FR2495344B1 - Element photoconducteur - Google Patents
Element photoconducteurInfo
- Publication number
- FR2495344B1 FR2495344B1 FR8118696A FR8118696A FR2495344B1 FR 2495344 B1 FR2495344 B1 FR 2495344B1 FR 8118696 A FR8118696 A FR 8118696A FR 8118696 A FR8118696 A FR 8118696A FR 2495344 B1 FR2495344 B1 FR 2495344B1
- Authority
- FR
- France
- Prior art keywords
- photoconductive element
- photoconductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photoreceptors In Electrophotography (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55138981A JPS5763546A (en) | 1980-10-03 | 1980-10-03 | Photoconductive member |
JP55138980A JPS5763545A (en) | 1980-10-03 | 1980-10-03 | Photoconductive member |
JP55138982A JPS5763547A (en) | 1980-10-03 | 1980-10-03 | Photoconductive member |
JP55140961A JPS5764246A (en) | 1980-10-08 | 1980-10-08 | Photoconductive member |
JP55140962A JPS5764247A (en) | 1980-10-08 | 1980-10-08 | Photoconductive member |
JP55140960A JPS5764245A (en) | 1980-10-08 | 1980-10-08 | Photoconductive member |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2495344A1 FR2495344A1 (fr) | 1982-06-04 |
FR2495344B1 true FR2495344B1 (fr) | 1986-07-18 |
Family
ID=27552908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8118696A Expired FR2495344B1 (fr) | 1980-10-03 | 1981-10-05 | Element photoconducteur |
Country Status (4)
Country | Link |
---|---|
CA (1) | CA1181629A (fr) |
DE (1) | DE3139531A1 (fr) |
FR (1) | FR2495344B1 (fr) |
GB (1) | GB2088628B (fr) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4572882A (en) * | 1983-09-09 | 1986-02-25 | Canon Kabushiki Kaisha | Photoconductive member containing amorphous silicon and germanium |
JPS60146251A (ja) * | 1984-01-10 | 1985-08-01 | Sharp Corp | 電子写真用感光体の製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4196438A (en) * | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
US4265991A (en) * | 1977-12-22 | 1981-05-05 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member and process for production thereof |
DE2908123A1 (de) * | 1978-03-03 | 1979-09-06 | Canon Kk | Bildaufzeichnungsmaterial fuer elektrophotographie |
EP0035146B1 (fr) * | 1980-02-15 | 1988-10-12 | Matsushita Electric Industrial Co., Ltd. | Dispositif semiconducteur photoélectrique |
JPS56152280A (en) * | 1980-04-25 | 1981-11-25 | Hitachi Ltd | Light receiving surface |
US4394426A (en) * | 1980-09-25 | 1983-07-19 | Canon Kabushiki Kaisha | Photoconductive member with α-Si(N) barrier layer |
-
1981
- 1981-10-01 GB GB8129627A patent/GB2088628B/en not_active Expired
- 1981-10-02 CA CA000387231A patent/CA1181629A/fr not_active Expired
- 1981-10-05 DE DE19813139531 patent/DE3139531A1/de active Granted
- 1981-10-05 FR FR8118696A patent/FR2495344B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
CA1181629A (fr) | 1985-01-29 |
GB2088628A (en) | 1982-06-09 |
DE3139531A1 (de) | 1982-05-13 |
FR2495344A1 (fr) | 1982-06-04 |
DE3139531C2 (fr) | 1988-12-22 |
GB2088628B (en) | 1985-06-12 |
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