55133211A JPS5756848A (en) 1980-09-24 1980-09-24 Photoconductive member
JP55133210A JPS5756847A (en) 1980-09-24 1980-09-24 Photoconductive member

Publications (2)

Publication Number Publication Date
DE3136141A1 true DE3136141A1 (de) 1982-04-15
DE3136141C2 DE3136141C2 (enFirst) 1988-05-26

Family

ID=27552709

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813136141 Granted DE3136141A1 (de) 1980-09-12 1981-09-11 Photoleitfaehiges element

Country Status (5)

Country Link
US (1) US4394425A (enFirst)
CA (1) CA1181630A (enFirst)
DE (1) DE3136141A1 (enFirst)
FR (1) FR2490359B1 (enFirst)
GB (1) GB2086133B (enFirst)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0211421A1 (en) * 1985-08-03 1987-02-25 Matsushita Electric Industrial Co., Ltd. Electrophotographic photoreceptor
EP0250916A1 (en) * 1986-06-10 1988-01-07 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer and process for preparing same

Families Citing this family (51)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55127561A (en) * 1979-03-26 1980-10-02 Canon Inc Image forming member for electrophotography
US5143808A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5144367A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
GB2115570B (en) * 1981-12-28 1985-07-10 Canon Kk Photoconductive member
US4536459A (en) * 1982-03-12 1985-08-20 Canon Kabushiki Kaisha Photoconductive member having multiple amorphous layers
US4795688A (en) * 1982-03-16 1989-01-03 Canon Kabushiki Kaisha Layered photoconductive member comprising amorphous silicon
US4490454A (en) * 1982-03-17 1984-12-25 Canon Kabushiki Kaisha Photoconductive member comprising multiple amorphous layers
US4510224A (en) * 1982-05-06 1985-04-09 Konishiroku Photo Industry Co., Ltd. Electrophotographic photoreceptors having amorphous silicon photoconductors
JPS58217938A (ja) * 1982-06-12 1983-12-19 Konishiroku Photo Ind Co Ltd 電子写真感光体
JPS59184360A (ja) * 1983-04-04 1984-10-19 Fuji Photo Film Co Ltd 電子写真用感光体
JPS59193463A (ja) * 1983-04-18 1984-11-02 Canon Inc 電子写真用光導電部材
DE3420741C2 (de) * 1983-06-02 1996-03-28 Minolta Camera Kk Elektrophotographisches Aufzeichnungsmaterial
JPS6012554A (ja) * 1983-07-04 1985-01-22 Fuji Photo Film Co Ltd 電子写真用感光体
JPS6014248A (ja) * 1983-07-06 1985-01-24 Fuji Photo Film Co Ltd 電子写真用感光体
JPS6032055A (ja) * 1983-08-03 1985-02-19 Canon Inc 像保持部材
US4659639A (en) * 1983-09-22 1987-04-21 Minolta Camera Kabushiki Kaisha Photosensitive member with an amorphous silicon-containing insulating layer
US4544617A (en) * 1983-11-02 1985-10-01 Xerox Corporation Electrophotographic devices containing overcoated amorphous silicon compositions
JPS60146251A (ja) * 1984-01-10 1985-08-01 Sharp Corp 電子写真用感光体の製造方法
CA1254433A (en) * 1984-02-13 1989-05-23 Tetsuo Sueda Light receiving member
US4619729A (en) * 1984-02-14 1986-10-28 Energy Conversion Devices, Inc. Microwave method of making semiconductor members
EP0151754B1 (en) * 1984-02-14 1991-12-18 Energy Conversion Devices, Inc. An improved method of making a photoconductive member
DE3546544C2 (enFirst) * 1984-02-28 1990-02-15 Sharp K.K., Osaka, Jp
DE3511315A1 (de) * 1984-03-28 1985-10-24 Konishiroku Photo Industry Co., Ltd., Tokio/Tokyo Elektrostatographisches, insbesondere elektrophotographisches aufzeichnungsmaterial
JPS60212768A (ja) * 1984-04-06 1985-10-25 Canon Inc 光受容部材
CA1254434A (en) * 1984-04-06 1989-05-23 Keishi Saitoh Light receiving member
US4705733A (en) * 1984-04-24 1987-11-10 Canon Kabushiki Kaisha Member having light receiving layer and substrate with overlapping subprojections
US4705732A (en) * 1984-04-27 1987-11-10 Canon Kabushiki Kaisha Member having substrate with projecting portions at surface and light receiving layer of amorphous silicon
JPS60257453A (ja) * 1984-06-04 1985-12-19 Canon Inc 光受容部材
US4705731A (en) * 1984-06-05 1987-11-10 Canon Kabushiki Kaisha Member having substrate with protruding surface light receiving layer of amorphous silicon and surface reflective layer
US4624862A (en) * 1984-11-05 1986-11-25 Energy Conversion Devices, Inc. Boron doped semiconductor materials and method for producing same
US4666803A (en) * 1984-11-26 1987-05-19 Kabushiki Kaisha Toshiba Photoconductive member for exhibiting photoconductivity upon illumination by electromagnetic light in the visible to ultraviolet range
JPH0772802B2 (ja) * 1985-01-09 1995-08-02 株式会社日立製作所 電子写真感光体の製造法
JPS61221752A (ja) * 1985-03-12 1986-10-02 Sharp Corp 電子写真感光体
JPS625255A (ja) * 1985-07-01 1987-01-12 Minolta Camera Co Ltd 感光体
US4663258A (en) * 1985-09-30 1987-05-05 Xerox Corporation Overcoated amorphous silicon imaging members
JPS6290663A (ja) * 1985-10-17 1987-04-25 Canon Inc 光受容部材
US4777103A (en) * 1985-10-30 1988-10-11 Fujitsu Limited Electrophotographic multi-layered photosensitive member having a top protective layer of hydrogenated amorphous silicon carbide and method for fabricating the same
JPS62106470A (ja) * 1985-11-02 1987-05-16 Canon Inc 光受容部材
ES2022322B3 (es) * 1986-02-05 1991-12-01 Canon Kk Miembro receptor de luz para electrofotografia
EP0252442A3 (en) * 1986-07-08 1990-04-18 Minolta Camera Kabushiki Kaisha Photosensitive member having an overcoat layer
JPS6373259A (ja) * 1986-09-16 1988-04-02 Minolta Camera Co Ltd 感光体
EP0262570A3 (en) * 1986-09-26 1989-11-23 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
EP0261653A3 (en) * 1986-09-26 1989-11-23 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer
EP0264104B1 (en) * 1986-10-14 1995-12-27 Minolta Co., Ltd. Electrophotographic photosensitive member having an overcoat layer
US5000831A (en) * 1987-03-09 1991-03-19 Minolta Camera Kabushiki Kaisha Method of production of amorphous hydrogenated carbon layer
US4891291A (en) * 1987-03-09 1990-01-02 Minolta Camera Kabushiki Kaisha Photosensitive member having an amorphous carbon overcoat layer
US4886724A (en) * 1987-03-09 1989-12-12 Minolta Camera Kabushiki Kaisha Photosensitive member having an overcoat layer and process for manufacturing the same
US4994337A (en) * 1987-06-17 1991-02-19 Minolta Camera Kabushiki Kaisha Photosensitive member having an overcoat layer
JPS6428654A (en) * 1987-07-24 1989-01-31 Hitachi Ltd Electrophotographic sensitive body
DE69326878T2 (de) * 1992-12-14 2000-04-27 Canon K.K., Tokio/Tokyo Lichtempfindliches Element mit einer mehrschichtigen Schicht mit erhöhter Wasserstoff oder/und Halogenatom Konzentration im Grenzflächenbereich benachbarter Schichten
US20130341623A1 (en) 2012-06-20 2013-12-26 International Business Machines Corporation Photoreceptor with improved blocking layer

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2746967A1 (de) * 1977-10-19 1979-04-26 Siemens Ag Drucktrommel fuer elektrostatisches kopierverfahren
DE2855718A1 (de) * 1977-12-22 1979-06-28 Canon Kk Lichtempfindliches element fuer die elektrophotographie und verfahren zu dessen herstellung
DE2908123A1 (de) * 1978-03-03 1979-09-06 Canon Kk Bildaufzeichnungsmaterial fuer elektrophotographie
GB2029642A (en) * 1978-08-18 1980-03-19 Hitachi Ltd Solid state imaging device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3650737A (en) * 1968-03-25 1972-03-21 Ibm Imaging method using photoconductive element having a protective coating
US4317844A (en) * 1975-07-28 1982-03-02 Rca Corporation Semiconductor device having a body of amorphous silicon and method of making the same
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
US4253882A (en) * 1980-02-15 1981-03-03 University Of Delaware Multiple gap photovoltaic device
JPS574053A (en) * 1980-06-09 1982-01-09 Canon Inc Photoconductive member
JPS574172A (en) * 1980-06-09 1982-01-09 Canon Inc Light conductive member
JPS5727263A (en) * 1980-07-28 1982-02-13 Hitachi Ltd Electrophotographic photosensitive film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2746967A1 (de) * 1977-10-19 1979-04-26 Siemens Ag Drucktrommel fuer elektrostatisches kopierverfahren
DE2855718A1 (de) * 1977-12-22 1979-06-28 Canon Kk Lichtempfindliches element fuer die elektrophotographie und verfahren zu dessen herstellung
DE2908123A1 (de) * 1978-03-03 1979-09-06 Canon Kk Bildaufzeichnungsmaterial fuer elektrophotographie
GB2029642A (en) * 1978-08-18 1980-03-19 Hitachi Ltd Solid state imaging device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0211421A1 (en) * 1985-08-03 1987-02-25 Matsushita Electric Industrial Co., Ltd. Electrophotographic photoreceptor
EP0250916A1 (en) * 1986-06-10 1988-01-07 Minolta Camera Kabushiki Kaisha Photosensitive member comprising charge generating layer and charge transporting layer and process for preparing same

Also Published As

Publication number Publication date
GB2086133B (en) 1985-06-12
DE3136141C2 (enFirst) 1988-05-26
US4394425A (en) 1983-07-19
CA1181630A (en) 1985-01-29
GB2086133A (en) 1982-05-06
FR2490359A1 (fr) 1982-03-19
FR2490359B1 (fr) 1986-08-14

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: G03G 5/14

D2 Grant after examination
8364 No opposition during term of opposition