JPS5764247A - Photoconductive member - Google Patents

Photoconductive member

Info

Publication number
JPS5764247A
JPS5764247A JP55140962A JP14096280A JPS5764247A JP S5764247 A JPS5764247 A JP S5764247A JP 55140962 A JP55140962 A JP 55140962A JP 14096280 A JP14096280 A JP 14096280A JP S5764247 A JPS5764247 A JP S5764247A
Authority
JP
Japan
Prior art keywords
atom
intermediate layer
mainly consists
amorphous material
photoconductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55140962A
Other languages
Japanese (ja)
Other versions
JPS6341058B2 (en
Inventor
Isamu Shimizu
Shigeru Shirai
Hidekazu Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP55140962A priority Critical patent/JPS5764247A/en
Priority to GB8129627A priority patent/GB2088628B/en
Priority to CA000387231A priority patent/CA1181629A/en
Priority to US06/308,238 priority patent/US4409308A/en
Priority to DE19813139531 priority patent/DE3139531A1/en
Priority to FR8118696A priority patent/FR2495344B1/en
Publication of JPS5764247A publication Critical patent/JPS5764247A/en
Publication of JPS6341058B2 publication Critical patent/JPS6341058B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/095—Devices sensitive to infrared, visible or ultraviolet radiation comprising amorphous semiconductors

Abstract

PURPOSE:To obtain electric, optical and photoconductive characteristics which are stable at all time, by constituting an intermediate layer of a photoconductive member of a non-conductive amorphous material which mainly consists of an Si atom and an oxygen atom, and contains a halogen atom. CONSTITUTION:An intermediate layer between a supporting body and a photoconductive layer constituted of an amorphous material which mainly consists of an Si atom and contains a halogen atom is constituted of a non-conductive amorphous material which mainly consists of an Si atom and an oxygen atom, and contains a halogen atom (X)[amorphous-(SixO1-x)y;X1-yo, provided that 0<x<1, 0<y<1]. The intermediate layer is formed, for instance, by a glow discharge method or a spattering method.
JP55140962A 1980-10-03 1980-10-08 Photoconductive member Granted JPS5764247A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP55140962A JPS5764247A (en) 1980-10-08 1980-10-08 Photoconductive member
GB8129627A GB2088628B (en) 1980-10-03 1981-10-01 Photoconductive member
CA000387231A CA1181629A (en) 1980-10-03 1981-10-02 Photoconductive member including non-photoconductive layer containing amorphous silicon matrix-containing oxygen
US06/308,238 US4409308A (en) 1980-10-03 1981-10-02 Photoconductive member with two amorphous silicon layers
DE19813139531 DE3139531A1 (en) 1980-10-03 1981-10-05 PHOTO-CONDUCTIVE ELEMENT
FR8118696A FR2495344B1 (en) 1980-10-03 1981-10-05 PHOTOCONDUCTIVE ELEMENT

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55140962A JPS5764247A (en) 1980-10-08 1980-10-08 Photoconductive member

Publications (2)

Publication Number Publication Date
JPS5764247A true JPS5764247A (en) 1982-04-19
JPS6341058B2 JPS6341058B2 (en) 1988-08-15

Family

ID=15280858

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55140962A Granted JPS5764247A (en) 1980-10-03 1980-10-08 Photoconductive member

Country Status (1)

Country Link
JP (1) JPS5764247A (en)

Also Published As

Publication number Publication date
JPS6341058B2 (en) 1988-08-15

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