FR2490359B1 - Element photoconducteur - Google Patents

Element photoconducteur

Info

Publication number
FR2490359B1
FR2490359B1 FR8117327A FR8117327A FR2490359B1 FR 2490359 B1 FR2490359 B1 FR 2490359B1 FR 8117327 A FR8117327 A FR 8117327A FR 8117327 A FR8117327 A FR 8117327A FR 2490359 B1 FR2490359 B1 FR 2490359B1
Authority
FR
France
Prior art keywords
photoconductive element
photoconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8117327A
Other languages
English (en)
Other versions
FR2490359A1 (fr
Inventor
Isamu Shimizu
Shigeru Shirai
Eiichi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP55127543A external-priority patent/JPS5752180A/ja
Priority claimed from JP55127542A external-priority patent/JPS5752179A/ja
Priority claimed from JP55127490A external-priority patent/JPS5752178A/ja
Priority claimed from JP55133210A external-priority patent/JPS5756847A/ja
Priority claimed from JP55133209A external-priority patent/JPS5756846A/ja
Priority claimed from JP55133211A external-priority patent/JPS5756848A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of FR2490359A1 publication Critical patent/FR2490359A1/fr
Application granted granted Critical
Publication of FR2490359B1 publication Critical patent/FR2490359B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08221—Silicon-based comprising one or two silicon based layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08214—Silicon-based
    • G03G5/08235—Silicon-based comprising three or four silicon-based layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Light Receiving Elements (AREA)
FR8117327A 1980-09-12 1981-09-14 Element photoconducteur Expired FR2490359B1 (fr)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP55127543A JPS5752180A (en) 1980-09-12 1980-09-12 Photoconductive member
JP55127542A JPS5752179A (en) 1980-09-12 1980-09-12 Photoconductive member
JP55127490A JPS5752178A (en) 1980-09-13 1980-09-13 Photoconductive member
JP55133210A JPS5756847A (en) 1980-09-24 1980-09-24 Photoconductive member
JP55133209A JPS5756846A (en) 1980-09-24 1980-09-24 Photoconductive member
JP55133211A JPS5756848A (en) 1980-09-24 1980-09-24 Photoconductive member

Publications (2)

Publication Number Publication Date
FR2490359A1 FR2490359A1 (fr) 1982-03-19
FR2490359B1 true FR2490359B1 (fr) 1986-08-14

Family

ID=27552709

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8117327A Expired FR2490359B1 (fr) 1980-09-12 1981-09-14 Element photoconducteur

Country Status (5)

Country Link
US (1) US4394425A (fr)
CA (1) CA1181630A (fr)
DE (1) DE3136141A1 (fr)
FR (1) FR2490359B1 (fr)
GB (1) GB2086133B (fr)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55127561A (en) * 1979-03-26 1980-10-02 Canon Inc Image forming member for electrophotography
US5144367A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US5143808A (en) * 1980-06-25 1992-09-01 Semiconductor Energy Laboratory Co., Ltd. Printing member for electrostatic photocopying
US4483911A (en) * 1981-12-28 1984-11-20 Canon Kabushiki Kaisha Photoconductive member with amorphous silicon-carbon surface layer
US4536459A (en) * 1982-03-12 1985-08-20 Canon Kabushiki Kaisha Photoconductive member having multiple amorphous layers
US4795688A (en) * 1982-03-16 1989-01-03 Canon Kabushiki Kaisha Layered photoconductive member comprising amorphous silicon
US4490454A (en) * 1982-03-17 1984-12-25 Canon Kabushiki Kaisha Photoconductive member comprising multiple amorphous layers
US4510224A (en) * 1982-05-06 1985-04-09 Konishiroku Photo Industry Co., Ltd. Electrophotographic photoreceptors having amorphous silicon photoconductors
JPS58217938A (ja) * 1982-06-12 1983-12-19 Konishiroku Photo Ind Co Ltd 電子写真感光体
JPS59184360A (ja) * 1983-04-04 1984-10-19 Fuji Photo Film Co Ltd 電子写真用感光体
JPS59193463A (ja) * 1983-04-18 1984-11-02 Canon Inc 電子写真用光導電部材
DE3420741C2 (de) * 1983-06-02 1996-03-28 Minolta Camera Kk Elektrophotographisches Aufzeichnungsmaterial
JPS6012554A (ja) * 1983-07-04 1985-01-22 Fuji Photo Film Co Ltd 電子写真用感光体
JPS6014248A (ja) * 1983-07-06 1985-01-24 Fuji Photo Film Co Ltd 電子写真用感光体
JPS6032055A (ja) * 1983-08-03 1985-02-19 Canon Inc 像保持部材
US4659639A (en) * 1983-09-22 1987-04-21 Minolta Camera Kabushiki Kaisha Photosensitive member with an amorphous silicon-containing insulating layer
US4544617A (en) * 1983-11-02 1985-10-01 Xerox Corporation Electrophotographic devices containing overcoated amorphous silicon compositions
JPS60146251A (ja) * 1984-01-10 1985-08-01 Sharp Corp 電子写真用感光体の製造方法
CA1254433A (fr) * 1984-02-13 1989-05-23 Tetsuo Sueda Organe photorecepteur
US4619729A (en) * 1984-02-14 1986-10-28 Energy Conversion Devices, Inc. Microwave method of making semiconductor members
DE151754T1 (de) * 1984-02-14 1986-01-16 Energy Conversion Devices, Inc., Troy, Mich. Verfahren zur herstellung eines fotoleitfaehigen elementes und auf diese weise hergestellte fotoleitfaehige elemente.
DE3506657A1 (de) * 1984-02-28 1985-09-05 Sharp K.K., Osaka Photoleitfaehige vorrichtung
DE3511315A1 (de) * 1984-03-28 1985-10-24 Konishiroku Photo Industry Co., Ltd., Tokio/Tokyo Elektrostatographisches, insbesondere elektrophotographisches aufzeichnungsmaterial
AU558667B2 (en) * 1984-04-06 1987-02-05 Canon Kabushiki Kaisha Light receiving member
JPS60212768A (ja) * 1984-04-06 1985-10-25 Canon Inc 光受容部材
US4705733A (en) * 1984-04-24 1987-11-10 Canon Kabushiki Kaisha Member having light receiving layer and substrate with overlapping subprojections
US4705732A (en) * 1984-04-27 1987-11-10 Canon Kabushiki Kaisha Member having substrate with projecting portions at surface and light receiving layer of amorphous silicon
JPS60257453A (ja) * 1984-06-04 1985-12-19 Canon Inc 光受容部材
US4705731A (en) * 1984-06-05 1987-11-10 Canon Kabushiki Kaisha Member having substrate with protruding surface light receiving layer of amorphous silicon and surface reflective layer
US4624862A (en) * 1984-11-05 1986-11-25 Energy Conversion Devices, Inc. Boron doped semiconductor materials and method for producing same
US4666803A (en) * 1984-11-26 1987-05-19 Kabushiki Kaisha Toshiba Photoconductive member for exhibiting photoconductivity upon illumination by electromagnetic light in the visible to ultraviolet range
JPH0772802B2 (ja) * 1985-01-09 1995-08-02 株式会社日立製作所 電子写真感光体の製造法
JPS61221752A (ja) * 1985-03-12 1986-10-02 Sharp Corp 電子写真感光体
JPS625255A (ja) * 1985-07-01 1987-01-12 Minolta Camera Co Ltd 感光体
DE3681655D1 (en) * 1985-08-03 1991-10-31 Matsushita Electric Ind Co Ltd Elektrophotographischer photorezeptor.
US4663258A (en) * 1985-09-30 1987-05-05 Xerox Corporation Overcoated amorphous silicon imaging members
JPS6290663A (ja) * 1985-10-17 1987-04-25 Canon Inc 光受容部材
US4777103A (en) * 1985-10-30 1988-10-11 Fujitsu Limited Electrophotographic multi-layered photosensitive member having a top protective layer of hydrogenated amorphous silicon carbide and method for fabricating the same
JPS62106470A (ja) * 1985-11-02 1987-05-16 Canon Inc 光受容部材
EP0241111B1 (fr) * 1986-02-05 1991-04-10 Canon Kabushiki Kaisha Membre photorécepteur pour l'éléctrophotographie
JPS62289848A (ja) * 1986-06-10 1987-12-16 Minolta Camera Co Ltd 感光体
EP0252442A3 (fr) * 1986-07-08 1990-04-18 Minolta Camera Kabushiki Kaisha Elément photosensible ayant une couche de revêtement
JPS6373259A (ja) * 1986-09-16 1988-04-02 Minolta Camera Co Ltd 感光体
EP0262570A3 (fr) * 1986-09-26 1989-11-23 Minolta Camera Kabushiki Kaisha Elément photosensible comprenant une couche génératrice de charges et une couche de transport de charges
EP0261653A3 (fr) * 1986-09-26 1989-11-23 Minolta Camera Kabushiki Kaisha Elément photosensible comprenant une couche génératrice de charges et une couche de transport de charges
DE3751651T2 (de) * 1986-10-14 1996-10-17 Minolta Camera Kk Elektrophotographisches lichtempfindliches Element, das einen Überzug enthält
US4891291A (en) * 1987-03-09 1990-01-02 Minolta Camera Kabushiki Kaisha Photosensitive member having an amorphous carbon overcoat layer
US5000831A (en) * 1987-03-09 1991-03-19 Minolta Camera Kabushiki Kaisha Method of production of amorphous hydrogenated carbon layer
US4886724A (en) * 1987-03-09 1989-12-12 Minolta Camera Kabushiki Kaisha Photosensitive member having an overcoat layer and process for manufacturing the same
US4994337A (en) * 1987-06-17 1991-02-19 Minolta Camera Kabushiki Kaisha Photosensitive member having an overcoat layer
JPS6428654A (en) * 1987-07-24 1989-01-31 Hitachi Ltd Electrophotographic sensitive body
EP0605972B1 (fr) * 1992-12-14 1999-10-27 Canon Kabushiki Kaisha Elément récepteur de lumière ayant une couche réceptrice de lumière à structure multiple avec une concentration améliorée en atomes d'hydrogène ou/et d'halogène à proximité de l'interface des couches adjacentes
US20130341623A1 (en) 2012-06-20 2013-12-26 International Business Machines Corporation Photoreceptor with improved blocking layer

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3650737A (en) * 1968-03-25 1972-03-21 Ibm Imaging method using photoconductive element having a protective coating
US4317844A (en) * 1975-07-28 1982-03-02 Rca Corporation Semiconductor device having a body of amorphous silicon and method of making the same
DE2746967C2 (de) * 1977-10-19 1981-09-24 Siemens AG, 1000 Berlin und 8000 München Elektrofotographische Aufzeichnungstrommel
AU530905B2 (en) * 1977-12-22 1983-08-04 Canon Kabushiki Kaisha Electrophotographic photosensitive member
DE2954552C2 (fr) * 1978-03-03 1989-02-09 Canon K.K., Tokio/Tokyo, Jp
US4217374A (en) * 1978-03-08 1980-08-12 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors
US4226898A (en) * 1978-03-16 1980-10-07 Energy Conversion Devices, Inc. Amorphous semiconductors equivalent to crystalline semiconductors produced by a glow discharge process
JPS554040A (en) * 1978-06-26 1980-01-12 Hitachi Ltd Photoconductive material
FR2433871A1 (fr) * 1978-08-18 1980-03-14 Hitachi Ltd Dispositif de formation d'image a semi-conducteur
US4253882A (en) * 1980-02-15 1981-03-03 University Of Delaware Multiple gap photovoltaic device
JPS574172A (en) * 1980-06-09 1982-01-09 Canon Inc Light conductive member
JPS574053A (en) * 1980-06-09 1982-01-09 Canon Inc Photoconductive member
JPS5727263A (en) * 1980-07-28 1982-02-13 Hitachi Ltd Electrophotographic photosensitive film

Also Published As

Publication number Publication date
FR2490359A1 (fr) 1982-03-19
DE3136141A1 (de) 1982-04-15
US4394425A (en) 1983-07-19
DE3136141C2 (fr) 1988-05-26
GB2086133B (en) 1985-06-12
GB2086133A (en) 1982-05-06
CA1181630A (fr) 1985-01-29

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