DE2946801C2 - Halbleiteranordnung mit mindestens einem Speicherelement - Google Patents

Halbleiteranordnung mit mindestens einem Speicherelement

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Publication number
DE2946801C2
DE2946801C2 DE2946801A DE2946801A DE2946801C2 DE 2946801 C2 DE2946801 C2 DE 2946801C2 DE 2946801 A DE2946801 A DE 2946801A DE 2946801 A DE2946801 A DE 2946801A DE 2946801 C2 DE2946801 C2 DE 2946801C2
Authority
DE
Germany
Prior art keywords
resin
film
semiconductor substrate
pii
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2946801A
Other languages
German (de)
English (en)
Other versions
DE2946801A1 (de
Inventor
Seiki Hachioji Tokio/Tokyo Harada
Kiichiro Hachioji Tokio/Tokyo Mukai
Atsushi Musashimurayama Tokio/Tokyo Saiki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE2946801A1 publication Critical patent/DE2946801A1/de
Application granted granted Critical
Publication of DE2946801C2 publication Critical patent/DE2946801C2/de
Expired legal-status Critical Current

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    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/15165—Monolayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Formation Of Insulating Films (AREA)
DE2946801A 1978-11-20 1979-11-20 Halbleiteranordnung mit mindestens einem Speicherelement Expired DE2946801C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14237578A JPS5568659A (en) 1978-11-20 1978-11-20 Semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
DE2946801A1 DE2946801A1 (de) 1980-05-22
DE2946801C2 true DE2946801C2 (de) 1986-06-05

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ID=15313908

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2946801A Expired DE2946801C2 (de) 1978-11-20 1979-11-20 Halbleiteranordnung mit mindestens einem Speicherelement

Country Status (4)

Country Link
US (1) US4926238A (enExample)
JP (1) JPS5568659A (enExample)
DE (1) DE2946801C2 (enExample)
GB (1) GB2036428B (enExample)

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US6747339B1 (en) 1978-11-20 2004-06-08 Hitachi, Ltd. Integrated circuit having reduced soft errors and reduced penetration of alkali impurities into the substrate
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JPS55166943A (en) * 1979-06-15 1980-12-26 Fujitsu Ltd Semiconductor device
JPS577144A (en) * 1980-06-17 1982-01-14 Fujitsu Ltd Semiconductor device
JPS5768059A (en) * 1980-10-15 1982-04-26 Mitsubishi Electric Corp Semiconductor device
JPS57181146A (en) * 1981-04-30 1982-11-08 Hitachi Ltd Resin-sealed semiconductor device
DE3118130A1 (de) * 1981-05-07 1982-12-02 Siemens AG, 1000 Berlin und 8000 München Elektrisch isolierende einkapselungsmasse fuer halbleiteranordnungen
JPS57188853A (en) * 1981-05-18 1982-11-19 Hitachi Ltd Plastic molded type semiconductor device
JPS57190336A (en) * 1981-05-20 1982-11-22 Nec Corp Semiconductor integrated circuit
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DE3125284A1 (de) * 1981-06-26 1983-01-13 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von bauelementen aus halbleiterscheiben
JPS5827346A (ja) * 1981-08-10 1983-02-18 Nippon Telegr & Teleph Corp <Ntt> 半導体集積回路の製造方法
JPS5843545A (ja) * 1981-09-10 1983-03-14 Toray Ind Inc 半導体装置
JPS5848950A (ja) * 1981-09-18 1983-03-23 Nec Corp 半導体装置およびその製造方法
JPS5891663A (ja) * 1981-11-27 1983-05-31 Nec Corp 半導体装置およびその製造方法
DE3377313D1 (en) * 1982-08-23 1988-08-11 Burroughs Corp Alpha-particle protection in integrated circuit packages
JPS5966157A (ja) * 1982-10-08 1984-04-14 Fujitsu Ltd 半導体装置及びその製造方法
JPS5987840A (ja) * 1982-11-10 1984-05-21 Toray Silicone Co Ltd 半導体装置
JPS6012744A (ja) * 1983-07-01 1985-01-23 Hitachi Ltd 半導体装置
US4653175A (en) * 1984-02-09 1987-03-31 Fairchild Semiconductor Corporation Semiconductor structure having alpha particle resistant film and method of making the same
KR920001026B1 (ko) * 1984-02-09 1992-02-01 페어챠일드 카메라 앤드 인스트루먼트 코포레이션 알파입자 보호필름을 갖는 반도체 구조체 및 그 제조방법
EP0170724A1 (de) * 1984-03-15 1986-02-12 Siemens Aktiengesellschaft Optoelektronische Halbleiteranordnung und Verfahren zu ihrer Herstellung
JPS60245150A (ja) * 1984-05-21 1985-12-04 Hitachi Ltd 半導体装置
JPS60188617U (ja) * 1984-05-25 1985-12-13 株式会社ボッシュオートモーティブ　システム アスピレ−タ
JPH02105418A (ja) * 1988-10-14 1990-04-18 Mitsubishi Electric Corp 樹脂封止型半導体装置
US5396104A (en) * 1989-03-28 1995-03-07 Nippon Steel Corporation Resin coated bonding wire, method of manufacturing the same, and semiconductor device
US5891745A (en) * 1994-10-28 1999-04-06 Honeywell Inc. Test and tear-away bond pad design
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EP1289009A3 (de) * 2001-08-25 2004-09-08 Schott Glas Mechanische Strukturierung von Abdeckungsmaterialien zur Verwendung in der elektrischen Aufbau- und Verbindungstechnik
US7102159B2 (en) * 2004-06-12 2006-09-05 Macronix International Co., Ltd. Ultra thin image sensor package structure and method for fabrication
US20060102957A1 (en) * 2004-11-12 2006-05-18 Jhon-Jhy Liaw SER immune cell structure
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3737148A1 (de) * 1987-11-02 1989-05-11 Siemens Ag Verfahren zum aushaerten von polyimidschichten

Also Published As

Publication number Publication date
JPS5643614B2 (enExample) 1981-10-14
US4926238A (en) 1990-05-15
JPS5568659A (en) 1980-05-23
GB2036428B (en) 1983-01-06
GB2036428A (en) 1980-06-25
DE2946801A1 (de) 1980-05-22

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