DE3104960A1 - "feinstdraht" - Google Patents

"feinstdraht"

Info

Publication number
DE3104960A1
DE3104960A1 DE19813104960 DE3104960A DE3104960A1 DE 3104960 A1 DE3104960 A1 DE 3104960A1 DE 19813104960 DE19813104960 DE 19813104960 DE 3104960 A DE3104960 A DE 3104960A DE 3104960 A1 DE3104960 A1 DE 3104960A1
Authority
DE
Germany
Prior art keywords
copper
weight
fine wire
aluminum
fine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19813104960
Other languages
German (de)
English (en)
Other versions
DE3104960C2 (enExample
Inventor
Fritz Dipl.-Ing. Dr. 6458 Rodenbach Aldinger
Albrecht Dipl.-Phys. Dr. 6454 Bruchköbel Bischoff
Wolfgang 6052 Mühlheim Bonifer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WC Heraus GmbH and Co KG
Original Assignee
WC Heraus GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WC Heraus GmbH and Co KG filed Critical WC Heraus GmbH and Co KG
Priority to DE19813104960 priority Critical patent/DE3104960A1/de
Priority to DE3153395A priority patent/DE3153395C2/de
Priority to GB8135741A priority patent/GB2093064B/en
Priority to CH79/82A priority patent/CH652532A5/de
Priority to FR8202254A priority patent/FR2499767A1/fr
Priority to JP57019859A priority patent/JPS57149744A/ja
Publication of DE3104960A1 publication Critical patent/DE3104960A1/de
Application granted granted Critical
Publication of DE3104960C2 publication Critical patent/DE3104960C2/de
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Wire Bonding (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
DE19813104960 1981-02-12 1981-02-12 "feinstdraht" Granted DE3104960A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE19813104960 DE3104960A1 (de) 1981-02-12 1981-02-12 "feinstdraht"
DE3153395A DE3153395C2 (en) 1981-02-12 1981-02-12 Use of a very fine wire made of a copper/tin alloy
GB8135741A GB2093064B (en) 1981-02-12 1981-11-26 External connectors or terminals
CH79/82A CH652532A5 (de) 1981-02-12 1982-01-07 Verwendung eines feinstdrahtes fuer die herstellung der aussenanschluesse von halbleiter-bauelementen.
FR8202254A FR2499767A1 (fr) 1981-02-12 1982-02-11 Application d'un fil metallique extra-fin a la realisation des connexions exterieures de composants a semi-conducteurs
JP57019859A JPS57149744A (en) 1981-02-12 1982-02-12 Extrafine wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813104960 DE3104960A1 (de) 1981-02-12 1981-02-12 "feinstdraht"

Publications (2)

Publication Number Publication Date
DE3104960A1 true DE3104960A1 (de) 1982-08-26
DE3104960C2 DE3104960C2 (enExample) 1987-09-24

Family

ID=6124622

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813104960 Granted DE3104960A1 (de) 1981-02-12 1981-02-12 "feinstdraht"

Country Status (5)

Country Link
JP (1) JPS57149744A (enExample)
CH (1) CH652532A5 (enExample)
DE (1) DE3104960A1 (enExample)
FR (1) FR2499767A1 (enExample)
GB (1) GB2093064B (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3514253A1 (de) * 1984-04-19 1985-10-31 Hitachi, Ltd., Tokio/Tokyo Halbleitereinrichtung
DE3606224A1 (de) * 1985-03-01 1986-09-04 Mitsubishi Denki K.K., Tokio/Tokyo Kugeltyp-bond-draehte fuer halbleitervorrichtungen und verfahren zu ihrer herstellung
DE3610587A1 (de) * 1985-03-27 1986-11-06 Mitsubishi Kinzoku K.K., Tokio/Tokyo Zum bonden von halbleitervorrichtungen geeigneter draht und verfahren zu dessen herstellung
EP1357197A1 (en) * 2002-01-07 2003-10-29 Senju Metal Industry Co., Ltd. Minute copper balls and a method for their manufacture
DE102018122574A1 (de) * 2018-09-14 2020-03-19 Kme Germany Gmbh & Co. Kg Kupferlegierung
DE102019113082A1 (de) * 2019-05-17 2020-11-19 Infineon Technologies Ag Halbleiter-gehäuse und verfahren zum bilden eines halbleiter-gehäuses
DE112017003058B4 (de) * 2016-06-20 2021-06-10 Nippon Micrometal Corporation Kupferlegierungs-Bonddrähte für Halbleiterbauteile
US20230119577A1 (en) * 2021-10-15 2023-04-20 Lincoln Global, Inc. High alloy welding wire with copper based coating

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5149917A (en) * 1990-05-10 1992-09-22 Sumitomo Electric Industries, Ltd. Wire conductor for harness
JPH05184788A (ja) * 1991-12-19 1993-07-27 Daiken Trade & Ind Co Ltd 乾燥庫
JPH0716797U (ja) * 1993-08-27 1995-03-20 武盛 豊永 除湿機付高温衣類乾燥機
JP2501303B2 (ja) * 1994-04-11 1996-05-29 株式会社東芝 半導体装置
JP2501305B2 (ja) * 1994-06-06 1996-05-29 株式会社東芝 半導体装置
JP2501306B2 (ja) * 1994-07-08 1996-05-29 株式会社東芝 半導体装置
DE19606116A1 (de) * 1996-02-20 1997-08-21 Berkenhoff Gmbh Elektrische Kontaktelemente
TWI287282B (en) 2002-03-14 2007-09-21 Fairchild Kr Semiconductor Ltd Semiconductor package having oxidation-free copper wire
WO2006073206A1 (ja) 2005-01-05 2006-07-13 Nippon Steel Materials Co., Ltd. 半導体装置用ボンディングワイヤ
SG10201600329SA (en) * 2016-01-15 2017-08-30 Heraeus Materials Singapore Pte Ltd Coated wire

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1090437B (de) * 1956-08-14 1960-10-06 Nippert Electric Products Comp Verfahren zum Verbessern der elektrischen und mechanischen Eigenschaften von Kupfer-Zirkon-Legierungen
DE1127000B (enExample) * 1956-10-31 1974-04-11
DE2929623A1 (de) * 1979-07-21 1981-01-29 Heraeus Gmbh W C Feinstdraht aus einer aluminiumlegierung
DE3011661A1 (de) * 1980-03-26 1981-10-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit kontaktierungsdraehten
DE3023528A1 (de) 1980-06-24 1982-01-21 W.C. Heraeus Gmbh, 6450 Hanau Feistdraht zum kontaktieren von halbleiter-bauelementen

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678357U (enExample) * 1979-11-09 1981-06-25

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1090437B (de) * 1956-08-14 1960-10-06 Nippert Electric Products Comp Verfahren zum Verbessern der elektrischen und mechanischen Eigenschaften von Kupfer-Zirkon-Legierungen
DE1127000B (enExample) * 1956-10-31 1974-04-11
DE2929623A1 (de) * 1979-07-21 1981-01-29 Heraeus Gmbh W C Feinstdraht aus einer aluminiumlegierung
DE3011661A1 (de) * 1980-03-26 1981-10-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung mit kontaktierungsdraehten
DE3023528A1 (de) 1980-06-24 1982-01-21 W.C. Heraeus Gmbh, 6450 Hanau Feistdraht zum kontaktieren von halbleiter-bauelementen

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
DE-B.: Dies Kurt, Kupfer und Kupferlegierungen in der Technik, Springer-Verlag, Berlin/Heidelberg/New York, 1967, S. 191-206, 214-233, 254-404, 638-651, 704-723, 756-772 *
DE-B: Dies, Kurt: Kupfer und Kupferlegierungen in der Technik, Springer-Verlag, Berlin/Heidelberg/ New York, 1967, S. 504-577
DE-Z.: Umschau, Bd. 74, H. 17, 1974, S. 535-541 *

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3514253A1 (de) * 1984-04-19 1985-10-31 Hitachi, Ltd., Tokio/Tokyo Halbleitereinrichtung
DE3606224A1 (de) * 1985-03-01 1986-09-04 Mitsubishi Denki K.K., Tokio/Tokyo Kugeltyp-bond-draehte fuer halbleitervorrichtungen und verfahren zu ihrer herstellung
US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
DE3610587A1 (de) * 1985-03-27 1986-11-06 Mitsubishi Kinzoku K.K., Tokio/Tokyo Zum bonden von halbleitervorrichtungen geeigneter draht und verfahren zu dessen herstellung
EP1357197A1 (en) * 2002-01-07 2003-10-29 Senju Metal Industry Co., Ltd. Minute copper balls and a method for their manufacture
US6799711B2 (en) 2002-01-07 2004-10-05 Senju Metal Industry Co., Ltd. Minute copper balls and a method for their manufacture
DE112017003058B4 (de) * 2016-06-20 2021-06-10 Nippon Micrometal Corporation Kupferlegierungs-Bonddrähte für Halbleiterbauteile
US12300658B2 (en) 2016-06-20 2025-05-13 Nippon Micrometal Corporation Copper alloy bonding wire for semiconductor devices
DE112017008353B3 (de) 2016-06-20 2022-09-29 Nippon Micrometal Corporation Kupferlegierungs-Bonddrähte für Halbleiterbauteile
DE102018122574B4 (de) * 2018-09-14 2020-11-26 Kme Special Products Gmbh Verwendung einer Kupferlegierung
US12129538B2 (en) 2018-09-14 2024-10-29 Cunova Gmbh Use of a copper alloy
DE102018122574A1 (de) * 2018-09-14 2020-03-19 Kme Germany Gmbh & Co. Kg Kupferlegierung
DE102019113082A1 (de) * 2019-05-17 2020-11-19 Infineon Technologies Ag Halbleiter-gehäuse und verfahren zum bilden eines halbleiter-gehäuses
US11715719B2 (en) 2019-05-17 2023-08-01 Infineon Technologies Ag Semiconductor package and method of forming a semiconductor package
US12261146B2 (en) 2019-05-17 2025-03-25 Infineon Technologies Ag Semiconductor package
US20230119577A1 (en) * 2021-10-15 2023-04-20 Lincoln Global, Inc. High alloy welding wire with copper based coating

Also Published As

Publication number Publication date
JPS57149744A (en) 1982-09-16
JPH0237095B2 (enExample) 1990-08-22
DE3104960C2 (enExample) 1987-09-24
CH652532A5 (de) 1985-11-15
FR2499767A1 (fr) 1982-08-13
GB2093064A (en) 1982-08-25
FR2499767B3 (enExample) 1984-01-06
GB2093064B (en) 1984-10-31

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Owner name: W. C. HERAEUS GMBH & CO. KG, 63450 HANAU, DE