DE2946801A1 - Halbleiteranordnung und verfahren zu ihrer herstellung - Google Patents

Halbleiteranordnung und verfahren zu ihrer herstellung

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Publication number
DE2946801A1
DE2946801A1 DE19792946801 DE2946801A DE2946801A1 DE 2946801 A1 DE2946801 A1 DE 2946801A1 DE 19792946801 DE19792946801 DE 19792946801 DE 2946801 A DE2946801 A DE 2946801A DE 2946801 A1 DE2946801 A1 DE 2946801A1
Authority
DE
Grant status
Application
Patent type
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19792946801
Other languages
English (en)
Other versions
DE2946801C2 (de )
Inventor
Kiichiro Mukai
Atsushi Saiki
Seiki Harada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

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    • H01L24/50Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
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    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers
    • H01L21/312Organic layers, e.g. photoresist
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    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
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DE19792946801 1978-11-20 1979-11-20 Expired DE2946801C2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14237578A JPS5643614B2 (de) 1978-11-20 1978-11-20

Publications (2)

Publication Number Publication Date
DE2946801A1 true true DE2946801A1 (de) 1980-05-22
DE2946801C2 DE2946801C2 (de) 1986-06-05

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DE19792946801 Expired DE2946801C2 (de) 1978-11-20 1979-11-20

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DE3141000A1 (de) * 1980-10-15 1982-06-03 Mitsubishi Electric Corp Halbleitervorrichtung
EP0064611A2 (de) * 1981-05-07 1982-11-17 Siemens Aktiengesellschaft Elektrisch isolierende Einkapselungsmasse für Halbleiteranordnungen
DE3120279A1 (de) * 1981-04-30 1982-11-18 Hitachi Ltd In harz eingefasstes halbleiter-bauteil
DE3126361A1 (de) * 1981-05-18 1982-11-25 Hitachi Ltd Mit harz vergossene halbleiter-vorrichtungen
EP0068414A2 (de) * 1981-06-26 1983-01-05 Siemens Aktiengesellschaft Verfahren zum Herstellen von Bauelementen aus Halbleiterscheiben
EP0170724A1 (de) * 1984-03-15 1986-02-12 Siemens Aktiengesellschaft Optoelektronische Halbleiteranordnung und Verfahren zu ihrer Herstellung

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US6747339B1 (en) 1978-11-20 2004-06-08 Hitachi, Ltd. Integrated circuit having reduced soft errors and reduced penetration of alkali impurities into the substrate
JPS55128845A (en) * 1979-03-28 1980-10-06 Hitachi Ltd Semiconductor device
JPS5712292B2 (de) * 1979-06-15 1982-03-10
JPS577144A (en) * 1980-06-17 1982-01-14 Fujitsu Ltd Semiconductor device
JPS634713B2 (de) * 1981-05-20 1988-01-30 Nippon Electric Co
US4975762A (en) * 1981-06-11 1990-12-04 General Electric Ceramics, Inc. Alpha-particle-emitting ceramic composite cover
JPS5827346A (en) * 1981-08-10 1983-02-18 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor integrated circuit
JPS5843545A (en) * 1981-09-10 1983-03-14 Toray Ind Inc Semiconductor device
JPS5848950A (en) * 1981-09-18 1983-03-23 Nec Corp Semiconductor device and its manufacture
JPS6214100B2 (de) * 1981-11-27 1987-03-31 Nippon Electric Co
DE3377313D1 (en) * 1982-08-23 1988-08-11 Burroughs Corp Alpha-particle protection in integrated circuit packages
JPH041503B2 (de) * 1982-10-08 1992-01-13 Fujitsu Ltd
JPS6314499B2 (de) * 1982-11-10 1988-03-31 Toray Silicone Co
JPH0131699B2 (de) * 1983-07-01 1989-06-27 Hitachi Ltd
JPS6234202B2 (de) * 1983-08-15 1987-07-25 Nissan Shatai Co
KR920001026B1 (ko) * 1984-02-09 1992-02-01 넬슨 스톤 알파입자 보호필름을 갖는 반도체 구조체 및 그 제조방법
US4653175A (en) * 1984-02-09 1987-03-31 Fairchild Semiconductor Corporation Semiconductor structure having alpha particle resistant film and method of making the same
JPS60188617U (de) * 1984-05-25 1985-12-13
DE3737148A1 (de) * 1987-11-02 1989-05-11 Siemens Ag Verfahren zum aushaerten von polyimidschichten
JPH02105418A (en) * 1988-10-14 1990-04-18 Mitsubishi Electric Corp Resin-sealed type semiconductor device
DE69016315T2 (de) * 1989-03-28 1995-08-17 Nippon Steel Corp Harzbeschichteter verbindungsdraht, verfahren zur herstellung und halbleiteranordnung.
US5891745A (en) * 1994-10-28 1999-04-06 Honeywell Inc. Test and tear-away bond pad design
US6008070A (en) 1998-05-21 1999-12-28 Micron Technology, Inc. Wafer level fabrication and assembly of chip scale packages
US6410414B1 (en) 1998-12-28 2002-06-25 Samsung Electronics Co., Ltd. Method for fabricating a semiconductor device
EP1289009A3 (de) * 2001-08-25 2004-09-08 Schott Glas Mechanische Strukturierung von Abdeckungsmaterialien zur Verwendung in der elektrischen Aufbau- und Verbindungstechnik
US7102159B2 (en) * 2004-06-12 2006-09-05 Macronix International Co., Ltd. Ultra thin image sensor package structure and method for fabrication
US20060102957A1 (en) * 2004-11-12 2006-05-18 Jhon-Jhy Liaw SER immune cell structure
US20080191367A1 (en) * 2007-02-08 2008-08-14 Stats Chippac, Ltd. Semiconductor package wire bonding
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3141000A1 (de) * 1980-10-15 1982-06-03 Mitsubishi Electric Corp Halbleitervorrichtung
DE3120279A1 (de) * 1981-04-30 1982-11-18 Hitachi Ltd In harz eingefasstes halbleiter-bauteil
EP0064611A2 (de) * 1981-05-07 1982-11-17 Siemens Aktiengesellschaft Elektrisch isolierende Einkapselungsmasse für Halbleiteranordnungen
EP0064611A3 (en) * 1981-05-07 1983-11-09 Siemens Aktiengesellschaft Electrically insulating encapsulating substance for semiconductor devices
DE3126361A1 (de) * 1981-05-18 1982-11-25 Hitachi Ltd Mit harz vergossene halbleiter-vorrichtungen
EP0068414A2 (de) * 1981-06-26 1983-01-05 Siemens Aktiengesellschaft Verfahren zum Herstellen von Bauelementen aus Halbleiterscheiben
EP0068414A3 (de) * 1981-06-26 1983-08-03 Siemens Aktiengesellschaft Verfahren zum Herstellen von Bauelementen aus Halbleiterscheiben
EP0170724A1 (de) * 1984-03-15 1986-02-12 Siemens Aktiengesellschaft Optoelektronische Halbleiteranordnung und Verfahren zu ihrer Herstellung

Also Published As

Publication number Publication date Type
GB2036428A (en) 1980-06-25 application
JP1201206C (de) grant
JPS5643614B2 (de) 1981-10-14 grant
DE2946801C2 (de) 1986-06-05 grant
US4926238A (en) 1990-05-15 grant
GB2036428B (en) 1983-01-06 grant
JPS5568659A (en) 1980-05-23 application

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